STMicroelectronics-STP220N6F7
| Part # | STMicroelectronics-STP220N6F7 |
Download  | STMicroelectronics-STP220N6F7 |
STP220N6F7
N-
channel 60 V, 0.0021 Ω typ., 120 A, STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet – production data
Features
Order code
V
DS
R
DS(on)max
I
D
P
TOT
STP220N6F7
60 V
0.0024
Ω
120 A
237 W
Among the lowest R
DS(on)
on the market
Excellent figure of merit (FoM)
Low C
rss
/C
iss
ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
Figure 1: Internal schematic diagram
This N-channel Power MOSFET utilizes
STripFET™ F7 technolog
y with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1: Device summary
Order code
Marking
220N6F7
Package
Packaging
STP220N6F7
TO-220
Tube
October 2015
DocID026547 Rev 3
1/13
This is information on a product in full production.
Contents
STP220N6F7
Contents
2/13
DocID026547 Rev 3
STP220N6F7
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Parameter
Symbol
V
DS
Value
60
Unit
V
Drain-source voltage
V
GS
Gate-source voltage
±20
120
120
480
237
1
V
Drain current (continuous)
A
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed) T
C
= 25 °C
Total dissipation at T
C
= 25 °C
Single pulse avalanche energy
Operating junction temperature
Storage temperature
A
A
P
TOT
W
J
T
J
°C
°C
-55 to 175
T
stg
Notes:
(1)
Current limited by package
(2)
Pulse width is limited by safe operating area
(3)
Starting T
j
= 25°C, I
d
= 20 A, V
dd
= 50 V
Table 3: Thermal data
Symbol
R
thj-case
R
thj-amb
Parameter
Value
Unit
°C/W
°C/W
Thermal resistance junction-case max
Thermal resistance junction-ambient max
0.63
62.5
DocID026547 Rev 3
3/13
Electrical characteristics
STP220N6F7
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4: On /off states
Uni
Symbol
Parameter
Drain-source
Test conditions
V
GS
= 0, I
D
= 1 mA
Min.
Typ.
Max.
t
V
(BR)DSS
60
V
breakdown voltage
V
GS
= 0, V
DS
= 60 V
1
µA
µA
Zero gate voltage
drain current
I
DSS
V
GS
= 0, V
DS
= 60
V,
T
C
= 125
°C
100
Gate-body leakage
current
I
GSS
V
DS
= 0, V
GS
= + 20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 60 A
100
4
nA
V
Gate threshold
voltage
V
GS(th)
R
DS(on)
2
Static drain-source
on- resistance
0.002 0.002
Ω
1
4
Table 5: Dynamic
Test conditions
Uni
t
Symbol
Parameter
Min.
Typ.
Max.
C
iss
Input capacitance
Output capacitance
–
–
6400
3880
–
–
pF
pF
C
oss
V
GS
= 0, V
DS
= 25 V,
f = 1 MHz
Reverse transfer
capacitance
C
rss
–
175
–
pF
Q
g
Total gate charge
V
DD
= 30 V, I
D
= 120 A,
V
GS
= 10 V
–
–
100
36
–
–
nC
nC
Q
gs
Gate-source charge
Q
gd
Gate-drain charge
–
24
–
nC
Table 6: Switching times
Test conditions
Max
.
Symbol
Parameter
Min.
Typ.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
V
DD
= 30 V, I
D
= 60 A,
–
–
–
–
33
103
54
–
–
–
–
ns
ns
ns
ns
R
G
= 4.7
Ω, V
GS
= 10 V
Turn-off delay time
Fall time
29
4/13
DocID026547 Rev 3
STP220N6F7
Electrical characteristics
Min Typ Max Un
Table 7: Source drain diode
Test conditions
Symbol
Parameter
.
–
–
–
.
