STMicroelectronics-STN2NF10

STN2NF10  

N-channel 100V – 0.23

Ω

– 2.4A – SO

T

–

223  

S

T

r

ipFET™ II Power MOSFET  

Features  

Type  

V

DSS  

R

DS(on)  

I

D  

STN2NF10  

100V  

< 0.26

Ω

 

2.4A  

2

3

Description  

2

1

This Power MOSFET is the latest development of  

STMicroelectronics unique “single feature size”  

strip-based process. The resulting transistor  

shows extremely high packing density for low on-  

resistance, rugged avalanche characteristics and  

less critical alignment steps therefore a  

SO

T

–

223  

remarkable manufacturing reproducibilit

y

.  

Application  

Internal schematic diagram  

■

Switching application  

– DC-DC

 

converters  

Order code  

Part number  

Marking  

Package  

Packaging  

STN2NF10  

N2NF10  

SO

T

–

223  

T

a

pe & reel  

April 2007  

Rev 6  

1/13  

13  

Contents  

STN2NF10  

Contents  

2/13  

STN2NF10  

Electrical ratings  

1

Electrical ratings  

Table 1.  

Absolute maximum ratings  

Symbol  

Parameter  

Value  

100  

20  

Unit  

V

V

DS  

V

GS  

I

D  

Drain-source voltage (V

GS

=0)  

Gate-source voltage  

V

Drain current (continuous) at T

C

= 25°C  

Drain current (continuous) at T

C

= 100°C  

2.4  

A

I

D  

1.5  

A

(1)  

Drain current (pulsed)  

Derating factor  

17  

A

I

DM  

0.026  

3.3  

W/°C  

W

(2)  

T

o

tal dissipation at T

C

= 25°C  

P

TOT  

(3)  

Single pulse avalanche energy  

200  

30  

mJ  

E

AS  

dv/dt

(4)  

Peak diode recovery voltage slope  

V/ns  

T

j  

Operating junction temperature  

Storage temperature  

-55 to 150  

°C  

T

stg  

1. Pulse

 

width limited by safe operating area  

2. This

 

value is rated according to Rthj-amb, t < 10sec  

3. I

AS

= 2.4A, V

DD

= 30V, Rg=4.7

Ω

, starting Tj = 25°C  

4. I

SD

< 6A, di/dt < 500A/µs, V

DD

= 80% V

(BR)DSS  

Table 2.  

Thermal data  

Symbol  

Parameter  

Value  

38  

Unit  

°C/W  

°C/W  

Rthj-amb

(1)  

Rthj-amb

(2)  

Thermal resistance junction-amb  

Thermal resistance junction-amb  

62.5  

1. When

 

mounted on 1inch² FR-4 board, 2 oz. Cu, (t < 10sec)  

2. When

 

mounted on 1inch² FR-4 board, 2 oz. Cu, (t >10sec)  

3/13  

Electrical characteristics  

STN2NF10  

2

Electrical characteristics  

(T  

=25°C unless otherwise specified)  

CASE  

Table 3.  

On/off states  

Parameter  

Symbol  

Test conditions  

I

D

= 250µA, V

GS

= 0  

V

DS

= Max rating,  

Min. Typ. Max. Unit  

Drain-source breakdown  

voltage  

V

(BR)DSS  

100  

V

1

10  

1

µA  

µA  

µA  

Zero gate voltage drain  

current (V

GS

= 0)  

I

DSS  

V

DS

= Max rating,Tc=125°C  

V

DS

= 30

V

,

T

c=125°C  

Gate body leakage current  

(V

DS

= 0)  

I

GSS  

V

GS

= 20V  

100  

nA  

V

GS(th)  

R

DS(on)  

V

DS

= V

GS

, I

D

= 250µA  

V

GS

= 10

V

,

I

D

= 1.2A  

Gate threshold voltage  

2

4

V

Static drain-source on  

resistance  

0.23 0.26  

Ω

Table 4.  

Dynamic  

Symbol  

Parameter  

Test conditions  

Min. Typ. Max. Unit  

g

fs  

V

DS

=15

V

,

I

D

=1.2A  

Forward transconductance  

2.5  

S

Input capacitance  

C

iss  

C

oss  

C

rss  

280  

45  

pF  

pF  

pF  

Output capacitance  

V

DS

=25

V

,

f

=1MHz, V

GS

=0  

Reverse transfer  

capacitance  

20  

Q

g  

Q

gs  

Q

gd  

V

DD

=80

V

,

I

D

= 6A  

T

o

tal gate charge  

Gate-source charge  

Gate-drain charge  

10  

2.5  

4

14  

nC  

nC  

nC  

V

4/13  

STN2NF10  

Electrical characteristics  

Table 5.  

