STMicroelectronics-STP10NK80Z
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STP10NK80Z, STP10NK80ZF
P
,
STW10NK80Z
N-channel 800
V
,
0
.78
Ω
, 9 A Zener-protected SuperMESH™
Power MOSFETs in TO-220, TO-220FP and TO-247 packages
Datasheet — production data
Features
TAB
Type
V
DSS
R
DS(on)
I
D
Pw
STP10NK80Z
STP10NK80ZFP
STW10NK80Z
800V
800V
800V
<0.90
Ω
9A
<0.90
Ω
9A
<0.90
Ω
9A
160 W
40 W
3
2
3
1
2
1
TO-220
TO-220FP
160 W
■
Extremely high dv/dt capability
■
100% avalanche tested
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Very good manufacturing repeability
TO-247
Applications
Figure 1.
Internal schematic diagram
■
Switching application
D(2,TAB)
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics’ SuperMESH™ technolog
y
,
achieved through optimization of ST’s well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Part number
STP10NK80Z
Marking
Package
Packaging
P10NK80Z
P10NK80ZFP
W10NK80Z
TO-220
TO-220FP
TO-247
T
u
be
T
u
be
T
u
be
STP10NK80ZFP
STW10NK80Z
March 2012
Doc ID 8911 Rev 7
1/17
This is information on a product in full production.
17
Contents
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
Doc ID 8911 Rev 7
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
TO-220/ TO-247
TO-220FP
V
DSS
V
DGR
V
GS
I
D
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20k
Ω
)
Gate-source voltage
800
800
3
0
V
V
V
A
9
(1)
Drain current (continuous) at T
C
= 25°C
9
6
(1)
I
D
Drain current (continuous) at T
C
=100°C
6
A
(2)
3
6
(1)
40
I
DM
Drain current (pulsed)
T
o
tal dissipation at T
C
= 25°C
Derating factor
3
6
A
W
P
TOT
160
1.28
0.
3
2
W/°C
kV
Vesd(G-S) G-S
ESD (HBM C=100p
F
,
R
=1.5k
Ω
)
4
dv/dt
(
3
)
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
4.5
V/ns
V
V
ISO
—
2500
T
J
Operating junction temperature
Storage temperature
-55 to 150
°C
T
stg
1. Limited
by maximum junction temperature.
2. Pulse
width limited by safe operating area.
3
.
I
≤
9 A, di/dt
≤
200 A/µs,V
≤
V
, T
≤
T
(BR)DSS j
JMAX
SD
DD
T
a
ble 3.
Symbol
Thermal data
Value
Parameter
Unit
TO-220 TO-220FP
TO-247
R
thj-case
R
thj-a
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
0.78
3
.1
0.78
50
°C/W
°C/W
62.5
T
a
ble 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
I
AS
9
A
Single pulse avalanche energy
E
AS
290
mJ
(starting Tj=25°C, Id=Iar, Vdd=50V)
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/17
Electrical characteristics
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
I
D
= 1mA, V
GS
= 0
800
V
V
DS
= 800V
Zero gate voltage drain
current (V
GS
= 0)
1
µA
µA
I
DSS
V
DS
= 800
V
,
T
C
= 125°C
50
Gate body leakage current
(V
DS
= 0)
I
GSS
V
GS
= 20V
10
µA
V
GS(th)
R
DS(on)
V
DS
= V
GS
, I
D
= 100µA
V
GS
= 10
V
,
I
D
= 4.5A
Gate threshold voltage
3
3
.75
4.5
0.9
V
Static drain-source on
resistance
0.78
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
V
DS
=15
V
,
I
D
= 4.5A
Forward transconductance
–
9.6
–
S
g
fs
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
2180
205
3
8
pF
pF
pF
V
DS
=25
V
,
f
=1 MHz, V
GS
=0
–
–
Reverse transfer
capacitance
(2)
Equivalent output
capacitance
C
oss eq
.
V
GS
=0, V
DS
=0V to 640V
DD
=640
V
,
I
D
= 9A
–
–
105
–
–
pF
Q
g
Q
gs
Q
gd
V
T
o
tal gate charge
Gate-source charge
Gate-drain charge
72
12.5
3
7
nC
nC
nC
V
GS
=10V
1. Pulsed:
pulse duration=
3
00µs, duty cycle 1.5%
2. is
defined as a constant equivalent capacitance giving the same charging time as C
C
when V
DS
oss eq.
oss
inceases from 0 to 80% V
DSS
4/17
Doc ID 8911 Rev 7
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
Electrical characteristics
Min. Typ. Max.
