STMicroelectronics-STP3NK80Z
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STD3NK80ZT4
Datasheet
N-channel 800
V
,
3
.6 Ω typ., 2.5 A SuperMESH Power MOSFET
in a DPAK package
Features
TAB
V
R
DS(on)
max.
I
D
Order code
DS
3
2
STD3NK80ZT4
800 V
4.5 Ω
2.5 A
1
•
•
•
•
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener-protected
DPAK
D(2, TAB)
Applications
G(1)
•
Switching applications
Description
S(3)
AM01476v1_tab
This high-voltage device is a Zener-protected N-channel Power MOSFET developed
using the SuperMESH technology by STMicroelectronics, an optimization of the well-
established PowerMESH. In addition to a significant reduction in on-resistance, this
device is designed to ensure a high level of dv/dt capability for the most demanding
applications.
Product status link
Product summary
Order code
STD3NK80ZT4
Marking
Package
Packing
D3NK80Z
DPAK
T
a
pe and reel
DS3337
–
Rev 8
–
June 2023
For further information contact your local STMicroelectronics sales office.
STD3NK80ZT4
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
800
±30
2.5
Unit
V
V
Drain-source voltage
Gate-source voltage
DS
GS
V
V
Drain current (continuous) at T
= 25 °C
C
I
D
A
A
Drain current (continuous) at T
= 100 °C
1.57
10
C
I
Drain current (pulsed)
DM
P
T
o
tal power dissipation at T
= 25 °C
70
2
W
kV
TOT
C
ESD
Gate-source, human body model (R = 1.5 kΩ, C = 100 pF)
Peak diode recovery voltage slope
4.5
V/ns
°C
T
Storage temperature range
stg
-55 to 150
T
Operating junction temperature range
°C
J
1. Pulse
width limited by safe operating area.
2. ≤
2.5 A, di/dt ≤ 200 A/μs, V
(Peak) < V
I
, V
= 640 V.
DD
SD
DS
(BR)DSS
Table 2.
Thermal data
Parameter
Symbol
Value
1.78
50
Unit
°C/W
°C/W
R
thJC
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
R
thJA
1. When
mounted on an 1-inch² FR-4, 2 Oz copper board.
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
2.5
Unit
A
I
Avalanche current, repetitive or not repetitive (pulse width is limited by T
max.)
AR
J
E
Single pulse avalanche energy (starting T
= 25 °C, I
= I
, V
= 50 V)
170
mJ
AS
J
D
AR
DD
DS3337
–
Rev 8
page 2/19
STD3NK80ZT4
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified.
Table 4.
On /off states
Test conditions
Symbol
Parameter
Min.
800
Typ. Max. Unit
V
V
V
V
V
V
V
= 0
V
, I
= 1
m
A
Drain-source breakdown voltage
V
(BR)DSS
GS
GS
GS
DS
DS
GS
D
= 0
V
, V
=
8
00
V
1
DS
I
Zero gate voltage drain current
µA
DSS
50
DS
C
I
= 0
V
, V
=
±
20 V
Gate-body leakage current
Gate threshold voltage
±10
4.5
4.5
µA
V
GSS
GS
V
= V
, I
= 50 µA
3
3.75
3.6
GS(th)
DS(on)
GS
D
R
= 10
V
, I
=
1
.25 A
D
Static drain-source on- resistance
Ω
1. Specified
by design, not tested in production.
Table 5.
Dynamic
Test conditions
Symbol
Parameter
Min.
Typ. Max. Unit
C
Input capacitance
–
–
–
–
–
–
–
485
57
–
–
–
–
–
–
–
pF
pF
pF
pF
nC
nC
nC
iss
C
oss
V
= 0
V
, V
=
2
5
V
, f = 1
M
Hz
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
T
o
tal gate charge
GS
DS
C
rss
11
C
V
V
= 0
V
, V
= 0
t
o 640 V
22
GS
DD
DS
oss eq
Q
19
g
= 640
V
, I
=
2
.5 A, V
= 0 to 10 V
D
GS
Q
Gate-source charge
Gate-drain charge
3.2
10.8
gs
Q
gd
1.
C
oss eq
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0
oss DS
to 80%.
