STMicroelectronics-STP32N65M5
| Part # | STMicroelectronics-STP32N65M5 |
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STB32N65M5
Datasheet
N-channel 650 V, 95 mΩ typ., 24 A MDmesh™ M5 Power MOSFET
in D²PAK package
Features
TAB
V
at T
R
DS(on)
max.
I
D
Order codes
DS
jmax.
STB32N65M5
710 V
119 mΩ
24 A
2
1
3
•
•
•
•
Extremely low R
DS(on)
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
D²
PAK
D(2, TAB)
Applications
•
Switching applications
Description
G(1)
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative
vertical process technology combined with the well-known PowerMESH™ horizontal
layout. The resulting product offers extremely low on-resistance, making it particularly
suitable for applications requiring high power and superior efficiency.
S(3)
AM01475v1_noZen
Product status link
Product summary
Order code
Marking
STB32N65M5
32N65M5
2
Package
Packing
D PAK
T
a
pe and reel
DS6032
–
Rev 5
–
November 2018
For further information contact your local STMicroelectronics sales office.
STB32N65M5
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
V
Gate-source voltage
±25
24
GS
I
Drain current (continuous) at T
= 25 °C
A
D
D
C
I
Drain current (continuous) at T
= 100 °C
15
A
C
I
Drain current (pulsed)
96
A
DM
P
T
o
tal power dissipation at T
= 25 °C
150
15
W
TOT
C
Peak diode recovery voltage slope
Operating junction temperature range
Storage temperature range
V/ns
T
j
-55 to 150
°C
T
stg
1. Pulse
width limited by safe operating area.
2. ≤
24 A, di/dt ≤ 400 A/μs, V
≤ V
.
(BR)DSS
I
SD
DS(peak)
Table 2.
Thermal data
Parameter
Symbol
Value
0.83
30
Unit
°C/W
°C/W
R
thj-case
Thermal resistance junction-case
Thermal resistance junction-pcb
R
thj-pcb
1. When
mounted on FR-4 board of 1 inch², 2oz Cu.
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
8
Unit
A
I
Avalanche current, repetitive or not-repetitive (pulse width limited by T
Max)
AR
j
E
Single pulse avalanche energy (starting T
= 25 °C, I
= I
, V
= 50 V)
650
mJ
AS
j
D
AR
DD
DS6032
–
Rev 5
page 2/17
STB32N65M5
Electrical characteristics
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
V
I =
1 mA, V
= 0 V
D GS
Drain-source breakdown voltage
650
(BR)DSS
V
V
T
= 650
V
, V
= 0 V,
1
µA
DS
DS
GS
I
= 650
V
, V
= 0 V,
Zero gate voltage drain current
DSS
GS
100
µA
C
I
V
V
V
= 0
V
, V
=
±
25 V
Gate body leakage current
Gate threshold voltage
±100
5
nA
V
GSS
DS
GS
V
= V
, I
= 250 µA
3
4
GS(th)
DS(on)
DS
GS
GS
D
R
= 10 V, I
= 12 A
D
Static drain-source on resistance
95
119
mΩ
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ.
3320
75
Max.
Unit
C
iss
V
V
= 100 V, f = 1 MHz,
= 0 V
DS
C
oss
Output capacitance
–
–
pF
GS
C
Reverse transfer capacitance
Equivalent capacitance time related
5
rss
C
–
–
–
210
–
–
–
pF
pF
Ω
o(tr)
V
= 0
V
, V
= 0
t
o 520 V
DS
GS
Equivalent capacitance energy
related
C
70
o(er)
f = 1 MHz, I
= 0 A
Rg
Gate input resistance
T
o
tal gate charge
2
D
Q
V
V
= 520 V, I
= 12 A,
72
17
29
g
DD
D
= 0 to 10 V
Q
GS
Gate-source charge
Gate-drain charge
–
–
nC
gs
Q
gd
1.
2.
C
time related is defined as a constant equivalent capacitance giving the same charging time as C
when V
DS
o(tr)
oss
increases from 0 to 80% V
.
DSS
C
energy related is defined as a constant equivalent capacitance giving the same stored energy as C
when V
oss DS
o(er)
increases from 0 to 80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Turn-off delay time
Min.
Typ.
53
Max.
Unit
t
V
= 400
V
, I
=
1
5 A,
d(off)
DD
D
R
= 4.7 Ω, V
= 10 V
t
G
GS
Rise time
12
r
t
Cross time
29
–
–
ns
c
t
Fall time
16
f
DS6032
–
Rev 5
page 3/17
STB32N65M5
Electrical characteristics
Table 7.
