STMicroelectronics-STP55NF06FP

Part #STMicroelectronics-STP55NF06FP
Download 
STMicroelectronics-STP55NF06FP
STB55NF06, STP55NF06, STP55NF06FP  
N-channel 60
V
,
0
.015
Ω
, 50 A S
T
r
ipFET™ II Power MOSFET in  
D²
P
A
K, TO-220 and TO-220FP packages  
Datasheet — production data  
Features  
TAB  
TAB  
Order code  
V

DSS

R

DS(on)

max.  
I

D  

STB55NF06  
STP55NF06  
3
50 A  
1
3
60 V  
< 0.018
Ω  
2
1
50 A

(1)  

D

2

PAK  
STP55NF06FP  
TO-220  
1. Refer
 
to soa for the max allowable current value on  
FP-type due to Rth value  
■
100% avalanche tested  
■
Exceptional dv/dt capability  
3
2
1
TO-220FP  
Applications  
■
Switching application  
Figure 1.  
Internal schematic diagram  
Description  
These Power MOSFETs have been developed  
using STMicroelectronics’ unique S
T
r
ipFET  
process, which is specifically designed to  
minimize input capacitance and gate charge. This  
renders the devices suitable for use as primary  
switch in advanced high-efficiency isolated DC-  
DC converters for telecom and computer  
applications, and applications with low gate  
charge driving requirements.  
$ꢅꢆ OR
4
!
“ꢇ  
‘ꢅꢁꢇ  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order code  
Marking  
Package  
D²
P
A
K  
Packaging  
STB55NF06  
STP55NF06  
B55NF06  
P55NF06  
T
a
pe and reel  
T
u
be  
TO-220  
TO-220  
STP55NF06FP  
P55NF06FP  
May 2012  
Doc ID 7544 Rev 11  
1/19  
This is information on a product in full production.  
19  

STB55NF06, STP55NF06, STP55NF06FP  
Electrical ratings  
1
Electrical ratings  
Table 2.  
Absolute maximum ratings  
Value  
Symbol  
Parameter  
Unit  
TO-220,  
D

2

P
A
K  
TO-220FP  
V

DS  

V

GS  

I

D  

Drain-source voltage  
60  
20  
V
V
Gate- source voltage  
Drain current (continuous) at T

C

= 25 °C  
Drain current (continuous) at T

C

= 100 °C  
Drain current (pulsed)  
50  
35  
50

(1)  

35

(1)  

200

(1)  

30  
A
A
I

D  

(2)  
I

DM  

P

tot  

200  
110  
0.73  
A
T
o
tal dissipation at T

C

= 25 °C  
Derating factor  
W
0.20  
W/°C  
mJ  
V/ns  
V
(3)  
E

AS  

Single pulse avalanche energy  
Peak diode recovery voltage slope  
Insulation withstand voltage (DC)  
Storage temperature  
340  
7
dv/dt

(4)  

V

ISO  

T

stg  

2500  
-55 to 175  
°C  
T

j  

Max. operating junction temperature  
1. Refer
 
to soa for the max allowable current value on FP-type due to Rth value  
2. Pulse
 
width limited by safe operating area.  
3. Starting
 
Tj = 25 °C, V
 
= 30 V, I
 
=25 A  
DD  
D
4.  
I
≤
50 A, di/dt
≤
400 A/µs, V
 
≤
V  
, Tj
≤
T  
(BR)DSS JMAX  
SD  
DD  
T
a
ble 3.  
Symbol  
Thermal data  
Value  
Parameter  
Unit  
D

2

P
A
K TO-220 TO-220FP  
1.36  
R

thj-case  

R

thj-amb  

Thermal resistance junction-case max  
Thermal resistance junction-ambient max  
5
°C/W  
°C/W  
62.5  
Doc ID 7544 Rev 11  
3/19  

Electrical characteristics  
STB55NF06, STP55NF06, STP55NF06FP  
2
Electrical characteristics  
(T

CASE

=25°C unless otherwise specified)  
T
a
ble 4.  
Symbol  
On/off states  
Parameter  
Test conditions  
I

D

= 250 µA, V

GS

=0  
Min. Typ. Max.
 
