STMicroelectronics-STP11NM60
| Part # | STMicroelectronics-STP11NM60 |
Download  | STMicroelectronics-STP11NM60 |
STB11NM60T4, STP11NM60
Datasheet
N-channel 600
V
,
0
.4 Ω typ., 11 A, MDmesh™ II Power MOSFE
T
s
i
n D²PAK and
TO-220 packages
Features
V
DSS
TAB
R
max.
I
D
Order codes
Package
TAB
DS(on)
(@ T
)
Jmax
STB11NM60T4
STP11NM60
D²PAK
3
650 V
0.45 Ω
11 A
1
3
D
2
PAK
TO-220
2
TO-220
1
•
•
•
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
D(2, TAB)
Applications
•
Switching applications
G(1)
Description
These devices are N-channel Power MOSFE
T
s
d
eveloped using the second
generation of MDmesh™ technology. These revolutionary Power MOSFE
T
s
associate a vertical structure to the company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. They are therefore suitable for the most
demanding high-efficiency converters.
S(3)
AM01475v1_noZen
Product status link
Product summary
Order code
Marking
STB11NM60T4
B11NM60
D²PAK
Package
Packing
T
a
pe and reel
STP11NM60
P11NM60
TO-220
Order code
Marking
Package
Packing
Tube
DS3653
–
Rev 7
–
October 2018
For further information contact your local STMicroelectronics sales office.
STB11NM60T4, STP11NM60
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
600
±30
11
Unit
V
V
Gate-source voltage
Gate- source voltage
DS
GS
V
V
I
Drain current (continuous) at T
= 25 °C
D
D
C
A
I
Drain current (continuous) at T
= 100 °C
7
C
I
Drain current (pulsed)
44
A
W
DM
P
T
o
tal dissipation at T
= 25 °C
160
15
TOT
C
Peak diode recovery voltage slope
Storage temperature range
V/ns
T
stg
-65 to 150
°C
T
Operating junction temperature range
j
1. Pulse
width limited by safe operating area.
2. ≤
11 A, di/dt ≤ 400 A/μs, V
≤ V
I
, T
≤ T
.
SD
DD
(BR)DSS
j
JMAX
Table 2.
Thermal data
Value
Symbol
Parameter
Unit
2
TO-220
D PAK
R
thj-case
Thermal resistance junction-case
0.78
R
Thermal resistance junction-ambient
Thermal resistance junction-pcb
62.5
°C/W
thj-amb
R
35
thj-pcb
1. When
mounted on 1inch² FR-4 board, 2 oz Cu.
Table 3.
Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or non-repetitive (pulse width limited by T
Value
Unit
A
I
)
jmax
5.5
AR
E
Single pulse avalanche energy (starting T
= 25 °C, I
= I
, V
= 50 V)
j D
AR DD
350
mJ
AS
DS3653
–
Rev 7
page 2/21
STB11NM60T4, STP11NM60
Electrical characteristics
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified).
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
V
V
V
= 0
V
, I
=
2
50 μA
Drain-source breakdown voltage
600
(BR)DSS
GS
GS
GS
D
= 0
V
, V
=
6
00 V
1
µA
DS
I
Zero gate voltage drain current
DSS
V
T
= 0
V
, V
=
6
00
V
,
DS
10
µA
C
I
V
V
V
= 0
V
, V
=
±
30 V
Gate-body leakage current
Gate threshold voltage
±100
5
nA
V
GSS
DS
GS
V
= V
, I
= 250 µA
3
4
GS(th)
DS(on)
DS
GS
GS
D
R
= 10 V, I
= 5.5 A
D
Static drain-source on-resistance
0.4
0.45
Ω
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Test conditions
Symbol
Parameter
Min.
Typ.
1000
230
25
Max.
Unit
pF
pF
pF
pF
Ω
C
iss
Input capacitance
–
–
–
–
–
–
–
–
–
–
–
–
–
–
C
oss
V
= 25
V
, f = 1
M
Hz, V
= 0 V
GS
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
DS
DS
C
rss
V
= 0 V to 480
V
, V
= 0 V
C
oss eq.
