STMicroelectronics-STP18NM60ND
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STB18NM60ND, STF18NM60ND,
STP18NM60ND, STW18NM60ND
N-channel 600 V – 0.25
Ω
typ., 13 A FDmesh™ II Power MOSFET
2
(with fast diode) in D
PAK, TO-220F
P
,
T
O-220 and TO-247 packages
Datasheet
−
production data
Features
TAB
V
DSS
@
R
DS(on)
I
D
Order codes
3
T
Jmax
max
1
3
2
D
2
PAK
1
STB18NM60ND
STF18NM60ND
STP18NM60ND
STW18NM60ND
TO-220FP
650 V
<0.29
Ω
13 A
TAB
•
The worldwide best R
DS(on)
* area amongst the
fast recovery diode devices
3
3
2
2
•
100% avalanche tested
1
1
TO-220
TO-247
•
Low input capacitance and gate charge
•
Low gate input resistance
Figure 1. Internal schematic diagram
•
Extremely high dv/dt and avalanche
capabilities
‘ꢅꢆꢇꢈ7$%ꢉ
Applications
•
Switching applications
*ꢅꢁꢉ
Description
These FDmesh™ II Power MOSFE
T
s
w
ith
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance.
They are ideal for bridge
topologies and ZVS phase-shift converters.
6ꢅꢊꢉ
$0ꢀꢁꢂꢃꢄYꢁ
Table 1. Device summary
Order codes
Marking
Package
Packaging
D
2
PAK
TO-220FP
TO-220
STB18NM60ND
STF18NM60ND
STP18NM60ND
STW18NM60ND
T
a
pe and reel
18NM60ND
Tube
TO-247
May 2013
DocID024653 Rev 1
1/22
This is information on a product in full production.
22
Contents
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Contents
1
2
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
3
4
5
6
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22
DocID024653 Rev 1
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
D
2
PAK, TO-
220, TO-247
TO-220FP
V
DS
V
GS
I
D
Drain-source voltage
600
V
V
A
A
Gate-source voltage
± 25
13
(1)
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
13
8.19
52
8.19
(1)
I
D
(2)
52
(1)
30
Drain current (pulsed)
A
I
DM
P
TOT
T
o
tal dissipation at T
C
= 25 °C
130
W
dv/dt
(3)
dv/dt
(4)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
40
40
V/ns
V/ns
Insulation withstand voltage (RMS) from all three
leads to external heat sink
V
ISO
—
2500
V
(t=1 s;T
C
=25 °C)
T
stg
T
j
Storage temperature
-55 to 150
150
°C
°C
Operating junction temperature
1. Limited
by maximum junction temperature
2. Pulse
width limited by safe operating area
3.
4.
I
≤
13 A, di/dt
≤
400 A/µs, V
= 80% V
V
≤
V
SD
DD
(BR)DSS, DS(peak)
(BR)DSS
V
≤
480 V
DS
Table 3. Thermal data
D²PAK TO-220FP
TO-220 TO-247
Unit
Symbol
R
thj-case
R
thj-amb
R
thj-pcb
Parameter
Thermal resistance junction-case max
Thermal resistance junction-amb max
Thermal resistance junction-pcb max
0.96
4.17
0.96
0.96
50
°C/W
°C/W
°C/W
62.5
30
Table 4. Avalanche characteristics
Parameter
Symbol
Max value
Unit
Avalanche current, repetitive or not-repetitive (pulse
I
AS
3.5
A
width limited by T
j max
)
Single pulse avalanche energy
E
AS
187
mJ
(starting Tj = 25 °C, I
D
= I
AS
, V
DD
= 50 V)
DocID024653 Rev 1
3/22
Electrical characteristics
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5. On/off states
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
600
V
V
DS
= 600 V,
Zero gate voltage drain
current (V
GS
= 0)
1
µA
µA
I
DSS
V
DS
= 600 V, T
C
=125 °C
100
Gate body leakage current
(V
DS
= 0)
I
GSS
V
GS(th)
R
DS(on)
V
GS
= ±20 V
100
5
nA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 6.5 A
Gate threshold voltage
3
4
V
Static drain-source on
resistance
0.25 0.29
Ω
Table 6. Dynamic
Test conditions
Symbol
C
iss
Parameter
Input capacitance
Output capacitance
Min. Typ. Max. Unit
–
–
1030
30
–
–
pF
pF
V
DS
= 50 V, f =1 MHz,
V
GS
= 0
C
oss
Reverse transfer
capacitance
C
rss
–
–
3.2
–
–
pF
pF
Equivalent output
capacitance
(1)
V
GS
= 0, V
DS
= 0V to 480 V
148
C
oss eq.