Unit  
Drain-source  
V

(BR)DSS  

60  
V
breakdown voltage  
Zero gate voltage  
V

DS

= 60 V  
1
µA  
µA  
I

DSS  

drain current (V

GS

= 0)  
V

DS

= 60
V
,
@ T

J

= 125 °C  
10  
Gate-body leakage  
current (V

DS

= 0)  
I

GSS  

V

GS  

V

DS

= V

GS

, I

D

= 250 µA  

GS

= 10
V
,
I

D

= 27.5 A  
=
20 V  
100 nA  
V

GS(th)  

R

DS(on)  

Gate threshold voltage  
2
3
4
V
Static drain-source  
on-resistance  
V
0.015 0.018  
Ω
T
a
ble 5.  
Symbol  
Dynamic  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
Input capacitance  
C

iss  

C

oss  

C

rss  

1300  
300  
pF  
pF  
pF  
V

DS

= 25
V
, f =
1
MHz,  
V

GS

= 0  
Output capacitance  
–
Reverse transfer  
capacitance  
105  
t

d(on)  

t

r  

t

d(off)  

t

f  

T
u
rn-on delay time  
Rise time  
20  
50  
36  
15  
ns  
ns  
ns  
ns  
V

DD

= 30
V
,
I

D

= 27.5 A  
R

G

= 4.7
Ω
V

GS

= 10 V  
(see

)  
–
–
T
u
rn-off delay time  
Fall time  
Q

g  

Q

gs  

Q

gd  

T
o
tal gate charge  
Gate-source charge  
Gate-drain charge  
V

DD

= 48
V
,
I

D

= 55 A,  
44.5  
10.5  
17.5  
60  
nC  
nC  
nC  
V

GS

= 10 V  
(see

)  
4/19  
Doc ID 7544 Rev 11  

STB55NF06, STP55NF06, STP55NF06FP  
Electrical characteristics  
T
a
ble 6.  
Symbol  
Source drain diode  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
Source-drain current  
I

SD  

50  
A
A
–
–
Source-drain current  
(pulsed)  
(1)  
I

SDM  

200  
(2)  
V

SD  

Forward on voltage  
I

SD

= 50 A, V

GS

= 0  
1.5  
V
I

SD

= 50 A,  
t

rr  

Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
75  
170  
4.5  
ns  
nC  
A
di/dt = 100 A/µs,  
V

DD

= 30
V
,
T

j

= 150 °C  
(see

)  
Q

rr  

–
I

RRM  

1. Pulse
 
width limited by safe operating area.  
2. Pulsed:
 
Pulse duration = 300 µs, duty cycle 1.5%  
Doc ID 7544 Rev 11  
5/19  

Electrical characteristics  
STB55NF06, STP55NF06, STP55NF06FP  
2.1  
Electrical characteristics (curves)  
Figure 2.  
Safe operating area for TO-220,  
D²
P
A
K  
Figure 3.
 
Thermal impedance for TO-220,  
D²
P
A
K  
Figure 4.
 
Safe operating area for TO-220FP  
Figure 5.
 
Thermal impedance TO-220FP  
Figure 6.
 
Output characterisics  
Figure 7.
 
Transfer characteristics  
6/19  
Doc ID 7544 Rev 11  

STB55NF06, STP55NF06, STP55NF06FP  
Figure 8.
 
Transconductance  
Electrical characteristics  
Figure 9.
 
Static drain-source on-resistance  
Figure 10.
 
Gate charge vs gate-source voltage
 
Figure 11.
 
Capacitance variations  
Figure 12.
 
Normalized gate threshold voltage
 
Figure 13.
 
Normalized on-resistance vs  
vs temperature
 
temperature  
Doc ID 7544 Rev 11  
7/19  

Electrical characteristics  
STB55NF06, STP55NF06, STP55NF06FP  
Figure 14.
 
Source-drain diode forward  
characteristics  
8/19  
Doc ID 7544 Rev 11  

STB55NF06, STP55NF06, STP55NF06FP  
Test circuit  
3
Test circuit  
Figure 15.
 
Switching times test circuit for  
resistive load  
Figure 16.
 
