STMicroelectronics-STP80NF03L-04

STP80NF03L  

N-CHANNEL 30V – 0.004

Ω

– 80A TO-220  

STripFET™ II MOSFET  

TYPE  

V

R

I

D

DSS  

DS(on)  

STP80NF03L  

30 V  

< 0.0045

Ω  

80 A  

■

■

■

■

TYPICAL R

 

(on) = 0.004

Ω  

DS  

EXCEPTIONAL dv/dt CAPABILITY  

100% AVALANCHE TESTED  

LOW THRESHOLD DRIVE  

3

2

1

TO-220  

DESCRIPTION  

This Power MOSFET is the latest development of ST-  

Microelectronics unique “Single Feature Size™” strip-  

based process. The resulting transistor shows ex-  

tremely high packing density for low on-resistance,  

rugged avalance characteristics and less critical  

alignment steps therefore a remarkable manufactur-  

ing reproducibility.  

INTERNAL SCHE

M

ATIC DIAGRAM  

APPLICATIONS  

■

■

■

■

HIGH CURRENT, HIGH SPEED SWITCHING  

MOTOR CONTROL, AUDIO AMPLIFIERS  

DC-DC & DC-AC CONVERTERS  

AUTOMOTIVE ENVIRONMENT  

(INJECTION,ABS, AIR-BAG ,LAMPDRIVERS  

Etc.)  

ORDERING INFORMATION  

SALES TYPE  

MARKING  

PACKAGE  

TO-220  

P

A

CKAGING  

STP80NF03L  

P80NF03L  

TUBE  

.

January 2004  

1/8  

STP80NF03L  

ABSOLUTE MAXIMUM RATINGS  

Symbol  

Parameter  

Value  

30  

Unit  

V

V

DS  

Drain-source Voltage (V

 

= 0)  

GS  

V

DGR  

Drain-gate Voltage (R

 

= 20 k

Ω

)  

30  

V

GS  

V

Gate-source Voltage  

± 20  

80  

V

GS  

I

D

D

(#)  

(#)  

Drain Current (continuous) at T

 

= 25

°

C  

A

C

I

Drain Current (continuous) at T

 

= 100

°

C  

80  

A

C

I

( )  

Drain Current (pulsed)  

320  

A

DM  

P

TOT  

Total Dissipation at T

 

= 25

°

C  

300  

W

C

Derating Factor  

2.0  

W/

°

C  

V/ns  

°

C  

°

C  

dv/dt (1)  

Peak Diode Recovery Voltage Slope  

Storage

T

e

mperature  

2.0  

T

stg  

–

65 to 175  

175  

T

Max. Operating Junction

T

e

mperature  

j

(#) Current Limited by Package.  

( )

 

Pulse width limited by safe operating area.  

(1) I

 

≤

80A, di/dt

≤

240 A/µs, V

 

= 24V ; T

 

≤

T  

JMAX.  

SD  

DD  

j

THERMAL DATA  

Rthj-case  

Rthj-amb  

Thermal Resistance Junction-case Max  

0.5  

62.5  

300  

°

C/W  

°

C/W  

°

C  

Thermal Resistance Junction-ambient Max  

Maximum Lead

T

emperature For Soldering Purpose Typ  

T

l

AVALANCHE CHARACTERISTICS  

Symbol  

Parameter  

Max Value  

Unit  

I

AR  

Avalanche Current, Repetitive or Not-Repetitive  

40  

A

(pulse width limited by T

 

max)  

j

E

AS  

Single Pulse Avalanche Energy  

2.3  

J

(starting T

 

= 25

°

C, I

 

= I

 

, V

 

= 20 V)  

j

D

AR  

DD  

ELECTRICAL CHARACTERISTICS

(T  

= 25

°

C UNLESS OTHERWISE SPECIFIED)  

CASE  

OFF/ON  

Symbol  

Parameter  

Drain-source  

Test Conditions  

Min.  

Typ.  

Max.  

Unit  

V

I

= 250 µA, V

 

= 0  

30  

V

(BR)DSS  

D

GS  

Breakdown Voltage  

I

Zero Gate Voltage  

V

V

V

= Max Rating  

1

µA  

µA  

nA  

DSS  

DS  

Drain Current (V

 

= 0)  

GS  

= Max Rating, T

 

= 125

°

C  

10  

DS  

GS  

C

I

Gate-body Leakage  

= ± 20V  

±100  

GSS  

Current (V

 

= 0)  

DS  

V

GS(th)  

V

DS  

= V

 

, I

 

= 250 µA  

2.5  

V

Gate Threshold Voltage  

1

1.5  

GS  

D

R

DS(on)  

Static Drain-source On  

Resistance  

V

V

= 10

V

, I

 

= 40 A  

0.0045  

0.0065  

Ω

Ω

0.004  

0.0045  

GS  

D

= 4.5

V

, I

 

= 40 A  

GS  

D

2/8  

STP80NF03L  

ELECTRICAL CHARACTERISTICS

(CONTINUED)  

DYNAMIC  

Symbol  

Parameter  

T

e

st Conditions  

Min.  

Typ.  

Max.  

