STMicroelectronics-STP150NF04
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STP150NF04
N-channel 40
V
,
0
.005
Ω
typ., 80 A S
T
r
ipFET™II Power MOSFET
in a TO-220 package
Datasheet — production data
Features
R
DS(on)
max
Type
V
DSS
I
D
TAB
STP150NF04
40 V
< 0.007
Ω
80 A
■
100% avalanche tested
■
Standard level gate drive
3
2
1
TO-220
Applications
■
Switching applications
Description
This Power MOSFET has been developed using
STMicroelectronics’ unique S
T
r
ipFET process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer applications,
and applications with low gate charge driving
requirements.
Figure 1.
Internal schematic diagram
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Table 1.
Order code
STP150NF04
Device summary
Marking
Package
TO-220
Packaging
P150NF04
T
u
be
October 2012
Doc ID 14848 Rev 3
1/12
This is information on a product in full production.
12
Contents
STP150NF04
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
Doc ID 14848 Rev 3
STP150NF04
Electrical ratings
1
Electrical ratings
T
a
ble 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
DS
V
GS
Drain-source voltage (V
GS
= 0)
Gate- source voltage
40
20
80
80
320
300
2
V
V
(1)
I
D
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
A
(1)
I
D
A
(2)
I
DM
A
P
tot
T
o
tal dissipation at T
C
= 25 °C
Derating factor
W
W/°C
V/ns
J
dv/dt
(3)
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
2
(4)
E
AS
0.6
T
stg
T
j
-55 to 175
°C
Max. operating junction temperature
1. Current
limited by package
2. Pulse
width limited by safe operating area
3.
I
≤
80A, di/dt
≤
300 A/µs, V
= 80%V
SD
DD
DD
(BR)DSS
4. Starting
Tj = 25 °C, I
= 40 A, V
=30 V
D
Table 3.
Symbol
Thermal resistance
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case max
Thermal resistance junction-pcb max
0.5
35
°C/W
°C/W
(1)
R
thj-pcb
1. When
mounted on 1inch² FR-4 board, 2 oz of Cu
Doc ID 14848 Rev 3
3/12
Electrical characteristics
STP150NF04
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
I
D
= 250 µA, V
GS
= 0
40
V
V
DS
= 40 V
1
µA
µA
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
V
DS
= 40 V @ T
j
= 125 °C
10
Gate-body leakage
current (V
DS
= 0)
I
GSS
V
GS
=
20 V
100
4
nA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS,
I
D
= 250 µA
V
GS
= 10
V
,
I
D
= 40 A
2
Static drain-source on-
resistance
R
DS(on)
0.005 0.007
Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
g
fs
Forward transconductance
V
DS
= 15
V
,
I
D
= 15 A
Input capacitance
–
90
–
S
C
iss
C
oss
C
rss
3650
1145
400
pF
pF
pF
V
DS
= 25
V
, f
=
1 MHz
Output capacitance
–
–
V
GS
=0
Reverse transfer
capacitance
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
118
20
150
nC
nC
nC
V
DD
=32
V
,
I
D
=80 A,
V
GS
=10 V
–
45
1. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5%
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ. Max.
Unit
T
u
rn-on delay time
Rise time
15
150
70
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 25
V
,
I
D
= 40 A
R
G
= 4.7
Ω
, V
GS
= 10 V
–
–
T
u
rn-off delay time
Fall time
45
4/12
Doc ID 14848 Rev 3
STP150NF04
Electrical characteristics
Min. Typ. Max. Unit
T
a
ble 7.
Source drain diode
Parameter
Symbol
Test conditions
I
SD
Source-drain current
–
–
80
A
A
(1)
Source-drain current (pulsed)
I
SD
= 80 A, V
GS
= 0
I
SD
= 80 A, V
GS
= 0
320
I
SDM
ns
nC
A
(2)
Forward on voltage
–
–
1.3
V
SD
I
SD
= 80 A,
di/dt=100 A/µs
DD
= 25
V
,
T
j
= 150 °C
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
73
170
4.6
ns
nC
A
Q
rr
V
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration=300µs, duty cycle 1.5%
Doc ID 14848 Rev 3
5/12
Electrical characteristics
STP150NF04
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
HV42440
T
J
=150°C
I
D
(A)
T
C
=25°C
S
ingle p
u
l
s
e
100
10
1
100
µs
1m
s
10m
s
0.1
0
.
1
1
10
V
D
S
(V)
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
HV42475
HV42470
I
D
(A)
225
200
175
150
125
100
75
I
D
(A)
V
G
S
=10V
V
D
S
=10V
225
200
175
150
125
100
75
6V
5V
50
50
4V
25
25
0
0
0
0
1
2
3
4
5
6
7
8
9
V
D
S
(V)
1
2
3
4
5
6
7
8
9 V
G
S
(V)
Figure 6.
Normalized BV
DSS
vs temperature
Figure 7.
Static drain-source on-resistance
HV424
3
0
R
D
S
(on)
(
Ω)
V
G
S
=10V
7.0
6.5
6.0
5.5
5.0
4.5
4.0
0
10 20
3
0 40 50 60 70
8
0
I
D
(A)
6/12
Doc ID 14848 Rev 3
STP150NF04
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage
Figure 9.
Capacitance variations
HV42420
C(pF)
f=1MHz
9000
8
000
7000
6000
5000
4000
3
000
2000
1000
0
V
G
S
=0
Ci
ss
Co
ss
Cr
ss
5
10
0
20
25
3
0
V
D
S
(V)
15
Figure 10.
Normalized gate threshold voltage
Figure 11.
Normalized on-resistance vs
vs temperature
temperature
HV42410
V
G
S
(th)
(
norm)
V
D
S
=V
G
S
I
D
=250
µ
A
1.00
0.90
0.
8
0
0.70
0.60
-75
25
-50 -25
0
50 75
100 125
150 175
T
J
(°C)
Figure 12.
Source-drain diode forward
characteristics
Doc ID 14848 Rev 3
7/12
Test circuits
STP150NF04
3
Test circuits
Figure 13.
Switching times test circuit for
resistive load
Figure 14.
Gate charge test circuit
Figure 15.
Test circuit for inductive load
switching and diode recovery times
Figure 16.
Unclamped inductive load test
circuit
Figure 17.
Unclamped inductive waveform
8/12
Doc ID 14848 Rev 3
STP150NF04
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
is an ST trademark.
T
a
ble 8.
Dim.
TO-220 type A mechanical data
mm
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
Doc ID 14848 Rev 3
9/12
Package mechanical data
Figure 18.
TO-220 type A drawing
STP150NF04
00159
88
_typeA_Rev_
S
10/12
Doc ID 14848 Rev 3
STP150NF04
Revision history
5
Revision history
Table 9.
Date
Document revision history
Revision
Changes
01-Jul-2008
1
2
First release
Inserted device in TO-220.
25-Sep-2009
Updated title and description on the cover page.
Updated mechanical data.
04-Oct-2012
3
Doc ID 14848 Rev 3
11/12
STP150NF04
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