STMicroelectronics-STP18N60M6
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STP18N60M6
Datasheet
N-channel 600 V, 230 mΩ typ., 13 A, MDmesh™ M6 Power MOSFET
in a TO-220 package
Features
V
R
max.
I
D
Order code
STP18N60M6
DS
DS(on)
TAB
600 V
280 mΩ
13 A
•
•
•
•
•
Reduced switching losses
3
2
Lower R
DS(on)
per area vs previous generation
Low gate input resistance
100% avalanche tested
1
TO-220
Zener-protected
D(2, TAB)
Applications
•
•
•
Switching applications
G(1)
LLC converters
Boost PFC converters
S(3)
AM01475V1
Description
The new MDmesh™ M6 technology incorporates the most recent advancements to
the well-known and consolidated MDmesh family of SJ MOSFE
T
s
.
STMicroelectronics builds on the previous generation of MDmesh devices through its
new M6 technology, which combines excellent R
DS(on)
per area improvement with
one of the most effective switching behaviors available, as well as a user-friendly
experience for maximum end-application efficiency.
Product status link
Product summary
Order code
STP18N60M6
Marking
Package
Packing
18N60M6
TO-220
Tube
DS12811
–
Rev 1
–
November 2018
For further information contact your local STMicroelectronics sales office.
STP18N60M6
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
±25
13
Unit
V
Gate-source voltage
V
GS
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
= 25 °C
case
case
I
A
D
= 100 °C
8.2
I
38
A
DM
P
T
o
tal power dissipation at T
= 25 °C
case
110
15
W
TOT
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
V/ns
°C
100
T
stg
-55 to 150
T
j
Operating junction temperature range
1. Pulse
width is limited by safe operating area.
2.
3.
I
≤ 13 A, di/dt ≤ 400 A/μs, V
< V
, V
= 400 V
(BR)DSS DD
SD
DS(peak)
V
≤ 480 V
DS
Table 2.
Thermal data
Parameter
Symbol
Value
1.14
Unit
°C/W
°C/W
R
Thermal resistance junction-case
Thermal resistance junction-ambient
thj-case
R
thj-amb
62.5
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or non-repetitive
I
2.7
A
AR
(pulse width limited by T
)
Jmax
Single pulse avalanche energy
(starting T
= 25 °C, I
= I
, V
= 50 V)
E
210
mJ
AS
j
D
AR
DD
DS12811
–
Rev 1
page 2/13
STP18N60M6
Electrical characteristics
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified).
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
V
V
V
T
= 0
V
, I
= 1
m
A
Drain-source breakdown voltage
600
V
(BR)DSS
GS
GS
GS
D
= 0
V
, V
=
6
00 V
1
DS
I
= 0
V
, V
=
6
00
V
,
Zero gate voltage drain current
µA
DSS
DS
100
case
I
V
= 0
V
, V
=
±
25 V
GS
Gate-body leakage current
Gate threshold voltage
±5
µA
V
GSS
DS
DS
V
V
I
= V
, I
= 250 µA
3.25
4
4.75
280
GS(th)
DS(on)
GS
D
R
= 6.5 A, V
= 10 V
GS
Static drain-source on-resistance
230
mΩ
D
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ.
650
45
Max.
Unit
C
iss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
C
oss
V
V
= 100
V
, f = 1
M
Hz, V
= 0 V
Output capacitance
pF
DS
GS
C
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
2
rss
= 0 to 480
V
, V
= 0 V
C
oss eq.
123
4.6
16.8
4.5
pF
Ω
DS
GS
R
f = 1 MHz, I
= 0 A
D
G
Q
V
V
= 480 V, I
= 13 A,
g
DD
GS
D
= 0 to 10 V
Q
Gate-source charge
gs
nC
Q
Gate-drain charge
–
8.4
–
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Min.
Typ.
16
7
Max.
Unit
t
V
= 300
V
, I
=
6
.5 A,
–
–
–
–
–
–
d(on)
DD
D
R
G
= 4.7 Ω, V
= 10 V
t
GS
Rise time
r
ns
t
Turn-off delay time
28
d(off)
t
Fall time
–
9
–
f
DS12811
–
Rev 1
page 3/13
STP18N60M6
Electrical characteristics
Table 7.
Source-drain diode
Test conditions
Symbol
Parameter
Source-drain current
Min.
Typ.
Max.
13
Unit
A
I
–
–
–
–
–
SD
I
Source-drain current (pulsed)
Forward on voltage
38
A
SDM
V
I
I
= 13 A, V
= 0 V
1.6
V
SD
SD
GS
SD
t
= 13 A, di/dt = 100 A/µs,
= 60 V
Reverse recovery time
Reverse recovery charge
208
1.9
ns
µC
rr
V
Q
DD
rr
I
Reverse recovery current
–
18
A
RRM
t
I
V
= 13 A, di/dt = 100 A/µs,
Reverse recovery time
–
–
290
2.9
ns
rr
SD
= 60
V
,
DD
Q
Reverse recovery charge
µC
rr
T =
150 °C
j
I
Reverse recovery current
–
20
A
RRM
1. Pulse
width is limited by safe operating area.
