STMicroelectronics-STO65N60DM6
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STO65N60DM6
Datasheet
N
‑
channel 600
V
,
6
7 mΩ typ., 46 A MDmesh DM6
Power MOSFET in a TO
‑
LL package
Features
V
R
max.
I
D
Order code
STO65N60DM6
DS
DS(on)
600 V
76 mΩ
46 A
•
•
•
•
•
•
•
Fast-recovery body diode
Lower R
DS(on)
per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
TO-LL
type A2
Extremely high dv/dt ruggedness
Zener-protected
Drain (TAB)
Excellent switching performance thanks to the extra driving source pin
Gate(1)
Applications
•
Switching applications
Driver
source (2)
Power
source (3, 4, 5, 6, 7,8)
Description
N-chG1DS2PS345678DTABZ
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-
recovery diode series. Compared with the previous MDmesh fast generation,
DM6 combines very low recovery charge (Q
rr
), recovery time (t
rr
) and excellent
improvement in R
DS(on)
per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Maturity status link
Device summary
Order code
STO65N60DM6
65N60DM6
Marking
Package
Packing
TO-LL type A2
T
a
pe and reel
DS13572
–
Rev 1
–
March 2021
For further information contact your local STMicroelectronics sales office.
STO65N60DM6
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
±25
46
Unit
V
V
Gate-source voltage
GS
Drain current (continuous) at T
= 25 °C
A
C
I
D
Drain current (continuous) at T
= 100 °C
29
A
C
I
Drain current (pulsed)
140
320
100
1000
100
A
DM
P
T
o
tal power dissipation at T
= 25 °C
W
TOT
C
Peak diode recovery voltage slope
Peak diode recovery current slope
MOSFET dv/dt ruggedness
V/ns
A/μs
V/ns
T
Storage temperature range
stg
-55 to 150
°C
T
Operating junction temperature range
j
1. Referred
to TO-247 package.
2. Pulse
width is limited by safe operating area.
3.
4.
I
≤ 46 A, V
< V
, V
= 400 V
(BR)DSS DD
SD
DS(peak)
V
≤ 480 V
DS
Table 2.
Thermal data
Parameter
Symbol
Value
0.39
43
Unit
R
thJC
Thermal resistance, junction-to-case
°C/W
R
thJB
22
1. When
mounted on 1 inch² FR-4 pcb, standard footprint 2 Oz copper board.
2. When
mounted on 40x40mm FR-4 pcb, 6 cm² 2 Oz copper board.
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
6
Unit
I
Avalanche current, repetitive or not repetitive (pulse width limited by T
)
jmax
A
AR
E
Single pulse avalanche energy (starting T
= 25 °C, I
= I
, V
= 50 V)
j D
AR DD
900
mJ
AS
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STO65N60DM6
Electrical characteristics
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4.
On /off-states
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
V
V
= 0
V
, I
= 1
m
A
600
V
(BR)DSS
GS
D
V
V
T
= 0
V
, V
=
6
00 V
1
GS
DS
Zero-gate voltage
drain current
I
= 0
V
, V
=
6
00
V
,
µA
DSS
GS
DS
100
C
I
V
V
= 0
V
, V
=
±
25 V
Gate-body leakage current
Gate threshold voltage
±5
µA
V
GSS
DS
GS
V
= V
, I
= 250 µA
3.25
4
4.75
GS(th)
DS
GS
D
Static drain-source
on-resistance
R
DS(on)
V
GS
= 10
V
, I
=
2
3 A
D
67
76
mΩ
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ. Max. Unit
C
iss
–
–
–
–
–
–
–
–
2500
125
4
–
–
–
–
–
–
–
–
C
oss
V
V
= 100 V, f = 1 MHz, V
= 0 V
Output capacitance
DS
GS
pF
C
rss
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
= 0 to 480
V
, V
= 0 V
C
oss eq
.
204
1.7
DS
GS
R
G
f = 1 MHz, I
= 0 A
D
Ω
Q
g
65.2
16.8
30.2
V
DD
= 480
V
, I
=
4
2 A, V
= 0
to 10 V
D GS
Q
Gate-source charge
nC
gs
Q
Gate-drain charge
gd
1.
