STMicroelectronics-STP3N150
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STFW3N150, STH3N150-2
STP3N150, STW3N150
Datasheet
N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFE
T
s
in TO-3P
F
,
H
2
PAK-2, TO-220 and TO247 packages
Features
TAB
V
R
max.
I
P
TOT
Order codes
STFW3N150
STH3N150-2
STP3N150
DS
DS(on)
D
2
1
3
3
63 W
H
2
PAK-2
2
1
TO-3PF
1500 V
9 Ω
2.5 A
140 W
TAB
STW3N150
3
3
•
•
•
•
100% avalanche tested
2
2
TO-220
1
1
Intrinsic capacitances and Qg minimized
High speed switching
TO-247
Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)
D(2, TAB)
D(TAB)
Applications
•
Switching applications
G(1)
G(1)
Description
S(3)
(TO-3P
F
,
T
O-220 and TO-247)
S(2, 3)
(H
2
PAK-2)
These Power MOSFE
T
s
a
re designed using the STMicroelectronics consolidated
strip-layout-based MESH OVERLAY process. The result is a product that matches or
improves on the performance of comparable standard parts from other
manufacturers.
AM15557v1
Product status link
DS5052
–
Rev 12
–
May 2020
For further information contact your local STMicroelectronics sales office.
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical ratings
1
Electrical ratings
Table 1.
Value
Symbol
Parameter
Unit
2
TO-3PF
TO-220 TO-247
H PAK-2
V
V
Drain-source voltage
Gate-source voltage
1500
V
V
DS
±30
10
GS
Drain current (continuous) at T
= 25 °C
2.5
1.6
C
I
A
D
Drain current (continuous) at T
= 100 °C
C
I
Drain current (pulsed)
A
DM
P
T
o
tal power dissipation at T
= 25 °C
63
3.5
0.5
140
W
TOT
C
Insulation withstand voltage (RMS) from all three leads to
V
kV
ISO
external heat sink (t = 1 s; T
= 25 °C)
C
Derating factor
1.12
W/°C
T
Storage temperature range
Operating junction temperature range
stg
-55 to 150
°C
T
J
1. Limited
by maximum junction temperature.
2. Pulse
width limited by safe operating area.
Table 2.
Thermal data
Value
Symbol
Parameter
Unit
2
TO-3PF
TO-220 TO-247
H PAK-2
R
Thermal resistance junction-case
2
0.89
°C/W
°C/W
°C/W
thj-case
R
Thermal resistance junction-ambient
50
62.5
50
thj-amb
R
thj-pcb
Thermal resistance junction-pcb
35
2
1.
When mounted on 1 inch
FR-4 board, 2 oz Cu.
Table 3.
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
Max value
Unit
I
2.5
A
AR
(pulse width limited by T
max)
J
Single pulse avalanche energy
E
450
mJ
AS
(starting T
= 25 °C, I
= I
, V
= 50 V)
J
D
AR
DD
DS5052
–
Rev 12
page 2/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4.
Static
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
V
V
GS
V
GS
V
GS
V
DS
V
DS
V
GS
= 0
V
, I
= 1
m
A
Drain-source breakdown voltage
1500
V
(BR)DSS
D
= 0
V
, V
=
1
500 V
10
µA
DS
I
Zero gate voltage drain current
DSS
500
DS
C
I
= 0
V
, V
=
±
30 V
Gate-body leakage current
Gate threshold voltage
±100
nA
V
GSS
GS
V
= V
, I
= 250 µA
3
4
6
5
9
GS(th)
DS(on)
GS
D
R
= 10
V
, I
=
1
.3 A
D
Static drain-source on-resistance
Ω
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Symbol
Parameter
Input capacitance
Test conditions
Min.
Typ. Max. Unit
C
iss
–
–
–
–
939
102
13.2
100
–
–
–
–
C
oss
V
V
= 25
V
, f = 1
M
Hz, V
= 0 V
Output capacitance
pF
DS
GS
C
rss
Reverse transfer capacitance
Equivalent output capacitance
= 0 to 1200
V
, V
= 0 V
C
oss eq.
pF
Ω
DS
GS
f = 1 MHz, gate DC Bias = 0,
test signal level = 20 m
V
, I
= 0 A
R
g
Gate input resistance
–
4
–
D
Q
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
29.3
4.6
17
–
–
–
g
V
= 1200
V
, I
=
2
.5 A, V
= 0 to 10 V
D GS
DD
Q
nC
gs
Q
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Min.
