STMicroelectronics-STP13N60DM2
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STP13N60DM2
Datasheet
N-channel 600
V
,
0
.310 Ω typ., 11 A MDmesh™ DM2
Power MOSFET in a TO-220 package
Features
V
R
max.
I
D
Order code
DS
DS(on )
TAB
STP13N60DM2
600 V
0.365 Ω
11 A
•
•
•
•
•
•
Fast-recovery body diode
3
2
Extremely low gate charge and input capacitance
Low on-resistance
1
TO-220
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
D(2, TAB)
Applications
G(1)
•
Switching applications
Description
S(3)
AM01475V1
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-
recovery diode series. It offers very low recovery charge (Q
rr
) and time (t
rr
) combined
with low R
DS(on)
, rendering it suitable for the most demanding high-efficiency
converters and ideal for bridge topologies and ZVS phase-shift converters.
Product status
Product summary
Order code
Marking
STP13N60DM2
13N60DM2
TO-220
Package
Packing
Tube
DS12837
–
Rev 1
–
November 2018
For further information contact your local STMicroelectronics sales office.
STP13N60DM2
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
Gate-source voltage
±25
11
V
GS
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
= 25 °C
case
case
I
A
D
= 100 °C
7
I
44
110
40
50
A
DM
P
TOT
T
o
tal power dissipation at T
= 25 °C
case
W
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
V/ns
°C
T
stg
-55 to 150
T
Operating junction temperature range
j
1. Pulse
width limited by safe operating area.
2.
3.
I
≤ 11 A, di/dt ≤ 900 A/μs; V
< V
, V
=400 V.
(BR)DSS DD
SD
DS peak
V
≤ 480 V.
DS
Table 2.
Thermal data
Parameter
Symbol
Value
1.14
Unit
R
thj-case
Thermal resistance junction-case
Thermal resistance junction-amb
°C/W
R
thj-amb
62.5
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not repetitive
I
2.5
A
AR
(pulse width limited by T
)
jmax
Single pulse avalanche energy (starting T
= 25 °C, I
= I
,
AR
j
D
E
340
mJ
AS
V
= 50 V)
DD
DS12837
–
Rev 1
page 2/13
STP13N60DM2
Electrical characteristics
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 4.
Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
V
V
= 0
V
, I
= 1
m
A
600
V
(BR)DSS
GS
D
V
V
T
= 0
V
, V
=
6
00 V
1.5
GS
DS
I
= 0
V
, V
=
6
00 V,
Zero gate voltage drain current
µA
DSS
GS
DS
100
case
I
V
= 0
V
, V
=
±
25 V
GS
Gate-body leakage current
Gate threshold voltage
±10
5
µA
V
GSS
DS
DS
V
V
V
= V
, I
= 250 µA
3
4
GS(th)
GS
D
Static drain-source
on-resistance
R
DS(on)
= 10
V
, I
=
5
.5 A
D
0.310 0.365
Ω
GS
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ.
730
38
Max.
Unit
C
iss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
C
oss
V
V
= 100
V
, f = 1
M
Hz, V
= 0 V
Output capacitance
pF
DS
GS
C
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
0.9
70
rss
= 0 to 480
V
, V
= 0 V
C
oss eq.
pF
Ω
DS
GS
R
f = 1 MHz, I
= 0 A
D
5.1
19
G
Q
g
V
= 480
V
, I
= 11 A, V
= 0 to 10 V
D GS
DD
Q
Gate-source charge
4.4
9.9
nC
gs
Q
Gate-drain charge
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Min.
Typ.
12.3
4.8
Max.
Unit
t
–
–
–
–
–
–
–
–
d(on)
V
V
= 300
V
, I
=
5
.5 A R
= 4.7 Ω,
D G
DD
t
Rise time
r
GS
ns
t
Turn-off delay time
Fall time
42.5
10.6
d(off)
t
f
DS12837
–
Rev 1
page 3/13
STP13N60DM2
Electrical characteristics
Table 7.
Source-drain diode
Test conditions
Symbol
Parameter
Source-drain current
Min.
Typ.
Max.
11
Unit
A
I
–
–
–
–
–
–
–
–
–
SD
I
Source-drain current (pulsed)
Forward on voltage
44
A
SDM
V
V
= 0
V
, I
= 11 A
SD
1.6
V
GS
SD
t
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
90
252
5.6
ns
nC
A
rr
I
= 11 A, di/dt = 100 A/µs, V
= 60 V
DD
SD
Q
rr
I
RRM
t
170
667
8.6
ns
nC
A
rr
I
= 11 A, di/dt = 100 A/µs, V
= 60 V,
DD
SD
j
Q
rr
I
RRM
1. Pulse
width is limited by safe operating area.
2. Pulse
test: pulse duration = 300 µs, duty cycle 1.5%.
Table 8.
