STMicroelectronics-STN93003
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STN93003
High voltage fast-switching
PNP power transistor
Features
■
High voltage capability
4
■
Very high switching speed
3
Application
2
1
■
Electronics ballasts for fluorescent lighting
SO
T
–
223
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and high voltage capabilit
y
.
I
t
uses a cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA. The STN93003 is
expressly designed for a new solution to be used
in compact fluorescent lamps, where it is coupled
with the STN83003, its complementary NPN
transistor.
I
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Part Number
Marking
Package
Packaging
STN93003
N93003
SO
T
–
223
T
a
pe and reel
November 2010
Doc ID 12329 Rev 2
1/11
11
STN93003
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
T
e
st circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
Doc ID 12329 Rev 2
STN93003
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
CES
V
CEO
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
-500
-400
V
V
Emitter-base voltage
V
EBO
V
(BR)EBO
V
(I
C
= 0,
I
B
= 0.75 A,
t
P
< 10 µs)
I
C
I
CM
I
B
Collector current
-1.5
-3
A
A
Collector peak current (t
P
< 5 ms)
Base current
-0.75
-1.5
A
I
BM
P
TOT
T
STG
T
J
Base peak current (t
P
< 5 ms)
T
o
tal dissipation at
T
a
= 25 °C
Storage temperature
A
1.6
W
°C
°C
-65 to 150
150
Max. operating junction temperature
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
(1)
R
thJA
Thermal resistance junction-ambient
_
max
78
°C/W
1. Device
mounted on PCB area of 1 cm².
Doc ID 12329 Rev 2
3/11
Electrical characteristics
STN93003
2
Electrical characteristics
T
= 25 °C unless otherwise specified.
case
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Min. Typ.
Max. Unit
V
CE
= -500 V
-1
-5
mA
mA
Collector cut-off current
(V
BE
= 0)
I
CES
V
CE
= -500 V
T
C
= 125 °C
Emitter-base
V
(BR)EBO
breakdown voltage
(I
C
= 0)
I
E
= -10 mA
I
C
= -10 mA
-5
-10
V
V
Collector-emitter
sustaining voltage
(I
B
= 0)
(1)
V
CE(sus)
-400
I
C
= -0.35 A
I
C
= -0.5 A
I
B
= -50 mA
I
B
= -0.1 A
-0.5
-0.5
V
V
Collector-emitter
saturation voltage
(1)
(1)
V
CE(sat)
Base-emitter saturation
voltage
V
BE(sat)
I
C
= -0.5 A
I
B
= -0.1 A
-1
V
I
C
= -10 mA
I
C
= -0.35 A
I
C
= -1 A
V
CE
= -5 V
10
V
CE
= -5 V
16
h
FE
DC current gain
25
32
V
CE
= -5 V
4
Resistive load
Rise time
t
r
t
s
t
f
I
C
= -0.35 A
V
CC
= 125 V
90
2.2
0.1
ns
µs
µs
Storage time
Fall time
I
B1
= – I
B2
= -70 mA
t
P
≥
25 µs
1.5
2.9
Inductive load
Storage time
Fall time
I
C
= 0.5 A
I
B1
= 0.1 A
L = 10 mH
t
s
t
f
V
BE(off)
= – 5 V
V
Clamp
= 300 V
400
40
ns
ns
L = 4 mH
25 °C< T
C
< 125 °C
C = 1.8 nF
E
sb
Avalanche energy
12
mJ
I
BR
≤
-2.5 A
1. Pulse
test: pulse duration
≤
300 µs, duty cycle
≤
2 %.
4/11
Doc ID 12329 Rev 2
STN93003
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Figure 4.
Figure 6.
Safe operating area
Figure 3.
Derating curve
DC current gain (V
= – 5 V)
Figure 5.
DC current gain (V
= – 1 V)
CE
CE
Collector-emitter saturation
Figure 7.
voltage
Base-emitter saturation
voltage
Doc ID 12329 Rev 2
5/11
Electrical characteristics
Figure 8.
STN93003
Resistive load fall time
Figure 9.
Resistive load storage time
Figure 10.
Inductive load fall time
Figure 11.
Inductive load storage time
Figure 12.
Reverse biased SOA
6/11
Doc ID 12329 Rev 2
STN93003
Electrical characteristics
2.2
Test circuits
Figure 13.
Inductive load switching test circuit
1. Fast
electronic switching
2. Non-inductive
resistor
3. Fast
recovery rectifier
Figure 14.
Resistive load switching test circuit
1. Fast
electronic switching
2. Non-inductive
resistor
Doc ID 12329 Rev 2
7/11
Package mechanical data
STN93003
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
®
ECO
P
A
CK is
an ST trademark.
8/11
Doc ID 12329 Rev 2
STN93003
Package mechanical data
S
OT-22
3
mechanical data
mm.
Typ.
Dim.
Min.
Max.
1.
8
0
0.1
A
A1
B
0.02
0.60
2.
9
0
0.24
6.
3
0
0.70
3
.00
0.26
6.50
2.
3
0
4.60
3
.50
7.00
0.
8
5
3
.15
0.
3
5
6.70
B1
c
D
e
e1
E
3
.
3
0
3
.70
7.
3
0
H
6.70
o
V
10
0046067_M
Doc ID 12329 Rev 2
9/11
STN93003
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Doc ID 12329 Rev 2
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