STMicroelectronics-STP12N65M5
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STF12N65M5, STP12N65M5
Datasheet
N-channel 650 V, 390 mΩ typ., 8.5 A MDmesh M5 Power MOSFET
in a TO-220FP and TO-220 packages
Features
TAB
V
@ T
max.
R
max.
I
D
Order code
STF12N65M5
STP12N65M5
DS
J
DS(on)
710 V
430 mΩ
8.5 A
3
3
2
2
1
1
•
•
•
•
Extremely low R
DS(on)
TO-220FP
TO-220
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
D(2, TAB)
Applications
•
Switching applications
G(1)
Description
S(3)
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative
vertical process technology combined with the well-known PowerMESH horizontal
layout. The resulting product offers extremely low on-resistance, making it particularly
suitable for applications requiring high power and superior efficiency.
AM01475v1_noZen
Product status links
Product summary
Order code
STF12N65M5
Marking
Package
Packing
12N65M5
TO-220FP
Tube
Order code
Marking
STP12N65M5
12N65M5
TO-220
Package
Packing
Tube
DS6117
–
Rev 6
–
March 2022
For further information contact your local STMicroelectronics sales office.
STF12N65M5, STP12N65M5
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Value
Unit
TO-220FP TO-220
Symbol
V
V
Drain-source voltage
Gate-source voltage
650
25
V
V
DS
GS
34
Drain current (continuous) at T
= 25 °C
8.5
5.4
34
C
I
A
D
Drain current (continuous) at T
= 100 °C
C
I
Drain current (pulsed)
A
W
DM
P
T
o
tal power dissipation at T
= 25 °C
25
70
TOT
C
I
Avalanche current, repetitive or not repetitive (pulse width limited by T
max.)
2.5
150
15
A
AR
J
E
Single pulse avalanche energy (starting T
= 25 °C, I
= I
, V
= 50 V)
mJ
V/ns
AS
J
D
AR
DD
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all three leads to external heat sink
V
2.5
kV
ISO
(t = 1 s, T
= 25 °C)
C
T
Storage temperature range
°C
°C
stg
-55 to 150
T
Operating junction temperature range
J
1. Limited
by maximum junction temperature.
2. Pulse
width is limited by safe operating area.
3.
I
≤ 8.5 A, di/dt ≤ 400 A/μs, V
(peak) < V
, V
= 400 V.
(BR)DSS DD
SD
DS
Table 2.
Thermal data
Parameter
Value
Symbol
Unit
TO-220FP TO-220
5.00 1.79
R
thJC
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
°C/W
°C/W
R
thJA
62.5
DS6117
–
Rev 6
page 2/15
STF12N65M5, STP12N65M5
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified.
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
V
V
GS
V
GS
V
GS
V
DS
V
DS
V
GS
= 0
V
, I
= 1
m
A
Drain-source breakdown voltage
650
V
(BR)DSS
D
= 0
V
, V
=
6
50 V
1
DS
I
Zero gate voltage drain current
µA
DSS
100
DS
C
I
= 0
V
, V
=
±
25 V
Gate-body leakage current
Gate threshold voltage
100
5
nA
V
GSS
GS
V
= V
, I
= 250 µA
3
4
GS(th)
DS(on)
GS
D
R
= 10
V
, I
=
4
.3 A
D
Static drain-source on-resistance
390
430
mΩ
1. Specified
by design, not tested in production.
Table 4.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ. Max. Unit
C
iss
–
–
–
900
22
2
–
–
–
pF
pF
pF
C
oss
V
= 100 V, f = 1 MHz, V
= 0 V
Output capacitance
DS
DS
GS
C
rss
Reverse transfer capacitance
Equivalent capacitance time
related
C
–
–
64
21
–
–
pF
pF
o(tr)
V
= 0 to 520
V
, V
= 0 V
GS
Equivalent capacitance energy
related
C
o(er)
R
f = 1 MHz, I
= 0 A
D
Intrinsic gate resistance
T
o
tal gate charge
–
–
–
–
5
–
–
–
–
Ω
g
Q
20
4.8
8.3
nC
nC
nC
g
V
= 520 V, I
= 4.25 A, V
= 0 to 10 V
D GS
DD
Q
gs
Gate-source charge
Gate-drain charge
Q
gd
1.
2.
C
value.
is an equivalent capacitance that provides the same charging time as C
while V
is rising from 0 V to the stated
oss DS
o(tr)
C
is an equivalent capacitance that provides the same stored energy as C
while V
is rising from 0 V to the stated
oss DS
o(er)
value.
