STMicroelectronics-STP24N60M6
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STP24N60M6
Datasheet
N-channel 600 V, 162 mΩ typ., 17 A, MDmesh™ M6 Power MOSFET
in a TO-220 package
Features
V
R
max.
I
D
Order code
STP24N60M6
DS
DS(on)
TAB
600 V
190 mΩ
17 A
•
•
•
•
•
Reduced switching losses
3
2
Lower R
DS(on)
per area vs previous generation
Low gate input resistance
100% avalanche tested
1
TO-220
Zener-protected
D(2, TAB)
Applications
•
•
•
Switching applications
G(1)
LLC converters
Boost PFC converters
S(3)
AM01475V1
Description
The new MDmesh™ M6 technology incorporates the most recent advancements to
the well-known and consolidated MDmesh family of SJ MOSFE
T
s
.
STMicroelectronics builds on the previous generation of MDmesh devices through its
new M6 technology, which combines excellent R
DS(on)
per area improvement with
one of the most effective switching behaviors available, as well as a user-friendly
experience for maximum end-application efficiency.
Product status link
Product summary
Order code
STP24N60M6
Marking
Package
Packing
24N60M6
TO-220
Tube
DS12716
–
Rev 1
–
August 2018
For further information contact your local STMicroelectronics sales office.
STP24N60M6
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
±25
17
Unit
V
Gate-source voltage
V
GS
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
= 25 °C
case
case
I
A
D
= 100 °C
10.7
52.5
130
15
I
A
DM
P
T
o
tal dissipation at T
= 25 °C
case
W
TOT
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
V/ns
°C
50
T
stg
-55 to 150
T
Operating junction temperature range
j
1. Pulse
width is limited by safe operating area.
2.
3.
I
≤ 17 A, di/dt = 400 A/μs, V
< V
, V
= 400 V
DD
SD
DS
(BR)DSS
V
≤ 480 V
DS
Table 2.
Thermal data
Parameter
Symbol
Value
0.96
Unit
°C/W
°C/W
R
Thermal resistance junction-case
Thermal resistance junction-ambient
thj-case
R
thj-amb
62.5
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or non-repetitive
I
3.2
A
AR
(pulse width limited by T
)
Jmax
Single pulse avalanche energy
(starting T
= 25 °C, I
= I
, V
= 50 V)
E
250
mJ
AS
j
D
AR
DD
DS12716
–
Rev 1
page 2/13
STP24N60M6
Electrical characteristics
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified).
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
V
V
V
T
= 0
V
, I
= 1
m
A
Drain-source breakdown voltage
600
V
(BR)DSS
GS
GS
GS
D
= 0
V
, V
=
6
00 V
1
DS
I
= 0
V
, V
=
6
00
V
,
Zero gate voltage drain current
µA
DSS
DS
100
case
I
V
= 0
V
, V
=
±
25 V
GS
Gate-body leakage current
Gate threshold voltage
±5
µA
V
GSS
DS
DS
V
V
I
= V
, I
= 250 µA
3.25
4
4.75
190
GS(th)
DS(on)
GS
D
R
= 8.5 A, V
= 10 V
GS
Static drain-source on-resistance
162
mΩ
D
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ.
960
76
Max.
Unit
C
iss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
C
oss
V
V
= 100
V
, f = 1
M
Hz, V
= 0 V
Output capacitance
pF
DS
GS
C
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
4.5
181
5
rss
= 0 to 480
V
, V
= 0 V
C
oss eq.
pF
Ω
DS
GS
R
f = 1 MHz, I
= 0 A
D
G
Q
V
V
= 480 V, I
= 17 A,
23
g
DD
GS
D
= 0 to 10 V
Q
Gate-source charge
4.8
gs
nC
Q
Gate-drain charge
–
12.8
–
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Min.
Typ.
17.7
32
Max.
Unit
t
V
= 300
V
, I
=
8
.5 A,
–
–
–
–
–
–
d(on)
DD
D
R
G
= 4.7 Ω, V
= 10 V
t
GS
Rise time
r
ns
t
Turn-off delay time
38.3
d(off)
t
Fall time
–
9
–
f
DS12716
–
Rev 1
page 3/13
STP24N60M6
Electrical characteristics
Table 7.
Source-drain diode
Test conditions
Symbol
Parameter
Source-drain current
Min.
Typ.
Max.
17
Unit
A
I
–
–
–
–
–
SD
I
Source-drain current (pulsed)
Forward on voltage
52.5
1.6
A
SDM
V
I
I
= 17 A, V
= 0 V
V
SD
SD
GS
SD
t
= 17 A, di/dt = 100 A/µs,
= 60 V
Reverse recovery time
Reverse recovery charge
225
2.3
ns
µC
rr
V
Q
DD
rr
I
Reverse recovery current
–
20.4
A
RRM
t
I
V
= 17 A, di/dt = 100 A/µs,
Reverse recovery time
–
–
387
ns
rr
SD
= 60
V
,
DD
Q
Reverse recovery charge
3.85
µC
rr
T =
150 °C
j
I
Reverse recovery current
–
25.1
A
RRM
1. Pulse
width is limited by safe operating area.
