STMicroelectronics-STN3NF06
| Part # | STMicroelectronics-STN3NF06 |
Download  | STMicroelectronics-STN3NF06 |
STN3NF06
N-channel 60V – 0.07
Ω
-4A – SO
T
–
223
S
T
r
ipFET™ II Power MOSFET
General features
V
DSS
Type
R
DS(on)
I
D
4A
(@Tjmax)
2
STN3NF06
60V
<0.1
Ω
3
2
■
Exceptional dv/dt capability
■
100% avalanche tested
1
SO
T
–
223
■
Avalanche rugged technology
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibilit
y
.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STN3NF06
N3NF06
SO
T
–
223
T
a
pe & reel
February 2007
Rev 6
1/12
12
Contents
STN3NF06
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STN3NF06
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
DS
V
GS
I
D
Drain-source voltage (V
GS
= 0)
Gate-source voltage
60
20
V
V
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
=100°C
Drain current (pulsed)
4
A
I
D
2.9
16
A
(1)
I
DM
A
P
TOT
T
o
tal dissipation at T
C
= 25°C
Derating factor
3.3
0.026
10
W
W/°C
V/ns
mJ
dv/dt
(2)
Peak diode recovery voltage slope
Single pulse avalanche energy
(3)
E
AS
200
T
J
Operating junction temperature
Storage temperature
-55 to 150
°C
T
stg
1. Pulse
width limited by safe operating area
2. I
SD
≤
4
A, di/dt
≤
150
A
/µ
s
,
V
DD
≤
V
(BR)DSS
, T
J
≤
T
JMAX
3. Starting
T
j
= 25
o
C, I
D
= 4A, V
DD
= 30V
Table 2.
Rthj-pcb
Thermal data
Thermal resistance junction-PCB
(1)
max
38
°C/W
°C/W
Rthj-pcb
T
l
(3)
Thermal resistance junction-PCB
(2)
max
100
Maximum lead temperature for soldering
purpose typ
260
°C
1. When
Mounted on FR-4 board with 1 inch
2
pad, 2 oz. of Cu. and t
<
10 sec.
2. When
Mounted on minimum recommended footprint
3. for
10 sec. 1.6 mm from case
3/12
Electrical characteristics
STN3NF06
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
I
D
= 250 µA, V
GS
= 0
V
(BR)DSS
60
V
V
DS
= Max rating,
1
µA
µA
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
V
DS
= Max rating @125°C
10
Gate body leakage current
(V
DS
= 0)
V
GS
= 20V
I
GSS
100
nA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10
V
,
I
D
= 1.5A
V
GS(th)
Gate threshold voltage
2
3
4
V
Static drain-source on
R
DS(on)
0.07
0.10
Ω
resistance
Table 4.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
(1)
V
DS
= 15
V
,
I
D
=1.5A
g
fs
Forward transconductance
3
S
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
315
70
pF
pF
pF
V
DS
=25
V
,
f
=1 MHz, V
GS
=0
Reverse transfer
capacitance
30
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
=48
V
,
I
D
= 3A
V
GS
=10V
10
3.5
3.5
13
nC
nC
nC
1. Pulsed:
pulse duration=300µs, duty cycle 1.5%
Table 5.
Symbol
Switching times
Parameter
Test conditions
Min. Typ. Max.
Unit
V
DD
=30
V
,
I
D
=1.5A,
R
G
=4.7
Ω
,
V
GS
=10V
t
d(on)
t
r
T
u
rn-on delay time
rise time
7
ns
ns
18
V
DD
=30
V
,
I
D
=1.5A,
R
G
=4.7
Ω
,
V
GS
=10V
17
6
t
d(off)
t
f
T
u
rn-off delay time
fall time
ns
ns
4/12
STN3NF06
Electrical characteristics
Min. Typ. Max Unit
Table 6.
Symbol
Source drain diode
Parameter
Test conditions
I
SD
Source-drain current
4
A
A
(1)
I
SDM
Source-drain current (pulsed)
16
(2)
I
SD
=4A, V
GS
=0
Forward on voltage
1.3
V
V
SD
I
SD
=4 A,
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
50
88
ns
nC
A
di/dt = 100A/µs,
V
DD
=25
V
,
T
j=150°C
Q
rr
3.5
I
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration=300µs, duty cycle 1.5%
5/12
Electrical characteristics
STN3NF06
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/12
STN3NF06
Electrical characteristics
Figure 7.
Gate charge vs. gate-source voltage
Figure 8.
Capacitance variations
Figure 9.
Normalized gate threshold voltage
Figure 10.
Normalized on resistance vs.
vs. temperature
temperature
Figure 11.
Source-drain diode forward
characteristics
Figure 12.
Normalized
b
reakdown voltage vs.
temperature
7/12
Test circuit
STN3NF06
3
Test circuit
Figure 13.
Switching times test circuit for
resistive load
Figure 14.
Gate charge test circuit
Figure 15.
Test circuit for inductive load
switching and diode recovery times
Figure 16.
Unclamped Inductive load test
circuit
Figure 17.
Unclamped inductive waveform
Figure 18.
Switching time waveform
8/12
STN3NF06
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
9/12
Package mechanical data
STN3NF06
SOT-223 MECHANICAL DATA
mm
mils
TYP.
90.6
181.1
15.7
25.6
63
DIM.
MIN.
2.27
4.57
0.2
TYP.
2.3
MAX.
2.33
4.63
0.6
MIN.
89.4
179.9
7.9
MAX.
a
b
91.7
182.3
23.6
4.6
c
0.4
d
0.63
1.5
0.65
1.6
0.67
1.7
24.8
59.1
26.4
e1
e4
f
66.9
0.32
3.1
12.6
2.9
0.67
6.7
3
114.2
26.4
118.1
27.6
122.1
28.7
g
0.7
7
0.73
7.3
l1
l2
L
263.8
137.8
248
275.6
137.8
255.9
287.4
145.7
263.8
3.5
3.5
6.5
3.7
6.3
6.7
L
l2
d
a
e4
c
b
f
C
C
B
E
g
P008B
10/12
STN3NF06
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS “AUTOMOTIVE
GRADE” MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2007 STMicroelectronics – All rights reserved
STMicroelectronics group of companies
Australia – Belgium – Brazil – Canada – China – Czech Republic – Finland – France – Germany – Hong Kong – India – Israel – Italy – Japan –
Malaysia – Malta – Morocco – Singapore – Spain – Sweden – Switzerland – United Kingdom – United States of America
12/12
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
