STMicroelectronics-STP110N10F7
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STF110N10F7,
STP110N10F7
N-channel 100
V
,
5
.1 m
Ω
typ., 110 A, STripFET™ VII DeepGATE™
Power MOSFE
T
s
i
n TO-220FP and TO-220 packages
Datasheet production
data
–
Features
Order codes
V
DS
R
DS(on)
max
100 V
0.007
Ω
I
D
P
TOT
30 W
STF110N10F7
STP110N10F7
45 A
TAB
110 A
150 W
•
Ultra low on-resistance
•
100% avalanche tested
3
3
2
2
1
1
TO-220FP
TO-220
Applications
•
Switching applications
Figure 1. Internal schematic diagram
Description
These devices utilize the 7
th
generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest R
DS(on)
in all
packages.
‘ꢅꢆꢇꢈ7$%ꢉ
*ꢅꢁꢉ
6ꢅꢊꢉ
$0ꢀꢁꢂꢃꢄYꢁ
Table 1. Device summary
Order codes
Marking
Package
Packaging
STF110N10F7
STP110N10F7
TO-220FP
TO-220
110N10F7
Tube
July 2013
DocID024058 Rev 2
1/16
This is information on a product in full production.
16
Contents
STF110N10F7, STP110N10F7
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
DocID024058 Rev 2
STF110N10F7, STP110N10F7
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
Unit
Symbol
Parameter
TO-220FP
TO-220
V
DS
V
GS
Drain-source voltage
100
± 20
V
V
Gate-source voltage
(1)
I
D
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
45
32
110
76
A
(1)
I
D
A
(2)
I
DM
180
30
415
150
A
(1)
P
TOT
T
o
tal dissipation at T
c
= 25 °C
Single pulse avalanche energy
Operating junction temperature
Storage temperature
W
mJ
°C
°C
(3)
E
AS
490
T
J
-55 to 175
T
stg
1. This
value is rated according to R
2. Limited
by safe operating area.
thj-c.
3. Starting
T =25 °C, I
=18, V
=50 V.
J
D
DD
Table 3. Thermal resistance
Parameter
Value
Symbol
Unit
TO-220FP
TO-220
R
thj-case
R
thj-amb
Thermal resistance junction-case
Thermal resistance junction-amb
5.00
1.00
°C/W
°C/W
62.50
DocID024058 Rev 2
3/16
Electrical characteristics
STF110N10F7, STP110N10F7
2
Electrical characteristics
(T
CASE
=25 °C unless otherwise specified)
Table 4. On/off states
Test conditions
Symbol
Parameter
Min. Typ.
Max. Unit
Drain-source breakdown
voltage (V
GS
= 0)
V
(BR)DSS
I
D
= 250 µA
100
–
V
V
DS
= 100 V
DS
= 100 V; T
C
=125 °C
1
µA
µA
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
V
10
Gate body leakage current
(V
DS
= 0)
I
GSS
V
GS
= 20 V
100
4.5
nA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
2.5
For TO-220FP:
V
GS
= 10
V
,
I
D
= 22.5 A
Static drain-source on-
resistance
R
DS(on)
5.1
7
m
Ω
For TO-220:
V
GS
= 10
V
,
I
D
= 55 A
Table 5. Dynamic
Test conditions
Symbol
Parameter
Min. Typ.
Max. Unit
C
iss
Input capacitance
–
–
5117
992
–
–
pF
pF
C
oss
Output capacitance
V
DS
=50 V, f=1 MHz,
V
GS
=0
Reverse transfer
capacitance
C
rss
–
39
–
pF
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
72
31
16
–
–
–
nC
nC
nC
V
DD
=50
V
,
I
D
= 110 A
V
GS
=10 V
Table 6. Switching times
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
25
36
52
21
–
–
–
–
ns
ns
ns
ns
V
DD
=50
V
,
I
D
= 55 A,
R
G
=4.7
Ω,
V
GS
= 10 V
Turn-off delay time
Fall time
4/16
DocID024058 Rev 2
STF110N10F7, STP110N10F7
Electrical characteristics
Min Typ.
