STMicroelectronics-STP75N3LLH6
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STD75N3LLH6, STP75N3LLH6
STU75N3LLH6, STU75N3LLH6-S
N-channel 30
V
,
0
.0042
Ω
, 75 A, D
P
A
K, TO-220, I
P
A
K, Short I
P
A
K
S
T
r
ipFET™ VI
DeepG
A
T
E™ Power MOSFET
Features
TAB
TAB
Order codes
V
DSS
R
DS(on)
max
I
D
3
1
STD75N3LLH6
STP75N3LLH6
STU75N3LLH6
STU75N3LLH6-S
< 0.0055
Ω
3
2
D
P
A
K
1
30 V
75 A
I
P
A
K
< 0.0059
Ω
TAB
TAB
■
R
* Q
industry benchmark
g
DS(on)
3
3
2
2
■
Extremely low on-resistance R
■
High avalanche ruggedness
■
Low gate drive power losses
DS(on)
1
1
TO-220
Short I
P
A
K
Application
Figure 1.
Internal schematic diagram
Switching applications
D (
T
A
B or 2)
Description
This N-Channel Power MOSFET product utilizes
th
the 6
generation of design rules
of ST’s
proprietary S
T
r
ipFET™ technolog
y
,
w
ith a new
gate structure.The resulting Power MOSFET
G(1)
exhibits the lowest R
in all packages.
DS(on)
S
(
3
)
AM01474v1
Table 1.
Device summary
Order codes
Marking
Package
D
P
A
K
Packaging
STD75N3LLH6
STP75N3LLH6
STU75N3LLH6
STU75N3LLH6-S
T
a
pe and reel
TO-220
I
P
A
K
75N3LLH6
T
u
be
Short I
P
A
K
July 2011
Doc ID 15978 Rev 4
1/21
21
Contents
STD/P/U75N3LLH6, STU75N3LLH6-S
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
Doc ID 15978 Rev 4
STD/P/U75N3LLH6, STU75N3LLH6-S
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
30
20
Unit
V
DS
V
GS
Drain-source voltage (V
GS
= 0)
Gate-source voltage
V
V
(1)
I
D
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 70 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
75
56
A
I
D
I
D
A
47
A
(2)
I
DM
300
60
A
P
TOT
T
o
tal dissipation at T
C
= 25 °C
Derating factor
W
W/°C
0.4
T
j
Operating junction temperature
storage temperature
-55 to 175
°C
T
stg
1. The
value is rated according to Rthj-case
2. Pulse
width limited by safe operating area
Table 3.
Symbol
Thermal data
Value
D
P
A
K TO-220
I
P
A
K
Parameter
Unit
Short
I
P
A
K
Thermal resistance junction-case
(drain) (steady state)
R
thj-case
R
thj-amb
2.5
°C/W
Thermal resistance junction-amb
max
100
35
62.5
300
100
275
°C/W
°C/W
°C
(1)
R
thj-pcb
Thermal resistance junction-pcb max
Maximum lead temperature for
soldering purpose
T
J
275
1. When
mounted on FR-4 board of 1in², 2oz Cu. t < 10 sec
Doc ID 15978 Rev 4
3/21
Electrical characteristics
STD/P/U75N3LLH6, STU75N3LLH6-S
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
I
D
= 250 µA
Min.
Typ.
Max.
Unit
Drain-source
V
(BR)DSS
30
V
breakdown voltage (V
GS
= 0)
Zero gate voltage
V
DS
= 30 V
1
µA
µA
I
DSS
drain current (V
GS
= 0)
V
DS
=30 V T
C
= 125 °C
10
Gate-body leakage
current (V
DS
= 0)
I
GSS
V
GS
=
20 V
100
2.5
nA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
1
1.7
V
GS
= 10
V
,
I
D
= 37.5 A
SMD version
0.0042 0.0055
0.0046 0.0059
0.0065 0.008
0.0069 0.0084
Ω
Ω
Ω
Ω
V
GS
= 10
V
,
I
D
= 37.5 A
Static drain-source on
resistance
R
DS(on)
V
GS
= 4.5
V
,
I
D
= 37.5 A
SMD version
GS
= 4.5
V
,
I
D
= 37.5 A
V
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
1350
230
1690
290
2030
350
pF
pF
pF
V
DS
= 25
V
, f = 1
M
Hz,
V
GS
= 0
Reverse transfer
capacitance
140
176
210
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 15
V
,
I
D
= 75 A,
V
GS
= 4.5 V
17
8
23.8
11.2
8.4
nC
nC
nC
6
Pre V
th
gate-to-source
charge
Q
gs1
Q
gs2
V
DD
=15
V
,
I
D
= 75 A
V
GS
=5 V
3.9
4.1
5.5
5.7
nC
nC
Post V
th
gate-to-source
charge
f=1 MHz gate bias
Bias=0 test signal
R
G
Gate input resistance
1.25
1.7
2
Ω
level=20 mV open drain
4/21
Doc ID 15978 Rev 4
STD/P/U75N3LLH6, STU75N3LLH6-S
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ.