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
DS12716
–
Rev 1
page 4/13
STP24N60M6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 2.
Thermal impedance
Figure 1.
Safe operating area
GADG300720181350SOA
I
D
(A)
is
Operation in this area
limited by R
DS(on)
10
2
10
1
10
0
t
p
= 10µs
t
p
= 100µs
t
p
= 1ms
t
p
= 10ms
10
-1
10
-2
T
j
≤
150 °C
T
c
= 25°C
single pulse
10
-1
10
0
10
1
10
2
V
DS
(V)
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
GADG200720180952OCH
GADG200720180952TCH
I
D
I
D
(A)
(A)
V
GS
= 9, 10 V
V
GS
= 8 V
50
40
30
20
50
40
30
20
V
DS
= 16 V
V
GS
= 7 V
10
0
10
0
V
GS
= 6 V
10 12 14 16 V
DS
(V)
0
2
4
6
8
2
3
4
5
6
7
8
9
V
GS
(V)
Figure 5.
Gate charge vs gate-source voltage
Figure 6.
Static drain-source on-resistance
GADG200720180952QVG
GADG010820181133RID
V
GS
(V)
V
DS
(V)
R
DS(on)
(mΩ)
178
12
10
8
600
500
400
300
200
100
V
GS
= 10V
V
DS
174
170
166
162
158
V
DD
= 480 V
I
D
= 17 A
6
4
2
0
154
150
0
0
4
8
12
16
20
24
Q
g
(nC)
0
2
4
6
8
10 12 14 16 I
D
(A)
DS12716
–
Rev 1
page 5/13
STP24N60M6
Electrical characteristics (curves)
Figure 7.
Capacitance variations
Figure 8.
Output capacitance stored energy
E
OSS
(µJ)
10
GADG190720181455CVR
GADG190720181457EOS
C
(pF)
9
8
7
6
5
4
3
2
10
3
10
2
C
ISS
C
OSS
C
RSS
f = 1 MHz
10
1
10
0
1
0
0
10
-1
10
0
10
1
10
2
V
DS
(V)
100 200 300 400 500 600
V
DS
(V)
Figure 9.
Normalized gate threshold voltage vs
temperature
Figure 10.
Normalized on-resistance vs temperature
GADG190720181456RON
R
DS(on)
(norm.)
GADG190720181456VTH
V
GS(th)
(norm.)
V
GS
= 10 V
2.2
I
D
= 250 µA
1.1
1.8
1.4
1
1.0
0.9
0.8
0.6
0.2
0.7
0.6
-75
-25
25
75
125
T
j
(°C)
-75
-25
25
75
125
T
j
(°C)
Figure 11.
Normalized V
(BR)DSS
vs temperature
Figure 12.
Source-drain diode forward characteristics
GADG010820181135SDF
GADG190720181457BDV
V
SD
(V)
V
(BR)DSS
(norm.)
1.1
I
D
= 1 mA
1.08
T
j
= -50 °C
1
1.04
1.00
0.96
0.9
T
j
= 25 °C
0.8
T
j
= 150 °C
0.7
0.92
0.88
0.6
0.5
0
2
4
6
8
10 12 14 16 I
SD
(A)
-75
-25
25
75
125
T
j
(°C)
DS12716
–
Rev 1
page 6/13
STP24N60M6
Test circuits
3
Test circuits
Figure 13.
Test circuit for resistive load switching times
Figure 14.
Test circuit for gate charge behavior
V
DD
RL
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v10
AM01468v1
Figure 15.
Test circuit for inductive load switching and
diode recovery times
Figure 16.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
25 Ω
I
D
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 18.
Switching time waveform
Figure 17.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
AM01472v1
10%
AM01473v1
DS12716
–
Rev 1
page 7/13
STP24N60M6
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
DS12716
–
Rev 1
page 8/13
STP24N60M6
TO-220 type A package information
4.1
TO-220 package information
Figure 19.
TO-220 type A package outline
0015988_typeA_Rev_21
DS12716
–
Rev 1
page 9/13
STP24N60M6
TO-220 type A package information
Table 8.
TO-220 type A package mechanical data
mm
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
Typ.
Max.
4.60
0.88
1.55
0.70
15.75
A
b
b1
c
D
D1
E
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
16.40
28.90
3.75
2.65
3.85
2.95
DS12716
–
Rev 1
page 10/13
STP24N60M6
Revision history
Table 9.
Document revision history
Date
01-Aug-2018
Version
Changes
1
Initial release.
DS12716
–
Rev 1
page 11/13
STP24N60M6
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
TO-220 package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
DS12716
–
Rev 1
page 12/13
STP24N60M6
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
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T
.
A
ll other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS12716
–
Rev 1
page 13/13
