STMicroelectronics-STP10P6F6
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STD10P6F6, STF10P6F6,
STP10P6F6, STU10P6F6
P-channel -60
V
,
0
.13
Ω
typ., -10 A STripFET™ F6
Power MOSFE
T
s
i
n DPAK, TO-220F
P
,
T
O-220 and IPAK packages
Datasheet
−
production data
Features
TAB
Order codes
V
DS
R
DS(on)
max
I
D
3
STD10P6F6
STF10P6F6
STP10P6F6
STU10P6F6
1
3
2
DPAK
-60 V
0.16
Ω
-10 A
1
TO-220FP
TAB
TAB
•
Very low on-resistance
•
Very low gate charge
3
2
1
3
2
•
High avalanche ruggedness
•
Low gate drive power loss
1
IPAK
TO-220
Figure 1. Internal schematic diagram
Applications
, TAB
•
Switching applications
Description
These devices are P-channel Power MOSFE
T
s
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFE
T
s
e
xhibit very low R
DS(on)
in all
packages.
AM11258v1
Table 1. Device summary
Order codes
Marking
Package
Packing
STD10P6F6
STF10P6F6
STP10P6F6
STU10P6F6
DPAK
TO-220FP
TO-220
IPAK
T
a
pe and reel
10P6F6
Tube
July 2015
DocID022967 Rev 5
1/24
This is information on a product in full production.
Contents
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
2/24
DocID022967 Rev 5
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
DPAK
IPAK
TO-220FP TO-220
V
DS
V
GS
Drain-source voltage
-60
± 20
-10
V
V
Gate-source voltage
(1)
I
D
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
A
I
D
-7.2
-40
A
(2)
I
DM
A
P
TOT
E
AS
T
o
tal dissipation at T
C
= 25 °C
35
20
80
30
W
Single pulse avalanche energy
(starting T
J
=25 °C, I
D
=-3 A, V
DD
=40 V)
mJ
V
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; T
C
=25 °C)
V
ISO
2500
V
DG
T
stg
T
j
Drain-gate voltage (V
GS
= 0)
Storage temperature
-20
-55 to 175
175
V
°C
°C
Max. operating junction temperature
1. Limited
by package
2. Pulse
width limited by safe operating area
Table 3. Thermal data
Parameter
Value
Symbol
Unit
DPAK IPAK
TO-220FP TO-220
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-ambient max
R
thj-pcb
Thermal resistance junction-pcb max
(1)
4.29
7.5
5
°C/W
°C/W
°C/W
100
62.5
62.5
50
2
1. When
mounted on 1 inch
FR-4, 2 Oz copper board
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24
Electrical characteristics
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified).
Table 4. Static
Test conditions
Symbol
Parameter
Min.
Typ.
Max. Unit
Drain-source breakdown
Voltage
V
(BR)DSS
I
D
= -250 µA, V
GS
= 0 V
V
DS
= -60 V
-60
V
-1
µA
µA
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
V
DS
= -60 V, Tc = 125 °C
-10
Gate body leakage current
(V
DS
= 0)
I
GSS
V
GS
= ±20 V
±
100
-4
nA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= -250 µA
V
GS
= -10
V
,
I
D
= -5 A
-2
Static drain-source on-
resistance
R
DS(on)
0.13
0.16
Ω
Table 5. Dynamic
Test conditions
Symbol
Parameter
Min.
Typ.
Max. Unit
C
iss
Input capacitance
–
–
340
40
–
–
pF
pF
V
DS
= -48 V, f=1 MHz,
C
oss
Output capacitance
V
GS
= 0 V
Reverse transfer
capacitance
C
rss
–
20
–
pF
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
6.4
1.7
1.7
–
–
–
nC
nC
nC
V
DD
= -30 V, I
D
= -10 A
V
GS
= -10 V
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min. Typ.
Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
64
5.3
14
–
–
–
–
ns
ns
ns
ns
V
DD
= -48 V, I
D
= -5 A,
R
G
= 4.7
Ω,
V
GS
= -10 V
Turn-off delay time
Fall time
3.7
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STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Electrical characteristics
Min. Typ. Max.
