STMicroelectronics-STP240N10F7

STP240N10F7  

N-channel 100

V

,

2

.85 m

Ω

typ., 110 A STripFET™ F7  

Power MOSFET in a TO-220 package  

Datasheet  

–

production data  

Features  

Order code  

V

DS  

R

DS(on)

max.  

I

D  

TAB  

STP240N10F7  

100 V  

3.2 m

Ω

 

110 A  

•

Ultra low on-resistance  

•

100% avalanche tested  

3

2

1

Applications  

TO-220  

•

High current switching applications  

Description  

This N-channel Power MOSFET utilizes the  

STripFET™ F7 technology with an enhanced  

trench gate structure that results in very low on-  

state resistance, while also reducing internal  

capacitance and gate charge for faster and more  

efficient switching.  

Figure 1. Internal schematic diagram  

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Table 1. Device summary  

Order code  

Marking  

Package  

TO-220  

Packaging  

STP240N10F7  

240N10F7  

Tube  

July 2014  

DocID023934 Rev 3  

1/13  

This is information on a product in full production.  

Contents  

STP240N10F7  

Contents  

2/13  

DocID023934 Rev 3  

STP240N10F7  

Electrical ratings  

1

Electrical ratings  

Table 2. Absolute maximum ratings  

Parameter Value  

Symbol  

Unit  

V

DS  

V

GS  

Drain-source voltage  

100  

± 20  

110  

110  

440  

300  

500  

V

V

Gate-source voltage  

(1)  

I

D  

Drain current (continuous) at T

C

= 25°C  

Drain current (continuous) at T

C

=100°C  

Drain current (pulsed)  

A

(1)  

I

D  

A

(2)  

I

DM  

A

P

TOT  

T

o

tal dissipation at T

C

= 25°C  

Single pulse avalanche energy  

Operating junction temperature  

Storage temperature  

W

mJ  

(3)  

E

AS  

T

j  

– 55 to 175  

°C  

T

stg  

1. Current

 

limited by package.  

2. Pulse

 

width limited by safe operating area.  

3. Starting

 

T =25°C, I

 

=45A, V

 

=50V  

j

d

dd  

Table 3. Thermal data  

Parameter  

Symbol  

Value  

Unit  

R

thj-case

Thermal resistance junction-case  

0.5  

°C/W  

Thermal resistance junction-ambient  

R

thj-amb  

max  

62.5  

°C/W  

DocID023934 Rev 3  

3/13  

13  

Electrical characteristics  

STP240N10F7  

2

Electrical characteristics  

(T

CASE

= 25 °C unless otherwise specified).  

Table 4. On/off states  

Symbol  

Parameter  

Test conditions  

Min.  

Typ.  

Max.  

Unit  

Drain-source breakdown  

voltage  

V

(BR)DSS  

V

GS

= 0, I

D

= 250 µA  

100  

V

V

V

1

µA  

µA  

Zero gate voltage drain  

current  

I

DSS  

100  

T

C

= 125°C  

I

GSS  

Gate body leakage current

 

V

DS

= 0, V

GS

= +20 V  

100  

4.5  

nA  

V

V

GS(th)  

Gate threshold voltage  

V

DS

= V

GS

, I

D

= 250 µA  

V

GS

= 10

V

,

I

D

= 60 A  

2.5  

Static drain-source  

on-resistance  

R

DS(on)  

2.85  

3.2  

m

Ω  

Table 5. Dynamic  

Test conditions  

Symbol  

Parameter  

Min.  

Typ.  

Max.  

Unit  

pF  

C

iss  

C

oss  

C

rss  

Input capacitance  

Output capacitance  

–

–

–

11550  

2950  

217  

–

–

–

V

pF  

pF  

f = 1 MHz  

Reverse transfer  

capacitance  

Q

g  

Q

gs  

Q

gd  

T

o

tal gate charge  

Gate-source charge  

Gate-drain charge  

–

–

–

160  

48  

–

–

–

nC  

nC  

nC  

V

DD

= 50 V, I

D

= 110 A,  

V

(see

)  

38  

Table 6. Switching times  

Test conditions  

Symbol  

Parameter  

Min.  

Typ.  

Max.  

Unit  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on delay time  

Rise time  

–

–

–

–

49  

–

–

–

–

ns  

ns  

ns  

ns  

V

DD

= 50 V, I

D

= 90 A  

139  

110  

112  

R

G

= 4.7

Ω

V

GS

= 10 V  

(see

,  

)  

Turn-off delay time  

Fall time  

4/13  

DocID023934 Rev 3  

STP240N10F7  

Electrical characteristics  

Table 7. Source drain diode  

Test conditions  

Symbol  

Parameter  

Min.  

Typ.  

Max.  

Unit  

I

SD  

Source-drain current  

–

110  

A

Source-drain current  

(pulsed)  

(1)  

I

SDM  

–

440  

1.2  

A

(2)  

V

SD  

Forward on voltage  

V

GS

=0, I

SD

=110 A  

–

–

–

V

t

rr  

Reverse recovery time  

I

SD

=110 A,  

108  

315  

ns  

nC  

di/dt = 100 A/µs,  

V

DD

=80 V, Tj=150°C  

Q

rr  

Reverse recovery charge  

I

RRM  

Reverse recovery current  

–

5.8  

A

(see

)  

1. Pulse

 

width limited by safe operating area.  