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
t
Turn-on delay time
Rise time
–
–
–
–
17
27
36
40
–
–
–
–
ns
ns
ns
ns
V
= 400
V
, I
=
1
.25 A,
d(on)
DD
D
R
= 4.7 Ω, V
=10 V
t
G
GS
r
t
Turn-off delay time
Fall time
d(off)
t
f
DS3337
–
Rev 8
page 3/19
STD3NK80ZT4
Electrical characteristics
Table 7.
Source drain diode
Test conditions
Symbol
Parameter
Min.
Typ. Max. Unit
I
Source-drain current
Source-drain current (pulsed)
Forward on voltage
–
–
–
–
–
2.5
10
A
A
SD
I
SDM
V
I
I
= 2.5 A, V
= 0 V
1.6
V
SD
SD
GS
SD
t
= 2.5 A, di/dt = 100 A/µs
= 50 V
Reverse recovery time
Reverse recovery charge
384
1.6
ns
μC
rr
V
Q
DD
rr
I
Reverse recovery current
–
8.4
A
RRM
t
I
= 2.5 A, di/dt = 100 A/µs,
= 50 V , T
= 150 °C
Reverse recovery time
–
–
474
2.1
ns
rr
SD
V
Q
DD
J
Reverse recovery charge
μC
rr
I
Reverse recovery current
–
8.8
A
RRM
1. Pulsed:
pulse duration = 300 μs, duty cycle 1.5%.
2. Pulse
width is limited by safe operating area.
DS3337
–
Rev 8
page 4/19
STD3NK80ZT4
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Z
th
= k
R
thJC
*
δ = t
p
/
Ƭ
t
p
Ƭ
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Static drain-source on-resistance
Figure 6.
Gate charge vs gate-source voltage
DS3337
–
Rev 8
page 5/19
STD3NK80ZT4
Electrical characteristics (curves)
Figure 8.
Normalized gate threshold voltage vs
temperature
Figure 7.
Capacitance variations
Figure 9.
Normalized on-resistance vs temperature
Figure 10.
Source-drain diode forward characteristics
Figure 11.
Normalized V
(BR)DSS
vs temperature
Figure 12.
Maximum avalanche energy vs temperature
DS3337
–
Rev 8
page 6/19
STD3NK80ZT4
Test circuits
3
Test circuits
Figure 13.
Test circuit for resistive load switching times
Figure 14.
Test circuit for gate charge behavior
V
DD
12 V
47 kΩ
1 kΩ
100 nF
R
L
2200
μF
3.3
μF
V
DD
+
I
G
= CONST
2.7 kΩ
V
D
R
G
D.U.
T
.
100 Ω
V
GS
pulse width
+
D.U.
T
.
V
GS
V
G
2200
μF
pulse width
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 16.
Unclamped inductive load test circuit
Figure 15.
Test circuit for inductive load switching and
diode recovery times
A
A
A
L
D
S
100 µH
D
fast
diode
V
D
G
D.U.
T
.
B
2200
3.3
1000
µF
B
3.3
µF
B
µF
V
DD
+
µF
+
V
DD
25 Ω
I
D
G
D.U.
T
.
R
G
S
+
_
D.U.
T
.
V
i
pulse width
AM01470v1
AM01471v1
Figure 17.
Unclamped inductive waveform
Figure 18.
Switching time waveform
t
on
t
d(on)
t
off
t
d(off)
V
(BR)DSS
t
r
t
f
V
D
90%
90%
I
DM
V
DS
10%
V
GS
10%
I
D
0
0
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
DS3337
–
Rev 8
page 7/19
STD3NK80ZT4
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
4.1
DPAK (TO-252) type A package information
Figure 19.
DPAK (TO-252) type A package outline
0068772_A_34
DS3337
–
Rev 8
page 8/19
STD3NK80ZT4
DPAK (TO-252) type A package information
Table 8.
DPAK (TO-252) type A mechanical data
mm
Dim.
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
4.95
6.40
4.60
2.159
4.445
9.35
1.00
2.60
0.65
0.60
Typ.
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
5.25
6.60
4.80
2.413
4.699
10.10
1.50
3.00
0.95
1.00
A
A1
A2
b
b4
c
c2
D
D1
E
5.10
E1
e
4.70
2.286
4.572
e1
H
L
(L1)
L2
L4
R
2.80
0.80
0.20
V2
0°
8°
DS3337
–
Rev 8
page 9/19
STD3NK80ZT4
DPAK (TO-252) type C3 package information
4.2
DPAK (TO-252) type C3 package information
Figure 20.