C is
defined as a constant equivalent capacitance giving the same charging time as Coss when V
increases from 0
oss eq
DS
to 80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Min.
Typ. Max. Unit
t
Turn-on delay time
Rise time
–
–
–
–
20
10
55
8
–
–
–
–
ns
ns
ns
ns
V
= 300
V
, I
=
1
9 A,
d(on)
DD
D
R
= 4.7 Ω, V
= 10 V
t
r
G
GS
t
Turn-off delay time
Fall time
d(off)
t
f
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Rev 1
page 3/15
STO65N60DM6
Electrical characteristics
Table 7.
Source-drain diode
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
46
Unit
A
I
Source-drain current
Source-drain current (pulsed)
Forward on voltage
–
–
–
–
–
SD
I
140
1.6
A
SDM
V
V
I
= 0
V
, I
=
4
6 A
SD
V
GS
SD
t
= 38 A, di/dt = 100 A/μs,
Reverse recovery time
Reverse recovery charge
116
ns
µC
rr
SD
V
DD
= 60 V
Q
rr
0.58
I
Reverse recovery current
–
10
A
RRM
t
I
= 38 A, di/dt = 100 A/μs,
= 60 V, T
= 150 °C
Reverse recovery time
–
–
208
ns
rr
SD
V
Q
DD
J
Reverse recovery charge
1.98
µC
rr
I
Reverse recovery current
–
19
A
RRM
1. Pulse
width is limited by safe operating area.
2. Pulse
test: pulse duration = 300 µs, duty cycle 1.5%.
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STO65N60DM6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Maximum transient thermal impedance
Z
thJC
GADG040120211127SOA
GADG150320211430ZTH
I
D
(°C/W)
(A)
0.5
duty=0.2
0.3
0.4
10
2
10
1
10
0
t
p
= 1µs
10
-1
0.1
t
p
= 10µs
0.05
t
p
= 100µs
t
p
= 1ms
10
-2
R
thJC
= 0.39 °C/W
duty = t
on
/ T
10
-1
10
-2
Single pulse
T
j
=150 °C
T
c
= 25 °C
single pulse
t
on
T
t
p
= 10ms
V
DS
(V)
10
-3
10
-1
10
0
10
1
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
Figure 3.
Typical output characterisics
Figure 4.
Typical transfer characteristics
GIPD031020181119OCH
GIPD031020181119TCH
I
D
I
D
(A)
(A)
V
GS
=10V
120
120
V
GS
=9V
V
DS
= 20V
100
100
V
GS
=8V
80
80
60
40
60
V
GS
=7V
40
20
20
0
V
GS
=6V
16
0
0
4
8
12
V
DS
(V)
4
5
6
7
8
9
V
GS
(V)
Figure 5.
Typical gate charge characteristics
Figure 6.
Typical drain-source on-resistance
V
DS
(V)
V
GS
(V)
GADG220320211445QVG
GADG220320211447RON
V
DD
= 480 V, I
D
= 42 A
R
DS(on)
(mΩ)
600
500
400
300
200
12
10
8
Q
g
73
71
V
DS
V
GS
= 10 V
V
GS
Q
gd
Q
gs
69
67
65
6
4
63
61
100
0
2
0
0
6
12 18 24 30 36 42 I
D
(A)
0
10 20 30 40 50 60 70 Q
g
(nC)
DS13572
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STO65N60DM6
Electrical characteristics (curves)
Figure 8.
Normalized gate threshold voltage vs
temperature
Figure 7.
Typical capacitance characteristics
GIPD031020181120CVR
C
(pF)
GIPD031020181121VTH
V
GS(th)
(norm.)
10
4
1.1
C
ISS
1.0
0.9
10
3
10
2
C
OSS
I
D
= 250 µA
0.8
f = 1 Mhz
10
1
0.7
0.6
C
RSS
V
DS
(V)
10
0
10
-1
10
0
10
1
10
2
-75
-25
25
75
125
T
j
(°C)
Figure 10.
Typical output capacitance stored energy
Figure 9.
Normalized on-resistance vs temperature
GIPD041020181405SDF
GIPD031020181122RON
E (µJ)
R
DS(on)
(norm.)
