STMicroelectronics-STP25N60M2-EP
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STP25N60M2-EP
Datasheet
N-channel 600
V
,
0
.175 Ω typ., 18 A MDmesh™ M2 EP
Power MOSFET in a TO-220 package
Features
V
at T
max.
R
max.
I
D
Order code
DS
J
DS(on)
TAB
STP25N60M2-EP
650 V
0.188 Ω
18 A
•
•
•
•
•
Extremely low gate charge
3
2
Excellent output capacitance (C
OSS
) profile
Very low turn-off switching losses
100% avalanche tested
1
TO-220
Zener-protected
D(2, TAB)
Applications
•
•
Switching applications
G(1)
T
a
ilored for Very high frequency converters (f > 150 kHz)
Description
S(3)
AM01475V1
This device is an N-channel Power MOSFET developed using MDmesh™
M2 enhanced performance (EP) technology. Thanks to its strip layout and an
improved vertical structure, the device exhibits low on-resistance, optimized switching
characteristics with very low turn-off switching losses, rendering it suitable for the
most demanding very high frequency converters.
Product status link
Product summary
Order code
Marking
STP25N60M2-EP
25N60M2EP
TO-220
Package
Packing
Tube
DS10739
–
Rev 4
–
May 2018
For further information contact your local STMicroelectronics sales office.
STP25N60M2-EP
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
±25
18
Unit
V
V
Gate-source voltage
GS
I
Drain current (continuous) at T
= 25 °C
A
D
D
C
I
Drain current (continuous) at T
= 100 °C
11.3
72
A
C
I
Drain current (pulsed)
A
DM
P
T
o
tal dissipation at T
= 25 °C
150
15
W
TOT
C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
V/ns
V/ns
50
T
Storage temperature range
stg
-55 to 150
°C
T
Operating junction temperature range
j
1. Pulse
width limited by safe operating area.
2.
3.
I
≤ 18 A, di/dt ≤ 400 A/µs, V
< V
, V
= 400 V.
(BR)DSS DD
SD
DS peak
V
≤ 480 V
DS
Table 2.
Thermal data
Parameter
Symbol
Value
0.83
Unit
°C/W
°C/W
R
Thermal resistance junction-case
Thermal resistance junction-ambient
thj-case
R
thj-amb
62.5
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
3.5
Unit
A
I
Avalanche current, repetitive or not repetitive (pulse width limited by T
)
jmax
AR
E
Single pulse avalanche energy (starting T
= 25 °C, I
= I
, V
= 50 V)
j D
AR DD
200
mJ
AS
DS10739
–
Rev 4
page 2/14
STP25N60M2-EP
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
V
V
V
= 0
V
, I
= 1
m
A
Drain-source breakdown voltage
600
(BR)DSS
GS
GS
GS
D
= 0
V
, V
=
6
00 V
1
µA
DS
I
Zero gate voltage drain current
DSS
V
T
= 0
V
, V
=
6
00 V,
DS
100
µA
C
I
V
V
V
= 0
V
, V
=
±
25 V
Gate-body leakage current
Gate threshold voltage
±10
4.75
µA
V
GSS
DS
GS
V
= V
, I
= 250 µA
3.25
4
GS(th)
DS(on)
DS
GS
GS
D
R
= 10
V
, I
= 9 A
D
Static drain-source on-resistance
0.175
0.188
Ω
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ.
1090
56
Max.
Unit
pF
pF
pF
pF
Ω
C
iss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
C
oss
V
V
= 100
V
, f = 1
M
Hz, V
= 0 V
Output capacitance
DS
GS
C
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
T
o
tal gate charge
1.6
255
7
rss
= 0 to 480
V
, V
= 0 V
C
oss eq.
DS
GS
R
f = 1 MHz, I
= 0 A
D
G
Q
V
V
= 480
V
, I
=
1
8 A,
29
nC
nC
g
DD
D
= 0 to 10 V
Q
GS
Gate-source charge
6
gs
Q
Gate-drain charge
–
12
–
nC
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
.
DSS
Table 6.
Switching energy
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
= 400
V
, I
= 2
A
,
D
DD
–
7
–
µJ
R
= 4.7 Ω, V
= 10 V
GS
G
Turn-off energy
(from 90% V
to 0% I
)
E
(off)
GS
D
V
= 400 V, I
= 4 A,
D
DD
–
8
–
µJ
R
G
= 4.7 Ω, V
= 10 V
GS
DS10739
–
Rev 4
page 3/14
STP25N60M2-EP
Electrical characteristics
Table 7.
Switching times
Test conditions
Symbol
Parameter
Turn-on delay time
Min.
Typ.
15
Max.
Unit
ns
t
V
= 300
V
, I
= 9
A
,
–
–
–
–
–
–
d(on)
DD
D
R
G
= 4.7 Ω, V
= 10 V
t
GS
Rise time
10
ns
r
t
Turn-off delay time
61
ns
d(off)
t
Fall time
–
16
–
ns
f
Table 8.
Source drain diode
Test conditions
Symbol
Parameter
Min.
Typ.
Max.
