STMicroelectronics-STP210N75F6
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STP210N75F6
N-channel 75
V
, 3
m
Ω
, 120 A TO-220
S
T
r
ipFET™ VI DeepG
A
T
E™ Power MOSFET
Features
Order code
V
DSS
R
DS(on)
max
< 3.7 m
Ω
I
D
STP210N75F6
75 V
120 A
■
Low gate charge
■
Very low on-resistance
3
2
■
High avalanche ruggedness
1
TO-220
Application
Switching applications
Description
Figure 1.
Internal schematic diagram
This product is a 75 V N-channel S
T
r
ipFET™ VI
Power MOSFET based on the ST’s proprietary
S
T
r
ipFET™ technolog
y
,
w
ith a new gate structure.
The resulting Power MOSFET exhibits the lowest
$ꢅꢆꢇ
R
in all packages.
DS(on)
‘ꢅꢁꢇ
3ꢅꢈꢇ
!-ꢀꢁꢂꢃꢄVꢁ
Table 1.
Device summary
Order code
Marking
Package
TO-220
Packaging
STP210N75F6
210N75F6
T
u
be
May 2011
Doc ID 018507 Rev 1
1/13
13
Contents
STP210N75F6
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
Doc ID 018507 Rev 1
STP210N75F6
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
DS
V
GS
I
D
Drain-source voltage (V
GS
= 0)
Gate-source voltage
75
20
V
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
120
120
480
300
2
A
I
D
A
(1)
I
DM
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
Derating factor
W
W/°C
T
stg
T
j
Storage temperature
– 55 to 175
°C
Operating junction temperature
1. Current
limited by package.
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case max
0.5
°C/W
°C/W
R
thj-a
T
l
Thermal resistance junction-ambient max
62.5
Maximum lead temperature for soldering
purpose
300
°C
Doc ID 018507 Rev 1
3/13
Electrical characteristics
STP210N75F6
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source
V
(BR)DSS
I
D
= 250 µA, V
GS
= 0
75
V
Breakdown voltage
V
DS
= max rating
1
µA
µA
Zero gate voltage
I
DSS
Drain current (V
GS
= 0)
V
DS
= max rating,T
C
=125 °C
100
Gate-body leakage
current (V
DS
= 0)
I
GSS
V
GS
V
DS
= V
GS
, I
D
= 250 µA
GS
= 10
V
,
I
D
= 60 A
=
20 V
100
4
nA
V
V
GS(th)
Gate threshold voltage
2
Static drain-source on
resistance
R
DS(on)
V
3.0
3.7
m
Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ. Max.
Unit
C
iss
Input capacitance
Output capacitance
11800
1060
pF
pF
V
DS
= 25
V
, f = 1
M
Hz,
V
GS
= 0
C
oss
–
–
Reverse transfer
capacitance
C
rss
394
pF
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
171
50
nC
nC
nC
V
DD
= 37.5
V
,
I
D
= 120 A,
V
GS
= 10 V
–
–
36
4/13
Doc ID 018507 Rev 1
STP210N75F6
Electrical characteristics
Table 6.
Switching times
Parameter
Symbol
Test conditions
Min.
Typ.
Max. Unit
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
34
70
ns
–
–
V
DD
= 40
V
,
I
D
= 60 A
R
G
= 4.7
Ω
V
GS
= 10 V
ns
T
u
rn-off-delay time
Fall time
154
71
ns
–
–
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max Unit
I
SD
Source-drain current
–
–
–
120
480
1.5
A
A
V
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
(2)
V
SD
I
SD
= 120 A, V
GS
= 0
I
SD
= 120 A, V
DD
= 60 V
di/dt = 100 A/µs,
T
j
= 150 °C
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
60
144
4.8
ns
nC
A
Q
rr
–
I
RRM
1. Current
limited by package.
