STMicroelectronics-STP30NF10

Part #STMicroelectronics-STP30NF10
Download 
STMicroelectronics-STP30NF10
STB30NF10  
STP30NF10 – STP30NF10FP  
N-channel 100V – 0.038
Ω
– 35A – D

2

P
A
K/TO-220/TO-220FP  
Low gate charge S
T
r
ipFET™ II Power MOSFET  
General features  
Type  
V

DSS  

R

DS(on)  

I

D  

STB30NF10  
STP30NF10  
100V  
100V  
100V  
<0.045
Ω
 
<0.045
Ω  
<0.045
Ω  
35A  
35A  
35A  
3
1
3
2
1
D

2

PAK  
STP30NF10FP  
TO-220  
■
Exceptional dv/dt capability  
■
100% avalanche tested  
3
2
■
Application oriented characterization  
1
TO-220FP  
Description  
This Power MOSFET is the latest development of  
STMicroelectronis unique “Single Feature Size™”  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a  
Internal schematic diagram  
remarkable manufacturing reproducibilit
y
.  
Applications  
■
Switching application  
Order codes  
Sales type  
Marking  
Package  
Packaging  
STB30NF10T4  
STP30NF10  
B30NF10  
P30NF10  
D

2

P
A
K  
TO-220  
T
a
pe & reel  
T
u
be  
STP30NF10FP  
P30NF10FP  
TO-220FP  
T
u
be  
June 2006  
Rev 2  
1/16  
16  

STB30NF10 – STP30NF10 – STP30NF10FP  
Electrical ratings  
1
Electrical ratings  
Table 1.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
Unit  
D

2

P
A
K  
TO-220  
TO-220FP  
V

DS  

V

DGR  

V

GS  

I

D  

Drain-source voltage (V

GS

= 0)  
Drain-gate voltage (R

GS

= 20 k
Ω
)  
Gate- source voltage  
100  
100  
20  
V
V
V
Drain current (continuous) at T

C

= 25°C  
Drain current (continuous) at T

C

= 100°C  
Drain current (pulsed)  
35  
25  
18  
13  
72  
30  
0.2  
A
I

D  

A
(1)  
I

DM  

140  
115  
0.77  
A
P

tot  

T
o
tal dissipation at T

C

= 25°C  
Derating Factor  
W
W/°C  
V/ns  
mJ  
V
dv/dt

(2)  

Peak diode recovery voltage slope  
Single pulse avalanche energy  
Insulation withstand voltage (DC)  
Storage temperature  
28  
(3)  
E

AS  

275  
V

ISO  

T

stg  

T

j  

—  
2500  
-55 to 175  
°C  
Max. operating junction temperature  
1. Pulse
 
width limited by safe operating area.  
2. I

SD

≤
30A, di/dt
≤
400A/µs, V

DD

≤
V

(BR)DSS

, Tj
≤
T

JMAX  

3. Starting
 
T

j

= 25 °C, I

D

= 15A, V

DD

= 30V  
Table 2.  
Thermal data  
D

2

P
A
K  
TO-220  
TO-220FP  
Rthj-case Thermal
 
resistance junction-case max  
Rthj-amb Thermal
 
resistance junction-ambient max  
1.30  
5
°C/W  
62.5  
300  
°C/W  
°C  
T

J  

Maximum lead temperature for soldering purpose  
3/16  

Electrical characteristics  
STB30NF10 – STP30NF10 – STP30NF10FP  
2
Electrical characteristics  
(T  
=25°C unless otherwise specified)  
CASE  
Table 3.  
Symbol  
On/off states  
Parameter  
Test conditions  
Min.  
Typ.  
Max.  
Unit  
Drain-source  
V

(BR)DSS  

I

D

= 250µA, V

GS

=0  
100  
V
breakdown voltage  
V

DS

= max ratings  
Zero gate voltage  
1
µA  
µA  
I

DSS  

V

DS

= max ratings,  
T

C

= 125°C  
drain current (V

GS

= 0)  
10  
Gate-body leakage  
current (V

DS

= 0)  
I

GSS  

V

GS  

V

DS

= V

GS

, I

D

= 250µA  

GS

= 10
V
,
I

D

= 15A  
=
20V  
100  
4
nA  
V
V

GS(th)  

R

DS(on)  

