STMicroelectronics-STP20NM50FD
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STB20NM50FD
STF20NM50FD – STP20NM50FD
N-channel 500
V
,
0
.22
Ω
, 20 A D
2
P
A
K, TO-220F
P
,
T
O-220
FDmesh™ Power MOSFET (with fast diode)
Features
R
DS(on)
max
Type
V
DSS
R
DS(on)
* Qg
I
D
STB20NM50FD 500 V < 0.25
Ω
8.36
Ω
* nC
STF20NM50FD 500 V < 0.25
Ω
8.36
Ω
* nC
STP20NM50FD 500 V < 0.25
Ω
8.36
Ω
* nC
20 A
20 A
20 A
3
3
2
2
1
1
TO-220
TO-220FP
3
■
High dv/dt and avalanche capabilities
■
100% avalanche tested
1
D²
P
A
K
■
Low input capacitance and gate charge
■
Low gate input resistance
■
Tight process control and high manufacturing
yields
Figure 1.
Internal schematic diagram
Application
■
Switching applications
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
Table 1.
Device summary
Order codes
Marking
Package
D²
P
A
K
Packaging
STB20NM50FD
STF20NM50FD
STP20NM50FD
B20NM50FD
F20NM50FD
P20NM50FD
T
a
pe and reel
T
u
be
TO-220FP
TO-220
T
u
be
April 2008
Rev 9
1/16/
16
Contents
STB20NM50FD – STF20NM50FD – STP20NM50FD
Contents
1
2
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
3
4
5
6
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
STB20NM50FD – STF20NM50FD – STP20NM50FD
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
D²
P
A
K
TO-220
TO-220FP
V
DS
V
GS
I
D
Drain-source voltage (V
GS
=0)
500
30
V
V
A
A
Gate-source voltage
20
(1)
14
(1)
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
20
14
I
D
(2)
80
(1)
45
Drain current (pulsed)
80
A
W
I
DM
P
TOT
T
o
tal dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
192
dv/dt
(3)
20
V/ns
Insulation withstand voltage (RMS) from all three
leads to external heat sink
V
ISO
—
2500
V
(t=1 s;T
C
=25 °C)
T
stg
T
j
Storage temperature
-65 to 150
150
°C
°C
Operating junction temperature
1. Limited
only by maximum temperature allowed
2. Pulse
width limited by safe operating area
3. I
SD
≤
20 A, di/dt
≤
200 A/µs, V
DD
= 80% V
(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
TO-220
D²
P
A
K
TO-220FP
Unit
°C/W
°C/W
°C/W
R
thj-case
R
thj-amb
R
thj-pcb
Thermal resistance junction-case max
Thermal resistance junction-amb max
Thermal resistance junction-pcb max
0.65
2.8
62.5
—
62.5
—
—
30
Maximum lead temperature for
soldering purposes
T
l
300
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
I
AS
10
A
Single pulse avalanche energy
E
AS
700
mJ
(starting Tj = 25 °C, I
D
= I
AS
, V
DD
= 35 V)
3/16
Electrical characteristics
STB20NM50FD – STF20NM50FD – STP20NM50FD
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
I
D
= 250 µA, V
GS
= 0
500
V
V
DS
= Max rating,
1
µA
µA
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
V
DS
= Max rating,@125 °C
10
Gate body leakage current
(V
DS
= 0)
I
GSS
V
GS
=
30 V
100
nA
V
GS(th)
R
DS(on)
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10
V
,
I
D
= 10 A
Gate threshold voltage
3
4
5
V
Static drain-source on
resistance
0.22
0.25
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 10 A
,
(1)
g
fs
Forward transconductance
9
S
Input capacitance
C
iss
C
oss
C
rss
1380
290
40
pF
pF
pF
V
DS
= 25
V
, f
=
1 MHz,
V
GS
= 0
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
(2)
V
GS
= 0, V
DS
= 0 to 400 V
C
oss eq.
130
2.8
pF
f=1 MHz Gate DC Bias=0
T
e
st signal level=20 mV
open drain
Rg
Gate input resistance
Ω
V
DD
= 400
V
,
I
D
= 20 A
V
GS
= 10 V
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
38
18
10
53
nC
nC
nC
(see Figure 16)
1. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
4/16
STB20NM50FD – STF20NM50FD – STP20NM50FD
Electrical characteristics
Min Typ Max
Unit
Table 7.
Symbol
Switching times
Parameter
Test conditions
V
DD
= 250
V
,
I
D
= 10 A,
R
G
= 4.7
Ω
,
V
GS
= 10 V
(see Figure 15)
t
d(on)
t
r
T
u
rn-on delay time
Rise time
22
20
ns
ns
t
r(Voff)
V
DD
= 400
V
,
I
D
= 20 A,
R
G
= 4.7
Ω
,
V
GS
= 10 V
(see Figure 15)
Off-voltage rise time
Fall time
6
ns
ns
ns
t
f
15
30
Cross-over time
t
c
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ Max Unit
I
SD
Source-drain current
20
80
A
A
(1)
I
SDM
Source-drain current (pulsed)
(2)
V
SD
Forward on voltage
I
SD
= 20 A, V
GS
=0
1.5
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
245
2
ns
nC
A
I
SD
=20 A, di/dt =100 A/µs,
V
DD
= 60
V
,
T
J
=150 °C
Q
rr
(see Figure 17)
I
RRM
16
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
5/16
Electrical characteristics
STB20NM50FD – STF20NM50FD – STP20NM50FD
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220 /
D²
P
A
K
Figure 3.
