STMicroelectronics-STP18NM80
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STB18NM80, STF18NM80,
STP18NM80, STW18NM80
N-channel 800
V
,
0
.25
Ω
, 17 A,
MDmesh™ Power MOSFET
in D²
P
A
K, TO-220F
P
,
T
O-220 and TO-247 packages
Datasheet — production data
Features
R
DS(on)
max
Order codes
V
DSS
I
D
3
3
2
1
STB18NM80
STF18NM80
STP18NM80
STW18NM80
800 V
800 V
800 V
800 V
< 0.295
Ω
< 0.295
Ω
17 A
(1)
17 A
1
D²
P
A
K
TO-220FP
< 0.295
Ω
< 0.295
Ω
17 A
17 A
1. Limited
only by maximum temperature allowed
3
3
2
2
1
1
■
100% avalanche tested
TO-220
■
Low input capacitance and gate charge
■
Low gate input resistance
TO-247
Application
Figure 1.
Internal schematic diagram
■
Switching applications
$ꢅꢆꢇ
Description
These N-channel Power MOSFETs are
developed using STMicroelectronics’
revolutionary MDmesh™ technolog
y
,
w
hich
associates the multiple drain process with the
company’s PowerMESH™ horizontal layout.
These devices offer extremely low on-resistance,
high dv/dt and excellent avalanche
‘ꢅꢁꢇ
3ꢅꢈꢇ
characteristics. Utilizing ST’s proprietary strip
technique, these Power MOSFETs boast an
overall dynamic performance which is superior to
similar products on the market.
!-ꢀꢁꢂꢃꢄVꢁ
Table 1.
Device summary
Order codes
Marking
Package
D²
P
A
K
Packaging
STB18NM80
STF18NM80
STP18NM80
STW18NM80
T
a
pe and reel
TO-220FP
TO-220
18NM80
T
u
be
TO-247
May 2012
Doc ID 15421 Rev 5
1/21
This is information on a product in full production.
21
Contents
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
TO-220 D²PAK TO-247
TO-220FP
V
DS
V
GS
Drain-source voltage
800
30
V
V
Gate-source voltage
Drain current (continuous) at
T
C
= 25 °C
I
D
17
17
(1)
A
A
Drain current (continuous) at
T
C
= 100 °C
I
D
10.71
10.71
(1)
(2)
I
DM
Drain current (pulsed)
68
68
(1)
40
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
190
W
Insulation withstand voltage (RMS)
V
ISO
from all three leads to external heat
sink (t = 1 s;T
C
= 25 °C)
2500
V
T
stg
T
j
Storage temperature
-65 to 150
°C
°C
Max. operating junction temperature
150
1. Limited
only by maximum temperature allowed
2. Pulse
width limited by safe operating area
T
a
ble 3.
Symbol
Thermal data
Parameter
Value
Unit
TO-220 D²
P
A
K TO-247
TO-220FP
R
thj-case
Thermal resistance junction-case
R
thj-amb
Thermal resistance junction-amb
R
thj-pcb
Thermal resistance junction-pcb
0.66
3.13
62.5
°C/W
°C/W
°C/W
62.5
50
30
Maximum lead temperature for
soldering purpose
T
l
300
°C
T
a
ble 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
I
AS
4
A
Single pulse avalanche energy
E
AS
600
mJ
(starting Tj = 25 °C, I
D
= I
AS
, V
DD
= 50 V)
Doc ID 15421 Rev 5
3/21
Electrical characteristics
STB18NM80, STF18NM80, STP18NM80, STW18NM80
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
T
a
ble 5.
Symbol
On/off states
Parameter
Test conditions
I
D
= 1 mA, V
GS
= 0
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
800
V
V
DS
= 800
V
,
10
µA
µA
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
V
DS
= 800
V
,
Tc = 125 °C
100
Gate body leakage current
(V
DS
= 0)
I
GSS
V
GS
=
30 V
100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10
V
,
I
D
= 8.5 A
3
4
5
V
Static drain-source
R
DS(on)
0.25 0.295
Ω
on-resistance
T
a
ble 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max.