100
1.6
GS
R
G
f = 1 MHz open drain
Q
V
V
= 480
V
, I
= 11 A,
30
nC
nC
g
DD
GS
D
= 0 to 10 V
Q
gs
Gate-source charge
10
Q
Gate-drain charge
–
15
–
nC
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Min.
Typ.
Max.
Unit
t
V
= 300
V
, I
=
5
.5 A,
DD D
–
20
–
ns
d(on)
R
G
= 4.7 Ω, V
= 10 V
GS
t
Rise time
–
20
–
ns
r
t
V
= 480
V
, I
= 11 A,
Off-voltage rise time
Fall time
–
–
6
–
–
ns
ns
r(Voff)
DD
D
R
= 4.7 Ω, V
= 10 V (see
t
f
G
GS
11
t
Cross-over time
–
19
–
ns
c
DS3653
–
Rev 7
page 3/21
STB11NM60T4, STP11NM60
Electrical characteristics
Table 7.
Source drain diode
Test conditions
Symbol
Parameter
Source-drain current
Min.
Typ.
Max.
11
Unit
A
I
–
–
–
–
–
SD
I
Source-drain current (pulsed)
Forward on voltage
44
A
SDM
V
V
I
= 0
V
, I
= 11 A
SD
1.5
V
GS
SD
t
rr
= 11 A, di/dt = 100 A/µs,
= 100 V
Reverse recovery time
Reverse recovery charge
390
3.8
ns
μC
SD
V
Q
DD
rr
I
Reverse recovery current
–
19.5
A
RRM
t
I
= 11 A, di/dt = 100 A/µs,
= 100
V
, T
=
1
50 °C
Reverse recovery time
–
–
570
5.7
ns
rr
SD
V
Q
DD
j
Reverse recovery charge
μC
rr
I
Reverse recovery current
–
20
A
RRM
1. Pulse
width is limited by safe operating area
2. Pulse
test: pulse duration = 300 µs, duty cycle 1.5%
DS3653
–
Rev 7
page 4/21
STB11NM60T4, STP11NM60
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 4.
Transfer characteristics
Figure 3.
Output characteristics
Figure 5.
Normalized gate threshold voltage vs
temperature
Figure 6.
Static drain-source on-resistance
DS3653
–
Rev 7
page 5/21
STB11NM60T4, STP11NM60
Electrical characteristics (curves)
Figure 7.
Normalized on-resistance vs temperature
Figure 8.
Gate charge vs gate-source voltage
Figure 9.
Capacitance variations
Figure 10.
Source-drain diode forward characteristics
DS3653
–
Rev 7
page 6/21
STB11NM60T4, STP11NM60
Test circuits
3
Test circuits
Figure 11.
Test circuit for resistive load switching times
Figure 12.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 13.
Test circuit for inductive load switching and
diode recovery times
Figure 14.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
I
D
25 Ω
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 16.
Switching time waveform
Figure 15.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DS3653
–
Rev 7
page 7/21
STB11NM60T4, STP11NM60
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
DS3653
–
Rev 7
page 8/21
STB11NM60T4, STP11NM60
D²PAK (TO-263) type A package information
4.1
D²PAK (TO-263) type A package information
Figure 17.
D²PAK (TO-263) type A package outline
0079457_25
DS3653
–
Rev 7
page 9/21
STB11NM60T4, STP11NM60
D²PAK (TO-263) type A package information
Table 8.
D²PAK (TO-263) type A package mechanical data
mm
Dim.
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
1.10
10.00
8.30
6.85
Typ.
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
8.00
1.50
10.40
8.70
7.25
A
A1
b
b2
c
c2
D
D1
D2
E
7.75
1.30
E1
E2
e
8.50
7.05
2.54
e1
H
4.88
15.00
2.49
2.29
1.27
1.30
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
L1
L2
R
0.40
V2
0°
8°
DS3653
–
Rev 7
page 10/21
STB11NM60T4, STP11NM60
D²PAK packing information
4.2
D²PAK packing information
Figure 18.