f=1 MHz Gate DC Bias=0
T
e
st signal level=20 mV
open drain
Rg
Gate input resistance
–
3.6
–
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
34
5.5
20
–
–
–
nC
nC
nC
V
DD
= 480 V, I
D
= 13 A
V
GS
= 10 V
1.
C
is defined as a constant equivalent capacitance giving the same charging time as C
when V
oss eq.
oss DS
increases from 0 to 80% V
DSS
4/22
DocID024653 Rev 1
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Table 7. Switching times
Electrical characteristics
Min Typ Max
Unit
Symbol
Parameter
Turn-on delay time
Rise time
Test conditions
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
55
15.5
13
–
–
–
–
ns
ns
ns
ns
V
DD
= 300 V, I
D
= 6.5 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
Turn-off delay time
Fall time
18
Table 8. Source drain diode
Test conditions
Symbol
Parameter
Min Typ Max Unit
I
SD
Source-drain current
–
–
13
52
A
A
(1)
Source-drain current (pulsed)
I
SDM
(2)
Forward on voltage
I
SD
= 13 A, V
GS
=0
–
–
–
–
–
–
–
1.6
V
ns
nC
A
V
SD
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
136
843
I
SD
=13 A, di/dt =100 A/µs,
V
DD
= 100 V
I
RRM
t
rr
12.5
198
ns
nC
A
V
DD
= 100 V
Q
rr
1425
14.5
di/dt =100 A/µs, I
SD
= 13 A
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
DocID024653 Rev 1
5/22
Electrical characteristics
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for D
2
PAK and
TO-220
Figure 3. Thermal impedance for D
2
PAK and
TO-220
AM15785v1
I
D
(A)
10
10µs
100µs
1ms
1
Tj=150°C
10ms
Tc=25°C
Single
pulse
0.1
10
V
DS
(V)
0.1
1
100
Figure 4. Safe operating area for TO-220FP
Figure 5. Thermal impedance for TO-220FP
AM15786v1
I
D
(A)
10
10µs
100µs
1ms
1
10ms
Tj=150°C
Tc=25°C
0.1
Single
pulse
0.01
10
V
DS
(V)
0.1
1
100
Figure 6. Safe operating area for TO-247
Figure 7. Thermal impedance for TO-247
AM15787v1
I
D
(A)
10
10µs
100µs
1ms
1
Tj=150°C
Tc=25°C
10ms
Single
pulse
0.1
10
V
DS
(V)
0.1
1
100
6/22
DocID024653 Rev 1
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Electrical characteristics
Figure 8. Output characteristics
Figure 9. Transfer characteristics
AM15788v1
AM15789v1
I
D
(A)
D
(A)
30
28
26
24
22
20
18
16
14
12
10
8
I
V
GS
=7, 8, 9, 10V
V
DS
=18V
28
26
24
22
20
18
16
14
12
10
8
6V
5V
6
4
2
6
4
2
0
4V
0
15
2
5
10
10
20
V
DS
(V)
8
V
GS
(V)
0
0
4
6
Figure 10. Gate charge vs gate-source voltage
Figure 11. Static drain-source on-resistance
AM15791v1
AM15790v1
V
GS
R
DS(on)
(
Ω
)
V
DS
(V)
(V)
V
DD
=480V
V
GS
=10V
V
DS
0.265
0.260
500
10
I
D
=13A
400
300
200
8
6
0.255
0.250
4
2
0
0.245
0.240
100
0
8
12
Q
g
(nC)
8
10
I
D
(A)
0
16
24
32
0
4
2
6
Figure 12. Capacitance variations
Figure 13. Normalized gate threshold voltage
vs. temperature
AM15792v1
AM15793v1
C
V
GS(th)
(norm)
(pF)
ID=250 µA
1.10
1.05
Ciss
1000
1.00
0.95
0.90
100
Coss
Crss
0.85
0.80
10
1
0.75
0.70
0.1
100
-25
0
25 50
1
10
V
DS
(V)
-50
75
125 T
J
(°C)
100
DocID024653 Rev 1
7/22
Electrical characteristics
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Figure 14. Normalized on-resistance vs
temperature
Figure 15. Source-drain diode forward
characteristics
AM15794v1
AM15795v1
R
DS(on)
(norm)
SD
(V)
