STMicroelectronics-STP150N3LLH6
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STD150N3LLH6
STP150N3LLH6, STU150N3LLH6
N-channel 30
V
,
0
.0024
Ω
, 80 A, D
P
A
K, I
P
A
K, TO-220
S
T
r
ipFET™ VI DeepG
A
T
E™ Power MOSFET
Features
Type
V
DSS
R
DS(on)
max
I
D
STD150N3LLH6
STP150N3LLH6
S
T
u
150N3LLH6
30 V
30 V
30 V
0.0028
Ω
0.0033
Ω
0.0033
Ω
80 A
80 A
80 A
3
3
2
1
1
IPAK
DPAK
■
R
* Q
industry benchmark
g
DS(on)
■
Extremely low on-resistance R
■
High avalanche ruggedness
■
Low gate drive power losses
DS(on)
3
2
1
TO-220
Application
■
Switching applications
Figure 1.
Internal schematic diagram
Description
$ ꢄ
4
!
” OR ꢅꢆ
This product utilizes the 6th generation of design
rules of
ST’s proprietary S
T
r
ipFET™ technolog
y
,
with a new
gate structure.The resulting Power
MOSFET exhibits the lowest R
packages.
in all
DS(on)
‘ꢄꢁꢆ
3ꢄꢇꢆ
!-ꢀꢁꢂꢃꢂVꢁ
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STD150N3LLH6
STP150N3LLH6
STU150N3LLH6
150N3LLH6
150N3LLH6
150N3LLH6
D
P
A
K
TO-220
I
P
A
K
T
a
pe and reel
T
u
be
T
u
be
September 2009
Doc ID 15227 Rev 3
1/16
16
Contents
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
Doc ID 15227 Rev 3
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Gate-source voltage
Value
30
Unit
V
V
DS
V
GS
20
V
(1)
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
80
A
I
D
I
D
80
A
(2)
Drain current (pulsed)
320
A
I
DM
P
TOT
T
o
tal dissipation at T
C
= 25 °C
Derating factor
110
0.73
525
W
W/°C
mJ
(3)
Single pulse avalanche energy
Storage temperature
E
AS
T
stg
T
j
-55 to 175
175
°C
°C
Max. operating junction temperature
1. Limited
by wire bonding
2. Pulse
width limited by safe operating area
3. Starting
Tj = 25°C, I
D
= 40 A, V
DD
= 25 V
Table 3.
Symbol
Thermal resistance
Parameter
Value
1.36
100
Unit
°C/W
°C/W
°C
R
thj-case
R
thj-amb
T
j
Thermal resistance junction-case max
Thermal resistance junction-case max
Maximum lead temperature for soldering purpose
275
Doc ID 15227 Rev 3
3/16
Electrical characteristics
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 4.
Symbol
Static
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source breakdown
Voltage
V
(BR)DSS
I
D
= 250 µA, V
GS
= 0
30
V
V
DS
= 30 V
1
µA
µA
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
V
DS
= 30
V
,
Tc = 125 °C
10
Gate body leakage current
(V
DS
= 0)
I
GSS
V
GS
=
20 V
±
100
nA
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
Gate threshold voltage
1
2.5
V
GS
= 10
V
,
I
D
= 40 A
SMD version
0.0024 0.0028
0.0029 0.0033
0.0034 0.0045
0.0039 0.0049
Ω
Ω
Ω
Ω
V
GS
= 10
V
,
I
D
= 40 A
Static drain-source on
resistance
R
DS(on)
V
GS
= 4.5
V
,
I
D
= 40 A
SMD version
V
GS
= 4.5
V
,
I
D
= 40 A
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min
Typ.
Max. Unit
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
4040
740
pF
V
DS
= 25
V
,
f
=1 MHz,
V
GS
= 0
–
–
–
–
pF
pF
Reverse transfer
capacitance
425
Q
g
Q
gs
Q
gd
V
DD
= 15
V
,
I
D
= 80 A
V
GS
= 4.5 V
T
o
tal gate charge
Gate-source charge
Gate-drain charge
40
nC
nC
nC
–
–
16.3
15.8
f = 1 MHz gate bias
Bias = 0 test signal
level = 20 mV
R
G
Gate input resistance
1.4
Ω
open drain
4/16
Doc ID 15227 Rev 3
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
Electrical characteristics
Table 6.
Symbol
Switching on/off (inductive load)
Parameter Test
conditions
Min. Typ.
Max. Unit
V
DD
= 15
V
,
I
D
= 40 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
t
d(on)
t
r
T
u
rn-on delay time
17
ns
–
–
Rise time
18
ns
V
DD
= 15
V
,
I
D
= 40 A,
t
d(off)
t
f
T
u
rn-off delay time
Fall time
75
ns
R
G
= 4.7
Ω,
V
GS
= 10 V
–
–
46
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ.
Max. Unit
I
SD
Source-drain current
80
A
A
–
–
(1)
Source-drain current (pulsed)
320
I
SDM
(2)
I
SD
= 40 A, V
GS
= 0
I
SD
= 80 A,
Forward on voltage
1.1
V
V
SD
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
34
35
ns
nC
A
di/dt = 100 A/µs,
V
DD
= 24 V
Q
rr
–
2.1
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15227 Rev 3
5/16
Electrical characteristics
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM0
3
997v1
I
D
(A)
100
10
100
µs
1m
s
10m
s
Tj=150°C
Tc=25°C
1
S
inlge
p
u
l
s
e
0.1
10
V
D
S
(V)
0.1
1
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
AM0
3
99
8
v1
AM0
3
999v1
I
D
(A)
I
D
(A)
V
G
S
=10V
3
50
3
00
250
V
D
S
=1V
3
00
250
200
150
100
5V
4V
200
150
100
3
V
50
0
50
0
2
4
V
D
S
(V)
8
10
V
G
S
(V)
0
2
0
4
6
Figure 6.
