STMicroelectronics-STP3N62K3
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STD3N62K3, STF3N62K3, STU3N62K3
Datasheet
N-channel 620
V
,
2
.2 Ω typ., 2.7 A MDmesh™ K3 Power MOSFE
T
s
i
n
DPAK, TO-220FP and IPAK packages
Features
V
R
max.
I
D
Order code
STD3N62K3
Package
DPAK
DS
DS(on)
2.7 A
2.7 A
2.7 A
STF3N62K3
620 V
2.5 Ω
TO-220FP
IPAK
STU3N62K3
D(2, TAB)
•
•
•
•
•
100% avalanche tested
Extremely high dv/dt capability
Very low intrinsic capacitance
G(1)
Improved diode reverse recovery characteristics
Zener-protected
Applications
S(3)
AM01475V1
•
Switching applications
Description
These MDmesh™ K3 Power MOSFE
T
s
a
re the result of improvements applied to
STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical
structure. These devices boast an extremely low on-resistance, superior dynamic
performance and high avalanche capability, rendering them suitable for the most
demanding applications.
Product status link
DS5888
–
Rev 3
–
July 2018
For further information contact your local STMicroelectronics sales office.
STD3N62K3, STF3N62K3, STU3N62K3
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Value
TO-220FP
620
Symbol
Parameter
Unit
DPAK
IPAK
V
V
Drain-source voltage
V
V
DS
Gate-source voltage
±30
GS
20
I
Drain current (continuous) at T
= 25 °C
2.7
1.7
10.8
45
2.7
1.7
10.8
45
A
D
D
C
I
Drain current (continuous) at T
= 100 °C
A
C
I
Drain current (pulsed)
A
DM
P
T
o
tal dissipation at T
= 25 °C
W
TOT
C
Gate-source human body model
(C = 100 p
F
, R =
1
.5 kΩ)
ESD
2.5
9
kV
Peak diode recovery voltage slope
V/ns
Insulation withstand voltage (RMS) from all three
leads to external heat sink
V
2500
V
ISO
(t = 1 s; T
= 25 °C)
C
T
Operating junction temperature range
Storage temperature range
j
-55 to 150
°C
T
stg
1. Limited
by maximum junction temperature.
2. Pulse
width limited by safe operating area.
3.
I
≤ 2.7 A, di/dt ≤ 200 A/μs, V
≤ V
, V
= 80% V
DD
.
(BR)DSS
SD
DSpeak
(BR)DSS
Table 2.
Thermal data
Value
TO-220FP
6.25
Symbol
Parameter
Unit
DPAK
IPAK
2.78
100
R
thj-case
Thermal resistance junction-case
Thermal resistance junction-ambient
Thermal resistance junction-pcb
2.78
°C/W
°C/W
°C/W
R
thj-amb
62.5
R
thj-pcb
50
1. When
mounted on 1inch² FR-4 board, 2 oz Cu.
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
2.7
Unit
A
I
Avalanche current, repetitive or not-repetitive
Single pulse avalanche energy
AR
E
100
mJ
AS
1. Pulse
width limited by T
max.
j
2. Starting
T =
25 °C, I
= I
, V
= 50 V.
j
D
AR
DD
DS5888
–
Rev 3
page 2/27
STD3N62K3, STF3N62K3, STU3N62K3
Electrical characteristics
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Drain-source
Test conditions
Min.
Typ.
Max.
Unit
V
I =
1 mA, V
= 0 V
D GS
620
V
(BR)DSS
breakdown voltage
V
V
= 0
V
, V
=
6
20 V
1
µA
µA
GS
DS
Zero gate voltage drain
current
I
I
DSS
50
GS
DS
C
Gate body leakage
current
V
DS
V
DS
V
GS
= 0
V
, V
=
±
20 V
±10
4.5
2.5
µA
V
GSS
GS
V
R
= V
, I
= 50 µA
Gate threshold voltage
3
3.75
2.2
GS(th)
GS
D
Static drain-source on
resistance
= 10
V
, I
=
1
.4 A
Ω
DS(on)
D
1. Defined
by design, not subject to production test.
Table 5.
