STMicroelectronics-STP150N10F7AG
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STP150N10F7AG
Datasheet
Automotive N-channel 100
V
,
4
.2 mΩ typ., 110 A, STripFET F7
Power MOSFET in a TO-220 package
Features
V
R
DS(on)
max.
I
D
Order code
DS
TAB
STP150N10F7AG
100 V
4.2 mΩ
110 A
3
2
•
•
•
•
Designed for automotive application
Standard level V
GS(TH)
1
TO-220
175°C junction temperature
100% avalanche rated
D(2, TAB)
Applications
•
Switching applications
G(1)
Description
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced
trench gate structure that results in very low on-state resistance, while also reducing
internal capacitance and gate charge for faster and more efficient switching.
S(3)
AM01475v1_noZen
Product status link
Product summary
Order code
Marking
STP150N10F7AG
150N10F7AG
TO-220
Package
Packing
Tube
DS13798
–
Rev 1
–
July 2021
For further information contact your local STMicroelectronics sales office.
STP150N10F7AG
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
100
Unit
V
V
Drain-source voltage
Gate-source voltage
DS
GS
V
±20
V
Drain current (continuous) at T
= 25 °C
C
I
D
110
A
Drain current (continuous) at T
= 100 °C
C
I
Drain current (pulsed)
440
250
A
DM
P
T
o
tal power dissipation at T
= 25 °C
W
TOT
C
Single pulse avalanche current (pulse width limited by maximum junction
temperature)
I
AV
30
A
Single pulse avalanche energy
E
650
mJ
AS
(T =
25 °C, I
= I
, V
= 25 V)
J
D
AV
DD
T
Operating junction temperature range
Storage temperature range
J
-55 to 175
°C
T
stg
1. Current
limited by package.
2. Pulse
width limited by safe operating area.
Table 2.
Thermal data
Parameter
Symbol
Value
0.6
Unit
°C/W
°C/W
R
thJC
Thermal resistance, junction-to-case
Thermal resistance, junction-to-board
1. When
mounted on 1 inch² FR-4, 2 Oz copper board.
R
62.5
thJB
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STP150N10F7AG
Electrical characteristics
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 3.
On/off-state
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
V
V
= 0
V
, I
=
2
50 µA
100
V
(BR)DSS
GS
D
I
V
V
V
= 0
V
, V
=
m
ax ratings
Zero gate voltage drain current
Gate body leakage current
Gate threshold voltage
1
µA
nA
V
DSS
GS
DS
DS
DS
I
= 0
V
, V
=
±
20 V
100
4.5
GSS
GS
V
= V
, I
= 250 µA
2.5
3.5
3.6
GS(th)
GS
D
Static drain-source on-
resistance
R
DS(on)
V
= 10 V, I
= 55 A
GS D
4.2
mΩ
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Input
capacitance
C
iss
9000
pF
Output
capacitance
V
V
= 50 V, f = 1 MHz,
DS
C
2000
80
pF
pF
oss
–
–
= 0 V
GS
Reverse
transfer
C
rss
capacitance
T
o
tal gate
charge
Q
–
–
–
127
56
–
–
–
nC
nC
nC
g
V
= 50
V
, I
= 110 A, V
= 10 V
D GS
DD
Gate-source
charge
Q
gs
Gate-drain
charge
Q
gd
32
Table 5.
Switching times
Test conditions
Symbol
Parameter
Min.
Typ.
37
Max.
Unit
ns
Turn-on
delay time
t
–
–
–
–
–
–
–
–
d(on)
V
R
= 50
V
, I
=
5
5 A,
DD
D
= 4.7 mΩ, V
= 10 V
t
r
Rise time
54
ns
G
GS
Turn-off
delay time
t
68
ns
d(off)
t
Fall time
33
ns
f
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STP150N10F7AG
Electrical characteristics
Table 6.
Source-drain diode
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
Forward on
voltage
V
I
I
= 110 A, V
= 0
GS
–
1.2
V
SD
SD
SD
Reverse
recovery time
t
–
–
60
83
–
–
ns
rr
= 110 A,
Reverse
recovery
charge
di/dt = 100 A/µs,
Q
rr
nC
V
DD
j
Reverse
recovery
current
I
–
2.75
–
A
RRM
1. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%.
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–
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STP150N10F7AG
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 2.
Thermal impedance
Figure 1.