Unit
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I
SD
Source-drain current
–
–
–
–
–
-10
-40
A
A
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
(2)
V
SD
I
SD
= -5 A, V
GS
= 0 V
-1.1
V
t
rr
Reverse recovery time
Reverse recovery charge
I
SD
= -10 A,
20
ns
nC
di/dt = -100 A/µs,
Q
rr
17.8
V
DD
= -48 V
I
RRM
Reverse recovery current
–
-1.8
A
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
2.1
Electrical characteristics (curves)
Note:
For the P-channel Power MOSFE
T
,
c
urrent and voltage polarities are reversed.
Figure 2. Safe operating area for DPAK, TO-220
and IPAK
Figure 3. Thermal impedance DPAK, TO-220
and IPAK
GIPG180420141107SA
AM15408v1
K
I
D
δ
=0.5
(A)
0.2
0.1
10
100
µ
s
1ms
0.05
10
-1
1
10ms
0.02
pcb
0.01
Tj= 175°C
0.1
T
c
=25°C
Single pulse
Single
pulse
10
-2
10
-5
0.01
10
-1
10
-4
10
-3
10
-2
t
p
(s)
10
V
DS
(V)
0.1
1
Figure 4. Safe operating area for TO-220FP
Figure 5. Thermal impedance for TO-220FP
AM15493v1
AM15492v1
K
10
-1
10
-2
I
D
(A)
δ
=0.5
10
100µs
0.05
1ms
0.02
1
10ms
Tj= 175°C
Tc=25°C
Single pulse
0.01
Single
pulse
0.1
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
10
V
DS
(V)
0.1
1
Figure 6. Output characteristics
Figure 7. Transfer characteristics
AM15346v1
AM15340v1
I
D
I
D
(A)
(A)
V
= 10 V
GS
V
= 9 V
DS
25
25
20
15
V
= 6 V
GS
V
20
15
10
5
= 5 V
GS
10
5
V
= 4 V
GS
0
0
0
5
6
10
4
7
8
10
V
GS
(V)
V
DS
(V)
2
5
9
3
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STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
Figure 9. Static drain-source on-resistance
AM15350v1
AM15341v2
V
GS
R
DS(on)
(m
Ω
)
(V)
V
GS
=10V
V
DD
=30V
=10A
10
I
D
180
160
140
8
6
4
120
100
2
0
8
I
D
(A)
Q
g
(nC)
1
2
3
4
6
0
5
7
9
2
4
6
Figure 10. Capacitance variations
Figure 11. Normalized V
(BR)DSS
vs temperature
AM15349v1
AM15342v1
V
(BR)DSS
C
(pF)
(norm)
400
1.15
I
D
= 1mA
350
300
250
200
150
100
Ciss
1.10
1.05
1
0.95
0.90
50
0
Coss
Crss
50 V
DS
(V)
-55
0
-30 -5
20 45 70
95 120
T
J
(°C)
20
30
10
40
Figure 12. Normalized gate threshold voltage vs
Figure 13. Normalized on-resistance vs
temperature
temperature
AM15350v1
AM15344v1
V
GS(th)
R
DS(on)
(norm)
(norm)
2
1.8
1.6
1.4
1.2
1
1.10
V
GS
=10V
I
D
=250 µA
1
0.90
0.80
0.8
0.6
0.4
0.70
0.60
-55
-55
-5 20
70
95
120
T
J
(°C)
-30
-5
20 45 70
T
J
(°C)
-30
45
95
120
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Electrical characteristics
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Figure 14. Source-drain diode forward
characteristics
AM15345v1
V
SD
(V)
T
J
=-55°C
1.05
0.95
0.85
T
J
=25°C
0.75
0.65
T
J
=175°C
0.55
2
4
6
8
I
SD
(A)
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DocID022967 Rev 5
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Test circuits
3
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
AM11255v1
AM11256v1
Figure 17. Test circuit for diode recovery
behaviour
AM11257v1
DocID022967 Rev 5
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24
Package information
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
4.1
DPAK package information
Figure 18. DPAK (TO-252) type C package outline
ꢀꢀꢁꢂꢃꢃꢄBꢅꢆBWSHB&
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STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Package information
Table 8. DPAK (TO-252) type C package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.00
0.72
5.13
0.47
0.47
6.00
5.25
6.50
2.186
4.70
9.80
1.40
2.30
1.01
2.38
1.10
0.10
0.85
5.46
0.60
0.60
6.20
b4
c
5.33
6.10
c2
D
D1
E
6.60
6.70
e
2.286
2.386
E1
H
10.10
1.50
10.40
1.70
L
L1
L2
L3
L4
L6
Θ
1
Θ
2
V2
2.90 REF
0.90
0.60
1.25
1.00
0.51 BSC
0.80
1.80 BSC
7°
5°
5°
0°
9°
9°
8°
7°
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24
Package information
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Figure 19. DPAK (TO-252) footprint
(a)
)3ꢀꢀꢁꢂꢃꢃꢄB4
a. All
dimensions are in millimeters
12/24
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STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Package information
4.2
DPAK packing information
Figure 20. Tape for DPAK (TO-252)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
Top cover
tape
P2
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
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24
Package information
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Figure 21. Reel for DPAK (TO-252)
T
REEL DIMENSIONS
40mm min.
