STMicroelectronics-STN3N45K3
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STN3N45K3
N-channel 450 V – 3.3
Ω
typ., 0.6 A Zener-protected,
SuperMESH3™ Power MOSFET in a SOT-223 package
Datasheet
–
production data
Features
R
DS(on)
max
Order code
V
DSS
I
D
P
w
4
STN3N45K3
450 V
< 4
Ω
0.6 A
3 W
3
2
•
100% avalanche tested
1
•
Extremely high dv/dt capability
•
Gate charge minimized
SOT-223
•
Very low intrinsic capacitance
•
Improved diode reverse recovery
characteristics
•
Zener-protected
Figure 1. Internal schematic diagram
‘ꢀꢁꢂꢃꢄꢅ
Applications
•
Switching applications
Description
*ꢀꢆꢅ
This SuperMESH3™ Power MOSFET is the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
This device boasts an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering it suitable for
the most demanding applications.
6ꢀꢇꢅ
AM01476v1
Table 1. Device summary
Order code
Marking
3N45K3
Package
Packaging
STN3N45K3
SOT-223
T
a
pe and reel
June 2013
DocID024888 Rev 1
1/15
This is information on a product in full production.
Contents
STN3N45K3
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
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STN3N45K3
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DS
V
GS
I
D
Drain-source voltage (V
GS
= 0)
Gate- source voltage
450
± 30
0.6
2.4
3
V
V
Drain current (continuous) at
T
amb
= 25 °C
Drain current (pulsed)
A
(1)
I
DM
A
P
TOT
T
o
tal dissipation at T
amb
= 25 °C
Avalanche current, repetitive or not-repetitive
W
A
(2)
I
AR
0.6
Single pulse avalanche energy
(3)
E
AS
45
mJ
(starting T
j
= 25°C, I
D
= I
AR
, V
DD
= 50V)
dv/dt
(4)
Peak diode recovery voltage slope
12
1000
V/ns
V
Vesd(g-s) G-S
ESD (HBM C = 100 p
F
, R =
1
.5 k
Ω
)
T
stg
T
j
Storage temperature
-55 to 150
150
°C
°C
Max. operating junction temperature
1. Pulse
width limited by safe operating area.
2. Pulse
width limited by Tj max.
3. Starting
Tj = 25 °C, I
= I
, V
= 50 V.
D
AR
DD
4.
I
≤
0.6 A, di/dt
≤
400 A/µs, V
peak
≤
V
, V
= 80% V
(BR)DSS DD
(BR)DSS.
SD
DS
Table 3. Thermal data
Parameter
Symbol
Value
37.8
Unit
(1)
R
thj-a
Thermal resistance junction-ambient
°C/W
2
1. When
mounted on FR-4 board of 1 inch
, 2oz Cu, t < 30 sec
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15
Electrical characteristics
STN3N45K3
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4. On /off states
Test conditions
Symbol
Parameter
Drain-source
Min.
Typ.
Max. Unit
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
V
DS
= 450 V
450
V
breakdown voltage
Zero gate voltage
1
µA
µA
I
DSS
drain current (V
GS
= 0)
V
DS
= 450
V
,
T
C
=125 °C
50
Gate-body leakage
V
GS
= ± 20 V
I
GSS
± 10
4.5
4
µA
V
current (V
DS
= 0)
V
GS(th)
R
DS(on
Gate threshold voltage
V
DS
= V
GS
, I
D
= 50 µA
3
3.75
3.3
Static drain-source on
V
GS
= 10
V
,
I
D
= 0.6 A
resistance
Ω
Table 5. Dynamic
Symbol
Parameter
Input capacitance
Output capacitance
Test conditions
Min.
Typ.
164
17
Max. Unit
C
iss
–
–
–
–
pF
pF
C
oss
V
DS
= 50
V
, f = 1 MHz, V
GS
= 0
C
rss
Reverse transfer
capacitance
–
–
3
–
–
pF
pF
Equivalent
capacitance time
related
(1)
C
o(tr)
13
V
DS
= 0 to 360 V, V
GS
= 0
Equivalent
capacitance energy
related
(2)
C
o(er)
–
–
18
8
–
–
pF
Intrinsic gate
resistance
R
G
f = 1 MHz open drain
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
9.5
2
–
–
–
nC
nC
nC
V
DD
= 360
V
,
I
D
= 1.8 A,
V
GS
= 10 V
6
1.
2.
C
time related is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
oss
when V
increases from 0 to 80% V
DS
DSS
C
C
energy related is defined as a constant equivalent capacitance giving the same charging time as
oss eq.
oss
when V
increases from 0 to 80% V
DS
DSS
4/15
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STN3N45K3
Electrical characteristics
Min. Typ. Max
Unit
Table 6. Switching times
Test conditions
Symbol
Parameter
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
6.5
5.4
17
–
–
–
–
ns
ns
ns
ns
V
DD
= 225
V
, I
D
= 0.9 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
Turn-off-delay time
Fall time
22
Table 7. Source drain diode
Test conditions
Symbol
Parameter
Min. Typ. Max.
Unit
I
SD
Source-drain current
–
–
–
–
–
–
–
–
–
0.6
2.4
1.5
A
A
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
(2)
V
SD
I
SD
= 0.6 A, V
GS
= 0
V
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
175
550
6
ns
nC
A
I
SD
= 1.8 A, di/dt = 100 A/µs
I
RRM
t
rr
185
600
6.5
ns
nC
A
I
SD
= 1.8 A, di/dt = 100 A/µs
Q
rr
V
DD
= 60 V, T
j
= 150 °C
I
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5%.