Unit  

g

(1)  

Forward Transconductance  

V

=15 V I

 

= 15 A  

50  

S

fs  

DS  

, D  

C

V

DS  

= 25V, f = 1 MHz, V

 

= 0  

Input Capacitance  

Output Capacitance  

5500  

1670  

290  

pF  

pF  

pF  

iss  

GS  

C

oss  

C

Reverse Transfer  

Capacitance  

rss  

SWITCHING ON  

Symbol  

Parameter  

T

e

st Conditions  

Min.  

Typ.  

Max.  

Unit  

t

V

R

= 15

V

, I

 

= 40 A  

Turn-on Delay Time  

30  

ns  

d(on)  

DD  

D

= 4.7

Ω

V =

 

4.5 V  

G

GS  

t

r

Rise Time  

270  

ns  

(Resistive Load, Figure 3)  

Q

T

o

tal Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

V

V

= 24

V

, I

 

= 80A,  

= 4.5V  

85  

23  

40  

110  

nC  

nC  

nC  

g

DD  

D

Q

gs  

gd  

GS  

Q

SWITCHING OFF  

Symbol  

Parameter  

T

e

st Conditions  

Min.  

Typ.  

Max.  

Unit  

t

Turn-off-Delay Time  

Fall Time  

V

= 15

V

, I

 

= 40 A,  

110  

95  

ns  

ns  

d(off)  

DD  

D

t

f

R =

 

4.7

Ω,

V =

 

4.5V  

G GS  

(Resistive Load, Figure 3)  

t

Off-Voltage Rise Time  

Fall Time  

Cross-over Time  

125  

75  

125  

ns  

ns  

ns  

V

R

= 24 V, I

 

= 80 A,  

r(Voff)  

clamp  

D

t

f

= 4.7

Ω,

V =

 

4.5V  

G

GS  

t

c

(Inductive Load, Figure 5)  

SOURCE DRAIN DIODE  

Symbol  

Parameter  

Test Conditions  

Min.  

Typ.  

Max.  

80  

Unit  

A

I

SD  

Source-drain Current  

I

(1)  

(2)  

Source-drain Current (pulsed)  

Forward On Voltage  

320  

1.5  

A

SDM  

V

I

I

= 80 A, V

 

= 0  

V

SD  

SD  

SD  

GS  

t

rr  

Reverse Recovery Time  

Reverse Recovery Charge  

Reverse Recovery Current  

75  

0.15  

4

ns  

µC  

A

= 80 A, di/dt = 100 A/µs,  

Q

V

= 20 V, T

 

= 150

°

C  

rr  

RRM  

DD  

j

I

(see test circuit, Figure 5)  

Note: 1. Pulsed:

 

Pulse duration = 300 µs, duty cycle 1.5 %.  

2. Pulse

 

width limited by safe operating area.  

3/8  

STP80NF03L  

Safe Operating Area  

Thermal Impedance  

Output Characteristics  

Transfer Characteristics  

Transconductance  

Static Drain-source On Resistance  

4/8  

STP80NF03L  

Gate Charge vs Gate-source Voltage  

Capacitance Variations  

Normalized Gate Threshold Voltage vs Temp.  

Normalized On Resistance vs Temperature  

NormalizedBreakdownVoltagev

s

T

emperature  

Source-drain Diode Forward Characteristics  

5/8  

STP80NF03L  

Fig. 1:

Unclamped Inductive Load Test Circuit  

Fig. 2:

Unclamped Inductive Waveform  

Fig. 3:

Switching Times Test Circuit For  

Fig. 4:

Gate Charge test Circuit  

Resistive Load  

Fig. 5:

Test Circuit For Inductive Load Switching  

And Diode Recovery Times  

6/8  

STP80NF03L  

TO-220 MECHANICAL DATA  

mm.  

inch  

TYP.  

DIM.  

MIN.  

4.40  

0.61  

1.15  

0.49  

15.25  

10  

TYP  

MAX.  

4.60  

0.88  

1.70  

0.70  

15.75  

10.40  

2.70  

5.15  

1.32  

6.60  

2.72  

14  

MIN.  

0.173  

0.024  

0.045  

0.019  

0.60  

MAX.  

0.181  

0.034  

0.066  

0.027  

0.620  

0.409  

0.106  

0.202  

0.052  

0.256  

0.107  

0.551  

0.154  

A

b

b1  

c

D

E

0.393  

0.094  

0.194  

0.048  

0.244  

0.094  

0.511  

0.137  

e

2.40  

4.95  

1.23  

6.20  

2.40  

13  

e1  

F

H1  

J1  

L

L1  

L20  

L30  

ø

P  

Q

3.50  

3.93  

16.40  

28.90  

0.645  

1.137  

3.75  

2.65  

3.85  

2.95  

0.147  

0.104  

0.151  

0.116  

7/8  

STP80NF03L  

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the  

consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from  

its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications  

mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information  

previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or  

systems without express written approval of STMicroelectronics.  

The ST logo is a registered trademark of STMicroelectronics  

All other names are the property of their respective owners  

© 2004 STMicroelectronics – All Rights Reserved  

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