Normalized BV
vs temperature
Figure 7.
Static drain-source on resistance
DSS
AM0490
3
v1
AM04905v1
R
D
S
(on)
(
Ω
)
4.5
BV
D
SS
(norm)
V
G
S
=10V
1.06
1.04
1.02
1.00
0.9
8
4.0
I
D=
250
µ
A
3
.5
3
.0
2.5
2.0
1.5
1.0
0.96
0.94
0.5
0.0
60
8
0
20
40
-50
T
J
(°C)
I
D
(A)
0
50
0
100
150
6/16
Doc ID 15227 Rev 3
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage
Figure 9.
Capacitance variations
AM04000v1
AM00
8
9
3
v1
V
G
S
C
(V)
(pF)
V
DD
=15V
f=1MHz
12
10
8
I
D
=
8
0A
6100
4600
Ci
ss
6
3
100
1600
100
4
2
0
Co
ss
Cr
ss
25
20
40
8
0
0
15
100
Q
g
(nC)
V
D
S
(V)
0
20
60
5
10
Figure 10.
Normalized gate threshold voltage
Figure 11.
Normalized on resistance vs
vs temperature
temperature
AM04901v1
AM04902v1
V
G
S
(th)
R
D
S
(on)
(norm)
(norm)
I
D=
250
µ
A
I
D=
40A
1.6
1.1
V
G
S
=
10V
1.4
1.2
1.0
0.
8
1.0
0.
8
0.6
0.4
0.6
0.4
0.2
0.2
0
-50
-50
-25
T
J
(°C)
25
75
T
J
(°C)
0
50
150
0
50
100
100
Figure 12.
Source-drain diode forward
characteristics
AM04906v1
V
S
D
(V)
T
J
=-50°C
1.0
0.9
0.
8
T
J
=25°C
0.7
0.6
T
J
=175°C
0.5
0.4
0
20
40
60
8
0
I
S
D
(A)
Doc ID 15227 Rev 3
7/16
Test circuit
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
3
Test circuit
Figure 13.
Switching times test circuit for
resistive load
Figure 14.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
µ
F
R
L
µ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
D
R
G
V
G
S
2200
µ
F
D.U.
T
.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 15.
Test circuit for inductive load
switching and diode recovery times
Figure 16.
Unclamped Inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
µ
H
V
D
G
2200
µ
F
D.U.
T
.
B
3
.
3
µ
F
V
DD
S
3
.
3
µ
F
1000
µ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 17.
Unclamped inductive waveform
Figure 18.
Switching time waveform
t
on
td
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
8/16
Doc ID 15227 Rev 3
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
Figure 19.
Gate charge waveform
Test circuit
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Doc ID 15227 Rev 3
9/16
Package mechanical data
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
is an ST trademark.
10/16
Doc ID 15227 Rev 3
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
Package mechanical data
TO-251 (IPAK) mechanical data
mm.
typ
DIM.
min.
2.20
0.
9
0
0.64
max.
2.40
1.10
0.
9
0
0.
9
5
5.40
0.60
0.60
6.20
6.60
A
A1
b
b
2
b
4
c
5.20
0.45
0.4
8
6.00
6.40
c2
D
E
e
2.2
8
e1
H
4.40
4.60
16.10
L
9
.00
0.
8
0
9
.40
(L1)
L2
V1
1.20
0.
8
0
10
o
006
8
771_H
Doc ID 15227 Rev 3
11/16
Package mechanical data
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
TO-252 (DPAK) mechanical data
mm.
typ
DIM.
min.
2.20
0.
9
0
0.0
3
0.64
5.20
0.45
0.4
8
6.00
max.
2.40
1.10
0.2
3
0.
9
0
5.40
0.60
0.60
6.20
A
A1
A2
b
b
4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.2
8
e1
H
4.40
9
.
3
5
1
4.60
10.10
L
L1
L2
L4
R
2.
8
0
0.
8
0
0.60
0
o
1
0.20
8
o
V2
006
8
772_G
12/16
Doc ID 15227 Rev 3
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
Package mechanical data
TO-220 mechanical data
mm
Typ
inch
Dim
Min
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.4
8
15.25
4.60
0.
88
1.70
0.70
15.75
0.17
3
0.024
0.044
0.019
0.6
0.1
8
1
0.0
3
4
0.066
0.027
0.62
b
1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.
3
2
6.60
2.72
14
0.
3
9
3
0.094
0.194
0.04
8
0.244
0.094
0.511
0.1
3
7
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.2
3
6.20
2.40
1
3
e1
F
H1
J1
L
L1
L20
L
3
0
∅
P
Q
3
.50
3
.9
3
16.40
0.645
2
8
.90
1.1
3
7
3
.75
3
.
8
5
0.147
0.104
0.151
0.116
2.65
2.95
Doc ID 15227 Rev 3
13/16
Packaging mechanical data
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504
0.520
0.795
18.4 0.645
0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267
0.275
10.4 10.6
0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059
0.063
0.059
D1
E
1.65 1.85
0.065 0.073
7.4 7.6
0.291 0.299
2.55 2.75
0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153
0.161
8.1 0.311
0.319
2.1 0.075
0.082
1.574
W
15.7
16.3 0.618
0.641
14/16
Doc ID 15227 Rev 3
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
Revision history
6
Revision history
Table 8.
Date
Document revision history
Revision
Changes
01-Dec-2008
20-Jul-2009
10-Sep-2009
1
First release
– Document status promoted from preliminary data to datasheet
– Added new package, mechanical data: TO-220
2
3
Q
Doc ID 15227 Rev 3
15/16
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
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16/16
Doc ID 15227 Rev 3