Switching times  

Symbol  

Parameter  

Test conditions  

Min. Typ. Max. Unit  

V

DD

=50

V

,

I

D

= 2.4A  

V

GS

=10

V

,

R

G

=4.7

Ω  

t

d(on)  

t

r  

T

u

rn-on delay time  

Rise time  

6

ns  

ns  

10  

V

DD

=50

V

,

I

D

= 2.4A  

V

GS

=10

V

,

R

G

=4.7

Ω  

t

d(off)  

t

f  

T

u

rn-off delay time  

Fall time  

20  

3

ns  

ns  

Table 6.  

Source drain diode  

Symbol  

Parameter  

Test conditions  

Min. Typ. Max

 

Unit  

I

SD  

Source-drain current  

2.4  

17  

A

A

(1)  

Source-drain current (pulsed)  

I

SDM  

(2)  

I

Forward on voltage  

1.2  

V

V

SD  

t

rr  

I

SD

= 6A, V

DD

=10V  

Reverse recovery time  

Reverse recovery charge  

Reverse recovery current  

70  

175  

5

ns  

nC  

A

Q

rr  

di/dt=100A/µs,Tj=150°C  

I

RRM  

1. Pulse

 

width limited by safe operating area  

2. Pulsed:

 

pulse duration = 300µs, duty cycle 1.5%  

5/13  

Electrical characteristics  

STN2NF10  

2.1  

Electrical characteristics (curves)  

Figure 1.  

Safe operating area  

Output characteristics  

Transconductance  

Figure 2.  

Figure 4.  

Figure 6.  

Thermal impedance  

Figure 3.  

Figure 5.  

6/13  

Transfer characteristics  

Static drain-source on resistance  

STN2NF10  

Figure 7.  

Electrical characteristics  

Gate charge vs. gate-source  

voltage  

Figure 8.  

Capacitance variations  

Figure 9.  

Normalized gate threshold voltage

 

Figure 10.

 

Normalized on resistance vs.  

vs. temperature  

temperature  

Figure 11.

 

Source-drain diode forward  

characteristics  

Figure 12.

 

Normalized BV  

vs. temperature  

DSS  

7/13  

Electrical characteristics  

STN2NF10  

Figure 13.

 

Max drain current vs. temperature  

8/13  

STN2NF10  

Test circuit  

3

Test circuit  

Figure 14.

 

Switching times test circuit for  

resistive load  

Figure 15.

 

Gate charge test circuit  

Figure 16.

 

Test circuit for inductive load  

switching and diode recovery times  

Figure 17.

 

Unclamped inductive load test  

circuit  

Figure 18.

 

Unclamped inductive waveform  

Figure 19.

 

Switching time waveform  

9/13  

Package mechanical data  

STN2NF10  

4

Package mechanical data  

In order to meet environmental requirements, ST offers these devices in ECO

P

A

CK®  

packages. These packages have a Lead-free second level interconnect. The category of  

second level interconnect is marked on the package and on the inner box label, in  

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  

conditions are also marked on the inner box label. ECO

P

ACK is an ST trademark.  

ECO

P

ACK specifications are available at:

10/13  

STN2NF10  

Package mechanical data  

SOT-223 MECHANICAL DATA  

mm  

inch  

DIM.  

MIN.  

TYP.  

MAX.  

1.80  

0.80  

3.10  

0.32  

6.70  

MIN.  

TYP.  

MAX.  

0.071  

0.031  

0.122  

0.013  

0.264  

A

B

0.60  

2.90  

0.24  

6.30  

0.70  

3.00  

0.26  

6.50  

2.30  

4.60  

3.50  

7.00  

0.024  

0.114  

0.009  

0.248  

0.027  

0.118  

0.010  

0.256  

0.090  

0.181  

0.138  

0.276  

B1  

c

D

e

e1  

E

3.30  

6.70  

3.70  

7.30  

10

o  

0.130  

0.264  

0.146  

0.287  

10

o  

H

V

A1  

0.02  

P008B  

11/13  

Revision history  

STN2NF10  

5

Revision history  

Table 7.  

Date  

Revision history  

Revision  

Changes  

14-Sep-2006  

29-Mar-2007  

04-Apr-2007  

4

5

6

The document has been reformatted  

has been updated  

New test condition for I

DSS

on

12/13  

STN2NF10  

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13/13