STMicroelectronics-STP110N55F6

STP110N55F6  

N-channel 55 V, 4.5

Ω

typ., 110 A STripFET™ F6  

Power MOSFET in a TO-220 package  

Datasheet production

 

data  

–

Features  

Order code  

V

DS  

R

DS(on)

max.  

I

D  

TAB  

STP110N55F6  

55 V  

5.2 m

Ω

 

110 A  

•

Low gate charge  

•

Very low on-resistance  

3

2

1

•

High avalanche ruggedness  

TO-220  

Applications  

•

Switching applications  

Description  

Figure 1.

 

Internal schematic diagram  

This device is an N-channel Power MOSFET  

developed using the STripFET™ F6 technology,  

with a new trench gate structure. The resulting  

Power MOSFET exhibits a very low R

DS(on)

in all  

packages.  

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6ꢅꢊꢉ

 

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Table 1. Device summary  

Order code  

Marking  

110N55F6  

Packages  

Packaging  

STP110N55F6  

TO-220  

Tube  

July 2014  

DocID019059 Rev 2  

1/13  

This is information on a product in full production.  

Contents  

STP110N55F6  

Contents  

2/13  

DocID019059 Rev 2  

STP110N55F6  

Electrical ratings  

1

Electrical ratings  

Table 2. Absolute maximum ratings  

Parameter  

Symbol  

Value  

Unit  

V

DS  

V

GS  

I

D  

Drain-source voltage  

55  

± 20  

110  

85  

V

V

Gate-source voltage  

Drain current (continuous) at T

C

= 25 °C  

Drain current (continuous) at T

C

= 100 °C  

Drain current (pulsed)  

A

I

D  

A

(1)  

I

DM  

440  

150  

1

A

P

TOT  

T

o

tal dissipation at T

C

= 25 °C  

Derating factor  

W

W/°C  

T

stg  

T

j  

Storage temperature  

– 55 to 175  

°C  

Operating junction temperature  

1. Current

 

limited by package.  

Table 3. Thermal data  

Parameter  

Symbol  

Value  

Unit  

R

thj-case

Thermal resistance junction-case max  

R

thj-amb

Thermal resistance junction-ambient max  

1

°C/W  

°C/W  

62.5  

DocID019059 Rev 2  

3/13  

13  

Electrical characteristics  

STP110N55F6  

2

Electrical characteristics  

(T

CASE

= 25 °C unless otherwise specified)  

Table 4. On/off states  

Symbol  

Parameter  

Test conditions  

Min.  

Typ.  

Max. Unit  

Drain-source breakdown  

voltage  

V

(BR)DSS  

V

GS

= 0, I

D

= 250 µA  

55  

V

V

V

1

µA  

µA  

Zero gate voltage  

Drain current  

I

DSS  

100  

T

C

=125 °C  

Gate-body leakage  

current  

I

GSS  

V

DS

= 0, V

GS

= ± 20 V  

V

DS

= V

GS

, I

D

= 250 µA  

100  

4

nA  

V

V

GS(th)

Gate threshold voltage  

2

Static drain-source  

R

DS(on)  

V

4.5  

5.2  

m

Ω  

on- resistance  

Table 5. Dynamic  

Test conditions  

Symbol  

Parameter  

Min.  

Typ. Max.

 

Unit  

C

iss  

Input capacitance  

Output capacitance  

–

–

7390  

504  

–

–

pF  

pF  

C

oss  

V

GS

= 0, V

DS

= 25 V,  

f = 1 MHz  

Reverse transfer  

capacitance  

C

rss  

–

355  

–

pF  

Q

g  

Q

gs  

Q

gd  

T

o

tal gate charge  

Gate-source charge  

Gate-drain charge  

–

–

–

126  

32  

–

–

–

nC  

nC  

nC  

V

DD

= 44 V, I

D

= 110 A,  

V

38  

Table 6. Switching times  

Test conditions  

Symbol  

Parameter  

Min.  

Typ.  

Max. Unit  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on delay time  

Rise time  

–

–

–

–

23  

65  

–

–

–

–

ns  

ns  

ns  

ns  

V

DD

= 27.5

V

,

I

D

= 55 A  

R

G

= 4.7

Ω

V

GS

= 10 V  

Turn-off-delay time  

Fall time  

503  

237  

4/13  

DocID019059 Rev 2  

STP110N55F6  

Electrical characteristics  

Min. Typ. Max Unit  

Table 7. Source drain diode  

Test conditions  

Symbol  

Parameter  

I

SD  

Source-drain current  

–

–

–

–

–

110  

440  

1.5  

A

A

(1)  

I

SDM  

Source-drain current (pulsed)  

Forward on voltage  

(2)  

V

SD  

t

rr  

I

SD

= 110 A, V

GS

= 0  

V

Reverse recovery time  

Reverse recovery charge  

I

SD

= 110 A, V

DD

= 44 V  

di/dt = 100 A/µs,  

T

j

= 150 °C  

44  

82  

ns  

nC  

Q

rr  

I

RRM  

Reverse recovery current  

–

3.8  

A

1. Current

 

limited by package.  