18
Unit
A
I
Source-drain current
–
–
–
–
–
–
–
–
SD
I
Source-drain current (pulsed)
Forward on voltage
72
A
SDM
V
V
= 0
V
, I
=
1
8 A
SD
1.6
V
GS
SD
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
360
5
ns
µC
A
I
= 18 A, di/dt = 100 A/µs,
SD
V
DD
Q
rr
I
28
RRM
t
I
= 18 A, di/dt = 100 A/µs,
445
6.5
ns
µC
rr
SD
V
= 100
V
, T
=
1
50 °C
j
DD
Q
rr
I
Reverse recovery current
–
29
A
RRM
1. Pulse
width is limited by safe operating area
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
DS10739
–
Rev 4
page 4/14
STP25N60M2-EP
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
I
D
(A)
GIPG011220141441ALS
10
1
10µs
100µs
1ms
10ms
T
j
=150°C
T
C
=25°C
Single pulse
0.1
0.1
10
V
DS
(V)
1
100
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
GIPG090220181022OCH
GIPG090220181022TCH
I
D
I
D
(A)
(A)
V
GS
= 8, 9, 10 V
V
DS
=16 V
40
32
24
16
40
32
24
16
V
GS
=7 V
V
GS
=6 V
8
0
8
0
V
GS
=5 V
16
0
4
8
12
V
DS
(V)
3
4
5
6
7
V
GS
(V)
Figure 5.
Gate charge vs gate-source voltage
Figure 6.
Static drain-source on-resistance
GADG260320181223QVG
GIPG090220181138RID
V
GS
(V)
V
DS
(V)
R
DS(on)
(Ω)
V
DD
= 480
V
,
I
D
= 18 A
V
GS
= 10 V
0.185
12
10
8
600
500
400
300
200
100
V
DS
0.18
6
0.175
4
0.17
2
0
0
0.165
0
5
10
15
20
25
30
Q
g
(nC)
0
3
6
9
12
15
18
I
D
(A)
DS10739
–
Rev 4
page 5/14
STP25N60M2-EP
Electrical characteristics (curves)
Figure 7.
Capacitance variations
Figure 8.
Output capacitance stored energy
GIPG090220181022CVR
GIPG090220181024EOS
C
(pF)
E
OSS
(µJ)
8
10
3
10
2
C
iss
6
4
C
oss
10
1
10
0
f = 1 MHz
2
0
C
rss
V
DS
(V)
10
-1
10
0
10
1
10
2
0
100 200 300 400 500 600
V
DS
(V)
Figure 10.
Normalized gate threshold voltage vs
temperature
Figure 9.
Turn-off switching energy vs drain current
E
off
(µJ)
GADG260320181227TSL
GIPG090220181018VTH
V
GS(th)
(norm.)
V
DD
= 400 V
R
G
= 4.7Ω
V
GS
= 10V
14
12
10
8
I
D
= 250 µA
1.1
1.0
0.9
0.8
6
4
2
0.7
0.6
0
1
2
3
4
5
6
I
D
(A)
-75
-25
25
75
125
T
j
(°C)
Figure 12.
Normalized V
(BR)DSS
vs temperature
Figure 11.
Normalized on-resistance vs temperature
GIPG090220181019RON
GIPG090220181020BDV
R
DS(on)
V
(BR)DSS
(norm.)
(norm.)
V
GS
= 10 V
2.5
I
D
= 1 mA
1.10
2.0
1.5
1.0
1.05
1.00
0.95
0.5
0.0
0.90
0.85
-75
-25
25
75
125
T
j
(°C)
-75
-25
25
75
125
T
j
(°C)
DS10739
–
Rev 4
page 6/14
STP25N60M2-EP
Electrical characteristics (curves)
Figure 13.
Source-drain diode forward characteristics
GIPG090220181021SDF
V
SD
(V)
1.1
T
j
= -50 °C
1.0
0.9
T
j
= 25 °C
0.8
0.7
T
j
= 150 °C
0.6
0.5
0
3
6
9
12
15
18
I
SD
(A)
DS10739
–
Rev 4
page 7/14
STP25N60M2-EP
Test circuits
3
Test circuits
Figure 14.
Test circuit for resistive load switching times
Figure 15.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 16.
Test circuit for inductive load switching and
diode recovery times
Figure 17.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
I
D
25 Ω
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 19.
Switching time waveform
Figure 18.
Unclamped inductive waveform
V
(BR)DSS
t
on
t
d(on)
t
off
t
d(off)
V
D
t
r
t
f
90%
90%
10%
I
DM
V
DS
10%
V
GS
0
0
I
D
90%
V
DD
V
DD
10%
AM01472v1
AM01473v1
DS10739
–
Rev 4
page 8/14
STP25N60M2-EP
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
DS10739
–
Rev 4
page 9/14
STP25N60M2-EP
TO-220 type A package information
4.1
TO-220 type A package information
Figure 20.
TO-220 type A package outline
0015988_typeA_Rev_21
DS10739
–
Rev 4
page 10/14
STP25N60M2-EP
TO-220 type A package information
Table 9.
TO-220 type A package mechanical data
mm
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
Typ.
Max.
4.60
0.88
1.55
0.70
15.75
A
b
b1
c
D
D1
E
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
16.40
28.90
3.75
2.65
3.85
2.95
DS10739
–
Rev 4
page 11/14
STP25N60M2-EP
Revision history
Table 10.
Document revision history
Date
Revision
Changes
01-Dec-2014
12-Jan-2015
1
2
First release.
Updated product status from “preliminary data” to “production data”.
Removed maturity status indication from cover page.
Modified schematic on cover page.
Modified
T
a
ble 1. Absolute maximum ratings,
T
a
ble 4. On/off states,
T
a
ble 5.
Dynamic,
T
a
ble 6. Switching energy, Table 7. Switching times
and
T
a
ble 8.
Source drain diode.
13-Feb-2018
28-May-2018
3
4
Updated
Section 2.1 Electrical characteristics (curves)
.
Minor text changes.
Minor text changes
DS10739
–
Rev 4
page 12/14
STP25N60M2-EP
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
9
TO-220 type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
DS10739
–
Rev 4
page 13/14
STP25N60M2-EP
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T
.
A
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© 2018 STMicroelectronics – All rights reserved
DS10739
–
Rev 4
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