Unit
(1)
g
fs
Forward transconductance
V
DS
= 15
V
,
I
D
= 8.5 A
–
14
–
S
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
2070
210
29
pF
pF
pF
V
DS
= 50
V
, f = 1
M
Hz, V
GS
= 0
–
–
Reverse transfer
capacitance
Equivalent output
capacitance
(2)
C
oss eq.
V
GS
= 0, V
DS
= 0 to 640 V
–
–
316
4
–
–
pF
f = 1 MHz Gate DC Bias = 0
T
e
st Signal Level = 20 mV
Open Drain
R
G
Gate input resistance
Ω
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 640
V
,
I
D
= 17 A
70
13
40
nC
nC
nC
V
GS
= 10 V
–
–
1. Pulsed:
pulse duration = 300µs, duty cycle 1.5%
2. .
is defined as a constant equivalent capacitance giving the same charging time as C
C
when V
DS
oss eq
oss
increases from 0 to 80% V
DSS
4/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Electrical characteristics
T
a
ble 7.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ. Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
18
28
96
50
ns
ns
ns
ns
V
DD
= 400
V
,
I
D
= 8.5 A,
R
G
= 4.7
Ω
,
V
GS
= 10 V
–
–
T
u
rn-off delay time
Fall time
T
a
ble 8.
Symbol
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max. Unit
I
SD
Source-drain current
17
68
A
A
–
–
(1)
I
SDM
Source-drain current (pulsed)
(2)
V
SD
Forward on voltage
I
SD
= 17 A, V
GS
= 0
1.6
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
618
9.6
ns
µC
A
I
SD
= 17 A, di/dt = 100
A/µs, V
DD
= 100
V
,
Q
rr
–
–
I
RRM
31.2
I
SD
= 17 A,
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
822
13
ns
µC
A
di/dt = 100 A/µs,
Q
rr
V
DD
= 100
V
,
T
j=150°C
I
RRM
31.8
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15421 Rev 5
5/21
Electrical characteristics
STB18NM80, STF18NM80, STP18NM80, STW18NM80
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
D²
P
A
K
Figure 3.
Thermal impedance for TO-220,
D²
P
A
K
I
D
(A)
10
10
µs
100
µs
1m
s
1
10m
s
Tj=150°C
Tc=25°C
S
ingle
p
u
l
s
e
0.1
10
V
D
S
(V)
0.1
1
100
Figure 4.
Safe operating area for TO-247
Figure 5.
Thermal impedance for TO-247
I
D
(A)
10
µs
10
100
µs
1m
s
10m
s
1
Tj=150°C
Tc=25°C
S
ingle
p
u
l
s
e
0.1
10
V
D
S
(V)
0.1
1
100
Figure 6.
Safe operating area for TO-220FP
Figure 7.
Thermal impedance for TO-220FP
I
D
(A)
10
10
µs
100
µs
1m
s
1
10m
s
Tj=150°C
Tc=25°C
0.1
S
ingle
p
u
l
s
e
0.01
10
V
D
S
(V)
0.1
1
100
6/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
I
D
(A)
I
D
(A)
V
G
S
=10V
40
3
5
3
0
25
20
15
10
V
D
S
=20V
40
3
5
3
0
25
7V
20
15
10
6V
5V
5
0
5
0
0
5
2
20
V
D
S
(V)
8
10
V
G
S
(V)
10
15
0
4
6
Figure 10.
Normalized B
VDSS
vs temperature
Figure 11.
Static drain-source on-resistance
BV
D
SS
(norm)
R
D
S
(on)
(
Ω
)
I
D
=1mA
V
G
S
=10V
1.06
1.0
3
1.00
0.2
8
0.26
0.24
0.9
8
0.22
0.2
0.95
0.92
10
15
5
-50
-25
0
25 50 75
T
J
(°C)
0
I
D
(A)
100
Figure 12.
Gate charge vs gate-source voltage
Figure 13.
Capacitance variations
V
(V)
G
S
C
(pF)
700
600
500
400
V
G
S
V
DD
=640V
12
100000
I
D
=17A
V
D
S
10
8
10000
Ci
ss
1000
100
6
3
00
Co
ss
4
2
0
200
100
0
Cr
ss
10
1
40
8
0
0.1
100
V
D
S
(V)
0
20
60
Q
g
(nC)
1
10
1000
Doc ID 15421 Rev 5
7/21
Electrical characteristics
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Figure 14.