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
DS12811
–
Rev 1
page 4/13
STP18N60M6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 2.
Thermal impedance
Figure 1.
Safe operating area
GIPG311020181054SOA
I
D
(A)
in this area is
Operation
limited by R
DS(on)
t
p
=1 µs
10
1
t
p
=10 µs
t
p
=100 µs
t
p
=1 ms
10
0
T
J
≤
150 °C
T
C
=25 °C
t
p
=10 ms
V
GS
=10 V
single pulse
10
1
10
-1
10
-1
10
0
10
2
V
DS
(V)
Figure 4.
Transfer characteristics
Figure 3.
Output characteristics
GIPG311020181052OCH
I
D
(A)
GIPG311020181052TCH
I
D
(A)
V
GS
=9 V
V
GS
=8 V
V
GS
= 10 V
30
25
20
15
10
30
25
20
15
10
V
DS
= 14 V
V
GS
=7 V
V
GS
=6 V
5
0
5
0
0
2
4
6
8
10
12
V
DS
(V)
4
5
6
7
8
9
V
GS
(V)
Figure 5.
Gate charge vs gate-source voltage
Figure 6.
Static drain-source on-resistance
GIPG311020181053QVG
GIPG311020181050RID
V
DS
(V)
V
GS
(V)
R
DS(on)
(mΩ)
V
DD
= 480 V
I
D
= 13 A
600
500
400
300
200
12
10
8
250
Q
g
V
GS
=10 V
V
DS
Q
gd
Q
gs
240
230
6
4
220
210
100
0
2
0
0
4
8
12
16
Q
g
(nC)
0
2
4
6
8
10
12
I
D
(A)
DS12811
–
Rev 1
page 5/13
STP18N60M6
Electrical characteristics (curves)
Figure 7.
Capacitance variations
Figure 8.
Output capacitance stored energy
GIPG311020181051CVR
GADG311020181207EOS
C
(pF)
E
OSS
(µJ)
6
10
3
10
2
5
4
3
2
C
ISS
C
OSS
f = 1 MHz
10
1
10
0
C
RSS
1
0
10
-1
10
0
10
1
10
2
V
DS
(V)
0
100 200 300 400 500 600
V
DS
(V)
Figure 9.
Normalized gate threshold voltage vs
temperature
Figure 10.
Normalized on-resistance vs temperature
GIPG311020181049RON
R
DS(on)
(norm.)
GIPG311020181049VTH
V
GS(th)
(norm.)
I
D
=250 A
1.1
2.5
V
GS
= 10 V
2.0
1.5
1.0
1.0
0.9
0.8
0.5
0.0
0.7
0.6
-75
-25
25
75
125
T
J
(°C)
-75
-25
25
75
125
T
J
(°C)
Figure 11.
Normalized V
(BR)DSS
vs temperature
Figure 12.
Source-drain diode forward characteristics
GIPG311020181051SDF
GIPG311020181050BDV
V
SD
(V)
V
(BR)DSS
(norm.)
1.1
1.10
1.05
1.00
0.95
T
j
= -50 °C
I
D
= 1 mA
1.0
0.9
T
j
= 25 °C
0.8
0.7
T
j
= 150 °C
0.90
0.85
0.6
0.5
0
2
4
6
8
10
12
I
SD
(A)
-75
-25
25
75
125
T
J
(°C)
DS12811
–
Rev 1
page 6/13
STP18N60M6
Test circuits
3
Test circuits
Figure 13.
Test circuit for resistive load switching times
Figure 14.
Test circuit for gate charge behavior
V
DD
RL
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v10
AM01468v1
Figure 15.
Test circuit for inductive load switching and
diode recovery times
Figure 16.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
25 Ω
I
D
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 18.
Switching time waveform
Figure 17.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
AM01472v1
10%
AM01473v1
DS12811
–
Rev 1
page 7/13
STP18N60M6
Package information
4
Package information
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
DS12811
–
Rev 1
page 8/13
STP18N60M6
TO-220 type A package information
4.1
TO-220 package information
Figure 19.
TO-220 type A package outline
0015988_typeA_Rev_22
DS12811
–
Rev 1
page 9/13
STP18N60M6
TO-220 type A package information
Table 8.
TO-220 type A package mechanical data
mm
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
Typ.
Max.
4.60
0.88
1.55
0.70
15.75
A
b
b1
c
D
D1
E
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
16.40
28.90
3.75
2.65
3.85
2.95
DS12811
–
Rev 1
page 10/13
STP18N60M6
Revision history
Table 9.
Document revision history
Date
05-Nov-2018
Version
Changes
1
Initial release.
DS12811
–
Rev 1
page 11/13
STP18N60M6
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
TO-220 package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
DS12811
–
Rev 1
page 12/13
STP18N60M6
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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T
.
A
ll other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS12811
–
Rev 1
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