2. Pulse

 

duration = 300µs, duty cycle 1.5%  

DocID023934 Rev 3  

5/13  

13  

Electrical characteristics  

STP240N10F7  

2.1  

Electrical characteristics (curves)  

Figure 2. Safe operating area  

Figure 3. Thermal impedance  

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Figure 4. Output characteristics  

Figure 5. Transfer characteristics  

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Figure 6. Gate charge vs gate-source voltage  

Figure 7. Static drain-source on-resistance  

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6/13  

DocID023934 Rev 3  

STP240N10F7  

Electrical characteristics  

Figure 8. Capacitance variations  

Figure 9. Normalized gate threshold voltage vs  

temperature  

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Figure 10. Normalized on-resistance vs  

temperature  

Figure 11. Normalized V

(BR)DSS

vs temperature  

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Figure 12. Source-drain diode forward  

characteristics  

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DocID023934 Rev 3  

7/13  

13  

Test circuits  

STP240N10F7  

3

Test circuits  

Figure 13. Switching times test circuit for  

resistive load  

Figure 14. Gate charge test circuit  

V

DD  

12V  

47k

Ω

 

1k

Ω  

100nF  

2200  

μ

F  

3.3  

μ

F  

R

L  

I

G

=CONST  

V

DD  

100

Ω  

V

i

=20V=V

GMAX  

D.U.T.  

V

D  

R

G  

V

GS  

2200  

μ

F  

D.U.T.  

V

G  

2.7k

Ω  

47k

Ω  

P

W  

1k

Ω  

P

W  

AM01468v1  

AM01469v1  

Figure 15. Test circuit for inductive load  

switching and diode recovery times  

Figure 16. Unclamped inductive load test circuit  

L

A

A

A

B

D

S

FAST  

DIODE  

L=100

μ

H  

V

D  

G

2200  

μ

F  

D.U.T.  

B

3.3  

μ

F  

V

DD  

3.3  

μ

F  

1000  

μ

F  

B

V

DD  

25  

Ω

I

D  

D

G

R

G  

S

V

i  

D.U.T.  

P

w  

AM01470v1  

AM01471v1  

Figure 17. Unclamped inductive waveform  

Figure 18. Switching time waveform  

t

on  

t

off  

td

off  

V

(BR)DSS  

t

r  

t

f  

td

on  

V

D  

90%  

10%  

90%  

I

DM  

10%  

V

GS  

V

DS  

I

D  

0

0

V

DD  

V

DD  

90%  

10%  

AM01472v1  

AM01473v1  

8/13  

DocID023934 Rev 3  

STP240N10F7  

Package mechanical data  

4

Package mechanical data  

In order to meet environmental requirements, ST offers these devices in different grades of  

ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK

®  

specifications, grade definitions and product status are available at:

.  

ECOPACK

®

is an ST trademark.  

DocID023934 Rev 3  

9/13  

13  

Package mechanical data  

STP240N10F7  

Figure 19. TO-220 type A drawing  

ꢀꢀꢁꢄꢏꢎꢎBWSH$B5HYB7

 

10/13  

DocID023934 Rev 3  

STP240N10F7  

Package mechanical data  

Table 8. TO-220 type A mechanical data  

mm  

Dim.  

Min.  

Typ.  

Max.  

A

b

4.40  

0.61  

1.14  

0.48  

15.25  

4.60  

0.88  

1.70  

0.70  

15.75  

b1  

c

D

D1  

E

1.27  

10  

10.40  

2.70  

5.15  

1.32  

6.60  

2.72  

14  

e

2.40  

4.95  

1.23  

6.20  

2.40  

13  

e1  

F

H1  

J1  

L

L1  

L20  

L30  

øP  

Q

3.50  

3.93  

16.40  

28.90  

3.75  

2.65  

3.85  

2.95  

DocID023934 Rev 3  

11/13  

13  

Revision history  

STP240N10F7  

5

Revision history  

Table 9. Document revision history  

Revision Changes  

Date  

19-Nov-2012  

08-Oct-2013  

1

2

Initial version.  

Updated V

GS(th)

typical value in

.  

– Document status promoted from preliminary data to  

production data  

– Modified: title  

– Modified: I

D

values in cover page  

– Modified: I

D

and I

DM

values in

– Added: E

AS

value and

note

in

– Modified: I

DSS

, I

GSS

and V

GS(th)

values in

– Modified: the entire typical values in

and

– Modified: max values and I

SD

values  

– Added:

– Updated:

– Minor text changes  

14-Jul-2014  

3

12/13  

DocID023934 Rev 3  

STP240N10F7  

IMPORTANT NOTICE – PLEASE READ CAREFUL

L

Y  

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T

.

A

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.  

© 2014 STMicroelectronics – All rights reserved  

DocID023934 Rev 3  

13/13  

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