Gate threshold voltage  
2
3
Static drain-source on  
resistance  
V
0.038  
0.045  
Ω
Table 4.  
Symbol  
Dynamic  
Parameter  
Test conditions  
Min.  
Typ.  
Max.  
Unit  
Forward  
transconductance  
(1)  
g

fs  

V

DS

= 15
V
,
I

D

= 15A  
10  
S
Input capacitance  
Output capacitance  
C

iss  

C

oss  

C

rss  

1180  
180  
80  
pF  
pF  
pF  
V

DS

= 25
V
, f =
1
MHz,  
V

GS

= 0  
Reverse transfer  
capacitance  
t

d(on)  

t

r  

t

d(off)  

t

f  

T
u
rn-on delay time  
Rise time  
15  
40  
45  
10  
ns  
ns  
ns  
ns  
V

DD

= 50
V
,
I

D

= 15A  
R

G

= 4.7
Ω
V

GS

= 10V  
(see
Figure 15
)  
T
u
rn-off delay time  
Fall time  
Q

g  

Q

gs  

Q

gd  

T
o
tal gate charge  
Gate-source charge  
Gate-drain charge  
V

DD

= 80
V
,
I

D

= 12A,  
V

GS

= 10V  
40  
8
55  
nC  
nC  
nC  
(see
Figure 16
)  
15  
1. Pulsed:
 
Pulse duration = 300 µs, duty cycle 1.5 %.  
4/16  

STB30NF10 – STP30NF10 – STP30NF10FP  
Electrical characteristics  
Table 5.  
Symbol  
Source drain diode  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
Source-drain current  
I

SD  

35  
A
A
Source-drain current  
(pulsed)  
(1)  
I

SDM  

140  
(2)  
V

SD  

Forward on voltage  
I

SD

= 30A, V

GS

= 0  
1.3  
V
I

SD

= 30A,  
t

rr  

Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
110  
390  
7.5  
ns  
nC  
A
di/dt = 100A/µs,  
V

DD

= 55
V
,
T

j

= 150°C  
(see
Figure 17
)  
Q

rr  

I

RRM  

1. Pulse
 
width limited by safe operating area.  
2. Pulsed:
 
Pulse duration = 300 µs, duty cycle 1.5 %  
5/16  

Electrical characteristics  
STB30NF10 – STP30NF10 – STP30NF10FP  
Figure 2.
 
Thermal impedance for TO-  
2.1  
Electrical characteristics (curves)  
Figure 1.
 
Safe operating area for TO-  
2
2
220/D
P
A
K  
220/D
P
A
K  
Figure 3.
 
Safe operating area for TO-220FP  
Figure 4.
 
Thermal impedance for TO-220FP  
Figure 5.
 
Output characterisics  
Figure 6.
 
Transfer characteristics  
6/16  

STB30NF10 – STP30NF10 – STP30NF10FP  
Figure 7.
 
Transconductance  
Electrical characteristics  
Figure 8.
 
Static drain-source on resistance  
Figure 9.
 
Gate charge vs gate-source voltage
 
Figure 10.
 
Capacitance variations  
Figure 11.
 
Normalized gate threshold voltage
 
Figure 12.
 
Normalized on resistance vs  
vs temperature
 
temperature  
7/16  

Electrical characteristics  
STB30NF10 – STP30NF10 – STP30NF10FP  
Figure 13.
 
Source-drain diode forward  
characteristics  
Figure 14.
 
Normalized B  
vs temperature  
VDSS  
8/16  

STB30NF10 – STP30NF10 – STP30NF10FP  
Test circuit  
3
Test circuit  
Figure 15.
 
Switching times test circuit for  
resistive load  
Figure 16.
 
Gate charge test circuit  
Figure 17.
 
Test circuit for inductive load  
switching and diode recovery times  
Figure 18.
 
Unclamped Inductive load test  
circuit  
Figure 19.
 
Unclamped inductive waveform  
Figure 20.
 
Switching time waveform  
9/16  

Package mechanical data  
STB30NF10 – STP30NF10 – STP30NF10FP  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®  
packages. These packages have a Lead-free second level interconnect . The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.  
ECO
P
ACK specifications are available at:

10/16  

STB30NF10 – STP30NF10 – STP30NF10FP  
Package mechanical data  
D

2

PAK MECHANICAL DATA  
mm.  
inch  
DIM.  
MIN.  
TYP  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.001  
0.027  
0.044  
0.017  
0.048  
0.352  
TYP.  
MAX.  
0.181  
0.106  
0.009  
0.036  
0.067  
0.023  
0.053  
0.368  
A
A1  
A2  
B
4.4  
2.49  
0.03  
0.7  
2.69  
0.23  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.23  
8.95  
0.6  
C2  
D
1.36  
9.35  
D1  
E
8
0.315  
0.334  
10  
10.4  
0.393  
E1  
G
8.5  
4.88  
15  
5.28  
15.85  
1.4  
0.192  
0.590  
0.050  
0.055  
0.094  
0.208  
0.625  
0.055  
0.068  
0.126  
L
L2  
L3  
M
1.27  
1.4  
1.75  
3.2  
2.4  
R
0.4  
0.015  
V2  
0º  
4º  
1
11/16  