.
it
Forward on voltage
V
GS
= 0, I
SD
= 120 A
–
1.1
V
t
rr
Reverse recovery time
I
SD
= 120 A,
69
104
ns
nC
di/dt = 100 A/µs
Q
rr
Reverse recovery charge
V
DD
= 48 V, T
J
= 150 °C
I
RRM
Reverse recovery current
–
3
A
Notes:
(1)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID026547 Rev 3
5/13
Electrical characteristics
STP220N6F7
2.1
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
GIPG0
5
1
1
20141133MT
I
D
(A)
δ
0.2
0.1
0.05
0.02
0.01
100
10
10µs
100µs
1ms
Tj=175°C
T
c
=25°C
Single pulse
1
V
DS
(V)
0.1
1
10
Figure 4: Output characteristics
Figure 5: Transfer characteristics
GIPG0
5
1
120141150MT
I
D
GIPG0
5
1
1
20141159MT
I
D
(A)
400
(A)
V
G
S
=8, 9, 10V
V
DS
=4V
350
300
250
350
300
250
200
150
100
7V
200
150
100
6V
50
0
50
0
5V
4
6
8
V
DS
(V)
0
2
2
4
6
8
V
G
S
(V)
0
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
GIPG0
5
1
1
20141204
M
T
GIPG0
5
1
1
20141354
M
T
V
GS
R
DS(on)
(V)
(m
Ω
)
V
DS
=30V
V
G
S
=10V
12
2.22
2.18
2.14
I
D
=120 A
10
8
6
2.10
2.06
2.02
4
2
0
20
40
60
Q
g
(nC)
80 100
120
I
D
(A)
0
20
60
100
120
0
40
80
6/13
DocID026547 Rev 3
STP220N6F7
Electrical characteristics
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 8: Capacitance variations
GIPG0
5
1
1
20141219
M
T
C
(pF)
GIPG0
5
1
1
20141232
M
T
V
GS(th)
(norm)
I
D
=250µ A
1.10
1.00
0.90
10000
1000
Ciss
Coss
0.80
0.70
100
10
0.60
Crss
0.50
0.40
0.1
1
10
V
DS
(V)
-75
-25
25
75
T
J
(°C)
175
125
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs
temperature
GIPG0
5
1
1
20141240
M
T
R
DS(on)
GIPG0
5
1
120141245
M
T
V
(BR)DSS
(norm)
(norm)
V
G
S
=10V
I
D
=1
m
A
I
d
=6
0
A
1.80
1.04
1.60
1.40
1.20
1.00
1.02
1.00
0.98
0.96
0.80
0.60
-75
-75
-25
25
75
175
T
J
(°C)
-25
25
75
125
125
175
T
J
(°C)
Figure 12: Source-drain diode forward characteristics
GIPG0
5
1
120141326
M
T
(V)
V
SD
1.00
T
J
=-55°C
0.90
0.80
0.70
T
J
=25°C
T
J
=175°C
70
0.60
0.50
10
30
50
I
SD
(A)
110
90
DocID026547 Rev 3
7/13
Test circuits
STP220N6F7
3
Test circuits
Figure 13: Test circuit for resistive load
switching times
Figure 14: Test circuit for gate charge
behavior
Figure 15: Test circuit for inductive load
switching and diode recovery times
Figure 16: Unclamped inductive load test
circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
8/13
DocID026547 Rev 3
STP220N6F7
Package mechanical
data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
DocID026547 Rev 3
9/13
Package mechanical
data
STP220N6F7
4.1
TO-220 package mechanical data
Figure 19: TO-220 type A package outline
10/13
DocID026547 Rev 3
STP220N6F7
Package mechanical
data
Table 8: TO-220 type A mechanical data
mm
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
Typ.
Max.
4.60
0.88
1.70
0.70
15.75
A
b
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
DocID026547 Rev 3
11/13
Revision history
STP220N6F7
5
Revision history
Table 9: Document revision history
Changes
Date
Revision
17-Jun-2014
1
Initial release.
Updated title and features in cover page.
Updated Electrical rating and Electrical characteristics.
Added Electrical characteristics (curves) .
Minor text changes.
05-Nov-2014
07-Oct-2015
2
3
Document status promoted from preliminary to production data.
12/13
DocID026547 Rev 3
STP220N6F7
IMPORTANT NOTICE
–
PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications
, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST
products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of or
der
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the
design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics
–
All rights reserved
DocID026547 Rev 3
13/13