Unit
Table 7.
Symbol
Switching times
Parameter
Test conditions
V
DD
=400
V
,
I
D
=4.5A,
t
d(on)
t
r
T
u
rn-on delay time
Rise time
3
0
ns
ns
R
G
=4.7
Ω
,
V
GS
=10V
20
V
DD
=400
V
,
I
D
=4.5A,
t
d(off)
t
f
T
u
rn-off delay Time
Fall time
65
17
ns
ns
R
G
=4.7
Ω
,
V
GS
=10V
Table 8.
Symbol
Gate-source zener diode
Parameter
Test conditions
Min. Typ. Max.
Unit
(1)
Igs= 1mA
BV
GSO
Gate-source breakdown voltage
3
0
V
(open drain)
1. The
built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capabilit
y
, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrit
y
.
T
hese integrated Zener diodes thus avoid the
usage of external components.
T
a
ble 9.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max Unit
I
SD
Source-drain current
–
–
–
9
A
A
V
(1)
Source-drain current (pulsed)
Forward on voltage
3
6
1.6
I
SDM
(2)
I
SD
=9A, V
GS
=0
V
SD
t
rr
I
SD
=9A,
Reverse recovery time
Reverse recovery charge
Reverse recovery current
645
6.4
20
ns
µC
A
Q
rr
di/dt = 100A/µs,
–
V
DD
=45
V
,
T
j=150°C
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration=
3
00µs, duty cycle 1.5%
Doc ID 8911 Rev 7
5/17
Electrical characteristics
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220
Figure 3.
Thermal impedance for TO-220
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
6/17
Doc ID 8911 Rev 7
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
Electrical characteristics
Figure 8.
Output characterisics
Figure 9.
Transfer characteristics
Figure 10.
Transconductance
Figure 11.
Static drain-source on resistance
Figure 12.
Gate charge vs gate-source voltage
Figure 13.
Capacitance variations
Doc ID 8911 Rev 7
7/17
Electrical characteristics
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
Figure 14.
Normalized gate threshold voltage
Figure 15.
Normalized on resistance vs
vs temperature
temperature
Figure 16.
Source-drain diode forward
characteristics
Figure 17.
Normalized BV
DSS
vs temperature
Figure 18.
Maximum avalanche energy vs
temperature
8/17
Doc ID 8911 Rev 7
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
Test circuit
3
Test circuit
Figure 19.
Switching times test circuit for
resistive load
Figure 20.
Gate charge test circuit
Figure 21.
Test circuit for inductive load
switching and diode recovery times
Figure 22.
Unclamped Inductive load test
circuit
Figure 23.
Unclamped inductive waveform
Figure 24.
Switching time waveform
Doc ID 8911 Rev 7
9/17
Package mechanical data
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
is an ST trademark.
T
a
ble 10.
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.
3
2
6.60
2.72
14
e
2.40
4.95
1.2
3
6.20
2.40
1
3
e1
F
H1
J1
L
L1
L20
L
3
0
∅
P
Q
3
.50
3
.9
3
16.40
28.90
3
.75
3
.85
2.65
2.95
10/17
Doc ID 8911 Rev 7
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
Figure 25.
TO-220 type A drawing
Package mechanical data
00159
88
_typeA_Rev_
S
Doc ID 8911 Rev 7
11/17
Package mechanical data
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
T
a
ble 11.
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L
3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
3
0.6
10.6
3
.6
16.4
9.
3
3
3
.2
12/17
Doc ID 8911 Rev 7
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
Figure 26.
TO-220FP drawing
Package mechanical data
7012510_Rev_K_B
Doc ID 8911 Rev 7
1
3
/17
Package mechanical data
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
Table 12.
TO-247 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3
.40
0.80
20.15
15.75
5.60
14.80
4.
3
0
b1
b2
c
2.0
3
.0
0.40
19.85
15.45
5.
3
0
14.20
3
.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅
P
∅
R
S
3
.55
4.50
5.
3
0
3
.65
5.50
5.70
14/17
Doc ID 8911 Rev 7
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
Figure 27.
TO-247 drawing
Package mechanical data
0075325_G
Doc ID 8911 Rev 7
15/17
Revision history
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
5
Revision history
T
a
ble 13.
Document revision history
Date
Revision
Changes
08-Sep-2005
10-Mar-2006
28-Sep-2005
4
5
6
Complete document
Inserted ecopack indication
New template, no content change
Content reworked to improve readabilit
y
.
Minor text changes in cover page.
15-Mar-2012
7
16/17
Doc ID 8911 Rev 7
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
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