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Doc ID 018507 Rev 1
5/13
Electrical characteristics
STP210N75F6
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM09029v1
2
8
0tok
I
D
(A)
K
Tj=175°C
Tc=25°C
S
ingle p
u
l
s
e
δ
=0.5
0.2
0.1
100
100
µs
0.05
10
-1
10
0.02
1m
s
Zth=k Rthj-c
δ
=tp/
τ
0.01
1
10m
s
S
ingle p
u
l
s
e
tp
τ
10
-2
10
-5
0.1
10
-2
10
-4
10
-1
10
–
3
10
V
D
S
(V)
p
(
s
)
t
0.1
1
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
AM090
3
0v1
AM090
3
1v1
I
D
(A)
I
D
(A)
V
G
S
=10V
3
50
3
00
250
3
50
3
00
250
200
V
D
S
=2V
5V
200
150
150
100
100
50
0
50
0
4V
D
S
(V)
2
2
8
V
8
V
G
S
(V)
0
4
6
0
4
6
Figure 6.
Normalized B
vs temperature
Figure 7.
Static drain-source on resistance
VDSS
AM090
3
2v1
AM090
33
v1
BV
D
SS
R
D
S
(on)
(
Ω
)
(norm)
I
D
=250
µ
A
3
.
8
1.15
1.10
V
G
S
=10V
3
.6
3
.4
3
.2
3
.0
1.05
1.00
0.95
2.
8
2.6
2.4
0.90
0.
8
5
100
120
40
60
8
0
20
-75
-25
25
75
175
T
J
(°C)
I
D
(A)
125
6/13
Doc ID 018507 Rev 1
STP210N75F6
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage
Figure 9.
Capacitance variations
AM090
3
4v1
AM090
3
5v1
V
G
S
C
(V)
(pF)
V
DD
=
3
7.5V
=120A
14000
12000
10000
8
000
12
10
8
I
D
Ci
ss
6
6000
4
2
0
4000
2000
0
Co
ss
60
Cr
ss
100
200
0
3
0
0
50
150
Q
g
(nC)
10 20
40 50
70
V
D
S
(V)
Figure 10.
Normalized gate threshold voltage
Figure 11.
Normalized on resistance vs
vs temperature
temperature
AM090
3
6v1
AM090
3
7v1
V
G
S
(th)
(norm)
R
D
S
(on)
(norm)
I
D
=250
µ
A
I
D
=60A
V
G
S
=10V
1.2
2.2
1.7
1.0
0.
8
0.6
1.2
0.7
0.2
0.4
0.2
-75
-75
-25
25
75
175
T
J
(°C)
-25
25
75
T
J
(°C)
175
125
125
Figure 12.
Source-drain diode forward
characteristics
AM090
38
v1
V
S
D
(V)
1.0
T
J
=-55°C
0.9
T
J
=25°C
0.
8
0.7
0.6
T
J
=175°C
0.5
0.4
0
10
20
3
0
40
50 I
S
D
(A)
Doc ID 018507 Rev 1
7/13
Test circuits
STP210N75F6
3
Test circuits
Figure 13.
Switching times test circuit for
resistive load
Figure 14.
Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k
Ω
2200
3
.
3
μ
F
R
L
μ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
D
R
G
V
G
S
2200
μ
F
D.U.
T
.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 15.
Test circuit for inductive load
switching and diode recovery times
Figure 16.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3
.
3
μ
F
V
DD
S
3
.
3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 17.
Unclamped inductive waveform
Figure 18.
Switching time waveform
t
on
td
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
8/13
Doc ID 018507 Rev 1
STP210N75F6
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
ECO
P
ACK is an ST trademark.
Doc ID 018507 Rev 1
9/13
Package mechanical data
STP210N75F6
Table 8.
Dim.
TO-220 type A mechanical data
mm
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
10/13
Doc ID 018507 Rev 1
STP210N75F6
Figure 19.
TO-220 type A drawing
Package mechanical data
00159
88
_typeA_Rev_
S
Doc ID 018507 Rev 1
11/13
Revision history
STP210N75F6
5
Revision history
Table 9.
Date
02-May-2011
Document revision history
Revision
Changes
1
First release.
12/13
Doc ID 018507 Rev 1
STP210N75F6
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Doc ID 018507 Rev 1
13/13