Max
Unit
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
9.5
30
37
12
ns
ns
ns
ns
V
DD
= 15
V
,
I
D
= 37.5 A
R
G
= 4.7
Ω
V
GS
= 5 V
–
–
T
u
rn-off delay time
Fall time
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
I
SD
75
A
A
–
–
Source-drain current
(pulsed)
(1)
I
SDM
300
(2)
V
SD
Forward on voltage
I
SD
= 37.5 A, V
GS
= 0
1.1
V
I
SD
= 75 A,
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
24
16.8
1.4
ns
nC
A
di/dt = 100 A/µs,
V
DD
= 24 V
Q
rr
–
I
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15978 Rev 4
5/21
Electrical characteristics
STD/P/U75N3LLH6, STU75N3LLH6-S
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
!-ꢁꢇꢇꢁꢉVꢈ
2
8
0dpc
)
$
ꢃ!ꢄ
K
δ
=0.5
ꢀꢁꢁ
0.2
0.1
ꢀꢁꢁS
0.05
10
-1
ꢀꢁ
ꢀ
0.02
Zth=k Rthj-c
δ
=tp/
τ
ꢀMS
4Jꢅꢀꢆꢇ #
4Cꢅꢈꢇ #
0.01
ꢀꢁMS
3INGLE
PULSE
tp
τ
S
ingle p
u
l
s
e
10
-2
10
-5
ꢁꢂꢀ
10
-2
10
-4
10
-1
10
–
3
ꢀꢁ
6
$3
ꢃ6ꢄ
p
(
s
)
t
ꢁꢂꢀ
ꢀ
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
AM05505v1
!-ꢁꢇꢇꢁꢊVꢈ
I
D
(A)
)
$
ꢃ!ꢄ
V
G
S
=10V
6V
ꢀꢈꢁ
ꢀꢁꢁ
ꢌꢁ
250
5V
200
150
100
4V
ꢊꢁ
ꢉꢁ
ꢈꢁ
ꢁ
50
0
3
V
1
ꢀ
4
5
V
D
S
(V)
ꢉ
6
‘3
ꢃ6ꢄ
0
2
3
ꢁ
ꢈ
ꢋ
Figure 6.
Normalized BV
vs temperature
Figure 7.
Static drain-source on resistance
DSS
AM05507v1
AM0550
8
v1
BV
D
SS
(norm)
R
D
S
(on)
(
Ω
)
4.
3
5
1.06
1.04
1.02
1.00
4.
3
0
4.25
4.20
4.15
4.10
4.05
0.9
8
0.96
0.94
0.92
4.00
0
20 25
3
0
5
10
15
-50
-25
0
25 50 75
T
J
(°C)
I
D
(A)
100 125
150
6/21
Doc ID 15978 Rev 4
STD/P/U75N3LLH6, STU75N3LLH6-S
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage
Figure 9.
Capacitance variations
AM05509v1
AM05510v1
V
G
S
C
(V)
(pF)
V
DD
=15V
12
10
8
2500
I
D
=75A
2000
1500
Ci
ss
6
1000
500
0
4
2
0
Co
ss
Cr
ss
20
40
0
20
50
Q
g
(nC)
V
D
S
(V)
0
10
3
0
10
Figure 10.
Normalized gate threshold voltage
Figure 11.
Normalized on resistance vs
vs temperature
temperature
AM05511v1
AM05512v1
R
D
S
(on)
V
G
S
(th)
(norm)
(norm)
1.
8
1.2
1.6
1.4
1.0
0.
8
0.6
1.2
1.0
0.
8
0.6
0.4
0.4
0.2
0.2
0
-50
-25
-50
-25
0
25 50 75
T
J
(°C)
0
25 50
75
T
J
(°C)
150
100
125 150
100
125
Figure 12.
Source-drain diode forward
characteristics
AM00
8
96v1
V
S
D
(V)
T
J
=-55°C
1.0
0.9
0.
8
T
J
=25°C
T
J
=150°C
0.7
0.6
0.5
0.4
0
10
20
3
0 40 50 60 70
I
S
D
(A)
Doc ID 15978 Rev 4
7/21
Test circuits
STD/P/U75N3LLH6, STU75N3LLH6-S
3
Test circuits
Figure 13.
Switching times test circuit for
resistive load
Figure 14.
Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k
Ω
2200
3
.
3
μ
F
R
L
μ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
D
R
G
V
G
S
2200
μ
F
D.U.
T
.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 15.
Test circuit for inductive load
switching and diode recovery times
Figure 16.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.
T
.
B
3
.
3
μ
F
V
DD
S
3
.
3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 17.
Unclamped inductive waveform
Figure 18.
