STMicroelectronics-STP11NK50Z
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STB11NK50Z – STP11NK50ZFP
STP11NK50Z
N-channel 500
V
,
0
.48
Ω
, 10 A
TO-220, TO-220F
P
,
D
2
P
A
K
Zener-protected SuperMESH
TM
Power MOSFET
Features
R
DS(on)
Type
V
DSS
I
D
Pw
max
500 V
< 0.52
Ω
10 A
125 W
STB11NK50Z
3
3
2
2
1
1
STP11NK50ZFP 500
V <
0.52
Ω
10 A
30 W
STP11NK50Z 500
V <
0.52
Ω
10 A
125 W
TO-220FP
TO-220
■
Extremely high dv/dt capability
■
100% avalanche tested
3
1
D
2
P
A
K
■
Gate charge minimized
■
Very low intrinsic capacitances
Application
■
Switching applications
Figure 1.
Internal schematic diagram
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB11NK50ZT4
STP11NK50ZFP
STP11NK50Z
B11NK50Z
P11NK50ZFP
P11NK50Z
D²
P
A
K
TO-220FP
TO-220
T
a
pe and reel
T
u
be
T
u
be
May 2008
Rev 6
1/16
16
Contents
STB11NK50Z – STP11NK50ZFP – STP11NK50Z
Contents
1
2
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
3
5
6
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/16
STB11NK50Z – STP11NK50ZFP – STP11NK50Z
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
TO-220
D²
P
A
K
TO-220FP
V
DS
V
GS
I
D
Drain-source voltage (V
GS
= 0)
Gate-source voltage
500
30
V
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
=100 °C
Drain current (pulsed)
10
6.3
40
125
1
10
(1)
6.3
(1)
40
(1)
30
A
A
I
D
(2)
I
DM
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
Derating factor
W
0.24
W/°C
Gate source ESD (HBM-C= 100 p
F
,
V
ESD(G-S)
4000
4.5
V
R= 1.5 k
Ω
)
dv/dt
(3)
V
ISO
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
V/ns
V
—
2500
T
J
Operating junction temperature
Storage temperature
-55 to 150
°C
T
stg
1. Limited
only by maximum temperature allowed
2. Pulse
width limited by safe operating area
3.
I
SD
≤
10 A, di/dt
≤
200 A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
.
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
TO-220
TO-220FP
D²
P
A
K
R
thj-case
Thermal resistance junction-case max
1
4.2
°C/W
°C/W
R
thj-a
T
l
Thermal resistance junction-ambient max
62.5
300
Maximum lead temperature for soldering
purpose
°C
Table 4.
Avalanche characteristics
Parameter
Symbol
Value
Unit
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
I
AS
10
A
Single pulse avalanche energy
E
AS
190
mJ
(starting T
J
= 25 °C, I
D
=I
AR
, V
DD
= 50 V)
3/16
Electrical characteristics
STB11NK50Z – STP11NK50ZFP – STP11NK50Z
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
500
V
V
DS
= Max rating,
1
µA
µA
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
V
DS
= Max rating @125 °C
50
Gate body leakage current
(V
DS
= 0)
I
GSS
V
GS
= 20
V
±
10
µA
V
GS(th)
R
DS(on)
V
DS
= V
GS
, I
D
= 100 µA
V
GS
= 10
V
,
I
D
= 4.5 A
Gate threshold voltage
3
3.75
0.48
4.5
V
Static drain-source on
resistance
0.52
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
V
DS
=15
V
,
I
D
= 4.5 A
Forward transconductance
7.7
S
g
fs
C
iss
C
oss
C
rss
Input capacitance
1390
173
42
pF
pF
pF
Output capacitance
V
DS
=25
V
,
f
=1 MHz, V
GS
=0
Reverse transfer
capacitance
(2)
Equivalent output
capacitance
C
oss eq
.
V
GS
=0, V
DS
=0 to 400 V
110
pF
Q
g
Q
gs
Q
gd
V
DD
=400
V
,
I
D
= 11.4 A
V
GS
=10 V
T
o
tal gate charge
Gate-source charge
Gate-drain charge
49
10
25
68
nC
nC
nC
1. Pulsed:
pulse duration=300µs, duty cycle 1.5%
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
4/16
STB11NK50Z – STP11NK50ZFP – STP11NK50Z
Electrical characteristics
Min. Typ. Max.
Unit
Table 7.
Symbol
Switching times
Parameter
Test conditions
V
DD
= 250
V
,
I
D
=5.5 A,
R
G
= 4.7
Ω
,
V
GS
=10 V
t
d(on)
t
r
T
u
rn-on delay time
Rise time
14.5
18
ns
ns
V
DD
= 250
V
,
I
D
=5.5 A,
t
d(off)
t
f
T
u
rn-off delay time
Fall time
41
15
ns
ns
R
G
= 4.7
Ω
,
V
GS
=10 V
t
r(Voff)
V
DD
=400
V
,
I
D
=11.4 A,
R
G
=4.7
Ω
,
V
GS
=10 V
Off-voltage rise time
Fall time
11.5
12
ns
ns
ns
t
f
Cross-over time
27
t
c
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max Unit
I
SD
Source-drain current
10
40
A
A
V
(1)
Source-drain current (pulsed)
Forward on voltage
I
SDM
(2)
I
SD
=10 A, V
GS
=0
I
SD
=10 A,
1.6
V
SD
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
308
2.4
16
ns
µC
A
Q
rr
di/dt = 100 A/µs,
V
DD
=45
V
,
T
j=150 °C
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration=300µs, duty cycle 1.5%
Table 9.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max.
Unit
(1)
Gate-source breakdown voltage
Igs= 1mA
(open drain)
30
V
BV
GSO
1. The
built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capabilit
y
, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrit
y
.