Source drain diode
Test conditions
Symbol
Parameter
Source-drain current
Min.
Typ.
Max.
24
Unit
I
SD
–
–
A
I
Source-drain current (pulsed)
Forward on voltage
96
SDM
V
I
I
= 24 A, V
= 0 V
1.5
V
SD
GS
SD
t
rr
= 24 A, di/dt = 100 A/µs
= 60 V (see
Reverse recovery time
Reverse recovery charge
375
6
ns
µC
SD
V
Q
DD
rr
–
–
I
Reverse recovery current
33
A
RRM
t
I
= 24 A, di/dt = 100 A/µs
= 60
V
,
T
j = 150 °C
Reverse recovery time
440
8
ns
rr
SD
V
Q
rr
DD
Reverse recovery charge
µC
I
Reverse recovery current
36
A
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration = 300 μs, duty cycle 1.5%.
DS6032
–
Rev 5
page 4/17
STB32N65M5
Electrical characteristics curves
2.1
Electrical characteristics curves
Figure 2.
Thermal impedance
Figure 1.
Safe operating area
GC20540_ZTH
AM
0
5448v1
I
D
K
10
-1
10
-2
δ=0.5
δ=0.2
(A)
0.1
10
10µs
100µs
0.05
0.02
0.01
1ms
10ms
1
Tj=150°C
Single pulse
Tc=25°C
S
i
n
l
g
e
pu
l
s
e
0.1
-5
10
-2
10
10
-4
10
10
-1
-3
t
p
(s)
10
V
D
S
(V)
0.1
1
100
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
AM
0
5451v1
AM
0
5452v1
I
D
I
D
(A)
V
GS
=10V
V
D
S
=20V
50
40
30
20
30
20
10
0
10
0
2
8
10
0
4
6
V
GS
(V)
0
10
30
V
DS
Figure 5.
Gate charge vs gate-source voltage
Figure 6.
Static drain-source on resistance
AM
0
5457v1
AM
0
5454v1
V
GS
V
D
S
R
D
S
(
on)
(Ω)
V
DD
=520V
12
10
8
480
3
DS
I
D
=12A
0.111
0.091
0.071
6
0.051
4
2
0
0.031
0.011
80
10
15
40
80
5
0
20
60
Q
g
0
I
D
(A)
DS6032
–
Rev 5
page 5/17
STB32N65M5
Electrical characteristics curves
Figure 7.
Capacitance variations
Figure 8.
Output capacitance stored energy
AM
0
5456v1
AM
0
5455v1
C
E
oss
(pF)
(µ
J
)
14
10000
1000
12
10
8
C
i
s
s
100
10
1
6
Coss
Crss
4
2
0
0.1
100
1
10
V
D
S
(V)
200
300
400 500
600
V
D
S
(V)
0
100
Figure 9.
Normalized gate threshold voltage vs
temperature
Figure 10.
Normalized on resistance vs temperature
AM
0
5460v1
R
D
S
(
on)
AM
0
5459v1
V
GS(th)
(norm)
2.1
(norm)
1.10
I
D
= 250 μA
1.9
1.7
1.5
1.3
1.1
V
GS
= 10 V
1.00
0.90
0.9
0.80
0.70
0.7
0.5
-50
-25
0
25 50 75
T
J
(°C)
100
-50
-25
0
25 50 75
T
J
(°C)
100
Figure 12.
Normalized V
(BR)DSS
vs temperature
Figure 11.
Source-drain diode forward characteristics
AM
0
5453v1
AM
0
5461v1
V
S
D
V
(BR)DSS
(V)
T
J
=-50°C
1.2
1.0
0.8
0.6
I
D
= 1 mA
1.03
T
J
=25°C
1.01
0.99
0.97
T
J
=150°C
0.4
0.2
0.95
3
0
0
10
20
30
40
50
I
S
D
(A)
-50
T
J
0
DS6032
–
Rev 5
page 6/17
STB32N65M5
Electrical characteristics curves
Figure 13.
Switching energy vs gate resistance
AM
0
5458v1
E
μJ)
I
D
=15A
V
C
L
=400V
V
GS
=10V
Eon
400
300
Eo
f
f
200
100
0
20
30
40
10
R
G
(Ω
0
* Eon including reverse recovery of a SiC diode.
DS6032
–
Rev 5
page 7/17
STB32N65M5
Test circuits
3
Test circuits
Figure 14.