Table 5.
Switching times
Symbol
Parameter
Voltage delay time
Test conditions
Min.
Typ. Max. Unit
t
–
–
–
–
22.6
17.6
15.6
23.4
–
–
–
–
ns
ns
ns
ns
V
= 400 V, I
= 5 A,
d(v)
DD
D
R
= 4.7 Ω, V
= 10 V
t
Voltage rise time
Current fall time
Crossing time
G
GS
r(v)
t
f(i)
t
c(off)
DS6117
–
Rev 6
page 3/15
STF12N65M5, STP12N65M5
Electrical characteristics
Table 6.
Source-drain diode
Test conditions
Symbol
Parameter
Source-drain current
Min.
Typ. Max. Unit
I
–
–
–
–
–
8.5
34
A
A
SD
I
Source-drain current (pulsed)
Forward on voltage
SDM
V
I
I
= 8.5 A, V
= 0 V
1.5
V
SD
GS
SD
t
rr
= 8.5 A, di/dt = 100 A/µs,
= 100 V
Reverse recovery time
Reverse recovery charge
230
2.2
ns
µC
SD
V
Q
DD
rr
I
Reverse recovery current
–
19
A
RRM
t
I
= 8.5 A, di/dt = 100 A/µs,
= 100
V
, T
=
1
50 °C
Reverse recovery time
–
–
280
2.7
ns
rr
SD
V
Q
DD
J
Reverse recovery charge
µC
rr
I
Reverse recovery current
–
19
A
RRM
1. Pulse
width is limited by safe operating area.
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%.
DS6117
–
Rev 6
page 4/15
STF12N65M5, STP12N65M5
Electrical characteristics curves
2.1
Electrical characteristics (curves)
Figure 2.
Normalized transient thermal impedance for
TO-220FP
Figure 1.
Safe operating area for TO-220FP
AM05573v1
I
D
(A)
GC20940
K
10
1
10
-1
10µs
100µs
10
0
1ms
Z
th
= k
R
thJC
*
δ = t
p
/
Ƭ
10
-2
10ms
10
-1
10
-2
T
J
= 150 °C
T
C
= 25 °C
Single pulse
t
p
Ƭ
10
-3
10
-4
10
-1
10
0
10
1
10
2
V
DS
(V)
10
-3
10
-2
10
-1
10
0
t
p
(s)
Figure 4.
Normalized transient thermal impedance for
TO-220
Figure 3.
Safe operating area for TO-220
AM05572v1
I
D
(A)
10
1
10µs
100µs
10
0
1ms
Z
th
= k
R
thJC
*
δ = t
p
/
Ƭ
10ms
10
-1
10
-2
T
J
= 150 °C
T
C
= 25 °C
Single pulse
t
p
Ƭ
10
-1
10
0
10
1
10
2
V
DS
(V)
Figure 5.
Typical output characteristics
Figure 6.
Typical transfer characteristics
AM05576v1
AM05575v1
I
D
(A)
I
D
(A)
V
GS
=10V
14
12
V
DS
= 20V
12
10
8
10
7V
8
6
4
6
6V
4
2
0
2
0
5V
0
10
30 V
DS
8
V
GS
(V)
0
4
DS6117
–
Rev 6
page 5/15
STF12N65M5, STP12N65M5
Electrical characteristics curves
Figure 7.
Typical gate charge characteristics
Figure 8.
Typical drain-source on-resistance
AM05578v1
AM05577v1
V
(V)
R
DS(on)
(mΩ)
V
GS
(V)
DS
V
DD
=520V
430
12
500
V
GS
= 10 V
I
D
=4.25A
V
DS
380
330
280
230
180
10
8
400
300
200
6
4
2
0
100
0
130
80
0
1
2
3
4
5
6
7
8
9
I
D
(A)
10
Q
g
0
5
15
Figure 9.
Typical capacitance characteristics
Figure 10.
Typical output capacitance stored energy
AM05580v1
E
oss
(µJ)
AM05579v1
C
(pF)
4.0
3.5
3.0
10
3
C
iss
2.5
10
2
C
oss
f = 1 MHz
10
1
C
rss
V
DS
(V)
10
0
10
-1
500
300
600
DS
10
0
10
1
10
2
Figure 11.
Normalized gate threshold voltage vs
temperature
Figure 12.
Normalized on-resistance vs temperature
AM05501v2
R
DS(on)
AM05581v1
V
GS(th)
(norm.)
(norm.)
