STMicroelectronics-STN6N60M2
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STN6N60M2
N-channel 600 V, 1.00 Ω typ., 5.5 A MDmesh M2 Power MOSFET in an
SOT223-2 package
Features
V
R
max.
I
D
Order code
STN6N60M2
3
DS
DS(on)
600 V
1.25 Ω
5.5 A
2
•
•
•
•
Extremely low gate charge
1
Excellent output capacitance (C
oss
) profile
100% avalanche tested
SOT223-2
Zener-protected
D(3)
Applications
•
Switching applications
G(1)
Description
This device is an N-channel Power MOSFET developed using MDmesh M2
technology. Thanks to its strip layout and an improved vertical structure, the device
exhibits low on-resistance and optimized switching characteristics, rendering it
suitable for the most demanding high efficiency converters.
S(2)
NG1D3S2_SOT223
Product status link
Product summary
Order code
Marking
STN6N60M2
6N60M2
SOT223-2
Package
Packing
T
a
pe and reel
DS12926
–
Rev 2
–
May 2020
For further information contact your local STMicroelectronics sales office.
STN6N60M2
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
±25
5.5
Unit
V
V
Gate-source voltage
GS
Drain current (continuous) at T
= 25 °C
I
A
C
D
D
Drain current (continuous) at T
= 100 °C
I
3.5
A
C
I
Drain current (pulsed)
8
6
A
DM
P
T
o
tal power dissipation at T
= 25 °C
W
TOT
S
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
15
50
V/ns
T
Operating junction temperature range
Storage temperature range
J
-55 to 150
°C
T
stg
1. Limited
by maximum junction temperature.
2. Pulse
width limited by safe operating area.
3.
4.
I
≤ 5.5 A, di/dt = 400 A/μs; V
< V
, V
= 400 V
(BR)DSS DD
SD
DS(peak)
V
≤ 480 V
DS
Table 2.
Thermal data
Parameter
Symbol
Value
20
Unit
°C/W
°C/W
R
thj-S
Thermal resistance junction-solder point
Thermal resistance junction-pcb
R
38
thj-pcb
1. When
mounted on 1 inch² FR-4, 2 Oz copper board.
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not repetitive
I
0.8
A
AR
(pulse width limited by T
)
jmax.
Single pulse avalanche energy
(starting T
= 25 °C, I
= I
, V
= 50 V)
E
83
mJ
AS
j
D
AR
DD
DS12926
–
Rev 2
page 2/13
STN6N60M2
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4.
On/off-state
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
V
V
= 0
V
, I
= 1
m
A
600
V
(BR)DSS
GS
D
V
GS
V
GS
V
DS
V
DS
= 0
V
, V
=
6
00 V
1
µA
µA
µA
V
DS
I
Zero gate voltage drain current
DSS
100
±10
4
DS
C
I
= 0
V
, V
=
±
25 V
Gate body leakage current
Gate threshold voltage
GSS
GS
V
= V
, I
= 250 µA
2
3
GS(th)
GS
D
Static drain-source on-
resistance
R
DS(on)
V
= 10
V
, I
= 2 A
GS D
1.00
1.25
Ω
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ.
220
12.5
3.3
23
Max.
Unit
pF
pF
pF
pF
Ω
C
iss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
C
oss
V
V
= 100 V, f = 1 MHz, V
= 0 V
Output capacitance
DS
GS
C
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
rss
= 0 to 480
V
, V
= 0 V
C
oss eq.
DS
GS
R
f = 1 MHz, I
=0 A
D
9
G
Q
6.2
1.3
2.7
nC
nC
nC
g
V
= 480
V
, I
= 4
A
, V
= 0 to 10
V
,
D GS
DD
Q
Gate-source charge
gs
Q
Gate-drain charge
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Min.
Typ.
6.4
Max.
Unit
ns
t
–
–
–
–
–
–
–
–
d(on)
V
V
= 300
V
, I
= 2
A
, R
= 4.7 Ω,
D G
DD
t
Rise time
6.2
ns
r
GS
t
Turn-off delay time
Fall time
18
ns
d(off)
t
15.8
ns
f
DS12926
–
Rev 2
page 3/13
STN6N60M2
Electrical characteristics
Table 7.
Source-drain diode
Test conditions
Symbol
Parameter
Source-drain current
Min.
Typ.
Max.
5.5
8
Unit
A
I
–
–
–
–
–
–
–
–
–
SD
I
Source-drain current (pulsed)
Forward on voltage
A
SDM
V
I
I
= 4 A, V
= 0 V
GS
1.6
V
SD
SD
t
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
229
721
6.3
ns
nC
A
rr
= 4 A, di/dt = 100 A/µs, V
= 60
V
,
SD
DD
Q
rr
I
RRM
t
288
936
6.5
ns
nC
A
rr
I
= 4 A, di/dt = 100 A/µs, V
= 60
V
,
DD
SD
j
Q
rr
I
RRM
1. Limited
by maximum junction temperature.