Normalized gate threshold voltage
Figure 15.
Normalized on-resistance vs
vs temperature
temperature
V
G
S
(th)
R
D
S
(on)
(norm)
(norm)
I
D
=250
µ
A
2.1
1.10
I
D
=
8
.5A
V
G
S
=10V
1.9
1.7
1.00
0.90
1.5
1.
3
1.1
0.9
0.
8
0
0.7
0.5
-50
-25
0.70
-50
-25
0
25 50 75
T
J
(°C)
0
25 50 75
T
J
(°C)
100
100
8/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Test circuits
3
Test circuits
Figure 16.
Switching times test circuit for
resistive load
Figure 17.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
μ
F
R
L
μ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
μ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 18.
Test circuit for inductive load
switching and diode recovery times
Figure 19.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3
.
3
μ
F
V
DD
S
3
.
3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 20.
Unclamped inductive waveform
Figure 21.
Switching time waveform
t
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
td
on
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
Doc ID 15421 Rev 5
9/21
Package mechanical data
STB18NM80, STF18NM80, STP18NM80, STW18NM80
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
ECO
P
A
CK is an ST trademark.
T
a
ble 9.
Dim.
D²
P
A
K (TO-263) mechanical data
mm
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
10/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Figure 22.
D²
P
A
K (TO-263) drawing
Package mechanical data
0079457_T
Figure 23.
D²
P
A
K footprint
(a)
16.90
12.20
5.0
8
1.60
3
.50
9.75
Footprint
a. All
dimensions are in millimeters
Doc ID 15421 Rev 5
11/21
Package mechanical data
STB18NM80, STF18NM80, STP18NM80, STW18NM80
T
a
ble 10.
TO-220FP mechanical data
Dim.
mm
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
12/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Figure 24.
TO-220FP drawing
Package mechanical data
7012510_Rev_K_B
Doc ID 15421 Rev 5
13/21
Package mechanical data
STB18NM80, STF18NM80, STP18NM80, STW18NM80
T
a
ble 11.
TO-220 type A mechanical data
Dim.
mm
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
14/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Figure 25.
TO-220 type A drawing
Package mechanical data
00159
88
_typeA_Rev_
S
Doc ID 15421 Rev 5
15/21
Package mechanical data
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Table 12.
TO-247 mechanical data
Dim.
mm.
Typ.
Min.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅
P
∅
R
S
3.55
4.50
5.30
3.65
5.50
5.70
16/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Figure 26.
TO-247 drawing
Package mechanical data
0075
3
25_G
Doc ID 15421 Rev 5
17/21
Packaging mechanical data
STB18NM80, STF18NM80, STP18NM80, STW18NM80
5
Packaging mechanical data
Table 13.
D²
P
A
K (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
18/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Figure 27.
Tape
Packaging mechanical data
10 pitche
s
c
u
m
u
l
a
tive
toler
a
nce on t
a
pe +/- 0.2 mm
P0
D
P2
Top cover
t
a
pe
T
E
F
W
K0
B0
A0
D1
P1
U
s
er direction of feed
R
Bending r
a
di
us
U
s
er direction of feed
AM0
88
52v2
Figure 28.
Reel
T
REEL DIMEN
S
ION
S
40mm min.
Acce
ss
hole
At
s
l ot
loc
a
tion
B
D
C
N
A
G me
asu
red
a
t h
ub
F
u
ll r
a
di
us
T
a
pe
s
lot
in core for
t
a
pe
s
t
a
rt 25 mm min.
width
AM0
88
51v2
Doc ID 15421 Rev 5
19/21
Revision history
STB18NM80, STF18NM80, STP18NM80, STW18NM80
6
Revision history
T
a
ble 14.
Document revision history
Date
Revision
Changes
25-Feb-2009
07-Apr-2009
20-Apr-2009
09-Sep-2009
1
2
3
4
First release.
Section 4: Package mechanical data
has been modified.
R
DS(on)
max value has been corrected.
Document status promoted from preliminary data to datasheet.
updated.
25-May-2012
5
Minor text changes.
20/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
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