Dynamic
Test conditions
Symbol
Parameter
Input capacitance
Output capacitance
Min.
Typ.
385
55
Max.
Unit
C
iss
C
oss
V
V
= 25 V, f = 1 MHz, V
= 0 V
–
–
pF
DS
GS
Reverse transfer
capacitance
C
rss
6
Equivalent output
capacitance
= 0 to 496
V
, V
= 0 V
C
oss eq.
–
–
32.3
–
–
pF
Ω
DS
GS
R
G
Intrinsic gate resistance
T
o
tal gate charge
f = 1 MHz open drain
10
13
Q
g
V
DD
= 496 V, I
= 3.4 A, V
= 0 to 10 V
D
GS
Q
Gate-source charge
Gate-drain charge
–
2.5
7.5
–
nC
gs
Q
gd
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80% V
.
DSS
Table 6.
Switching times
Test conditions
Symbol
Parameter
Min.
Typ.
9
Max.
Unit
t
Turn-on delay time
Rise time
V
R
= 310
V
, I
=
1
.7 A,
d(on)
DD
D
= 4.7 Ω, V
= 10 V
t
6.8
22
G
GS
r
–
–
ns
t
Turn-off delay time
Fall time
d(off)
t
15.6
f
DS5888
–
Rev 3
page 3/27
STD3N62K3, STF3N62K3, STU3N62K3
Electrical characteristics
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
Source-drain current
2.7
SD
–
–
A
Source-drain current
(pulsed)
I
10.8
1.6
SDM
V
I
I
= 2.7 A, V
= 0 V
GS
Forward on voltage
V
ns
nC
A
SD
SD
t
rr
= 2.7 A, di/dt = 100 A/µs
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
190
825
9
SD
V
Q
DD
–
–
rr
I
RRM
t
I
= 2.7 A, di/dt = 100 A/µs
SD
255
1100
10
ns
nC
A
rr
V
Q
DD
j
rr
I
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration = 300 μs, duty cycle 1.5%.
Table 8.
Gate-source Zener diode
Symbol
Parameter
Test conditions
= ±1 mA, I
= 0 A
Min.
Typ.
Max.
Unit
Gate-source breakdown
voltage
V
I
GS
30
–
–
V
(BR)GSO
D
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for
additional external componentry.
DS5888
–
Rev 3
page 4/27
STD3N62K3, STF3N62K3, STU3N62K3
Electrical characteristics curves
2.1
Electrical characteristics curves
Figure 2.
Thermal impedance for DPAK/IPAK
Figure 1.
Safe operating area for DPAK/IPAK
Figure 4.
Thermal impedance for TO-220FP
Figure 3.
Safe operating area for TO-220FP
GC20940_ZTH
K
δ=0.5
0.1
δ=0.2
0.05
10
-1
0.02
0.01
Single pulse
10
-2
10
-3
10
-4
10
-2
10
10
-1
10
0
-3
t
p
(s)
Figure 5.
Output characterisics
Figure 6.
Transfer characteristics
DS5888
–
Rev 3
page 5/27
STD3N62K3, STF3N62K3, STU3N62K3
Electrical characteristics curves
Figure 7.
Normalized V
(BR)DSS
vs temperature
Figure 8.
Static drain-source on-resistance
Figure 9.
Gate charge vs gate-source voltage
Figure 10.
Capacitance variations
Figure 12.
Normalized on-resistance vs temperature
Figure 11.
Normalized gate threshold voltage vs
temperature
DS5888
–
Rev 3
page 6/27
STD3N62K3, STF3N62K3, STU3N62K3
Electrical characteristics curves
Figure 13.
Source-drain diode forward characteristics
Figure 14.
Maximum avalanche energy vs temperature
DS5888
–
Rev 3
page 7/27
STD3N62K3, STF3N62K3, STU3N62K3
Test circuits
3
Test circuits
Figure 15.
Test circuit for resistive load switching times
Figure 16.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 17.
Test circuit for inductive load switching and
diode recovery times
Figure 18.
Unclamped inductive load test circuit
L
A
A
A
D
S
V
D
100 µH
D
fast
G
D.U.
T
.