Test circuit for resistive load switching times
Figure 15.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 16.
Test circuit for inductive load switching and
diode recovery times
Figure 17.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
1000
µF
B
V
DD
+
3.3
µF
µF
B
+
V
DD
25 Ω
I
D
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 18.
Unclamped inductive waveform
Figure 19.
Switching time waveform
Concept waveform for Inductive Load Turn-off
V
(BR)DSS
Id
V
D
90%
V
d
s
90%Id
Tdelay -off
I
DM
V
g
s
90%
V
g
s
10%
V
d
s
on
I
D
V
g
s(
I
(
t ))
V
DD
V
DD
10%Id
V
d
s
Trise
T
f
a
ll
Tcro
s
s -over
AM05540v2
AM01472v1
DS6032
–
Rev 5
page 8/17
STB32N65M5
Package information
4
Package information
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
DS6032
–
Rev 5
page 9/17
STB32N65M5
D²PAK (TO-263) type A package information
4.1
D²PAK (TO-263) type A package information
Figure 20.
D²PAK (TO-263) type A package outline
0079457_25
DS6032
–
Rev 5
page 10/17
STB32N65M5
D²PAK (TO-263) type A package information
Table 8.
D²PAK (TO-263) type A package mechanical data
mm
Dim.
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
1.10
10.00
8.30
6.85
Typ.
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
8.00
1.50
10.40
8.70
7.25
A
A1
b
b2
c
c2
D
D1
D2
E
7.75
1.30
E1
E2
e
8.50
7.05
2.54
e1
H
4.88
15.00
2.49
2.29
1.27
1.30
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
L1
L2
R
0.40
V2
0°
8°
DS6032
–
Rev 5
page 11/17
STB32N65M5
D²PAK (TO-263) type A package information
Figure 21.
D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint
DS6032
–
Rev 5
page 12/17
STB32N65M5
D²PAK packing information
4.2
D²PAK packing information
Figure 22.
D²PAK tape outline
DS6032
–
Rev 5
page 13/17
STB32N65M5
D²PAK packing information
Figure 23.
D²PAK reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
Full radius
2.5mm min.width
AM06038v1
Table 9.
D²PAK tape and reel mechanical data
Tape
Reel
mm
mm
Max.
330
Dim.
Dim.
Min.
10.5
15.7
1.5
Max.
Min.
A0
B0
D
10.7
15.9
1.6
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base quantity
Bulk quantity
1000
1000
50
T
0.25
23.7
0.35
24.3
W
DS6032
–
Rev 5
page 14/17
STB32N65M5
Revision history
Table 10.
Document revision history
Date
Version
Changes
16-Jan-2009
01-Sep-2009
30-Sep-2009
1
2
3
First release
Document status promoted from preliminary data to datasheet.
Corrected V
value on
T
a
ble 2: Absolute maximum ratings
GS
C
o(er)
and C
values changed in
Table 5: Dynamic
o(tr)
T
a
ble 6: Switching times
parameters updates
Figure 24: Switching time waveform
has been corrected
Minor text changes
Section 4: Package mechanical data
has been modified. Added:
–
T
a
ble 8: D²PAK (TO-263) mechanical data
,
Figure 25: D²PAK (TO-263)
drawing
and
Figure 26: D²PAK footprint
;
–
T
a
ble 9: TO-220FP mechanical data
, and
Figure 27: TO-220FP drawing
;
06-Oct-2011
4
–
T
a
ble 10: I²PAK (TO-262) mechanical data
, and
Figure 28: I²PAK (TO-262)
drawing
;
–
T
a
ble 11: TO-220 type A mechanical data
, and
Figure 29: TO-220 type A
drawing
;
–
T
a
ble 12: TO-247 mechanical data
, and
Figure 30: TO-247 drawing
;
Section 5: Packaging mechanical data
has been modified. Added:
–
T
a
ble 13: D²PAK (TO-263) tape and reel mechanical data
,
Figure 31:
T
a
pe
and
Figure 32: Reel;
The part numbers STF32N65M5, STI32N65M5, STP32N65M5,
STW32N65M5 have been moved to a separate datasheet.
02-Nov-2018
5
Content reworked to improve readability, no technical changes.
DS6032
–
Rev 5
page 15/17
STB32N65M5
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics curves
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
9
D²PAK (TO-263) type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
D²PAK packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
12
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
DS6032
–
Rev 5
page 16/17
STB32N65M5
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T
.
A
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© 2018 STMicroelectronics – All rights reserved
DS6032
–
Rev 5
page 17/17