Thermal impedance for TO-220 /
D²
P
A
K
Figure 4.
Safe operating area for TO-220FP
Figure 6.
Output characteristics
6/16
Figure 5.
Thermal impedance for TO-220FP
Figure 7.
Transfer characteristics
STB20NM50FD – STF20NM50FD – STP20NM50FD
Figure 8.
Transconductance
Electrical characteristics
Figure 9.
Static drain-source on resistance
Figure 10.
Gate charge vs gate-source voltage
Figure 11.
Capacitance variations
Figure 12.
Normalized gate threshold voltage
Figure 13.
Normalized on resistance vs
vs temperature
temperature
7/16
STB20NM50FD – STF20NM50FD – STP20NM50FD
Test circuit
3
Test circuit
Figure 15.
Switching times test circuit for
resistive load
Figure 16.
Gate charge test circuit
Figure 17.
Test circuit for inductive load
switching and diode recovery times
Figure 18.
Unclamped Inductive load test
circuit
Figure 19.
Unclamped inductive waveform
Figure 20.
Switching time waveform
9/16
Package mechanical data
STB20NM50FD – STF20NM50FD – STP20NM50FD
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
10/16
STB20NM50FD – STF20NM50FD – STP20NM50FD
Package mechanical data
TO-220 mechanical data
mm
Typ
inch
Dim
Min
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.4
8
15.25
4.60
0.
88
1.70
0.70
15.75
0.17
3
0.024
0.044
0.01
9
0.6
0.1
8
1
0.0
3
4
0.066
0.027
0.62
b
1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.
3
2
6.60
2.72
14
0.
393
0.0
9
4
0.1
9
4
0.04
8
0.244
0.0
9
4
0.511
0.1
3
7
0.40
9
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.
9
5
1.2
3
6.20
2.40
1
3
e1
F
H1
J1
L
L1
L20
L
3
0
∅
P
Q
3
.50
3
.
93
16.40
0.645
2
8
.
9
0
1.1
3
7
3
.75
3
.
8
5
2.
9
5
0.147
0.104
0.151
0.116
2.65
11/16
Package mechanical data
STB20NM50FD – STF20NM50FD – STP20NM50FD
TO-220FP mechanical data
mm.
Typ
inch
Typ.
Dim.
Min.
4.40
2.5
Max.
4.60
2.7
Min.
Max.
0.1
8
1
0.106
0.10
8
0.027
0.0
39
0.067
0.067
0.204
0.106
0.40
9
A
B
0.17
3
0.0
98
0.0
98
0.017
0.0
3
0
0.045
0.045
0.1
9
5
0.0
9
4
0.
393
D
2.5
2.75
0.70
1.00
1.50
1.50
5.20
2.70
10.40
E
0.45
0.75
1.15
1.15
4.
9
5
2.40
10
F
F1
F2
G
G1
H
L2
L
3
L4
L5
L6
L7
Di
a
16
0.6
3
0
2
8
.6
9
.
8
0
2.
9
3
0.6
10.60
3
.6
1.126
0.
38
5
0.114
0.626
0.
3
54
0.11
8
1.204
0.417
0.141
0.645
0.
3
66
0.126
15.
9
0
9
16.40
9
.
3
0
3
.2
3
L3
L6
L7
Di
a
1
2 3
L5
L2
L4
7012510-I
12/16
STB20NM50FD – STF20NM50FD – STP20NM50FD
Package mechanical data
D²
P
A
K (TO-26
3
) mechanical data
mm
Typ
inch
Dim
Min
Max
Min
Typ
Max
A
A1
b
4.40
0.0
3
0.70
1.14
0.45
1.2
3
8
.
9
5
7.50
10
4.60
0.2
3
0.
93
1.70
0.60
1.
3
6
9
.
3
5
0.17
3
0.001
0.027
0.045
0.017
0.04
8
0.
3
52
0.2
9
5
0.
39
4
0.
33
4
0.1
8
1
0.00
9
0.0
3
7
0.067
0.024
0.05
3
0.
3
6
8
b
2
c
c2
D
D1
E
10.40
0.40
9
E1
e
8
.50
2.54
0.1
e1
H
4.
88
15
5.2
8
15.
8
5
2.6
9
2.7
9
1.40
1.75
0.1
9
2
0.5
9
0
0.0
99
0.0
9
0
0.05
0.20
8
0.624
0.106
0.110
0.055
0.06
9
J1
L
2.4
9
2.2
9
1.27
1.
3
0
L1
L2
R
0.051
0.4
0.016
V2
0°
8
°
0°
8
°
0079457_M
13/16
Packaging mechanical data
STB20NM50FD – STF20NM50FD – STP20NM50FD
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504
0.520
0795
26.4 0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7
0.413 0.421
15.7 15.9
0.618 0.626
A0
B0
D
1.5
1.6 0.059
0.063
D1
E
1.59 1.61
0.062 0.063
1.65 1.85
0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449
0.456
5.0 0.189
0.197
4.1 0.153
0.161
12.1 0.468
0.476
2.1 0.075
0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35
0.0098 0.0137
23.7 24.3
0.933 0.956
W
* on sales type
14/16
STB20NM50FD – STF20NM50FD – STP20NM50FD
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16/16
