STMicroelectronics-STP6NK60Z
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STB6NK60Z – STB6NK60Z-1
STP6NK60ZFP – STP6NK60Z
N-channel 600 V – 1
Ω
– 6 A – TO-220/TO-220FP/D
2
P
A
K/I
2
P
A
K
Zener-Protected SuperMESH™ Power MOSFET
Features
Type
V
DSS
R
DS(on)
I
D
P
W
STB6NK60Z
STB6NK60Z-1
STP6NK60ZFP
STP6NK60Z
600 V
600 V
600 V
600 V
< 1.2
Ω
6 A
110 W
< 1.2
Ω
6 A
110 W
< 1.2
Ω
6 A
30 W
< 1.2
Ω
6 A
110 W
3
3
2
1
1
D²
P
A
K
TO-220
I²
P
A
K
■
Extremely high dv/dt capability
■
100% avalanche tested
■
Gate charge minimized
3
3
2
2
1
1
TO-220FP
Application
■
Switching applications
Figure 1.
Internal schematic diagram
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Table 1.
Device summary
Order codes
Marking
Package
D²
P
A
K
Packaging
STB6NK60Z
STB6NK60Z-1
STP6NK60ZFP
STP6NK60Z
B6NK60Z
B6NK60Z
T
a
pe & reel
T
u
be
I²
P
A
K
TO-220FP
TO-220
P6NK60ZFP
P6NK60Z
T
u
be
T
u
be
November 2007
Rev 8
1/17
17
Contents
STB6NK60Z – STB6NK60Z-1 – STP6NK60ZFP – STP6NK60Z
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
STB6NK60Z – STB6NK60Z-1 – STP6NK60ZFP – STP6NK60Z
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
TO-220/D²/I²
P
A
K TO-220FP
V
DS
V
GS
Drain-source voltage (V
GS
= 0)
Gate-source voltage
600
30
V
V
A
6
(1)
I
D
I
D
Drain current (continuous) at T
C
= 25 °C
6
3.8
(1)
3.8
Drain current (continuous) at T
C
= 100 °C
A
A
(2)
24
(1)
Drain current (pulsed)
24
I
DM
P
TOT
T
o
tal dissipation at T
C
= 25 °C
Derating factor
110
30
W
W/°C
V
0.88
0.24
V
ESD(G-S)
G-S ESD (HBM C=100 p
F
,
R
=1.5 k
Ω
)
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
3500
4.5
dv/dt
(3)
V
ISO
V/ns
V
—
2500
T
j
Operating junction temperature
Storage temperature
-55 to 150
°C
T
stg
1. Limited
only by maximum temperature allowed
2. Pulse
width limited by safe operating area
3.
I
SD
≤
6 A, di/dt
≤
200 A/µs, V
DD
= 80% V
(BR)DSS
Table 3.
Symbol
Thermal data
Value
Parameter
Unit
TO-220/D²/I²
P
A
K TO-220FP
1.14 4.2
Rthj-case Thermal
resistance junction-case max
Rthj-amb Thermal
resistance junction-amb max
°C/W
°C/W
62.5
300
Maximum lead temperature for soldering
T
l
°C
purpose
Table 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
I
AR
6
A
Single pulse avalanche energy
E
AS
210
mJ
(starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
3/17
Electrical characteristics
STB6NK60Z – STB6NK60Z-1 – STP6NK60ZFP – STP6NK60Z
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
I
D
= 1 mA, V
GS
= 0
Min. Typ. Max. Unit
Drain-source
V
(BR)DSS
600
V
breakdown voltage
V
DS
= Max rating
Zero gate voltage
1
µA
µA
I
DSS
drain current (V
GS
= 0)
V
DS
= Max rating, T
C
= 125 °C
50
Gate-body leakage
current (V
DS
= 0)
I
GSS
V
GS
V
DS
= V
GS
, I
D
= 100 µA
GS
= 10
V
,
I
D
= 3 A
=
20 V
10
3.75 4.5
1.2
µA
V
GS(th)
R
DS(on)
Gate threshold voltage
3
V
Static drain-source on
resistance
V
1
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
V
DS
= 8 V I
D
= 3 A
Forward transconductance
5
S
g
fs
,
C
iss
C
oss
C
rss
pF
pF
pF
Input capacitance
Output capacitance
905
115
25
V
DS
= 25
V
, f = 1
M
Hz,
V
GS
= 0
Reverse transfer
capacitance
(2)
Equivalent output
capacitance
C
oss eq
.
V
GS
= 0, V
DS
= 0 to 480 V
56
pF
Q
g
Q
gs
Q
gd
V
DD
= 480
V
,
I
D
= 6 A,
V
GS
= 10 V
T
o
tal gate charge
Gate-source charge
Gate-drain charge
33
6
46
nC
nC
nC
17
1. Pulsed:
pulse duration=300µs, duty cycle 1.5%
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
4/17
STB6NK60Z – STB6NK60Z-1 – STP6NK60ZFP – STP6NK60Z
Electrical characteristics
Min. Typ. Max.
Unit
Table 7.
Symbol
Switching times
Parameter
Test conditions
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
14
14
47
19
ns
ns
ns
ns
V
DD
= 300
V
,
I
D
= 3 A
R
G
= 4.7
Ω
V
GS
= 10 V
T
u
rn-off delay time
Fall time
Test conditions
I
SD
= 6 A, V
GS
= 0
Table 8.