2. Pulsed:

 

pulse duration = 300 µs, duty cycle 1.5%  

DocID019059 Rev 2  

5/13  

13  

Electrical characteristics  

STP110N55F6  

2.1  

Electrical characteristics (curves)  

Figure 2. Safe operating area  

Figure 3. Thermal impedance  

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Figure 4. Output characteristics  

Figure 5. Transfer characteristics  

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Figure 6. Gate charge vs gate-source voltage  

Figure 7. Static drain-source on-resistance  

AM15580v1  

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(V)  

GS  

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ꢉ

 

V

DD

=44V  

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12  

I

D

=110A  

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2

0

0

100  

50  

150  

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Q

g

(nC)  

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‘

ꢅ$ꢉ

 

6/13  

DocID019059 Rev 2  

STP110N55F6  

Electrical characteristics  

Figure 8. Capacitance variations  

Figure 9. Normalized gate threshold voltage vs  

temperature  

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AM15583v1  

V

GS(th)  

&

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(norm)  

I

D

=250µA  

1.2  

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0.4  

0.2  

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-50 -25  

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0

25 50  

125  

T

J

(°C)  

ꢄꢀ

 

75 100  

Figure 10. Normalized on-resistance vs  

temperature  

Figure 11. Source-drain diode forward  

characteristics  

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Figure 12. Normalized V

(BR)DSS

vs temperature  

AM15585v1  

V

(BR)DSS  

(norm)  

1.15  

1.1  

I

D

= 1mA  

1.05  

1

0.95  

0.9  

-75  

125  

T

-50  

-25  

0

25 50  

J

(°C)  

75 100  

DocID019059 Rev 2  

7/13  

13  

Test circuits  

STP110N55F6  

3

Test circuits  

Figure 13. Switching times test circuit for  

resistive load  

Figure 14. Gate charge test circuit  

V

DD  

12V  

47k

Ω

 

1k

Ω  

100nF  

2200  

μ

F  

3.3  

μ

F  

R

L  

I

G

=CONST  

V

DD  

100

Ω  

V

i

=20V=V

GMAX  

D.U.T.  

V

D  

R

G  

V

GS  

2200  

μ

F  

D.U.T.  

V

G  

2.7k

Ω  

47k

Ω  

P

W  

1k

Ω  

P

W  

AM01468v1  

AM01469v1  

Figure 15. Test circuit for inductive load  

switching and diode recovery times  

Figure 16. Unclamped inductive load test circuit  

L

A

A

A

B

D

S

FAST  

DIODE  

L=100

μ

H  

V

D  

G

2200  

μ

F  

D.U.T.  

B

3.3  

μ

F  

V

DD  

3.3  

μ

F  

1000  

μ

F  

B

V

DD  

25  

Ω

I

D  

D

G

R

G  

S

V

i  

D.U.T.  

P

w  

AM01470v1  

AM01471v1  

Figure 17. Unclamped inductive waveform  

Figure 18. Switching time waveform  

t

on  

td

on  

t

off  

td

off  

V

(BR)DSS  

t

r  

t

f  

V

D  

90%  

10%  

90%  

I

DM  

10%  

V

GS  

V

DS  

I

D  

0

0

V

DD  

V

DD  

90%  

10%  

AM01472v1  

AM01473v1  

8/13  

DocID019059 Rev 2  

STP110N55F6  

Package mechanical data  

4

Package mechanical data  

In order to meet environmental requirements, ST offers these devices in different grades of  

ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK

®  

specifications, grade definitions and product status are available at:

.  

ECOPACK is an ST trademark.  

DocID019059 Rev 2  

9/13  

13  

Package mechanical data  

STP110N55F6  

Figure 19. TO-220 type A drawing  

ꢀꢀꢁꢄꢏꢎꢎBWSH$B5HYB7

 

10/13  

DocID019059 Rev 2  

STP110N55F6  

Package mechanical data  

Table 8. TO-220 type A mechanical data  

mm  

Dim.  

Min.  

Typ.  

Max.  

A

b

4.40  

0.61  

1.14  

0.48  

15.25  

4.60  

0.88  

1.70  

0.70  

15.75  

b1  

c

D

D1  

E

1.27  

10  

10.40  

2.70  

5.15  

1.32  

6.60  

2.72  

14  

e

2.40  

4.95  

1.23  

6.20  

2.40  

13  

e1  

F

H1  

J1  

L

L1  

L20  

L30  

øP  

Q

3.50  

3.93  

16.40  

28.90  

3.75  

2.65  

3.85  

2.95  

DocID019059 Rev 2  

11/13  

13  

Revision history  

STP110N55F6  

5

Revision history  

Table 9. Document revision history  

Changes  

Date  

Revision  

18-Jul-2011  

1

First release.  

– Modified: title and

– Modified: I

D

(at T

C

= 100 °C) value in

– Modified: R

DS(on)

typical value  

11-Jul-2014  

2

– Modified: the entire typical values in

,

and

– Added:

– Updated:

– Minor text changes  

12/13  

DocID019059 Rev 2  

STP110N55F6  

IMPORTANT NOTICE – PLEASE READ CAREFUL

L

Y  

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T

.

A

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DocID019059 Rev 2  

13/13  

13