Package mechanical data  
STB30NF10 – STP30NF10 – STP30NF10FP  
TO-220FP MECHANICAL DATA  
mm.  
TYP  
inch  
TYP.  
DIM.  
MIN.  
4.4  
MAX.  
4.6  
2.7  
2.75  
0.7  
1
MIN.  
0.173  
0.098  
0.098  
0.017  
0.030  
0.045  
0.045  
0.195  
0.094  
0.393  
MAX.  
0.181  
0.106  
0.108  
0.027  
0.039  
0.067  
0.067  
0.204  
0.106  
0.409  
A
B
2.5  
D
2.5  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
F1  
F2  
G
1.7  
1.7  
5.2  
2.7  
10.4  
G1  
H
10  
L2  
L3  
L4  
L5  
L6  
L7  
Ø
16  
0.630  
28.6  
9.8  
2.9  
15.9  
9
30.6  
10.6  
3.6  
1.126  
.0385  
0.114  
0.626  
0.354  
0.118  
1.204  
0.417  
0.141  
0.645  
0.366  
0.126  
16.4  
9.3  
3
3.2  
L3  
L6  
L7  
1
2 3  
L5  
L2  
L4  
12/16  

STB30NF10 – STP30NF10 – STP30NF10FP  
Package mechanical data  
TO-220 MECHANICAL DATA  
mm.  
TYP  
inch  
DIM.  
MIN.  
4.40  
0.61  
1.15  
0.49  
15.25  
10  
MAX.  
4.60  
0.88  
1.70  
0.70  
15.75  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
MIN.  
0.173  
0.024  
0.045  
0.019  
0.60  
TYP.  
MAX.  
0.181  
0.034  
0.066  
0.027  
0.620  
0.409  
0.106  
0.202  
0.052  
0.256  
0.107  
0.551  
0.154  
A
b
b1  
c
D
E
0.393  
0.094  
0.194  
0.048  
0.244  
0.094  
0.511  
0.137  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
øP  
Q
3.50  
3.93  
16.40  
28.90  
0.645  
1.137  
3.75  
2.65  
3.85  
2.95  
0.147  
0.104  
0.151  
0.116  
13/16  

Packaging mechanical data  
STB30NF10 – STP30NF10 – STP30NF10FP  
5
Packaging mechanical data  
2
D PAK FOOTPRINT  
TAPE AND REEL SHIPMENT  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8  
20.2  
24.4  
100  
0.059  
13.2 0.504
 
0.520  
0795  
26.4 0.960
 
1.039  
3.937  
30.4  
1.197  
BASE QTY  
BULK QTY  
1000  
TAPE MECHANICAL DATA  
1000  
mm  
inch  
DIM.  
MIN. MAX. MIN. MAX.  
10.5 10.7
 
0.413 0.421  
15.7 15.9
 
0.618 0.626  
A0  
B0  
D
1.5  
1.6 0.059
 
0.063  
D1  
E
1.59 1.61
 
0.062 0.063  
1.65 1.85
 
0.065 0.073  
F
11.4  
4.8  
3.9  
11.9  
1.9  
50  
11.6 0.449
 
0.456  
5.0 0.189
 
0.197  
4.1 0.153
 
0.161  
12.1 0.468
 
0.476  
2.1 0.075
 
0.082  
1.574  
K0  
P0  
P1  
P2  
R
T
0.25 0.35
 
0.0098 0.0137  
23.7 24.3
 
0.933 0.956  
W
* on sales type  
14/16  

STB30NF10 – STP30NF10 – STP30NF10FP  
Revision history  
6
Revision history  
Table 6.  
Date  
Revision history  
Revision  
Changes  
21-Jun-2004  
26-Jun-2006  
1
2
First version  
New template, no content change  
15/16  

STB30NF10 – STP30NF10 – STP30NF10FP  
Please Read Carefully:  
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the  
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any  
time, without notice.  
All ST products are sold pursuant to ST’s terms and conditions of sale.  
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no  
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this  
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products  
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such  
third party products or services or any intellectual property contained therein.  
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED  
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED  
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS  
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.  
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED,  
AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS,  
NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR  
SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE.  
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void  
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any  
liability of ST.  
ST and the ST logo are trademarks or registered trademarks of ST in various countries.  
Information in this document supersedes and replaces all information previously supplied.  
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.  
© 2006 STMicroelectronics – All rights reserved  
STMicroelectronics group of companies  
Australia – Belgium – Brazil – Canada – China – Czech Republic – Finland – France – Germany – Hong Kong – India – Israel – Italy – Japan –  
Malaysia – Malta – Morocco – Singapore – Spain – Sweden – Switzerland – United Kingdom – United States of America  
16/16