Max. Unit
Table 7. Source drain diode
Parameter Test
conditions
Symbol
Source-drain current:
For TO-220FP
–
–
45
A
A
I
SD
For TO-220
110
Source-drain current (pulsed):
For TO-220FP
(1)
–
–
180
415
A
A
I
SDM
For TO-220
For TO-220FP:
SD
= 22.5 A, V
GS
=0
I
(2)
V
SD
Forward on voltage
–
1.2
V
For TO-220:
I
SD
= 55 A, V
GS
=0
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
–
–
–
77
150
4.3
ns
nC
A
I
SD
= 110 A,
Q
rr
di/dt = 100 A/µs,
V
DD
=80 V, T
j
=150 °C
I
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration=300 µs, duty cycle 1.5%
DocID024058 Rev 2
5/16
Electrical characteristics
STF110N10F7, STP110N10F7
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220FP
Figure 3. Thermal impedance for TO-220FP
AM15957v1
Zth_TOFPDEF
K
I
D
(A)
Tj=175°C
Tc=25°C
δ
=0.5
Single pulse
0.05
0.02
0.01
100
10
-2
10
100µs
10
-3
1ms
Single pulse
1
10ms
10
-4
10
-6
0.1
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t
p
(s)
V
DS
(V)
0.1
Figure 4. Safe operating area for TO-220
Figure 5. Thermal impedance for TO-220
AM15958v1
Zth_280TOL
I
D
(A)
K
Tj=175°C
Tc=25°C
δ
=0.5
Single pulse
100
0.05
0.02
0.01
10
-2
10
100µs
1ms
1
Single pulse
10ms
10
-3
0.1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t
p
(s)
V
DS
(V)
0.1
Figure 6. Output characteristics
Figure 7. Transfer characteristics
AM15948v1
AM15949v1
I
D
(A)
I
D
(A)
V
DS
=2V
V
GS
=8, 9, 10V
350
300
300
250
7V
250
200
150
100
50
200
150
6V
100
50
0
5V
4V
0
1
7
8
2
0
2
3
4
5
6
V
DS
(V)
0
4
6
8
V
GS
(V)
6/16
DocID024058 Rev 2
STF110N10F7, STP110N10F7
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
Figure 9. Static drain-source on-resistance for
TO-220FP
AM15950v1
AM15959v1
V
(V)
GS
R
DS(on)
(m
Ω
)
V
DD
=50V
12
5.25
5.20
5.15
5.10
5.05
I
D
=110A
V
GS
=10V
10
8
6
4
2
5.00
4.95
0
20
40
25
35
Q
g
(nC)
15
I
D
(A)
0
60
5
80
Figure 10. Static drain-source on-resistance for
TO-220
Figure 11. Capacitance variations
AM15960v1
AM15952v1
C
(pF)
R
DS(on)
(m
Ω
)
6000
5000
V
GS
=10V
5.3
5.2
Ciss
4000
3000
5.1
5.0
4.9
2000
1000
Coss
Crss
V
DS
(V)
0
40
60
80
0
70 80
20
I
D
(A)
20 30
40
50 60
100
10
0
Figure 12. Normalized gate threshold voltage vs
temperature
Figure 13. Normalized on-resistance vs
temperature
AM015953v1
AM15954v1
V
GS(th)
R
DS(on)
(norm)
(norm)
I
D
=250µA
2
1.2
1.1
1
I
D
=55A
1.8
1.6
1.4
1.2
0.9
0.8
0.7
0.6
1
0.8
0.6
0.4
0.5
0.4
-75
-75
-50
0
25 50 75
100 125
150
T
J
(°C)
-50
0
-25
25 50 75
150 T
100 125
J
(°C)
-25
DocID024058 Rev 2
7/16
Electrical characteristics
STF110N10F7, STP110N10F7
Figure 14. Normalized B
VDSS
vs temperature
Figure 15. Source-drain diode forward vs
temperature
AM15955v1
AM15956v1
V
(BR)DSS
SD
(V)
V
(norm)
I
D
=250µA
T
J
=-55°C
1.1
1.04
1.02
1
0.9
0.8
0.7
1.00
0.98
T
J
=25°C
T
J
=175°C
0.96
0.94
0.6
0.5
-75
100 125
0
-50
0
25 50 75
150 T
J
(°C)
20
60
I
SD
(A)
40
80
100
-25
8/16
DocID024058 Rev 2
STF110N10F7, STP110N10F7
Test circuits
3
Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
R
L
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
D
R
G
V
GS
2200
μ
F
D.U.T.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 18. Test circuit for inductive load
switching and diode recovery times
Figure 19. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.T.
B
3.3
μ
F
V
DD
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.T.
P
w
AM01470v1
AM01471v1
Figure 20. Unclamped inductive waveform
Figure 21. Switching time waveform
t
on
t
off
td
off
V
(BR)DSS
t
r
t
f
td
on
V
D
90%
10%
90%
I
DM
10%
V
GS
V
DS
I
D
0
0
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DocID024058 Rev 2
9/16
Package mechanical data
STF110N10F7, STP110N10F7
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
10/16
DocID024058 Rev 2
STF110N10F7, STP110N10F7
Package mechanical data
Table 8. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
DocID024058 Rev 2
11/16
Package mechanical data
STF110N10F7, STP110N10F7
Figure 22. TO-220FP drawing
7012510_Rev_K_B
12/16
DocID024058 Rev 2
STF110N10F7, STP110N10F7
Package mechanical data
Table 9. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
3.50
3.93
16.40
28.90
∅
Q
P
3.75
2.65
3.85
2.95
DocID024058 Rev 2
13/16
Package mechanical data
STF110N10F7, STP110N10F7
Figure 23. TO-220 type A drawing
ꢀꢀꢁꢄꢋꢌꢌBWSH$B5HYB7
14/16
DocID024058 Rev 2
STF110N10F7, STP110N10F7
Revision history
5
Revision history
Table 10. Document revision history
Changes
Date
Revision
03-Dec-2012
1
Initial release.
– Part numbers (STF45N10F7 and STH110N10F7-2) have been
moved to two separate datasheets
– Modified: title, I
DM
value for TO-220
– Added: E
AS
16-Jul-2013
2
– Minor text changes
DocID024058 Rev 2
15/16
STF110N10F7, STP110N10F7
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