B
diode
2200
3.3
µF
+
V
DD
1000
µF
B
µF
3.3
µF
B
+
V
DD
I
D
25 Ω
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01471v1
AM01470v1
Figure 20.
Switching time waveform
Figure 19.
Unclamped inductive waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
0
0
I
D
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DS5888
–
Rev 3
page 8/27
STD3N62K3, STF3N62K3, STU3N62K3
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
DS5888
–
Rev 3
page 9/27
STD3N62K3, STF3N62K3, STU3N62K3
DPAK (TO-252) type A package information
4.1
DPAK (TO-252) type A package information
Figure 21.
DPAK (TO-252) type A package outline
0068772_A_25
DS5888
–
Rev 3
page 10/27
STD3N62K3, STF3N62K3, STU3N62K3
DPAK (TO-252) type A package information
Table 9.
DPAK (TO-252) type A mechanical data
mm
Dim.
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
4.95
6.40
4.60
2.159
4.445
9.35
1.00
2.60
0.65
0.60
Typ.
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
5.25
6.60
4.80
2.413
4.699
10.10
1.50
3.00
0.95
1.00
A
A1
A2
b
b4
c
c2
D
D1
E
5.10
E1
e
4.70
2.286
4.572
e1
H
L
(L1)
L2
L4
R
2.80
0.80
0.20
V2
0°
8°
DS5888
–
Rev 3
page 11/27
STD3N62K3, STF3N62K3, STU3N62K3
DPAK (TO-252) type C package information
4.2
DPAK (TO-252) type C package information
Figure 22.
DPAK (TO-252) type C package outline
0068772_C_25
DS5888
–
Rev 3
page 12/27
STD3N62K3, STF3N62K3, STU3N62K3
DPAK (TO-252) type C package information
Table 10.
DPAK (TO-252) type C mechanical data
mm
Typ.
2.30
1.01
Dim.
Min.
2.20
0.90
0.00
0.72
5.13
0.47
0.47
6.00
5.25
6.50
4.70
2.186
9.80
1.40
Max.
2.38
1.10
0.10
0.85
5.46
0.60
0.60
6.20
A
A1
A2
b
b4
c
5.33
c2
D
6.10
6.60
D1
E
6.70
E1
e
2.286
10.10
2.386
10.40
1.70
H
L
1.50
L1
L2
L3
L4
L6
θ1
θ2
V2
2.90 REF
0.90
0.60
1.25
1.00
0.51 BSC
0.80
1.80 BSC
7°
5°
5°
0°
9°
9°
8°
7°
DS5888
–
Rev 3
page 13/27
STD3N62K3, STF3N62K3, STU3N62K3
DPAK (TO-252) type E package information
4.3
DPAK (TO-252) type E package information
Figure 23.
DPAK (TO-252) type E package outline
0068772_type-E_rev.25
DS5888
–
Rev 3
page 14/27
STD3N62K3, STF3N62K3, STU3N62K3
DPAK (TO-252) type E package information
Table 11.
DPAK (TO-252) type E mechanical data
mm
Typ.
Dim.
Min.
Max.
2.39
0.13
0.884
5.46
0.61
0.60
6.22
A
A2
b
2.18
0.65
4.95
0.46
0.46
5.97
5.21
6.35
4.32
b4
c
c2
D
D1
E
6.73
E1
e
2.286
4.572
e1
H
9.94
1.50
10.34
1.78
L
L1
L2
L4
2.74
0.89
1.27
1.02
Figure 24.
DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_25
DS5888
–
Rev 3
page 15/27
STD3N62K3, STF3N62K3, STU3N62K3
DPAK (TO-252) packing information
4.4
DPAK (TO-252) packing information
Figure 25.
DPAK (TO-252) tape outline
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
Top cover
tape
P2
D
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
U
s
er direction o
f
f
e
ed
R
Bending radius
U
s
er direction o
f
f
e
ed
AM08852v1
DS5888
–
Rev 3
page 16/27
STD3N62K3, STF3N62K3, STU3N62K3
DPAK (TO-252) packing information
Figure 26.
DPAK (TO-252) reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
Full radius
2.5mm min.width
AM06038v1
Table 12.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
6.8
Max.