V
T
J
=-50°C
I
D
=13 A
2.1
1.2
1.9
1.7
T
J
=25°C
1
1.5
1.3
1.1
0.9
0.7
0.5
T
J
=150°C
0.8
0.6
0.4
0
25
125
T
J
(°C)
0
2
4
6
8
I
SD
(A)
-50
-25
50
100
10
75
12
Figure 16. Normalized V
DS
vs temperature
AM15796v1
V
DS
(norm)
I
D
=1mA
1.08
1.06
1.04
1.02
1
0.98
0.96
0.94
0.92
-50 -25
0
25 50
75
125 T
J
(°C)
100
8/22
DocID024653 Rev 1
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Test circuit
3
Test circuit
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
Figure 19. Test circuit for inductive load
switching and diode recovery times
Figure 20. Unclamped Inductive load test circuit
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
DocID024653 Rev 1
9/22
Package mechanical data
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
10/22
DocID024653 Rev 1
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Package mechanical data
Table 9.
Dim.
D²PAK (TO-263) mechanical data
Min.
mm
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
DocID024653 Rev 1
11/22
Package mechanical data
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Figure 23.
D²PAK (TO-263) drawing
0079457_T
Figure 24.
D²PAK footprint
(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All
dimension are in millimeters
12/22
DocID024653 Rev 1
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Table 10.
TO-220FP mechanical data
Package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
DocID024653 Rev 1
13/22
Package mechanical data
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Figure 25.
TO-220FP drawing
7012510_Rev_K_B
14/22
DocID024653 Rev 1
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Package mechanical data
Table 11.
Dim.
TO-220 type A mechanical data
Min.
mm
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
3.50
3.93
16.40
28.90
∅
Q
P
3.75
2.65
3.85
2.95
DocID024653 Rev 1
15/22
Package mechanical data
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Figure 26.
TO-220 type A drawing
0015988_typeA_Rev_S
16/22
DocID024653 Rev 1
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Table 12.
TO-247 mechanical data
Package mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅
P
∅
R
S
3.55
4.50
5.30
3.65
5.50
5.70
DocID024653 Rev 1
17/22
Package mechanical data
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Figure 27.
TO-247 drawing
0075325_G
18/22
DocID024653 Rev 1
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Packaging mechanical data
5
Packaging mechanical data
Table 13.
D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
DocID024653 Rev 1
19/22
Packaging mechanical data
Figure 28.
Tape
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
Top cover
tape
P2
D
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 29.
Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
20/22
DocID024653 Rev 1
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Revision history
6
Revision history
Table 14. Document revision history
Date
Revision
Changes
15-May-2013
1
First release
DocID024653 Rev 1
21/22
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
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