Access hole
At sl
ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Table 9. DPAK (TO-252) tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
B1
D
6.8
7
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
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STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Package information
4.3
TO-220FP package information
Figure 22. TO-220FP package outline
7012510_Rev_K_B
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Package information
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Table 10. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
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STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Package information
4.4
TO-220 package information
Figure 23. TO-220 type A package outline
ꢀꢀꢅꢉꢆꢂꢂBWSH$B5HYB7
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Package information
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Table 11. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
3.50
3.93
16.40
28.90
∅
Q
P
3.75
2.65
3.85
2.95
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STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Package information
4.5
IPAK package information
Figure 24. IPAK (TO-251) type A package outline
0068771_L
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Package information
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Table 12. IPAK (TO-251) type A mechanical data
mm.
typ.
DIM
min.
max.
A
A1
b
2.20
0.90
0.64
2.40
1.10
0.90
0.95
5.40
b2
b4
B5
c
5.20
0.30
0.45
0.48
6.00
6.40
0.60
0.60
6.20
6.60
c2
D
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
1.20
1.00
L1
L2
V1
0.80
10°
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STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Package information
Figure 25. IPAK (TO-251) type C package outline
ꢀꢀꢁꢂꢃꢃꢅꢇ7SHꢇ&ꢇ5HYꢇ/
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Package information
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Table 13. IPAK (TO-251) type C mechanical data
mm
typ.
Dim.
min.
max.
A
A1
b
2.20
0.90
0.66
2.30
1.00
2.35
1.10
0.79
0.90
5.43
0.59
0.59
6.20
5.55
6.70
4.95
2.30
4.60
16.78
9.60
1.20
1.25
7°
b2
b4
c
5.23
0.46
0.46
6.00
5.20
6.50
4.60
2.20
4.40
16.18
9.00
0.80
0.90
3°
5.33
c2
D
6.10
5.37
6.60
4.78
2.25
4.50
16.48
9.30
1.00
1.08
5°
D1
E
E1
e
e1
H
L
L1
L2
θ
1
θ
2
1°
3°
5°
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STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Revision history
5
Revision history
Table 14. Document revision history
Changes
Date
Revision
10-May-2012
1
First release.
Updated title on the cover page.
20-Jun-2012
17-May-2013
2
3
Updated all parameter values in
T
a
ble 5
,
T
a
ble 6
and
Figure 1
.
– Added: TO-220FP and IPAK packages
– Updated: R
DS(on)
value in cover page, R
thj-case
values,
T
a
ble 5
,
6
and
7
typical values
– Updated mechanical data only for DPAK in
Section 4: Package
information
– Updated:
Figure 2
and
3
– Updated:
Section 4.1: DPAK package information
and
Section 4.4:
TO-220 package information
24-Apr-2014
27-Jul-2015
4
5
– Minor text changes
– All voltage and current polarities inverted
–
T
e
xt and formatting changes throughout document
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STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
IMPORTANT NOTICE – PLEASE READ CAREFUL
L
Y
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.
A
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