STMicroelectronics-STN3NF06L
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STN3NF06L
N-
channel 60 V, 0.07 Ω typ., 4 A STripFET™ II
Power MOSFET in a SOT-223 package
Datasheet – production data
Features
Order code
V
DS
R
DS(on)
max.
I
D
STN3NF06L
60 V
0.1 Ω
4 A
Exceptional dv/dt capability
100% avalanche tested
Low threshold drive
Applications
Switching applications
Figure 1: Internal schematic diagram
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
is specifically designed to minimize input
capacitance and gate charge. It is therefore ideal
as a primary switch in advanced high-efficiency
isolated DC-DC converters for Telecom and
Computer applications. It is also suitable for any
application with low gate charge drive
requirements.
Table 1: Device summary
Marking Package
3NF06L SOT-223
Order code
Packing
STN3NF06L
Tape and reel
July 2017
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This is information on a product in full production.
Contents
STN3NF06L
Contents
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Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
60
Unit
V
V
DS
V
GS
Drain-source voltage
Gate-source voltage
±16
4
V
Drain current (continuous) at Tc = 25 °C
Drain current (continuous) at T
c
= 100 °C
Drain current (pulsed)
A
I
D
2.9
16
A
A
P
TOT
Total dissipation at T
pcb
= 25 °C
Peak diode recovery voltage slope
Single pulse avalanche energy
Operating junction temperature range
Storage temperature range
3.3
10
W
V/ns
mJ
200
T
j
– 55 to 150
°C
T
stg
Notes:
(1)
Current limited by the package.
(2)
Pulse width limited by safe operating area.
(3)
I
≤ 3 A, di/dt ≤ 150 A/μ
s, V
DD
≤ V
(BR)DSS
SD
(4)
Starting T
j
= 25 °C, I
D
= 4 A, V
DD
= 30 V
Table 3: Thermal data
Parameter
Symbol
Value
38
Unit
R
thj-pcb
R
thj-pcb
°C/W
°C/W
100
Notes:
(1)
When Mounted on FR-4 board 1 inch
2
pad, 2 oz. of Cu and t <10 s.
(2)
When mounted on minimum recommended footprint.
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Electrical characteristics
STN3NF06L
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4: On/off-state
Symbol
Parameter
Test conditions
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, V
DS
= 60 V
Min. Typ. Max.
Unit
Drain-source breakdown
voltage
V
(BR)DSS
60
V
1
µA
µA
Zero gate voltage drain
current
I
DSS
V
GS
= 0 V, V
DS
= 60 V
10
I
GSS
Gate body leakage current
V
DS
= 0 V, V
GS
= ±16 V
±100
2.8
nA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 1.5 A
V
GS
= 5 V, I
D
= 1.5 A
1
0.07
0.10
Ω
Static drain-source
on-resistance
R
DS(on)
0.085 0.12
Ω
Notes:
(1)
Defined by design, not subject to production test.
Table 5: Dynamic
Test conditions
Symbol
C
iss
Parameter
Input capacitance
Output capacitance
Min. Typ. Max. Unit
–
–
340
63
pF
pF
C
oss
V
DS
=25 V, f=1 MHz, V
GS
=0 V
Reverse transfer
capacitance
C
rss
–
30
pF
Q
g
Total gate charge
V
DD
= 48 V, I
D
= 3 A
V
GS
= 0 to 5 V
–
–
7
9
nC
nC
Q
gs
Gate-source charge
1.5
Q
gd
Gate-drain charge
–
2.8
nC
Table 6: Switching times
Test conditions
Symbol
t
d(on)
t
r
Parameter
Turn-on delay time
Rise time
Min. Typ. Max. Unit
V
DD
= 30 V, I
D
= 1.5 A,
R
G
= 4.7 Ω
–
–
–
9
–
–
–
ns
ns
ns
25
20
V
GS
= 5 V
t
d(off)
Turn-off delay time
t
f
Fall time
–
10
–
ns
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Electrical characteristics
Min. Typ. Max. Unit
Table 7: Source-drain diode
Test conditions
Symbol Parameter
t
rr
Forward on voltage
I
SD
= 4 A, V
GS
=0 V
–
–
1.5
V
Reverse recovery time
50
88
ns
I
SD
= 4 A, di/dt = 100 A/μs,
V
DD
=25 V, T
j
=150 °C
Reverse recovery
charge
Q
rr
–
–
nC
A
Reverse recovery
current
I
RRM
3.5
Notes:
(1)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics
STN3NF06L
2.1
Electrical characteristics (curves)
Figure 3: Thermal impedance
Figure 2: Safe operating area
Figure 4: Output characteristics
Figure 5: Transfer characteristics
GC91920a
Figure 6: Static drain-source on-resistance
Figure 7: Gate charge vs. gate-source voltage
GC91940a
GC91950a
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Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs
temperature
Figure 11: Normalized V
(BR)DSS
vs temperature
Figure 10: Normalized on-resistance vs
temperature
GC93240
GC91980a
Figure 12: Source-drain diode forward characteristics
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Test circuits
STN3NF06L
3
Test circuits
Figure 13: Test circuit for resistive load
switching times
Figure 14: Test circuit for gate charge
behavior
Figure 15: Test circuit for inductive load
switching and diode recovery times
Figure 16: Unclamped inductive load test
circuit
Figure 18: Switching time waveform
Figure 17: Unclamped inductive waveform
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Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
4.1
SOT-223 package information
Figure 19: SOT-223 package outline
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Package information
STN3NF06L
Table 8: SOT-223 package mechanical data
mm
Dim.
Min.
Typ.
Max.
1.8
A
A1
B
0.02
0.6
0.1
0.7
3
0.85
3.15
0.35
6.7
B1
c
2.9
0.24
6.3
0.26
6.5
2.3
4.6
3.5
7.0
D
e
e1
E
3.3
6.7
3.7
7.3
10º
H
V
Figure 20: SOT-223 recommended footprint (dimensions are in mm)
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Revision history
5
Revision history
Table 9: Document revision history
Changes
Date
Revision
21-Jun-2004
04-Oct-2006
01-Feb-2007
12-Jun-2008
5
6
7
8
Complete version.
New template, no content change.
Typo mistake on Table 2.
Corrected marking on Table 1
Modified internal schematic diagram on cover page.
Minor text changes.
03-Jul-2017
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STN3NF06L
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All rights reserved
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