STMicroelectronics-STP14NF12FP
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STP14NF12
STP14NF12FP
N-CHANNEL 120V – 0.16
Ω
– 14A TO-220/TO-220FP
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
V
DSS
R
I
D
DS(on)
STP14NF12
STP14NF12FP
120 V
120 V
< 0.18
Ω
< 0.18
Ω
14 A
14 A
■
■
■
TYPICAL R
(on) = 0.16
Ω
DS
EXCEPTIONAL dv/dt CAPABILITY
APPLICATION ORIENTED
CHARACTERIZATION
3
3
2
2
1
1
TO-220
TO-220FP
DESCRIPTION
This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for
T
e
lecom and Computer application. It
is also intended for any application with low gate
charge drive requirements
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HIGH-EFFICIENCY DC-DC CONVERTERS
■
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP14NF12 STP14NF12FP
Unit
V
Drain-source Voltage (V
= 0)
120
120
±20
V
V
DS
GS
V
Drain-gate Voltage (R
= 20 k
Ω
)
DGR
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuous) at T
= 25°C
14
9
8.5
6
A
D
C
I
Drain Current (continuous) at T
= 100°C
A
D
C
I
( )
Drain Current (pulsed)
56
60
0.4
34
A
DM
P
Total Dissipation at T
= 25°C
25
W
TOT
C
Derating Factor
0.17
W/°C
V/ns
mJ
V
dv/dt (1)
(2)
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Operating Junction
T
e
mperature
Storage
T
e
mperature
9
E
60
AS
V
–
2500
ISO
T
j
-55 to 175
°C
T
stg
(1) I
≤
14A, di/dt
≤
300A/µs, V
≤
V
, T
≤
T
j JMAX.
SD
DD
(BR)DSS
(
●
) Pulse width limited by safe operating area
(2) Starting T
= 25°C, I
= 14A, V
= 50V
j
D
DD
August 2002
1/9
STP14NF12/STP14NF12FP
THERMAL DATA
TO-220
TO-220FP
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
2.5
6
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
62.5
300
T
Maximum Lead
T
emperature For Soldering Purpose
l
ELECTRICAL CHARACTERISTICS
(T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
T
y
p.
Max.
Unit
V
I
= 250 µA, V
= 0
120
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
DS
1
µA
µA
nA
DSS
Drain Current (V
= 0)
GS
= Max Rating, T
= 125 °C
10
DS
GS
C
I
Gate-body Leakage
= ±20V
±100
GSS
Current (V
= 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
T
y
p.
3
Max.
4
Unit
V
V
R
V
V
= V
, I
= 250µA
Gate Threshold Voltage
2
GS(th)
DS
GS
GS
D
Static Drain-source On
Resistance
= 10
V
, I
= 7 A
0.16
0.18
Ω
DS(on)
D
DYNAMIC
Symbol
Parameter
Forward Transconductance
Input Capacitance
Test Conditions
Min.
T
y
p.
4
Max.
Unit
S
g
(1)
V
= 15V
I =
7 A
DS ,
D
fs
C
C
V
= 25V, f = 1 MHz, V
= 0
DS GS
460
70
pF
pF
pF
iss
Output Capacitance
oss
C
rss
Reverse Transfer
Capacitance
30
2/9
STP14NF12/STP14NF12FP
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 50 V, I
= 7 A
Turn-on Delay Time
16
ns
d(on)
DD
D
= 4.7
Ω
V =
10V
G
GS
t
Rise Time
25
ns
r
(Resistive Load, see Figure 3)
Q
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
= 80 V, I
= 14 A,
= 10V
15.5
3.7
4.7
21
nC
nC
nC
g
DD
GS
D
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-off-Delay Time
Fall Time
V
= 50 V, I
= 7 A,
32
8
ns
ns
d(off)
DD
D
t
f
R =
4.7
Ω,
V =
10V
G GS
(Resistive Load, see Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
14
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
56
A
SDM
V
I
I
= 14 A, V
= 0
1.5
V
SD
SD
SD
GS
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
92
230
5
ns
nC
A
= 14 A, di/dt = 100A/µs,
= 50 V, T
= 150°C
rr
Q
V
rr
RRM
DD
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse
width limited by safe operating area.
Safe Operating Area For TO-220
Safe Operating Area For TO-220FP
3/9
STP14NF12/STP14NF12FP
Thermal Impedance For TO-220
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
STP14NF12/STP14NF12FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
5/9
STP14NF12/STP14NF12FP
Fig. 1:
Unclamped Inductive Load Test Circuit
Fig. 2:
Unclamped Inductive Waveform
Fig. 3:
Switching Times Test Circuit For
Fig. 4:
Gate Charge test Circuit
Resistive Load
Fig. 5:
Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STP14NF12/STP14NF12FP
TO-220 MECHANICAL DATA
mm.
inch
DIM.
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10
TYP
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
MIN.
TYP.
MAX.
0.181
0.051
0.107
0.027
0.034
0.066
0.066
0.202
0.106
0.409
0.173
A
C
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
D
E
F
F1
F2
G
G1
H2
L2
L3
L4
L5
L6
L7
L9
DIA
16.40
28.90
0.645
1.137
13
14
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.259
0.154
0.151
2.65
15.25
6.20
3.50
3.75
2.95
15.75
6.60
3.93
3.85
1
7/9
TO-220FP MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
4.4
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1 2 3
L4
L5
L2
STP14NF12/STP14NF12FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
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