STMicroelectronics-STP17N62K3
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STF17N62K3
STP17N62K3, STW17N62K3
N-channel 620
V
,
0
.28
Ω
, 15.5 A, TO-220F
P
,
T
O-220, TO-247
SuperMESH3™ Power MOSFET
Features
R
DS(on)
max.
Order codes
V
DSS
I
D
Pw
3
3
2
2
1
STF17N62K3
620 V
< 0.34
Ω
15.5 A
40 W
< 0.34
Ω
15.5 A
190 W
< 0.34
Ω
15.5 A
190 W
1
TO-247
TO-220
STP17N62K3 620
V
STW17N62K3 620
V
■
100% avalanche tested
■
Extremely high dv/dt capability
■
Gate charge minimized
3
2
TO-220FP
1
■
Very low intrinsic capacitance
■
Improved diode reverse recovery
characteristics
■
Zener-protected
Figure 1.
Internal schematic diagram
D(2)
Applications
■
Switching applications
Description
G(1)
This SuperMESH3™ Power MOSFET is the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technolog
y
,
combined with a new optimized vertical structure.
This device boasts an extremely low on-
resistance, superior dynamic performance and
high avalanche capabilit
y
,
r
endering it suitable for
the most demanding applications.
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STF17N62K3
STP17N62K3
STW17N62K3
17N62K3
17N62K3
17N62K3
TO-220FP
TO-220
T
u
be
T
u
be
T
u
be
TO-247
July 2011
Doc ID 15046 Rev 2
1/17
17
Contents
STF17N62K3, STP17N62K3, STW17N62K3
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
Doc ID 15046 Rev 2
STF17N62K3, STP17N62K3, STW17N62K3
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
TO-220
TO-247
TO-220FP
V
DS
V
GS
I
D
Drain-source voltage (V
GS
= 0)
Gate- source voltage
620
30
V
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
15.5
10
15.5
(1)
10
(1)
62
(1)
40
A
A
I
D
(2)
I
DM
62
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
190
W
Avalanche current, repetitive or not-
repetitive
(3)
I
AR
15.5
260
A
(4)
E
AS
Single pulse avalanche energy
Derating factor
mJ
1.52
0.32
W/°C
V/ns
dv/dt
(5)
Peak diode recovery voltage slope
9
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
C
= 25 °C)
V
ISO
2500
V
T
stg
T
j
Storage temperature
-55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited
only by temperature allowed.
2. Pulse
width limited by safe operating area.
3. Pulse
width limited by Tj max.
4. Starting
Tj = 25°C, I
D
= I
AR
, V
DD
= 50V.
5. I
SD
≤
15.5 A, di/dt
≤
400 A/µs, V
DD
= 80% V
(BR)DSS
, V
DS
peak < V
(BR)DSS
.
Table 3.
Symbol
Thermal data
Parameter
TO-220FP
TO-220
TO-247
Unit
°C/W
°C/W
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-ambient max
3.13
0.66
62.5
50
Maximum lead temperature for soldering
purpose
T
l
300
°C
Doc ID 15046 Rev 2
3/17
Electrical characteristics
STF17N62K3, STP17N62K3, STW17N62K3
2
Electrical characteristics
(T =
25 °C unless otherwise specified)
C
Table 4.
Symbol
On /off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source
V
(BR)DSS
breakdown voltage
(V
GS
= 0)
I
D
= 1 mA
DS
= 620 V
620
V
Zero gate voltage
I
DSS
V
1
µA
µA
drain current (V
GS
= 0)
V
DS
= 620
V
,
T
C
=125 °C
50
Gate-body leakage
I
GSS
V
GS
=
20 V
10
µA
V
current (V
DS
= 0)
V
GS(th)
R
DS(on
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100 µA
3
3.75
0.28
4.5
Static drain-source on
V
GS
= 10
V
,
I
D
= 7.5 A
resistance
0.34
Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
C
iss
C
oss
C
rss
3100
200
35
pF
Output capacitance
V
DS
= 50
V
, f = 1
M
Hz, V
GS
= 0
–
–
–
pF
pF
Reverse transfer
capacitance
Equivalent
capacitance time
related
(1)
C
o(tr)
–
140
pF
V
DS
= 0 to 496
V
,
V
GS
= 0
f = 1 MHz open drain
Equivalent
capacitance energy
related
(2)
C
o(er)
–
–
200
2.3
–
–
pF
Intrinsic gate
resistance
R
G
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 496
V
,
I
D
= 15.5 A,
V
GS
= 10 V
105
16
nC
nC
nC
–
–
62
1. C
oss eq.
