STMicroelectronics-STP14NF10
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STP14NF10
N-channel 100 V – 0.115
Ω
– 15 A – TO-220
low gate charge S
T
r
ipFET™ II Power MOSFET
Features
Type
V
DSS
R
DS(on)
max
100 V
< 0.13
Ω
I
D
STP14NF10
15 A
■
Exceptional dv/dt capability
■
100% avalanche tested
3
2
1
■
Application oriented characterization
TO-220
Application
■
Switching applications
Description
This Power MOSFET series realized with
Figure 1.
Internal schematic diagram
STMicroelectronics unique S
T
r
ipFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficienc
y
,
h
igh-frequency isolated DC-DC
converters for telecom and computer applications.
It is also intended for any applications with low
gate drive requirements.
Table 1.
Order code
STP14NF10
Device summary
Marking
Package
TO-220
Packaging
P14NF10
T
u
be
April 2008
Rev 4
1/12
12
Contents
STP14NF10
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STP14NF10
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
DS
V
GS
I
D
Drain-source voltage (V
GS
= 0)
Gate- source voltage
100
20
15
10
60
60
0.4
9
V
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
A
I
D
A
(1)
I
DM
P
tot
A
T
o
tal dissipation at T
C
= 25 °C
Derating factor
W
W/°C
V/ns
mJ
dv/dt
(2)
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
(3)
E
AS
70
T
stg
T
j
-55 to 175
175
°C
°C
Max. operating junction temperature
1. Pulse
width limited by safe operating area.
2. I
SD
≤
14A, di/dt
≤
300A/µs, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
3. Starting
T
j
= 25 °C, I
D
= 15A, V
DD
= 50V
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
R
thj-case
R
thj-amb
T
J
Thermal resistance junction-case max
2.5
62.5
300
°C/W
°C/W
°C
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
3/12
Electrical characteristics
STP14NF10
2
Electrical characteristics
(T
=25 °C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source
V
(BR)DSS
I
D
= 250 µA, V
GS
=0
100
V
breakdown voltage
V
DS
= max ratings
Zero gate voltage
1
µA
µA
I
DSS
V
DS
= max ratings,
T
C
= 125 °C
drain current (V
GS
= 0)
10
Gate-body leakage
current (V
DS
= 0)
I
GSS
V
GS
V
DS
= V
GS
, I
D
= 250 µA
GS
= 10
V
,
I
D
= 7 A
=
20 V
100
4
nA
V
V
GS(th)
R
DS(on)
Gate threshold voltage
2
3
Static drain-source on
resistance
V
0.115
0.13
Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Forward
transconductance
(1)
g
fs
V
DS
= 15
V
,
I
D
= 7 A
20
S
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
460
70
pF
pF
pF
V
DS
= 25
V
, f = 1
M
Hz,
V
GS
= 0
Reverse transfer
capacitance
30
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
16
25
32
8
ns
ns
ns
ns
V
DD
= 50
V
,
I
D
= 7 A
R
G
= 4.7
Ω
V
GS
= 10 V
T
u
rn-off delay time
Fall time
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 80
V
,
I
D
= 12 A,
V
GS
= 10 V
15.5
3.7
21
nC
nC
nC
4.7
1. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5%.
4/12
STP14NF10
Electrical characteristics
Table 6.
Symbol
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
I
SD
15
60
A
A
Source-drain current
(pulsed)
(1)
I
SDM
(2)
V
SD
Forward on voltage
I
SD
= 14 A, V
GS
= 0
1.5
V
I
SD
= 14 A,
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
90
230
5
ns
nC
A
di/dt = 100 A/µs,
V
DD
= 50
V
,
T
j
= 150 °C
Q
rr
I
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5%
5/12
Electrical characteristics
STP14NF10
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
6/12
STP14NF10
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage
Figure 9.
Capacitance variations
Figure 10.
Normalized gate threshold voltage
Figure 11.
Normalized on resistance vs
vs temperature
temperature
Figure 12.
Source-drain diode forward
characteristics
Figure 13.
Normalized B
vs temperature
VDSS
7/12
Test circuits
STP14NF10
3
Test circuits
Figure 14.
Switching times test circuit for
resistive load
Figure 15.
Gate charge test circuit
Figure 16.
Test circuit for inductive load
switching and diode recovery times
Figure 17.
Unclamped Inductive load test
circuit
Figure 18.
Unclamped inductive waveform
Figure 19.
Switching time waveform
8/12
STP14NF10
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
9/12
Package mechanical data
STP14NF10
TO-220 mechanical data
mm
inch
Typ
Dim
Min
Typ
Max
Min
Max
A
b
4.40
0.61
1.14
0.4
8
15.25
4.60
0.
88
1.70
0.70
15.75
0.17
3
0.024
0.044
0.01
9
0.6
0.1
8
1
0.0
3
4
0.066
0.027
0.62
b
1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.
3
2
6.60
2.72
14
0.
393
0.0
9
4
0.1
9
4
0.04
8
0.244
0.0
9
4
0.511
0.1
3
7
0.40
9
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.
9
5
1.2
3
6.20
2.40
1
3
e1
F
H1
J1
L
L1
L20
L
3
0
∅
P
Q
3
.50
3
.
93
16.40
0.645
2
8
.
9
0
1.1
3
7
3
.75
3
.
8
5
2.
9
5
0.147
0.104
0.151
0.116
2.65
10/12
STP14NF10
Revision history
5
Revision history
Table 7.
Date
Document revision history
Revision
Changes
05-Feb-2004
21-Jun-2004
19-Jun-2006
20-Mar-2008
1
2
3
4
First version
Preliminary version
New template, no content change
Removed packages: D²
P
A
K and TO-220FP
11/12
STP14NF10
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