STMicroelectronics-STP36N60M6
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STP36N60M6, STW36N60M6
N-
channel 600 V, 85 m
Ω
typ., 30 A MDmesh™
M6
Power MOSFETs in TO-220 and TO-247 packages
Datasheet – production data
Features
TAB
Order code
STP36N60M6
STW36N60M6
V
DS
R
DS(on)
max.
I
D
600 V
99 m
ꢀ
30 A
3
3
x
x
x
x
x
Reduced switching losses
2
2
1
Lower R
DS(on)
x area vs previous generation
Low gate input resistance
100% avalanche tested
1
TO-247
TO-220
Zener-protected
Applications
Figure 1: Internal schematic diagram
x
Switching applications
Description
The new MDmesh™ M6 technology incorporates
the most recent advancements to the well-known
and consolidated MDmesh family of SJ
MOSFETs. STMicroelectronics builds on the
previous generation of MDmesh devices through
its new M6 technology, which combines excellent
R
DS(on)
* area improvement with one of the most
effective switching behaviors available, as well as
a user-friendly experience for maximum end-
application efficiency.
Table 1: Device summary
Order code
STP36N60M6
STW36N60M6
Marking
Package
Packaging
TO-220
TO-247
36N60M6
Tube
March 2017
DocID028429 Rev 3
1/16
This is information on a product in full production.
Contents
STP36N60M6, STW36N60M6
Contents
1
2
Electrical ratings ………………………………………………………………….
.
3
Electrical characteristics ………………………………………………………
.
4
2.1
Electrical characteristics (curves)……………………………………………..
.
6
3
4
Test circuits …………………………………………………………………………
.
9
Package information …………………………………………………………..
.
1
0
4.1
4.2
TO-220 type A package information………………………………………..
.
1
1
TO-247 package information………………………………………………….
.
1
3
5
Revision history …………………………………………………………………
.
1
5
2/16
DocID028429 Rev 3
STP36N60M6, STW36N60M6
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
±25
30
Unit
V
V
GS
I
D
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
A
I
D
19
A
(1)
I
D
102
208
15
A
P
TOT
dv/dt
(2)
dv/dt
(3)
T
stg
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
W
V/ns
V/ns
50
Storage temperature range
-55 to 150
°C
T
j
Operating junction temperature range
Notes:
(1)
Pulse width limited by safe operating area.
(2)
I
≤
30 A, di/dt
≤
400 A/
μ
s, V
DS(peak)
< V
(BR)DSS
, V
DD
= 400 V.
≤
480 V
SD
(3)
V
DS
Table 3: Thermal data
Parameter
Value
TO-220 TO-247
0.6
Symbol
Unit
R
thj-case
R
thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
°C/W
°C/W
50
62.5
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not repetitive
I
AR
5
A
(pulse width limited by T
jmax
)
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
E
AS
750
mJ
DocID028429 Rev 3
3/16
Electrical characteristics
STP36N60M6, STW36N60M6
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 5: On/off states
Symbol
Parameter
Test conditions
V
GS
= 0 V, I
D
= 1 mA
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
600
V
V
GS
= 0 V, V
DS
= 600 V
1
μ
A
μ
A
Zero gate voltage drain
current
I
DSS
V
GS
= 0 V, V
DS
= 600 V,
T
C
= 125 °C
(1)
100
Gate-body leakage current
Gate threshold voltage
I
GSS
V
DS
= 0 V, V
GS
= ±25 V
±5
μ
A
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
3.25
4
4.75
V
Static drain-source
on-resistance
R
DS(on)
V
GS
= 10 V, I
D
= 15 A
85
99
m
ꢀ
Notes:
(1)
Defined by design, not subject to production test.
Table 6: Dynamic
Test conditions
Symbol
C
iss
Parameter
Input capacitance
Output capacitance
Min. Typ. Max. Unit
–
–
1960
93
–
–
pF
pF
C
oss
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
Reverse transfer
capacitance
C
rss
–
–
6
–
–
pF
pF
Equivalent output
capacitance
(1)
C
oss eq.