time related is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
2. C
oss eq.
energy related is defined as a constant equivalent capacitance giving the same stored energy as
C
oss
when V
DS
increases from 0 to 80% V
DSS
4/17
Doc ID 15046 Rev 2
STF17N62K3, STP17N62K3, STW17N62K3
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ.
Max Unit
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
22
29
ns
V
DD
= 310
V
,
I
D
= 7.5 A,
R
G
= 4.7
Ω
,
V
GS
= 10 V
ns
–
–
T
u
rn-off-delay time
Fall time
110
62
ns
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max.
Unit
I
SD
Source-drain current
15.5
62
A
A
–
–
(1)
I
SDM
Source-drain current (pulsed)
(2)
V
SD
Forward on voltage
I
SD
= 15.5 A, V
GS
= 0
1.6
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
380
5000
26
ns
nC
A
I
SD
= 15.5 A, di/dt = 100 A/µs
Q
rr
–
–
I
RRM
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 15.5 A, di/dt = 100 A/µs
V
DD
= 60
V
,
T
j
= 150 °C
450
6500
29
ns
nC
A
Q
rr
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min Typ Max
Unit
30
Gate-source breakdown
voltage
BV
GSO
Igs= 1
mA (open drain)
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capabilit
y
, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrit
y
.
T
hese integrated Zener diodes thus avoid the usage of external components.
Doc ID 15046 Rev 2
5/17
Electrical characteristics
STF17N62K3, STP17N62K3, STW17N62K3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220FP
Figure 3.
Thermal impedance for TO-220FP
Thermal impedance for TO-220
Thermal impedance for TO-247
AM10
3
42v1
I
D
(A)
10
µs
10
100
µs
1m
s
1
10m
s
0.1
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
Figure 4.
Safe operating area for TO-220
Figure 5.
AM10
3
41v1
I
D
(A)
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
10
µs
100
µs
1m
s
10
10m
s
1
0.1
10
V
D
S
(V)
0.1
1
100
Figure 6.
Safe operating area for TO-247
Figure 7.
AM10
3
4
3
v1
I
D
(A)
Tj=150°C
Tc=25°C
S
ingle p
u
l
s
e
100
10
µs
100
µs
10
1m
s
10m
s
1
0.1
10
V
D
S
(V)
0.1
1
100
6/17
Doc ID 15046 Rev 2
STF17N62K3, STP17N62K3, STW17N62K3
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
AM10
3
44v1
AM10
3
45v1
I
D
(A)
45
I
D
(A)
3
5
3
0
V
G
S
=15V
V
G
S
=10V
40
3
5
3
0
25
20
15
7V
25
20
15
6V
10
10
5
0
5
0
0
5V
D
S
(V)
5
2
20
25
V
8
V
G
S
(V)
10
15
0
4
6
Figure 10.
Gate charge vs gate-source voltage
Figure 11.
Static drain-source on resistance
AM10
3
46v1
AM10
3
47v1
V
(V)
G
S
R
D
S
(on)
(
Ω
)
V
D
S
V
I
DD
=496V
12
V
G
S
=10V
500
400
3
00
200
D
=15.5A
0.290
0.2
8
0
0.270
10
8
6
4
2
0
0.260
0.250
100
0
10
12
I
D
(A)
4
6
8
20
8
0
2
40
120
Q
100
g
(nC)
0
60
0
Figure 12.
Capacitance variations
Figure 13.
Output capacitance stored energy
AM10
3
4
8
v1
AM10
3
49v1
C
(pF)
E
o
ss
(
µ
J)
16
Ci
ss
14
12
1000
100
10
8
Co
ss
Cr
ss
6
10
1
4
2
0
0.1
100
200
400 500
1
10
V
D
S
(V)
0
100
3
00
V
D
S
(V)
Doc ID 15046 Rev 2
7/17
Electrical characteristics
STF17N62K3, STP17N62K3, STW17N62K3
Figure 14.