D²PAK tape outline
DS3653
–
Rev 7
page 11/21
STB11NM60T4, STP11NM60
D²PAK packing information
Figure 19.
D²PAK reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
Full radius
2.5mm min.width
AM06038v1
Table 9.
D²PAK tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
10.5
15.7
1.5
Max.
Min.
Max.
A0
B0
D
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base quantity
Bulk quantity
1000
1000
50
T
0.25
23.7
0.35
24.3
W
DS3653
–
Rev 7
page 12/21
STB11NM60T4, STP11NM60
D²PAK (TO-263) type B package information
4.3
D²PAK (TO-263) type B package information
Figure 20.
D²PAK (TO-263) type B package outline
0079457_25_B
DS3653
–
Rev 7
page 13/21
STB11NM60T4, STP11NM60
D²PAK (TO-263) type B package information
Table 10.
D²PAK (TO-263) type B mechanical data
mm
Dim.
Min.
4.36
0
Typ.
Max.
4.56
0.25
0.90
0.89
1.37
1.46
0.694
0.534
1.34
9.00
7.50
10.55
8.70
A
A1
b
0.70
0.51
1.17
1.36
0.38
0.38
1.19
8.60
6.90
10.15
8.10
b1
b2
b3
c
c1
c2
D
D1
E
E1
e
2.54 BSC
H
15.00
1.90
15.60
2.50
1.65
1.78
L
L1
L2
L3
L4
0.25
4.78
5.28
DS3653
–
Rev 7
page 14/21
STB11NM60T4, STP11NM60
D²PAK type B packing information
Figure 21.
D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint
4.4
D²PAK type B packing information
Figure 22.
D²PAK type B tape outline
DS3653
–
Rev 7
page 15/21
STB11NM60T4, STP11NM60
D²PAK type B packing information
Figure 23.
D²PAK type B reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
Full radius
2.5mm min.width
AM06038v1
Table 11.
D²PAK type B reel mechanical data
mm
Dim.
Min.
Max.
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
DS3653
–
Rev 7
page 16/21
STB11NM60T4, STP11NM60
TO-220 type A package information
4.5
TO-220 type A package information
Figure 24.
TO-220 type A package outline
0015988_typeA_Rev_21
DS3653
–
Rev 7
page 17/21
STB11NM60T4, STP11NM60
TO-220 type A package information
Table 12.
TO-220 type A package mechanical data
mm
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
Typ.
Max.
4.60
0.88
1.55
0.70
15.75
A
b
b1
c
D
D1
E
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
16.40
28.90
3.75
2.65
3.85
2.95
DS3653
–
Rev 7
page 18/21
STB11NM60T4, STP11NM60
Revision history
Table 13.
Document revision history
Date
Version
Changes
09-Sep-2004
10-Jun-2005
26-Jul-2006
31-Aug-2006
21-Dec-2006
12-Jan-2007
1
2
3
4
5
6
First release
Typing error, wrong description
The document has been reformatted, no content change
Typo mistake on order code
Various changes on
“
T
e
st conditions” for
T
a
ble 5
. and
T
a
ble 6
.
Order code has been corrected
The part numbers STB11NM60-1 and STP11NM60FP have been moved to a
separate datasheet and the document has been updated accordingly.
01-Oct-2018
7
Minor text changes.
DS3653
–
Rev 7
page 19/21
STB11NM60T4, STP11NM60
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
D²PAK (TO-263) type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
D²PAK packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
10
D²PAK (TO-263) type B package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
12
D²PAK type B packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
15
TO-220 type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
16
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19
DS3653
–
Rev 7
page 20/21
STB11NM60T4, STP11NM60
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of S
T
.
A
ll other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS3653
–
Rev 7
page 21/21