Gate charge test circuit  
V
DD  
12V  
47k
Ω  
1k
Ω  
100nF  
2200  
3
.
3  
μ
F  
R
L  
μ
F  
I
G
=CON
S
T  
V

DD  

100
Ω  
V

i

=20V=V
GMAX  
D.U.
T
.  
V

G  

V
D  
R
G  
V
G
S
 
2200  
μ
F  
D.U.
T
.  
2.7k
Ω  
47k
Ω  
P
W  
1k
Ω  
P
W  
AM0146
8
v1  
AM01469v1  
Figure 17.
 
Test circuit for inductive load  
switching and diode recovery times  
Figure 18.
 
Unclamped inductive load test  
circuit  
L
A
A
A
B
D
FA
S
T  
DIODE  
L=100
μ
H  
V
D  
G
2200  
μ
F  
D.U.
T
.  
B
3
.
3  
μ
F  
V
DD  
S
3
.
3  
μ
F  
1000  
μ
F  
B
V

DD  

25  
Ω
I
D  
D
G
R

G  

S
V
i  
D.U.
T
.  
P
w  
AM01470v1  
AM01471v1  
Figure 19.
 
Unclamped inductive waveform  
Figure 20.
 
Switching time waveform  
t
on  
td
on  
t
off  
td
off  
V
(BR)D
SS  
t
r  
t
f  
V
D  
90
%  
10
%  
90
%  
I
DM  
10
%  
V
D
S  
I
D  
0
0
V
DD  
V
DD  
90
%  
V

G
S  

10
%  
AM01472v1  
AM0147
3
v1  
Doc ID 7544 Rev 11  
9/19  

Package mechanical data  
STB55NF06, STP55NF06, STP55NF06FP  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in different grades of  
ECO
P
A
CK

®

packages, depending on their level of environmental compliance. ECO
P
ACK

®  

specifications, grade definitions and product status are available at:

.  
ECO
P
A
CK

®

is an ST trademark.  
T
a
ble 7.  
Dim.  
D²
P
A
K (TO-263) mechanical data  
mm  
Min.  
Typ.  
Max.  
A
A1  
b
4.40  
0.03  
0.70  
1.14  
0.45  
1.23  
8.95  
7.50  
10  
4.60  
0.23  
0.93  
1.70  
0.60  
1.36  
9.35  
b2  
c
c2  
D
D1  
E
10.40  
E1  
e
8.50  
2.54  
e1  
H
4.88  
15  
5.28  
15.85  
2.69  
2.79  
1.40  
1.75  
J1  
L
2.49  
2.29  
1.27  
1.30  
L1  
L2  
R
0.4  
V2  
0°  
8°  
10/19  
Doc ID 7544 Rev 11  
 

STB55NF06, STP55NF06, STP55NF06FP  
Figure 21.
 
D²
P
A
K (TO-263) drawing  
Package mechanical data  
0079457_T  
Figure 22.
 
D²
P
A
K footprint

(a)  

16.90  
12.20  
5.0
8
 
1.60  
3
.50  
9.75  
Footprint  
a. All
 
dimensions are in millimeters  
Doc ID 7544 Rev 11  
11/19  

Package mechanical data  
STB55NF06, STP55NF06, STP55NF06FP  
T
a
ble 8.  
Dim.  
TO-220 type A mechanical data  
mm  
Min.  
Typ.  
Max.  
A
b
4.40  
0.61  
1.14  
0.48  
15.25  
4.60  
0.88  
1.70  
0.70  
15.75  
b1  
c
D
D1  
E
1.27  
10  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
∅
P  
Q
3.50  
3.93  
16.40  
28.90  
3.75  
2.65  
3.85  
2.95  
12/19  
Doc ID 7544 Rev 11  

STB55NF06, STP55NF06, STP55NF06FP  
Figure 23.
 
TO-220 type A drawing  
Package mechanical data  
00159
88
_typeA_Rev_
S  
Doc ID 7544 Rev 11  
13/19  

Package mechanical data  
STB55NF06, STP55NF06, STP55NF06FP  
T
a
ble 9.  
Dim.  
TO-220FP mechanical data  
mm  
Min.  
Typ.  
Max.  
A
B
4.4  
2.5  
4.6  
2.7  
D
2.5  
2.75  
0.7  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
1
F1  
F2  
G
1.70  
1.70  
5.2  
G1  
H
2.7  
10  
10.4  
L2  
L3  
L4  
L5  
L6  
L7  
Dia  
16  
28.6  
9.8  
2.9  
15.9  
9
30.6  
10.6  
3.6  
16.4  
9.3  
3
3.2  
14/19  
Doc ID 7544 Rev 11  

STB55NF06, STP55NF06, STP55NF06FP  
Figure 24.
 