Gate-source Zener diode
Symbol
Parameter
Test conditions
= ±250 μA, I
= 0 A
Min.
Typ.
Max.
Unit
V
I
GS
Gate-source breakdown voltage
±30
–
–
V
(BR)GSO
D
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need for
additional external componentry.
DS12837
–
Rev 1
page 4/13
STP13N60DM2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
GIPG131120181354SOA
I
D
Operation in this area
(A)
by R
DS(on)
is limited
t
p
=1 µs
10
1
t
p
=10 µs
t
p
=100 µs
T
J
≤
150 °C
T
C
=25 °C
t
p
=1 ms
10
0
V
GS
=10 V
t
p
=10 ms
single pulse
10
1
10
2
10
-1
10
-1
10
0
V
DS
(V)
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
GIPG070420161613OCH
GIPG070420161613TCH
I
D
I
D
(A)
(A)
V
GS
= 8, 9, 10 V
25
25
V
DS
= 20 V
20
15
10
20
15
10
V
GS
= 7 V
V
GS
= 6 V
5
0
5
0
V
GS
= 5 V
16
0
4
8
12
V
DS
(V)
0
2
4
6
8
10
V
GS
(V)
Figure 5.
Gate charge vs gate-source voltage
Figure 6.
Static drain-source on-resistance
GIPG070420161614QVG
GIPG070420161610RID
V
GS
(V)
V
DS
(V)
R
DS(on)
(Ω)
12
10
8
600
500
400
300
200
100
V
DD
= 480 V
I
D
= 11 A
0.33
V
DS
V
GS
=10 V
0.32
0.31
6
4
0.3
2
0
0
0.29
0
4
8
12
16
20
Q
g
(nC)
0
2
4
6
8
10
I
D
(A)
DS12837
–
Rev 1
page 5/13
STP13N60DM2
Electrical characteristics (curves)
Figure 8.
Normalized gate threshold voltage vs
temperature
Figure 7.
Capacitance variations
GIPG070420161612CVR
C
(pF)
GIPG060420161230VTH
V
GS(th)
(norm.)
10
3
1.1
C
ISS
I
D
= 250 µA
1.0
0.9
0.8
10
2
10
1
C
OSS
C
RSS
f = 1 MHz
10
0
0.7
0.6
10
-1
10
-1
10
0
10
1
10
2
V
DS
(V)
-75
-25
25
75
125
T
j
(°C)
Figure 10.
Normalized V
(BR)DSS
vs temperature
Figure 9.
Normalized on-resistance vs temperature
GIPG070420161233RON
R
DS(on)
(norm.)
GIPG060420161354BDV
V
(BR)DSS
(norm.)
2.2
1.08
1.04
1.00
0.96
V
GS
= 10 V
I
D
= 1 mA
1.8
1.4
1.0
0.6
0.2
0.92
0.88
-75
-25
25
75
125
T
j
(°C)
-75
-25
25
75
125
T
j
(°C)
Figure 11.
Output capacitance stored energy
Figure 12.
Source- drain diode forward characteristics
GIPG070420161614EOS
GIPG070420161612SDF
E
OSS
V
SD
(µJ)
(V)
1.1
5
T
j
= -50 °C
1.0
4
3
2
0.9
T
j
= 25 °C
0.8
0.7
T
j
= 150 °C
1
0
0.6
0.5
0
100 200 300 400 500 600
V
DS
(V)
0
2
4
6
8
10
I
SD
(A)
DS12837
–
Rev 1
page 6/13
STP13N60DM2
Test circuits
3
Test circuits
Figure 13.
Test circuit for resistive load switching times
Figure 14.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 15.
Test circuit for inductive load switching and
diode recovery times
Figure 16.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
I
D
25 Ω
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 18.
Switching time waveform
Figure 17.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DS12837
–
Rev 1
page 7/13
STP13N60DM2
Package information
4
Package information
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
DS12837
–
Rev 1
page 8/13
STP13N60DM2
TO-220 type A package information
4.1
TO-220 type A package information
Figure 19.
TO-220 type A package outline
0015988_typeA_Rev_22
DS12837
–
Rev 1
page 9/13
STP13N60DM2
TO-220 type A package information
Table 9.
TO-220 type A package mechanical data
mm
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
Typ.
Max.
4.60
0.88
1.55
0.70
15.75
A
b
b1
c
D
D1
E
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
16.40
28.90
3.75
2.65
3.85
2.95
DS12837
–
Rev 1
page 10/13
STP13N60DM2
Revision history
Table 10.
Document revision history
Date
14-Nov-2018
Revision
Changes
1
First release.
DS12837
–
Rev 1
page 11/13
STP13N60DM2
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
TO-220 type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
DS12837
–
Rev 1
page 12/13
STP13N60DM2
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DS12837
–
Rev 1
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