Normalized gate threshold voltage
Figure 15.
Normalized on resistance vs
vs temperature
temperature
AM10
3
50v1
AM10
3
51v1
V
G
S
(th)
R
D
S
(on)
(norm)
(norm)
I
D
=100
µ
A
V
I
G
S
=10V
=7.5A
1.1
1.0
2.5
2.0
D
0.9
0.
8
0.7
1.5
1.0
0.5
0
0.6
0.5
-75
-75
-25
25
75
T
J
(°C)
-25
25
75
T
J
(°C)
125
125
Figure 16.
Source-drain diode forward
characteristics
Figure 17.
Normalized B
vs temperature
VDSS
AM10
3
5
3
v1
AM10
3
52v1
V
(V)
S
D
BV
D
SS
(norm)
I
D
=1mA
1.1
1.10
1.05
1.00
0.95
0.90
1.0
0.9
0.
8
0.7
0.6
T
J
=-50°C
T
J
=25°C
T
J
=150°C
0.
8
5
0.
8
0
0.5
0.4
0
-75
2
4
6
8
10
I
S
D
(A)
-25
25
75
T
J
(°C)
12
125
Figure 18.
Maximum avalanche energy vs
starting Tj
AM10
3
54v1
E
A
S
(mJ)
2
8
0
I
D
=15.5 A
V
DD
=50 V
240
200
160
120
8
0
40
0
0
120
140 T
20
40
60
8
0 100
J
(°C)
8/17
Doc ID 15046 Rev 2
STF17N62K3, STP17N62K3, STW17N62K3
Test circuits
3
Test circuits
Figure 19.
Switching times test circuit for
resistive load
Figure 20.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
μ
F
R
L
μ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
μ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 21.
Test circuit for inductive load
switching and diode recovery times
Figure 22.
Unclamped Inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3
.
3
μ
F
V
DD
S
3
.
3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 23.
Unclamped inductive waveform
Figure 24.
Switching time waveform
t
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
td
on
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
Doc ID 15046 Rev 2
9/17
Package mechanical data
STF17N62K3, STP17N62K3, STW17N62K3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
is an ST trademark.
10/17
Doc ID 15046 Rev 2
STF17N62K3, STP17N62K3, STW17N62K3
Package mechanical data
Table 9.
Dim.
TO-220FP mechanical data
mm
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Figure 25.
TO-220FP drawing
L7
E
A
B
D
Di
a
L5
L6
F2
F1
F
G
H
G1
L4
L2
L
3
7012510_Rev_K
Doc ID 15046 Rev 2
11/17
Package mechanical data
STF17N62K3, STP17N62K3, STW17N62K3
Table 10.
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
12/17
Doc ID 15046 Rev 2
STF17N62K3, STP17N62K3, STW17N62K3
Figure 26.
TO-220 type A drawing
Package mechanical data
00159
88
_typeA_Rev_
S
Doc ID 15046 Rev 2
13/17
Package mechanical data
STF17N62K3, STP17N62K3, STW17N62K3
Table 11.
TO-247 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
b1
b2
c
2.0
3.0
0.40
19.85
15.45
D
E
e
5.45
18.50
5.50
L
14.20
3.70
14.80
4.30
L1
L2
∅
P
∅
R
S
3.55
4.50
3.65
5.50
14/17
Doc ID 15046 Rev 2
STF17N62K3, STP17N62K3, STW17N62K3
Figure 27.
TO-247 drawing
Package mechanical data
0075
3
25_F
Doc ID 15046 Rev 2
15/17
Revision history
STF17N62K3, STP17N62K3, STW17N62K3
5
Revision history
Table 12.
Document revision history
Date
Revision
Changes
11-Nov-2008
1
First release.
Section 2.1: Electrical characteristics (curves)
has been updated.
27-Jul-2011
2
Minor text changes.
16/17
Doc ID 15046 Rev 2
STF17N62K3, STP17N62K3, STW17N62K3
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Doc ID 15046 Rev 2
17/17