Safe operating area
GADG270720210943ZTH
AM18051v1
K
I
D
(A)
0.2
0.1
100
10
0.05
10
-1
100 µs
1 ms
0.02
1
0.01
Single pulse
Z
t
h
= k*
R
thj-c
δ = t
p
/
Ƭ
Tj=175 °C
10 ms
T
c
=25 °C
Single pulse
t
0.1
0.1
p
Ƭ
10
-2
10
-5
1
V
D
S
(V)
10
10
-4
10
-3
10
-2
10
-1
t
p
(s)
Figure 3.
Typical output characteristics
Figure 4.
Typical transfer characteristics
I
D
(A)
110
GADG270720211229OCH
GADG270720210946TCH
I
D
(A)
T
C
=175°C
V
GS
= 7, 10 V
100
90
80
70
60
50
200
150
100
40
T
C
=25°C
6 V
30
50
0
20
10
0
0
V
GS
= 4, 5 V
2.5
T
C
=-55°C
V
GS
(V)
0.5
1
1.5
2
3
3.5 V
DS
(V)
0
1
2
3
4
5
6
7
Figure 5.
Typical gate charge characteristics
Figure 6.
Typical drain-source on-resistance
R
DS(on)
GADG270720210945RID
GADG270720210940QVG
V
GS
(mΩ)
(V)
9
12
V
DS
=50V
8
7
6
5
4
3
2
I
D
=110A
10
8
6
4
V
GS
=10V
2
0
1
0
0
0
20 40 60 80
100 120 140 160 180
Q
g
(nC)
I (A)
160
D
20 40
60 80
100 120 140
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STP150N10F7AG
Electrical characteristics (curves)
Figure 8.
Normalized gate threshold voltage vs
temperature
Figure 7.
Typical capacitance characteristics
GADG270720210942CVR
C
(pF)
GADG270720210944VTH
V
GS(th)
(norm.)
1.15
10
4
10
3
C
ISS
1.05
0.95
0.85
C
OSS
0.75
I
D
= 250 µA
10
2
10
1
0.65
C
RSS
0.55
0.45
0
20
40
60
80
100
V
DS
(V)
-75
-25
25
75
125
175 T
j
(°C)
Figure 10.
Normalized V
(BR)DSS
vs temperature
Figure 9.
Normalized on-resistance vs temperature
GADG270720210943RON
R
DS(on)
(norm.)
GADG270720210944BDV
V
(BR)DSS
(norm.)
1.08
2.0
1.06
1.04
1.02
1.00
0.98
0.96
0.94
1.8
I
D
= 250 µA
V
GS
= 10 V
I
D
= 55 A
1.6
1.4
1.2
1.0
0.8
0.6
0.92
0.90
-75
-25
25
75
125 175
T
j
(°C)
-75
-25
25
75
125 175
T
j
(°C)
Figure 11.
Source-drain diode forward characteristics
ADG270720210900MT
V
SD
(V)
T
J
=-55°C
1.0
T
J
=25°C
0.8
0.6
T
J
=175°C
0.4
0.2
0
0
20 40 60 80
100 120 140
I
SD
(A)
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–
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STP150N10F7AG
Test circuits
3
Test circuits
Figure 12.
Test circuit for resistive load switching times
Figure 13.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 14.
Test circuit for inductive load switching and
diode recovery times
Figure 15.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
25 Ω
I
D
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 17.
Switching time waveform
Figure 16.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
I
D
0
0
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
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STP150N10F7AG
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
TO-220 type A package information
Figure 18.
TO-220 type A package outline
0015988_typeA_Rev_23
DS13798
–
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STP150N10F7AG
TO-220 type A package information
Table 7.
TO-220 type A package mechanical data
mm
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
Typ.
Max.
4.60
0.88
1.55
0.70
15.75
A
b
b1
c
D
D1
1.27
E
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
e
e1
F
H1
J1
L
L1
L20
16.40
28.90
L30
øP
Q
3.75
2.65
3.85
2.95
0.10
Slug flatness
0.03
DS13798
–
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STP150N10F7AG
Revision history
Table 8.
Document revision history
Changes
Date
Version
27-Jul-2021
1
First release
DS13798
–
Rev 1
page 10/12
STP150N10F7AG
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
TO-220 type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
DS13798
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STP150N10F7AG
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DS13798
–
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