STMicroelectronics-STP23N80K5
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STP23N80K5
N-channel 800 V, 0.23
Ω typ., 16 A MDmesh™ K5
Power MOSFET in a TO-220 package
Datasheet – production data
Features
Order code
V
DS
R
DS(on)
max.
I
D
P
TOT
STP23N80K5 800
V
0.28
Ω
16 A
190 W
Industry’s lowest R
DS(on)
x area
Industry’s best figure of merit (FoM)
Ultra low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Figure 1: Internal schematic diagram
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Table 1: Device summary
Order code
Marking
Package
Packing
STP23N80K5
23N80K5
TO-220
Tube
October 2015
DocID028451 Rev 1
1/13
This is information on a product in full production.
Contents
STP23N80K5
Contents
2/13
DocID028451 Rev 1
STP23N80K5
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
±30
16
Unit
V
GS
Gate-source voltage
V
Drain current (continuous) at T
case
= 25 °C
Drain current (continuous) at T
case
= 100 °C
Drain current (pulsed)
I
D
A
10
64
A
P
TOT
T
stg
Total dissipation at T
case
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
190
4.5
50
W
V/ns
°C
Storage temperature
-55 to 150
T
j
Operating junction temperature
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
I
≤ 16 A, di/dt=100 A/μs; V
DS
peak < V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
.
SD
(3)
V
≤ 640 V
DS
Table 3: Thermal data
Parameter
Symbol
R
thj-case
R
thj-amb
Value
0.66
30
Unit
Thermal resistance junction-case
Thermal resistance junction-ambient
°C/W
Table 4: Avalanche characteristics
Parameter
Symbol
Value
5
Unit
A
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
400
mJ
Notes:
(1)
Pulse width limited by T
jmax
(2)
starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
.
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3/13
Electrical characteristics
STP23N80K5
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 5: Static
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 1 mA
800
V
V
GS
= 0 V, V
DS
= 800 V
1
Zero gate voltage drain
current
I
DSS
µA
V
GS
= 0 V, V
DS
= 800 V,
T
case
= 125 °C
50
I
GSS
Gate-body leakage current
V
DS
= 0 V, V
GS
= ±20 V
±10
5
µA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100 µA
3
4
Static drain-source on-
resistance
R
DS(on)
V
GS
= 10 V, I
D
= 8 A
0.23 0.28
Ω
Table 6: Dynamic
Test conditions
Symbol
C
iss
Parameter
Input capacitance
Output capacitance
Min. Typ. Max. Unit
–
–
1000
65
–
–
C
oss
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
pF
pF
Reverse transfer
capacitance
C
rss
–
–
–
1.5
165
59
–
–
–
Equivalent output
capacitance
V
DS
= 0 to 640 V, V
GS
= 0 V
Equivalent output
capacitance
V
DS
= 0 to 640 V, V
GS
= 0 V
f = 1 MHz, I
D
= 0 A
R
G
Q
g
Intrinsic gate resistance
Total gate charge
–
–
–
–
4.7
33
6
–
–
–
–
Ω
V
DD
= 640 V, I
D
= 16 A,
Q
gs
Q
gd
Gate-source charge
Gate-drain charge
nC
25
Notes:
(1)
Time related is defined as a constant equivalent capacitance giving the same charging time as C
OSS
when V
DS
increases from 0 to 80% V
DSS
.
(2)
Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
OSS
when
V
DS
increases from 0 to 80% V
DSS
Table 7: Switching times
Symbol
t
d(on)
t
r
Parameter
Turn-on delay time
Rise time
Test conditions
Min. Typ. Max. Unit
V
DD
= 400 V, I
D
= 8 A
–
–
–
14
9
–
–
–
R
G
= 4.7
Ω, V
GS
= 10 V (see
ns
t
d(off)
Turn-off delay time
48
t
f
Fall time
–
9
–
4/13
DocID028451 Rev 1
STP23N80K5
Electrical characteristics
Min. Typ. Max. Unit
Table 8: Source-drain diode
Test conditions
Symbol
I
SD
Parameter
Source-drain current
–
–
16
64
A
A
Source-drain current
(pulsed)
t
rr
Forward on voltage
V
GS
= 0 V, I
SD
= 16 A
–
–
–
1.5
V
Reverse recovery time
Reverse recovery charge
I
SD
= 16 A, di/dt = 100 A/µs,
410
7
ns
µC
Q
rr
I
RRM
Reverse recovery current
–
34
A
t
rr
Reverse recovery time
I
SD
= 16 A, di/dt = 100 A/µs,
V
DD
= 60 V, T
j
= 150 °C (see
–
–
650
10
ns
Q
rr
Reverse recovery charge
µC
I
RRM
Reverse recovery current
–
32
A
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
±30
V
(BR)GSO
Gate-source breakdown voltage
I
GS
= ±1 mA, I
D
= 0 A
–
–
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
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Electrical characteristics
STP23N80K5
2.1
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
K
δ=0.5
0.2
0.1
10
-1
0.05
0.02
Z
= K*R
thj-c
p
th
δ= t
/
Ƭ
0.01
Single pulse
t
p
Ƭ
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t
P
(s)
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
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STP23N80K5
Electrical characteristics
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 8: Capacitance variations
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs
temperature
Figure 12: Maximum avalanche energy vs temperature
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7/13
Test circuits
STP23N80K5
3
Test circuits
Figure 13: Test circuit for resistive load
switching times
Figure 14: Test circuit for gate charge
behavior
Figure 15: Test circuit for inductive load
switching and diode recovery times
Figure 16: Unclamped inductive load test
circuit
Figure 18: Switching time waveform
Figure 17: Unclamped inductive waveform
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STP23N80K5
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
DocID028451 Rev 1
9/13
Package information
STP23N80K5
4.1
TO-220 package information
Figure 19: TO-220 type A package outline
10/13
DocID028451 Rev 1
STP23N80K5
Package information
Table 10: TO-220 type A mechanical data
mm
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
Typ.
Max.
4.60
0.88
1.70
0.70
15.75
A
b
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
DocID028451 Rev 1
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Revision history
STP23N80K5
5
Revision history
Table 11: Document revision history
Revision
Date
Changes
First release.
06-Oct-2015
1
12/13
DocID028451 Rev 1
STP23N80K5
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DocID028451 Rev 1
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