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min Typ Max
Unit
30
Gate-source breakdown
voltage
V
(BR)GSO
I
GS
= ± 1 mA, I
D
=0
–
–
V
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
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15
Electrical characteristics
STN3N45K3
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM10304v1
I
D
(A)
1µs
1
10µs
100µs
0.1
1ms
10ms
Tj=150°C
Tc=25°C
0.01
Single pulse
0.001
0.1
10
V
DS
(V)
1
100
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM09207v1
AM09208v1
I
D
(A)
I
D
(A)
3.5
3.0
2.5
2.0
1.5
1.0
V
GS
=10V
V
DS
=15V
2.5
7V
2.0
1.5
1.0
6V
0.5
0
0.5
0
5V
V
5
1
2
3
9
20
25
DS
(V)
5
7
8
V
GS
(V)
0
10
15
0
4
6
Figure 6. Gate charge vs gate-source voltage
Figure 7. Static drain-source on resistance
AM09209v1
AM09210v1
V
(V)
GS
R
DS(on)
(
Ω
)
V
DS
V
DD
=360V
=1.8A
4.2
350
12
V
GS
=10V
I
D
4.0
3.8
3.6
3.4
3.2
3.0
300
250
10
8
200
150
100
50
6
4
2
0
2.8
2.6
0.2 0.4
0
I
D
(A)
0.6 0.8
1.2 1.4 1.6 1.8
1.0
4
8
10
Q
g
(nC)
0
2
6
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STN3N45K3
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Output capacitance stored energy
AM10296v1
AM10297v1
C
E
oss
(pF)
(µJ)
0.8
Ciss
0.7
0.6
100
0.5
0.4
0.3
0.2
10
1
Coss
Crss
0.1
0
0
0.1
100
200
400
1
10
V
DS
(V)
100
300
V
DS
(V)
Figure 10. Normalized gate threshold voltage vs
temperature
Figure 11. Normalized on-resistance vs
temperature
AM10298v1
AM10299v1
V
GS(th)
(norm)
R
DS(on)
(norm)
I
D
=1.2A
1.10
I
D
=50µA
2.5
2.0
1.5
1.0
1.00
0.90
0.80
0.70
0.5
0.0
-75
-75
-25
25
75
T
J
(°C)
-25
25
75
T
J
(°C)
125
125
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized B
VDSS
vs temperature
AM10301v1
AM10300v1
V
(V)
SD
BV
DSS
(norm)
T
J
=-50°C
I
D
=1mA
1.0
1.10
1.05
1.00
0.9
0.8
T
J
=25°C
0.7
0.6
T
J
=150°C
0.95
0.90
0.5
0.4
0
-75
0.8
1.6
I
SD
(A)
-25
25
75
T
J
(°C)
0.4
1.2
125
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15
Electrical characteristics
STN3N45K3
Figure 14. Maximum avalanche energy vs
starting Tj
AM10302v1
AS
(mJ)
50
E
I
D
=0.6 A
V
DD
=50 V
40
30
20
10
0
0
20
40
60 80
100
120
J
(°C)
140 T
8/15
DocID024888 Rev 1
STN3N45K3
Test circuits
3
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
R
L
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
D
R
G
V
GS
2200
μ
F
D.U.T.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.T.
B
3.3
μ
F
V
DD
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.T.
P
w
AM01470v1
AM01471v1
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
t
on
t
off
td
off
V
(BR)DSS
t
r
t
f
td
on
V
D
90%
10%
90%
I
DM
10%
V
GS
V
DS
I
D
0
0
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DocID024888 Rev 1
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Package mechanical data
STN3N45K3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
10/15
DocID024888 Rev 1
STN3N45K3
Package mechanical data
Table 9. SOT-223 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
B
1.80
0.1
0.02
0.60
2.90
0.24
6.30
0.70
3.00
0.26
6.50
2.30
4.60
3.50
7.00
0.85
3.15
0.35
6.70
B1
c
D
e
e1
E
3.30
6.70
3.70
7.30
10°
H
V
Figure 21. SOT-223 mechanical data drawing
0046067_M
DocID024888 Rev 1
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Packaging mechanical data
STN3N45K3
5
Packaging mechanical data
Table 10. SOT-223 tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Typ.
Max.
Min.
Max.
A0
B0
K0
F
6.75
7.30
1.80
5.40
1.65
11.7
1.90
3.90
7.90
0.25
1.50
1.50
6.85
7.40
1.90
5.50
1.75
12
6.95
7.50
2.00
5.60
1.85
12.3
2.10
4.10
8.10
0.35
1.60
1.70
A
180
N
60
W1
W2
W3
12.4
18.4
15.4
E
11.9
W
P2
P0
P1
T
2
Base quantity pcs
Bulk quantity pcs
1000
1000
4
8
0.30
1.55
1.60
D
φ
D1
φ
Figure 22. Tape for SOT-223 (dimensions are in mm)
Cumulative tolerance of 10 sprocket holes is ±0.20 mm
*
12/15
DocID024888 Rev 1
STN3N45K3
Packaging mechanical data
Figure 23. Reel for TO-223 (dimensions are in mm)
DocID024888 Rev 1
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Revision history
STN3N45K3
6
Revision history
Table 11. Document revision history
Changes
Date
Revision
First release. Part number previously included in datasheet
DocID17206
25-Jun-2013
1
14/15
DocID024888 Rev 1
STN3N45K3
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