D
= 4.25 A
V
GS
= 10 V
I
D
= 250 µA
3
8
J
J
(°C)
DS6117
–
Rev 6
page 6/15
STF12N65M5, STP12N65M5
Electrical characteristics curves
Figure 13.
Normalized breakdown voltage vs temperature
Figure 14.
Typical reverse diode forward characteristics
AM05583v1
AM05584v1
V
SD
V
(BR)DSS
(V)
(norm.)
T =-50°C
J
1.07
1.2
T =25°C
1.05
J
1.0
I
D
= 1 mA
1.03
1.01
0.99
0.8
0.6
T =150°C
J
0.4
0.97
0.95
0.93
0.2
0
-50
0
-25
0
25 50 75
T (°C)
J
20
30
40
I
SD
100
Figure 15.
Typical switching energy vs gate resistance
AM05585v1
(μJ)
I
D
=5A
V
DD
=400V
30
20
30
40
10
G
(
Ω
)
DS6117
–
Rev 6
page 7/15
STF12N65M5, STP12N65M5
Test circuits
3
Test circuits
Figure 16.
Test circuit for resistive load switching times
Figure 17.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 19.
Unclamped inductive load test circuit
Figure 18.
Test circuit for inductive load switching and
diode recovery times
A
A
A
L
D
S
100 µH
D
fast
diode
V
D
G
D.U.
T
.
B
2200
3.3
1000
µF
B
3.3
µF
B
µF
V
DD
+
µF
+
V
DD
25 Ω
I
D
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01470v1
AM01471v1
Figure 20.
Unclamped inductive waveform
Figure 21.
Switching time waveform
I
D
V
DS
V
(BR)DSS
90%I
D
90%V
DS
V
D
I
DM
V
GS
90%V
GS
10%V
DS
I
D
V
DD
V
DD
10%I
D
t
r
t
f
V
DS
I
D
t
d(V)
t
c(off)
AM05540v2
AM01472v1
DS6117
–
Rev 6
page 8/15
STF12N65M5, STP12N65M5
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
TO-220FP package information
Figure 22.
TO-220FP package outline
7012510_Rev_13_B
DS6117
–
Rev 6
page 9/15
STF12N65M5, STP12N65M5
TO-220FP package information
Table 7.
TO-220FP package mechanical data
mm
Dim.
Min.
4.40
2.50
2.50
0.45
0.75
1.15
1.15
4.95
2.40
10.00
Typ.
Max.
4.60
2.70
2.75
0.70
1.00
1.70
1.70
5.20
2.70
10.40
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
16.00
28.60
9.80
2.90
15.90
9.00
3.00
30.60
10.60
3.60
16.40
9.30
3.20
DS6117
–
Rev 6
page 10/15
STF12N65M5, STP12N65M5
TO-220 type A package information
4.2
TO-220 type A package information
Figure 23.
TO-220 type A package outline
0015988_typeA_Rev_23
DS6117
–
Rev 6
page 11/15
STF12N65M5, STP12N65M5
TO-220 type A package information
Table 8.
TO-220 type A package mechanical data
mm
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
Typ.
Max.
4.60
0.88
1.55
0.70
15.75
A
b
b1
c
D
D1
1.27
E
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
e
e1
F
H1
J1
L
L1
L20
16.40
28.90
L30
øP
Q
3.75
2.65
3.85
2.95
0.10
Slug flatness
0.03
DS6117
–
Rev 6
page 12/15
STF12N65M5, STP12N65M5
Revision history
Table 9.
Document revision history
Changes
Date
Version
24-Feb-2009
1
2
3
First release.
Corrected package information on first page.
27-Feb-2009
21-Jan-2010
Document status promoted from preliminary data to datasheet.
–
Figure 15: Normalized on resistance vs temperature
has been updated.
29-Jun-2010
22-Jun-2011
4
5
– V
value in
T
a
ble 4
has been corrected.
GS
Updated
Figure 18
and
Figure 20
.
Updated gate charge in
Table 5
and switching time in
T
a
ble 6
.
The part numbers STD12N65M5, STI12N65M5 and STU12N65M5 have been removed and
the document has been updated accordingly.
11-Mar-2022
6
g
Minor text changes.
DS6117
–
Rev 6
page 13/15
STF12N65M5, STP12N65M5
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
9
TO-220FP package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
TO-220 type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
DS6117
–
Rev 6
page 14/15
STF12N65M5, STP12N65M5
IMPORTANT NOTICE – READ CAREFULLY
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T
.
F
or additional information about ST trademarks, refer to
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. All other product or service names
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2022 STMicroelectronics – All rights reserved
DS6117
–
Rev 6
page 15/15