TO-220FP drawing  
Package mechanical data  
7012510_Rev_K_B  
Doc ID 7544 Rev 11  
15/19  

Packaging mechanical data  
STB55NF06, STP55NF06, STP55NF06FP  
5
Packaging mechanical data  
Table 10.
 
D²
P
A
K (TO-263) tape and reel mechanical data  
Tape  
Reel  
mm  
mm  
Dim.  
Dim.  
Min.  
Max.  
Min.  
Max.  
A0  
B0  
D
10.5  
15.7  
1.5  
10.7  
15.9  
1.6  
A
B
C
D
G
N
T
330  
1.5  
12.8  
20.2  
24.4  
100  
13.2  
26.4  
30.4  
D1  
E
1.59  
1.65  
11.4  
4.8  
1.61  
1.85  
11.6  
5.0  
F
K0  
P0  
P1  
P2  
R
3.9  
4.1  
11.9  
1.9  
12.1  
2.1  
Base qty  
Bulk qty  
1000  
1000  
50  
T
0.25  
23.7  
0.35  
24.3  
W
16/19  
Doc ID 7544 Rev 11  
 

STB55NF06, STP55NF06, STP55NF06FP  
Figure 25.
 
Tape  
Packaging mechanical data  
10 pitche
s
c
u
m
u
l
a
tive  
toler
a
nce on t
a
pe +/- 0.2 mm  
P0  
D
P2  
Top cover  
t
a
pe  
T
E
F
W
K0  
B0  
A0  
D1  
P1  
U
s
er direction of feed  
R
Bending r
a
di
us  
U
s
er direction of feed  
AM0
88
52v2  
Figure 26.
 
Reel  
T
REEL DIMEN
S
ION
S  
40mm min.  
Acce
ss
hole  
At
s
l ot
 
loc
a
tion  
B
D
C
N
A
G me
asu
red
a
t h
ub  
F
u
ll r
a
di
us  
T
a
pe
s
lot  
in core for  
t
a
pe
s
t
a
rt 25 mm min.  
width  
AM0
88
51v2  
Doc ID 7544 Rev 11  
17/19  

Revision history  
STB55NF06, STP55NF06, STP55NF06FP  
6
Revision history  
Table 11.
 
Document revision history  
Date  
Revision  
Changes  
19-Oct-2005  
02-Dec-2005  
28-Mar-2006  
26-Jun-2006  
7
8
Preliminary document  
New datasheet according to PCN MLD-PMT/05/1115  
Inserted ecopack indication  
9
10  
New template, no content change  
Removed part number STB55NF06-1 in I²
P
A
K package  

mechanical data

have been updated  
25-May-2012  
11  
Minor text changes  
18/19  
Doc ID 7544 Rev 11  

STB55NF06, STP55NF06, STP55NF06FP  
Please Read Carefully:  
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the  
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any  
time, without notice.  
All ST products are sold pursuant to ST’s terms and conditions of sale.  
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no  
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this  
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products  
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such  
third party products or services or any intellectual property contained therein.  
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED  
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED  
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS  
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.  
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT  
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING  
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,  
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS “AUTOMOTIVE  
GRADE” MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.  
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void  
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any  
liability of ST.  
ST and the ST logo are trademarks or registered trademarks of ST in various countries.  
Information in this document supersedes and replaces all information previously supplied.  
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.  
© 2012 STMicroelectronics – All rights reserved  
STMicroelectronics group of companies  
Australia – Belgium – Brazil – Canada – China – Czech Republic – Finland – France – Germany – Hong Kong – India – Israel – Italy – Japan –  
Malaysia – Malta – Morocco – Philippines – Singapore – Spain – Sweden – Switzerland – United Kingdom – United States of America  
Doc ID 7544 Rev 11  
19/19