Symbol
Source drain diode
Parameter
Min Typ. Max Unit
I
SD
Source-drain current
6
A
A
V
(1)
Source-drain current (pulsed)
Forward on voltage
24
1.6
I
SDM
(2)
V
SD
t
rr
I
SD
= 6 A, di/dt = 100 A/µs
V
DD
= 50
V
,
T
j
= 150 °C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
445
2.7
12
ns
µC
A
Q
rr
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration= 300 µs, duty cycle 1.5%
Table 9.
Symbol
Gate-source zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
30
Gate-source breakdown
voltage
(1)
BV
GSO
Eggs 1
mA (open drain)
V
1. The
built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
5/17
Electrical characteristics
STB6NK60Z – STB6NK60Z-1 – STP6NK60ZFP – STP6NK60Z
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220/
I²
P
A
K/ D²
P
A
K
Figure 3.
Thermal impedance for TO-220/
I²
P
A
K/ D²
P
A
K
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Output characteristics
Figure 7.
Transfer characteristics
6/17
STB6NK60Z – STB6NK60Z-1 – STP6NK60ZFP – STP6NK60Z
Electrical characteristics
Figure 8.
Transconductance
Figure 9.
Static drain-source on resistance
Figure 10.
Gate charge vs gate-source voltage
Figure 11.
Capacitance variations
Figure 12.
Normalized gate threshold voltage
Figure 13.
Normalized on resistance vs
vs temperature
temperature
7/17
Electrical characteristics
STB6NK60Z – STB6NK60Z-1 – STP6NK60ZFP – STP6NK60Z
Figure 14.
Source-drain diode forward
characteristics
Figure 15.
Normalized B
vs temperature
VDSS
Figure 16.
Maximum avalanche energy vs
temperature
8/17
STB6NK60Z – STB6NK60Z-1 – STP6NK60ZFP – STP6NK60Z
Test circuit
3
Test circuit
Figure 17.
Switching times test circuit for
resistive load
Figure 18.
Gate charge test circuit
Figure 19.
Test circuit for inductive load
switching and diode recovery times
Figure 20.
Unclamped Inductive load test
circuit
Figure 21.
Unclamped inductive waveform
Figure 22.
Switching time waveform
9/17
Package mechanical data
STB6NK60Z – STB6NK60Z-1 – STP6NK60ZFP – STP6NK60Z
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
10/17
STB6NK60Z – STB6NK60Z-1 – STP6NK60ZFP – STP6NK60Z
Package mechanical data
TO-220 mechanical data
mm
Typ
inch
Dim
Min
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.4
9
15.25
4.60
0.
88
1.70
0.70
15.75
0.17
3
0.024
0.044
0.01
9
0.6
0.1
8
1
0.0
3
4
0.066
0.027
0.62
b
1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.
3
2
6.60
2.72
14
0.
393
0.0
9
4
0.1
9
4
0.04
8
0.244
0.0
9
4
0.511
0.1
3
7
0.40
9
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.
9
5
1.2
3
6.20
2.40
1
3
e1
F
H1
J1
L
L1
L20
L
3
0
∅
P
Q
3
.50
3
.
93
16.40
0.645
2
8
.
9
0
1.1
3
7
3
.75
3
.
8
5
2.
9
5
0.147
0.104
0.151
0.116
2.65
11/17
Package mechanical data
STB6NK60Z – STB6NK60Z-1 – STP6NK60ZFP – STP6NK60Z
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1
2 3
L5
L2
L4
12/17
STB6NK60Z – STB6NK60Z-1 – STP6NK60ZFP – STP6NK60Z
Package mechanical data
TO-262 (I
2
PAK) MECHANICAL DATA
mm.
TYP
inch
DIM.
MIN.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
MAX.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
MIN.
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
TYP.
MAX.
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
A
A1
b
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
13/17
Package mechanical data
STB6NK60Z – STB6NK60Z-1 – STP6NK60ZFP – STP6NK60Z
D
2
PAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
1
14/17
STB6NK60Z – STB6NK60Z-1 – STP6NK60ZFP – STP6NK60Z
Packing mechanical data
5
Packing mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504
0.520
0795
26.4 0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7
0.413 0.421
15.7 15.9
0.618 0.626
A0
B0
D
1.5
1.6 0.059
0.063
D1
E
1.59 1.61
0.062 0.063
1.65 1.85
0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449
0.456
5.0 0.189
0.197
4.1 0.153
0.161
12.1 0.468
0.476
2.1 0.075
0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35
0.0098 0.0137
23.7 24.3
0.933 0.956
W
* on sales type
15/17
Revision history
STB6NK60Z – STB6NK60Z-1 – STP6NK60ZFP – STP6NK60Z
6
Revision history
Table 10.
Document revision history
Date
Revision
Changes
14-Jan-2004
23-Aug-2005
04-Oct-2005
23-May-2007
22-Nov-2007
4
5
6
7
8
Initial electronic version
Inserted ecopack label
Modified header
Figure 11: Capacitance variations
has been updated
16/17
STB6NK60Z – STB6NK60Z-1 – STP6NK60ZFP – STP6NK60Z
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17/17