24
20
16
12
8
2.5
2.0
1.5
1.0
V
GS
= 10 V
0.5
0.0
4
0
0
100 200 300 400 500 600
V
DS
(V)
-75
-25
25
75
125
T
j
(°C)
Figure 11.
Normalized breakdown voltage vs temperature
Figure 12.
Typical reverse diode forward characteristics
GIPD031020181123BDV
GADG220320211451SDF
V
(BR)DSS
V
SD
(norm.)
(V)
1.1
1.10
T
J
= -50°C
1.0
1.05
1.00
0.9
T
J
= 25°C
0.8
I
D
= 1 mA
0.95
T
J
= 150°C
0.7
0.90
0.85
0.6
0.5
-75
-25
25
75
125
T
j
(°C)
0
6
12 18 24 30 36 42 I
SD
(A)
DS13572
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page 6/15
STO65N60DM6
Test circuits
3
Test circuits
Figure 14.
Test circuit for gate charge behavior
Figure 13.
Switching times test circuit for resistive load
V
DD
R
L
2200
3.3
µF
R
L
µF
V
DD
+
D.U.
T
.
I
G
= CONST
2.7 kΩ
100 Ω
V
D
R
G
V
GS
V
GS
pulse width
+
D.U.
T
.
V
G
2200
μF
P
W
47 kΩ
GND1
(driver signal)
GND2
(power)
1 kΩ
GND1
GND2
AM15855v1
GADG180720181011SA
Figure 15.
Test circuit for inductive load switching and
diode recovery times
Figure 16.
Unclamped inductive load test circuit
A
A
A
L
D
S
FAST
DIODE
L=100µH
G
D.U.
T
.
B
V
D
2200
µF
3.3
µF
3.3
µF
1000
µF
B
V
DD
B
+
V
DD
+
D
S
25Ω
I
D
G
R
G
D.U.
T
.
V
i
D.U.
T
.
P
w
GND2
GND1
GND1
GND2
AM15858v1
AM15857v1
Figure 18.
Switching time waveform
Figure 17.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
I
D
0
0
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DS13572
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page 7/15
STO65N60DM6
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
TO-LL type A2 package information
Figure 19.
TO-LL type A2 package outline
DM00276569_5_type_A2
DS13572
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Rev 1
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STO65N60DM6
TO-LL type A2 package information
Table 8.
TO-LL type A2 package mechanical data
mm
Typ.
2.30
0.48
0.80
0.46
0.15
10.38
2.45
1.16
9.90
3.50
9.40
8.40
9.70
7.40
2.20
1.20
11.68
5.58
6.15
5.14
0.90
0.72
7.23
1.44
0.70
1.90
Dim.
Min.
2.20
0.40
0.70
Max.
2.40
0.60
0.90
A
A1
b
c
c1
C
10.28
2.35
10.48
2.55
C2
C3
D
9.80
3.30
9.30
8.20
9.50
10.00
3.70
9.50
8.60
9.90
D2
D3
D4
D5
D6
D7
e
E
11.48
11.88
E1
E2
E3
E4
E5
E6
E7
E8
K
7.03
7.43
0.50
1.70
2.40
0.90
2.10
K1
L
0.70
0.44
0.60
11°
L1
L2
θ
0.40
0.80
DS13572
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STO65N60DM6
TO-LL type A2 package information
Figure 20.
TO-LL type A2 recommended footprint (dimensions are in mm)
DM00276569_5_type_A2
DS13572
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STO65N60DM6
TO-LL packing information
4.2
TO-LL packing information
Figure 21.
Carrier tape outline and dimensions
Figure 22.
Reel outline and dimensions
DS13572
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Rev 1
page 11/15
STO65N60DM6
TO-LL packing information
Figure 23.
TO-LL orientation in tape pocket
DS13572
–
Rev 1
page 12/15
STO65N60DM6
Revision history
Table 9.
Document revision history
Date
30-Mar-2021
Revision
Changes
1
First release.
DS13572
–
Rev 1
page 13/15
STO65N60DM6
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
TO-LL type A2 package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
TO-LL packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
DS13572
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STO65N60DM6
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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.
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. All other product or service
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© 2021 STMicroelectronics – All rights reserved
DS13572
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