Typ. Max. Unit
t
Turn-on delay time
Rise time
–
–
–
–
24
47
45
61
–
–
–
–
V
= 750
V
, I
=
1
.25 A,
d(on)
DD
D
R
= 4.7 Ω, V
= 10 V
t
G
GS
r
ns
t
Turn-off delay time
Fall time
d(off)
t
f
DS5052
–
Rev 12
page 3/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics
Table 7.
Source-drain diode
Symbol
Parameter
Source-drain current
Test conditions
Min.
Typ. Max. Unit
I
–
–
–
–
–
2.5
10
A
A
SD
I
Source-drain current (pulsed)
Forward on voltage
SDM
V
V
I
= 0
V
, I
=
2
.5 A
SD
1.6
V
GS
SD
t
rr
= 2.5 A, di/dt = 100 A/µs,
= 60 V
Reverse recovery time
Reverse recovery charge
410
2.4
ns
µC
SD
V
Q
DD
rr
I
Reverse recovery current
–
11.7
A
RRM
t
I
= 2.5 A, di/dt = 100 A/µs,
= 60 V, T
= 150 °C
Reverse recovery time
–
–
540
3.3
ns
rr
SD
V
Q
DD
J
Reverse recovery charge
µC
rr
I
Reverse recovery current
–
12.3
A
RRM
1. Pulse
width is limited by safe operating area.
2. Pulse
test: pulse duration = 300 µs, duty cycle 1.5%.
DS5052
–
Rev 12
page 4/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area for TO-3PF
Figure 2.
Thermal impedance for TO-3PF
AM03941v1
I
D
ZTH_TO3PF
K
(A)
10
1
10µs
10
-1
Z
th
=k*R
thj-c
100µs
1ms
10ms
Tj=150°C
Tc=25°C
0.1
0.01
S
i
n
l
g
e
pu
l
s
e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
V
D
S
(V)
0.1
1
100
1000
t
p
(s)
Figure 4.
Thermal impedance for H
2
PAK-2 and TO-220
Figure 3.
Safe operating area for H
2
PAK-2 and TO-220
GC20540
HV37430
Figure 5.
Safe operating area for TO-247
Figure 6.
Thermal impedance for TO-247
HV37440
GC20530
DS5052
–
Rev 12
page 5/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics (curves)
Figure 7.
Output characteristics
Figure 8.
Transfer characteristics
HV37460
HV37465
Figure 9.
Normalized V
(BR)DSS
vs temperature
Figure 10.
Static drain-source on-resistance
HV37470
HV37480
Figure 11.
Gate charge vs gate-source voltage
Figure 12.
Capacitance variations
HV37490
HV37500
DS5052
–
Rev 12
page 6/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics (curves)
Figure 13.
Normalized gate threshold voltage vs
temperature
Figure 14.
Normalized on resistance vs temperature
HV37520
HV37510
Figure 16.
Maximum avalanche energy vs T
J
Figure 15.
Source-drain diode forward characteristics
HV37530
HV37540
DS5052
–
Rev 12
page 7/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Test circuits
3
Test circuits
Figure 17.
Test circuit for resistive load switching times
Figure 18.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 19.
Test circuit for inductive load switching and
diode recovery times
Figure 20.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
25 Ω
I
D
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 22.
Switching time waveform
Figure 21.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DS5052
–
Rev 12
page 8/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
TO-220 type A package information
Figure 23.
TO-220 type A package outline
0015988_typeA_Rev_23
DS5052
–
Rev 12
page 9/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
TO-220 type A package information
Table 8.
TO-220 type A package mechanical data
mm
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
Typ.
Max.
4.60
0.88
1.55
0.70
15.75
A
b
b1
c
D
D1
1.27
E
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
e
e1
F
H1
J1
L
L1
L20
16.40
28.90
L30
øP
Q
3.75
2.65
3.85
2.95
0.10
Slug flatness
0.03
DS5052
–
Rev 12
page 10/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
H²PAK-2 package information
4.2
H²PAK-2 package information
Figure 24.
H²PAK-2 package outline
8159712_9
DS5052
–
Rev 12
page 11/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
H²PAK-2 package information
Table 9.
H²PAK-2 package mechanical data
mm
Dim.
Min.
4.30
0.03
1.17
8.95
4.98
0.50
0.78
1.14
10.00
7.40
2.49
15.30
1.27
4.93
6.85
1.50
2.60
0.20
0°
Typ.
Max.