2. Pulse
width limited by safe operating area.
3. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%.
DS12926
–
Rev 2
page 4/13
STN6N60M2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
GADG150220191054SOA
I
D
(A)
10
0
t
p
=1 µs
t
p
=10 µs
in this area
Operation
S
DS(on)
is limited by R
t
p
=100 µs
t
p
=1 ms
10
-1
T
J
≤
150 °C
T
C
=25 °C
V
GS
=10 V
single pulse
10
-2
10
-1
1
10
0
10
1
10
2
V
DS
(V)
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
GADG150220191052OCH
GADG150220191053TCH
I
D
(A)
I
D
(A)
V
GS
=6 V
V
GS
=7, 8, 9, 10 V
7
7
V
DS
= 17 V
6
5
4
3
2
6
5
4
3
2
V
GS
=5 V
1
0
1
0
V
GS
=4 V
0
2
4
6
8
10 12 14 16 V
DS
(V)
0
1
2
3
4
5
6
7
V
GS
(V)
Figure 5.
Normalized V
BR(DSS)
vs temperature
Figure 6.
Static drain-source on-resistance
GADG140220191313RID
GADG140220191314BDV
R
DS(on)
V
(BR)DSS
(norm.)
(Ω)
I
D
= 1 mA
V
GS
=10 V
1.08
1.10
1.05
1.00
0.95
1.04
1.00
0.96
0.92
0.90
0.85
0
1
2
3
4
I
D
(A)
-75
-25
25
75
125
T
J
(°C)
DS12926
–
Rev 2
page 5/13
STN6N60M2
Electrical characteristics (curves)
Figure 7.
Gate charge vs gate-source voltage
Figure 8.
Capacitance variations
GADG150220191053QVG
GADG150220191052CVR
V
DS
(V)
V
GS
(V)
C
(pF)
V
DD
= 480 V
I
D
= 4 A
600
500
400
300
200
12
10
8
10
3
10
2
V
DS
C
ISS
6
4
f = 1 MHz
10
1
10
0
C
OSS
C
RSS
100
0
2
0
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
Q
g
(nC)
V
DS
(V)
Figure 9.
Normalized gate threshold voltage vs
temperature
Figure 10.
Normalized on-resistance vs temperature
GADG140220191313RON
R
DS(on)
(norm.)
GADG140220191313VTH
V
GS(th)
(norm.)
V
GS
= 10 V
2.5
I
D
= 250 μA
1.1
2.0
1.5
1.0
1.0
0.9
0.8
0.5
0.0
0.7
0.6
-75
-25
25
75
125
T
J
(°C)
-75
-25
25
75
125
T
J
(°C)
Figure 11.
Source-drain diode forward characteristics
Figure 12.
Output capacitance stored energy
GADG140220191314SDF
GADG150220191216EOS
V
SD
E
OSS
(V)
(μJ)
T
j
= -50 °C
1.0
1.6
T
j
= 25 °C
0.9
1.2
0.8
0.8
T
j
= 150 °C
0.7
0.4
0
0.6
0.5
0
1
2
3
4
I
SD
(A)
0
100 200 300 400 500 600
V
DS
(V)
DS12926
–
Rev 2
page 6/13
STN6N60M2
Test circuits
3
Test circuits
Figure 13.
Test circuit for resistive load switching times
Figure 14.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 15.
Test circuit for inductive load switching and
diode recovery times
Figure 16.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
25 Ω
I
D
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 18.
Switching time waveform
Figure 17.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DS12926
–
Rev 2
page 7/13
STN6N60M2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
SOT223-2 package information
Figure 19.
SOT223-2 package outline
DM00320690_2
DS12926
–
Rev 2
page 8/13
STN6N60M2
SOT223-2 package information
Table 8.
SOT223-2 package mechanical data
mm
Dim.
Min.
Typ.
Max.
1.80
0.10
1.70
1.00
0.80
0.76
3.09
3.05
0.35
0.31
6.58
6.53
7.20
3.48
3.53
4.70
1.20
A
A1
A2
A3
b
0.02
1.50
0.80
0.67
0.66
2.96
2.95
0.30
0.29
6.48
6.43
6.80
3.30
3.33
4.50
0.80
1.60
0.90
b1
b2
b3
c
0.71
3.00
c1
D
0.30
6.53
6.48
D1
E
E1
E2
e1
L
3.38
3.43
4.60
1.00
L1
R
1.78 REF
0.10
0.10
0°
R1
θ
8°
θ
1
10°
12°
14°
DS12926
–
Rev 2
page 9/13
STN6N60M2
SOT223-2 package information
Figure 20.
SOT223-2 recommended footprint (dimensions are in mm)
DM00320690_FP
DS12926
–
Rev 2
page 10/13
STN6N60M2
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
SOT223-2 package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
DS12926
–
Rev 2
page 12/13
STN6N60M2
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DS12926
–
Rev 2
page 13/13