Switching time waveform
t
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
td
on
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
8/21
Doc ID 15978 Rev 4
STD/P/U75N3LLH6, STU75N3LLH6-S
Test circuits
Figure 19.
Gate charge waveform
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Doc ID 15978 Rev 4
9/21
Package mechanical data
STD/P/U75N3LLH6, STU75N3LLH6-S
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
ECO
P
ACK is an ST trademark.
10/21
Doc ID 15978 Rev 4
STD/P/U75N3LLH6, STU75N3LLH6-S
Package mechanical data
Table 8.
Short I
P
A
K mechanical dimensions
mm
Typ
Dim.
Min
Max
A
A1
b
2.20
0.90
0.64
2.40
1.10
0.90
0.95
5.40
0.60
0.60
6.20
6.60
b2
b4
c
5.20
0.45
0.48
6.00
6.40
c2
D
E
e
2.25
0.80
e1
H
4.40
9.80
3.00
0.80
4.60
10.40
3.40
1.20
1.00
L
L1
L2
Figure 20.
Short I
P
A
K mechanical drawing
ꢌꢈꢆꢍꢆꢌꢀ ?!
Doc ID 15978 Rev 4
11/21
Package mechanical data
STD/P/U75N3LLH6, STU75N3LLH6-S
Table 9.
Dim.
D
P
A
K (TO-252) mechanical data
mm
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
1.50
L
L1
L2
L4
R
2.80
0.80
0.60
0°
1
0.20
V2
8°
(a)
Figure 21.
D
P
A
K footprint
6.7
3
1.
8
1.6
2.
3
2.
3
6.7
1.6
AM0
88
50v1
a. All
dimension are in millimeters
12/21
Doc ID 15978 Rev 4
STD/P/U75N3LLH6, STU75N3LLH6-S
Figure 22.
D
P
A
K (TO-252) drawing
Package mechanical data
006
8
772_H
Doc ID 15978 Rev 4
13/21
Package mechanical data
STD/P/U75N3LLH6, STU75N3LLH6-S
Table 10.
IPAK (TO-251) mechanical data
mm.
DIM.
min.
typ
max.
A
A1
b
2.20
0.90
0.64
2.40
1.10
0.90
0.95
5.40
b2
b4
5.20
0.3
B5
c
c2
D
0.45
0.48
6.00
6.40
0.60
0.60
6.20
6.60
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
1.20
1.00
L1
L2
V1
0.80
10
o
14/21
Doc ID 15978 Rev 4
STD/P/U75N3LLH6, STU75N3LLH6-S
Figure 23.
I
P
A
K (TO-251) drawing
Package mechanical data
006
8
771_H
AM09214V1
Doc ID 15978 Rev 4
15/21
Package mechanical data
STD/P/U75N3LLH6, STU75N3LLH6-S
Table 11.
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
16/21
Doc ID 15978 Rev 4
STD/P/U75N3LLH6, STU75N3LLH6-S
Figure 24.
TO-220 type A drawing
Package mechanical data
00159
88
_typeA_Rev_
S
Doc ID 15978 Rev 4
17/21
Packaging mechanical data
STD/P/U75N3LLH6, STU75N3LLH6-S
5
Packaging mechanical data
Table 12.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
B1
D
6.8
7
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qt
y
.
Bulk qt
y
.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
18/21
Doc ID 15978 Rev 4
STD/P/U75N3LLH6, STU75N3LLH6-S
Figure 25.
Tape for D
P
A
K (TO-252)
Packaging mechanical data
10 pitche
s
c
u
m
u
l
a
tive
toler
a
nce on t
a
pe +/- 0.2 mm
P0
D
Top cover
t
a
pe
P2
T
E
F
W
K0
B1
B0
For m
a
chine ref. only
incl
u
ding dr
a
ft
a
nd
A0
D1
P1
r
a
dii concentric
a
ro
u
nd B0
U
s
er direction of feed
R
Bending r
a
di
us
U
s
er direction of feed
AM0
88
52v1
Figure 26.
Reel for D
P
A
K (TO-252)
T
REEL DIMEN
S
ION
S
40mm min.
Acce
ss
hole
At
s
l ot
loc
a
tion
B
D
C
N
A
G me
asu
red
a
t h
ub
F
u
ll r
a
di
us
T
a
pe
s
lot
in core for
t
a
pe
s
t
a
rt 25 mm min.
width
AM0
88
51v2
Doc ID 15978 Rev 4
19/21
Revision history
STD/P/U75N3LLH6, STU75N3LLH6-S
6
Revision history
Table 13.
Document revision history
Date
Revision
Changes
01-Jul-2009
1
First issue.
– Added device in Short I
P
A
K.
02-Oct-2009
2
– Document status promoted from preliminary data to
datasheet.
– Added new package and mechanical data.
19-Apr-2011
04-Jul-2011
3
4
Updated: mechanical data
20/21
Doc ID 15978 Rev 4
STD/P/U75N3LLH6, STU75N3LLH6-S
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
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