T
hese integrated Zener diodes thus avoid the
usage of external components.
5/16
Electrical characteristics
STB11NK50Z – STP11NK50ZFP – STP11NK50Z
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220 /
D²
P
A
K
Figure 3.
Thermal impedance for TO-220 /
D²
P
A
K
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Output characteristics
Figure 7.
Transfer characteristics
6/16
STB11NK50Z – STP11NK50ZFP – STP11NK50Z
Figure 8.
Transconductance
Electrical characteristics
Figure 9.
Static drain-source on resistance
Figure 10.
Gate charge vs gate-source voltage
Figure 11.
Capacitance variations
Figure 12.
Normalized gate threshold voltage
Figure 13.
Normalized on resistance vs
vs temperature
temperature
7/16
Electrical characteristics
STB11NK50Z – STP11NK50ZFP – STP11NK50Z
Figure 14.
Source-drain diode forward
characteristics
Figure 15.
Normalized B
vs temperature
VDSS
Figure 16.
Maximum avalanche energy vs
temperature
8/16
STB11NK50Z – STP11NK50ZFP – STP11NK50Z
Test circuit
3
Test circuit
Figure 17.
Switching times test circuit for
resistive load
Figure 18.
Gate charge test circuit
Figure 19.
Test circuit for inductive load
switching and diode recovery times
Figure 20.
Unclamped Inductive load test
circuit
Figure 21.
Unclamped inductive waveform
Figure 22.
Switching time waveform
9/16
Package mechanical data
STB11NK50Z – STP11NK50ZFP – STP11NK50Z
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
10/16
STB11NK50Z – STP11NK50ZFP – STP11NK50Z
Package mechanical data
TO-220 mechanical data
mm
Typ
inch
Dim
Min
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.4
8
15.25
4.60
0.
88
1.70
0.70
15.75
0.17
3
0.024
0.044
0.01
9
0.6
0.1
8
1
0.0
3
4
0.066
0.027
0.62
b
1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.
3
2
6.60
2.72
14
0.
393
0.0
9
4
0.1
9
4
0.04
8
0.244
0.0
9
4
0.511
0.1
3
7
0.40
9
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.
9
5
1.2
3
6.20
2.40
1
3
e1
F
H1
J1
L
L1
L20
L
3
0
∅
P
Q
3
.50
3
.
93
16.40
0.645
2
8
.
9
0
1.1
3
7
3
.75
3
.
8
5
2.
9
5
0.147
0.104
0.151
0.116
2.65
11/16
Package mechanical data
STB11NK50Z – STP11NK50ZFP – STP11NK50Z
TO-220FP mechanical data
mm.
Typ
inch
Typ.
Dim.
Min.
4.40
2.5
Max.
4.60
2.7
Min.
Max.
0.1
8
1
0.106
0.10
8
0.027
0.0
39
0.067
0.067
0.204
0.106
0.40
9
A
B
0.17
3
0.0
98
0.0
98
0.017
0.0
3
0
0.045
0.045
0.1
9
5
0.0
9
4
0.
393
D
2.5
2.75
0.70
1.00
1.50
1.50
5.20
2.70
10.40
E
0.45
0.75
1.15
1.15
4.
9
5
2.40
10
F
F1
F2
G
G1
H
L2
L
3
L4
L5
L6
L7
Di
a
16
0.6
3
0
2
8
.6
9
.
8
0
2.
9
3
0.6
10.60
3
.6
1.126
0.
38
5
0.114
0.626
0.
3
54
0.11
8
1.204
0.417
0.141
0.645
0.
3
66
0.126
15.
9
0
9
16.40
9
.
3
0
3
.2
3
L3
L6
L7
Di
a
1
2 3
L5
L2
L4
7012510-I
12/16
STB11NK50Z – STP11NK50ZFP – STP11NK50Z
Package mechanical data
D²
P
A
K (TO-26
3
) mechanical data
mm
Typ
inch
Dim
Min
Max
Min
Typ
Max
A
A1
b
4.40
0.0
3
0.70
1.14
0.45
1.2
3
8
.
9
5
7.50
10
4.60
0.2
3
0.
93
1.70
0.60
1.
3
6
9
.
3
5
0.17
3
0.001
0.027
0.045
0.017
0.04
8
0.
3
52
0.2
9
5
0.
39
4
0.
33
4
0.1
8
1
0.00
9
0.0
3
7
0.067
0.024
0.05
3
0.
3
6
8
b
2
c
c2
D
D1
E
10.40
0.40
9
E1
e
8
.50
2.54
0.1
e1
H
4.
88
15
5.2
8
15.
8
5
2.6
9
2.7
9
1.40
1.75
0.1
9
2
0.5
9
0
0.0
99
0.0
9
0
0.05
0.20
8
0.624
0.106
0.110
0.055
0.06
9
J1
L
2.4
9
2.2
9
1.27
1.
3
0
L1
L2
R
0.051
0.4
0.016
V2
0°
8
°
0°
8
°
0079457_M
13/16
Packaging mechanical data
STB11NK50Z – STP11NK50ZFP – STP11NK50Z
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504
0.520
0795
26.4 0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7
0.413 0.421
15.7 15.9
0.618 0.626
A0
B0
D
1.5
1.6 0.059
0.063
D1
E
1.59 1.61
0.062 0.063
1.65 1.85
0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449
0.456
5.0 0.189
0.197
4.1 0.153
0.161
12.1 0.468
0.476
2.1 0.075
0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35
0.0098 0.0137
23.7 24.3
0.933 0.956
W
* on sales type
14/16
STB11NK50Z – STP11NK50ZFP – STP11NK50Z
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16/16