V
DS
= 0 to 480 V, V
GS
= 0 V
f = 1 MHz, I
D
= 0 A
332
R
G
Q
g
Intrinsic gate resistance
Total gate charge
–
–
–
–
1.6
44.3
10.1
25
–
–
–
–
ꢀ
nC
nC
nC
V
DD
= 480 V, I
D
= 30 A,
V
GS
= 0 to 10 V
(see
Figure 17: “Test circuit for
gate charge behavior”
)
Q
gs
Q
gd
Gate-source charge
Gate-drain charge
Notes:
(1)
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
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DocID028429 Rev 3
STP36N60M6, STW36N60M6
Electrical characteristics
Min. Typ. Max. Unit
Table 7: Switching times
Test conditions
Symbol
t
d(on)
t
r
Parameter
Turn-on delay time
Rise time
V
DD
= 300 V, I
D
= 15 A,
R
G
= 4.7
Ω
, V
GS
= 10 V
(see
Figure 18: “Test circuit for
inductive load switching and
diode recovery times”
and
Figure 21: “Switching time
waveform”
)
–
–
–
15.2
5.3
–
–
–
ns
ns
ns
t
d(off)
Turn-off-delay time
50.2
t
f
Fall time
–
7.3
–
ns
Table 8: Source drain diode
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
I
SD
Source-drain current
–
–
30
102
1.6
A
A
Source-drain current
(pulsed)
(1)
I
SDM
,
(2)
V
SD
t
rr
Forward on voltage
V
GS
= 0 V, I
SD
= 30 A
–
–
–
V
Reverse recovery time
Reverse recovery charge
340
5.3
ns
μ
C
I
SD
= 30 A, di/dt = 100 A/
μ
s,
V
DD
= 60 V
(see
Figure 18: “Test circuit for
inductive load switching and
diode recovery times”
)
Q
rr
I
RRM
Reverse recovery current
–
31
A
t
rr
Reverse recovery time
–
–
430
7.7
ns
I
SD
= 30 A, di/dt = 100 A/
μ
s,
V
DD
= 60 V, T
j
= 150 °C
Q
rr
Reverse recovery charge
μ
C
(see
Figure 18: “Test circuit for
inductive load switching and
diode recovery times”
)
I
RRM
Reverse recovery current
–
36
A
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
Pulsed: pulse duration = 300
μ
s, duty cycle 1.5%
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Electrical characteristics
STP36N60M6, STW36N60M6
2.1
Electrical characteristics (curves)
Figure 2: Safe operating area for TO-220
Figure 4: Safe operating area for TO-247
Figure 6: Output characteristics
Figure 3: Thermal impedance for TO-220
GC20540_ZTH
K
δ
=0.5
δ
=0.2
0.1
10
-1
0.05
0.02
0.01
Single pulse
10
-2
10
-5
10
-2
10
-4
10
10
-1
-3
t
p
(s)
Figure 5: Thermal impedance for TO-247
GC18460_ZTH
K
10
-1
10
-2
10
-3
δ
=0.5
δ
=0.2
0.1
0.05
0.02
0.01
Single pulse
-5
10
-2
10
-4
10
10
-1
-3
t
p
(s)
10
Figure 7: Transfer characteristics
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DocID028429 Rev 3
STP36N60M6, STW36N60M6
Electrical characteristics
Figure 8: Gate charge vs gate-source voltage
Figure 9: Static drain-source on-resistance
Figure 10: Capacitance variations
Figure 11: Normalized gate threshold voltage vs
temperature
Figure 12: Normalized on-resistance vs temperature
Figure 13: Normalized V
(BR)DSS
vs temperature
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Electrical characteristics
STP36N60M6, STW36N60M6
Figure 15: Source-drain diode forward
characteristics
Figure 14: Output capacitance stored energy
8/16
DocID028429 Rev 3
STP36N60M6, STW36N60M6
Test circuits
3
Test circuits
Figure 16: Test circuit for resistive load
switching times
Figure 17: Test circuit for gate charge
behavior
Figure 18: Test circuit for inductive load
switching and diode recovery times
Figure 19: Unclamped inductive load test
circuit
Figure 20: Unclamped inductive waveform
Figure 21: Switching time waveform
DocID028429 Rev 3
9/16
Package information
STP36N60M6, STW36N60M6
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
10/16
DocID028429 Rev 3
STP36N60M6, STW36N60M6
Package information
4.1
TO-220 type A package information
Figure 22: TO-220 type A package outline
DocID028429 Rev 3
11/16
Package information
STP36N60M6, STW36N60M6
Table 9: TO-220 type A mechanical data
mm
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
Typ.
Max.
4.60
0.88
1.55
0.70
15.75
A
b
b1
c
D
D1
E
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
16.40
28.90
3.75
2.65
3.85
2.95
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DocID028429 Rev 3
STP36N60M6, STW36N60M6
Package information
4.2
TO-247 package information
Figure 23: TO-247 package outline
0075325_8
DocID028429 Rev 3
13/16
Package information
STP36N60M6, STW36N60M6
Table 10: TO-247 package mechanical data
mm
Dim.
Min.
4.85
2.20
1.0
Typ.
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
A
A1
b
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
ØP
ØR
S
3.55
4.50
5.30
3.65
5.50
5.70
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DocID028429 Rev 3
STP36N60M6, STW36N60M6
Revision history
5
Revision history
Table 11: Document revision history
Changes
Date
Revision
06-Oct-2015
1
First release
Updated: V
DD
value in
Table 8: “Source drain diode”
14-Oct-2015
27-Mar-2017
2
3
Minor text changes
Updated
Table 2: “Absolute maximum ratings”
.
Updated
Section 2: “Electrical characteristics”
.
Updated
Section 4: “Package information”
.
Minor text changes
DocID028429 Rev 3
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STP36N60M6, STW36N60M6
IMPORTANT NOTICE
–
PLEASE READ CAREFULLY
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s
, and
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r
der
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
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–
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