4.70
0.20
1.37
9.35
5.18
0.90
0.85
1.70
10.40
7.80
2.69
15.80
1.40
5.23
7.25
1.70
2.90
0.60
8°
A
A1
C
D
e
E
F
F2
H
H1
J1
L
–
L1
L2
L3
L4
M
R
V
Figure 25.
H²PAK-2 recommended footprint
8159712_9
Note:
Dimensions are in mm.
DS5052
–
Rev 12
page 12/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
TO-247 package information
4.3
TO-247 package information
Figure 26.
TO-247 package outline
0075325_9
DS5052
–
Rev 12
page 13/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
TO-247 package information
Table 10.
TO-247 package mechanical data
mm
Dim.
Min.
4.85
2.20
1.0
Typ.
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
A
A1
b
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
ØP
ØR
S
3.55
4.50
5.30
3.65
5.50
5.70
DS5052
–
Rev 12
page 14/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
TO-3PF package information
4.4
TO-3PF package information
Figure 27.
TO-3PF package outline
7627132_6
DS5052
–
Rev 12
page 15/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
TO-3PF package information
Table 11.
TO-3PF mechanical data
mm
Dim.
Min.
5.30
2.80
3.10
1.80
0.80
0.65
1.80
10.30
Typ.
Max.
5.70
3.20
3.50
2.20
1.10
0.95
2.20
11.50
A
C
D
D1
E
F
F2
G
G1
H
5.45
15.30
9.80
15.70
10.20
23.20
26.70
44.40
4.70
L
10.00
L2
L3
L4
L5
L6
L7
N
22.80
26.30
43.20
4.30
24.30
14.60
1.80
24.70
15.00
2.20
R
3.80
4.20
Dia
3.40
3.80
DS5052
–
Rev 12
page 16/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Packing information
4.5
Packing information
Figure 28.
Tape outline
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
P2
Top cover
tape
D
T
E
F
W
K0
B0
A0
D1
P1
U
s
er direction o
f
f
e
ed
R
Bending radius
U
s
er direction o
f
f
e
ed
AM08852v2
DS5052
–
Rev 12
page 17/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Packing information
Figure 29.
Reel outline
T
REEL DIMENSIONS
40 mm min.
Access hole
At slot location
B
D
C
N
A
G measured
Tape slot
In core for
Full radius
At hub
Tape start
Table 12.
Tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
10.5
15.7
1.5
Max.
10.7
15.9
1.6
Min.
Max.
A0
B0
D
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base quantity
Bulk quantity
1000
1000
50
T
0.25
23.7
0.35
24.3
W
DS5052
–
Rev 12
page 18/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Ordering information
5
Ordering information
Table 13.
Order codes
Order codes
STFW3N150
STH3N150-2
STP3N150
Marking
3N150
Package
Packing
Tube
TO-3PF
2
H3N150
P3N150
3N150
T
a
pe and reel
H PAK-2
TO-220
TO-247
Tube
STW3N150
DS5052
–
Rev 12
page 19/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Revision history
Table 14.
Document revision history
Changes
Date
Revision
12-Jan-2007
1
2
3
4
5
6
First release
17-Apr-2007
14-May-2007
29-Aug-2007
09-Apr-2008
13-Feb-2009
Added new value on
Table 6
.
The document has been reformatted
RDS(on) value changed, updated
Figure 15
Added new package: TO-3PF
Added PTOT value for TO-3PF (
Table 2: Absolute maximum ratings
)
– Document status promoted from preliminary data to datasheet
– Removed TO-220FH package and mechanical data
01-Dec-2009
7
10-Dec-2009
29-Jun-2010
8
9
Corrected VISO value in
T
a
ble 2: Absolute maximum ratings
Corrected unit in
T
a
ble 3
.
– Minor text changes
– Modified:
Table 3
– Changed:
Figure 1
08-Feb-2013
10
2
– Added: H
PAK-2 package
– Modified:
Figure 1
– Updated:
Figure 18
,
19
,
20
and
21
– Updated:
Figure 27
and
T
a
ble 11
– Updated:
Section 4: Package mechanical data
– Minor text changes
18-Feb-2014
12-May-2020
11
12
Minor text changes.
DS5052
–
Rev 12
page 20/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
9
TO-220 type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
H²PAK-2 package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
TO-247 package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
13
TO-3PF package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
15
Packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
17
Ordering information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20
DS5052
–
Rev 12
page 21/22
STFW3N150, STH3N150-2, STP3N150, STW3N150
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of S
T
.
F
or additional information about ST trademarks, please refer to
www.st.com/trademarks
. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2020 STMicroelectronics – All rights reserved
DS5052
–
Rev 12
page 22/22