7
Min.
Max.
A0
B0
B1
D
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
DS5888
–
Rev 3
page 17/27
STD3N62K3, STF3N62K3, STU3N62K3
TO-220FP package information
4.5
TO-220FP package information
Figure 27.
TO-220FP package outline
7012510_Rev_12_B
DS5888
–
Rev 3
page 18/27
STD3N62K3, STF3N62K3, STU3N62K3
TO-220FP package information
Table 13.
TO-220FP package mechanical data
mm
Typ.
Dim.
Min.
4.4
Max.
4.6
A
B
2.5
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
DS5888
–
Rev 3
page 19/27
STD3N62K3, STF3N62K3, STU3N62K3
IPAK (TO-251) type A package information
4.6
IPAK (TO-251) type A package information
Figure 28.
IPAK (TO-251) type A package outline
0068771_IK_typeA_rev14
DS5888
–
Rev 3
page 20/27
STD3N62K3, STF3N62K3, STU3N62K3
IPAK (TO-251) type A package information
Table 14.
IPAK (TO-251) type A package mechanical data
mm
Dim.
Min.
2.20
0.90
0.64
Typ.
Max.
2.40
1.10
0.90
0.95
5.40
A
A1
b
b2
b4
B5
c
5.20
0.30
0.45
0.48
6.00
6.40
0.60
0.60
6.20
6.60
c2
D
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
1.20
1.00
L1
L2
V1
0.80
10°
DS5888
–
Rev 3
page 21/27
STD3N62K3, STF3N62K3, STU3N62K3
IPAK (TO-251) type C package information
4.7
IPAK (TO-251) type C package information
Figure 29.
IPAK (TO-251) type C package outline
0068771_IK_typeC_rev14
DS5888
–
Rev 3
page 22/27
STD3N62K3, STF3N62K3, STU3N62K3
IPAK (TO-251) type C package information
Table 15.
IPAK (TO-251) type C package mechanical data
mm
Typ.
2.30
1.00
Dim.
Min.
2.20
0.90
0.66
Max.
2.35
1.10
0.79
0.90
5.43
0.59
0.59
6.20
5.55
6.70
4.95
2.30
4.60
16.78
9.60
1.20
1.25
7°
A
A1
b
b2
b4
c
5.23
0.46
0.46
6.00
5.20
6.50
4.60
2.20
4.40
16.18
9.00
0.80
0.90
3°
5.33
c2
D
6.10
5.37
6.60
4.78
2.25
4.50
16.48
9.30
1.00
1.08
5°
D1
E
E1
e
e1
H
L
L1
L2
θ1
θ2
1°
3°
5°
DS5888
–
Rev 3
page 23/27
STD3N62K3, STF3N62K3, STU3N62K3
Ordering information
5
Ordering information
Table 16.
Order codes
Order code
STD3N62K3
STF3N62K3
STU3N62K3
Marking
Package
Packing
T
a
pe and reel
Tube
DPAK
TO-220FP
IPAK
3N62K3
Tube
DS5888
–
Rev 3
page 24/27
STD3N62K3, STF3N62K3, STU3N62K3
Revision history
Table 17.
Document revision history
Date
Version
Changes
10-Jul-2008
1
2
First release
17-Aug-2009
Modified: marking of the
T
a
ble 1
The part numbers STB3N62K3 and STP3N62K3 have been moved to a
separate datasheet.
Removed maturity status indication from cover page. The document status is
production data.
Updated title and features in cover page.
02-Jul-2018
3
Minor text changes.
DS5888
–
Rev 3
page 25/27
STD3N62K3, STF3N62K3, STU3N62K3
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics curves
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
9
DPAK (TO-252) type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
DPAK (TO-252) type C package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
DPAK (TO-252) type E package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
13
DPAK (TO-252) packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
15
TO-220FP package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
17
IPAK (TO-251) type A package informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
19
IPAK (TO-251) type C package informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
21
Ordering information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
24
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25
DS5888
–
Rev 3
page 26/27
STD3N62K3, STF3N62K3, STU3N62K3
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of S
T
.
A
ll other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS5888
–
Rev 3
page 27/27