DPAK (TO-252) type C3 package outline
0068772_type-C3_rev34
DS3337
–
Rev 8
page 10/19
STD3NK80ZT4
DPAK (TO-252) type C3 package information
Table 9.
DPAK (TO-252) type C3 mechanical data
mm
Typ.
2.30
Dim.
Min.
2.20
0.00
0.90
0.72
0.72
5.13
0.47
0.47
6.00
5.20
6.50
5.00
2.186
9.80
1.40
Max.
2.38
0.10
1.10
0.85
1.10
5.46
0.60
0.60
6.20
5.70
6.70
5.40
2.386
10.40
1.70
A
A1
A2
b
1.01
5.33
b2
b3
c
c2
D
6.10
5.45
D1
E
6.60
E1
e
5.20
2.286
10.10
1.50
H
L
L1
L2
L3
L4
L5
L6
θ
2.90 REF
0.51 BSC
0.90
0.60
0.15
1.25
1.00
0.75
0.80
1.80 REF
0°
5°
5°
8°
9°
9°
θ1
θ2
7°
7°
DS3337
–
Rev 8
page 11/19
STD3NK80ZT4
DPAK (TO-252) type E package information
4.3
DPAK (TO-252) type E package information
Figure 21.
DPAK (TO-252) type E package outline
0068772_typeE_rev.34
DS3337
–
Rev 8
page 12/19
STD3NK80ZT4
DPAK (TO-252) type E package information
Table 10.
DPAK (TO-252) type E mechanical data
mm
Typ.
Dim.
Min.
Max.
2.39
0.13
0.884
5.46
0.61
0.60
6.22
A
A2
b
2.18
0.65
4.95
0.46
0.46
5.97
5.21
6.35
4.32
b4
c
c2
D
D1
E
6.73
E1
e
2.286
4.572
e1
H
9.94
1.50
10.34
1.78
L
L1
L2
L4
2.74
0.89
1.27
1.02
DS3337
–
Rev 8
page 13/19
STD3NK80ZT4
DPAK (TO-252) type E package information
Figure 22.
DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_34
DS3337
–
Rev 8
page 14/19
STD3NK80ZT4
DPAK (TO-252) packing information
4.4
DPAK (TO-252) packing information
Figure 23.
DPAK (TO-252) tape outline
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
Top cover
tape
P2
D
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
U
s
er direction o
f
f
e
ed
R
Bending radius
U
s
er direction o
f
f
e
ed
AM08852v1
DS3337
–
Rev 8
page 15/19
STD3NK80ZT4
DPAK (TO-252) packing information
Figure 24.
DPAK (TO-252) reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
Full radius
2.5mm min.width
AM06038v1
Table 11.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
6.8
Max.
7
Min.
Max.
A0
B0
B1
D
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
DS3337
–
Rev 8
page 16/19
STD3NK80ZT4
Revision history
Table 12.
Document revision history
Changes
Date
Revision
09-Sep-2004
3
4
5
6
Complete document
10-Aug-2006
26-Feb-2009
07-Sep-2009
New template, no content change
Updated mechanical data
V
value has been corrected
ESD(G-S)
Updated
Section 1: “Electrical ratings”
,
Section 2: “Electrical characteristics”
and
Section 4:
“Package information”
.
06-Apr-2017
7
Minor text changes.
The part numbers STD3NK80Z-1, STF3NK80Z and STP3NK80Z have been moved to a
separate datasheet and the document has been updated accordingly.
27-Jun-2023
8
Minor text changes.
DS3337
–
Rev 8
page 17/19
STD3NK80ZT4
Contents
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
2
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
3
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
7
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
8
DPAK (TO-252) type A package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
DPAK (TO-252) type C3 package informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
10
DPAK (TO-252) type E package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
12
DPAK (TO-252) packing information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
15
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
17
DS3337
–
Rev 8
page 18/19
STD3NK80ZT4
IMPORTANT NOTICE – READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of S
T
.
F
or additional information about ST trademarks, refer to
www.st.com/trademarks
. All other product or service names
are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2023 STMicroelectronics – All rights reserved
DS3337
–
Rev 8
page 19/19
