STMicroelectronics-STP80NF06
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STP80NF06 – STB80NF06
STW80NF06
N-channel 60V – 0.0065
Ω
– 80A
TO-220/D
2
P
A
K/TO-247
S
T
r
ipFET II™ Power MOSFET
Features
Type
V
DSS
R
DS(on)
I
D
STB80NF06
60V
60V
60V
<0.008
Ω
<0.008
Ω
<0.008
Ω
80A
80A
80A
3
STP80NF06
STW80NF06
2
TO-220
1
TO-247
■
100% avalanche tested
■
Low threshold drive
3
1
Description
D²
P
A
K
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibilit
y
.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STB80NF06T4
STP80NF06
STW80NF06
B80NF06
P80NF06
W80NF06
D²
P
A
K
TO-220
TO-247
T
a
pe & reel
T
u
be
T
u
be
May 2007
Rev 5
1/14
14
Contents
STP80NF06 – STB80NF06 – STW80NF06
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STP80NF06 – STB80NF06 – STW80NF06
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
DS
V
GS
Drain-source voltage (v
gs
= 0)
Gate- source voltage
60
20
V
V
(1)
I
D
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
80
A
I
D
80
A
(2)
I
DM
320
300
2
A
P
TOT
T
o
tal dissipation at T
C
= 25°C
Derating factor
W
W/°C
mJ
(3)
E
AS
Single pulse avalanche energy
Storage temperature
870
T
stg
T
j
– 65 to 175
175
°C
Max. operating junction temperature
1. Current
limited by wire bonding
2. Pulse
width limited by safe operating area
3. Starting
T
j
= 25°C, I
D
= 40A, V
DD
=40V
Table 2.
Thermal data
R
thj-case
Thermal resistance junction-case Max
R
thj-a
Thermal resistance junction-ambient Max
0.5
°C/W
°C/W
62.5
Maximum lead temperature for soldering
purpose
T
l
300
°C
3/14
Electrical characteristics
STP80NF06 – STB80NF06 – STW80NF06
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source
V
(BR)DSS
I
D
= 250 µA, V
GS
= 0
V
DS
= Max rating
60
V
Breakdown voltage
1
µA
µA
Zero gate voltage
I
DSS
V
DS
=Max rating,
T
C
=125°C
Drain current (V
GS
= 0)
10
Gate-body leakage
current (V
DS
= 0)
I
GSS
V
GS
= 20V
100
4
nA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10
V
,
I
D
= 40A
2
3
Static drain-source on
resistance
R
DS(on)
0.0065 0.008
Ω
Table 4.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ. Max. Unit
(1)
g
fs
Forward transconductance
Input capacitance
V
DS
= 2.5V I
=18A
20
S
, D
C
iss
3850
800
pF
pF
C
oss
Output capacitance
V
DS
= 25
V
, f = 1
M
Hz,
V
GS
= 0
Reverse transfer
capacitance
C
rss
250
pF
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
115
24
150
nC
nC
nC
V
DD
= 80
V
,
I
D
= 80A,
V
GS
= 10V
46
1. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5%
Table 5.
Symbol
Switching times
Parameter
Test conditions
Min. Typ. Max.
Unit
V
DD
= 27
V
,
I
D
= 40A
t
d(on)
t
r
T
u
rn-on delay time
Rise time
25
85
ns
ns
R
G
= 4.7
Ω
V
GS
= 10V
DD
= 27
V
,
I
D
= 40A,
V
ns
ns
t
d(off)
t
f
T
u
rn-off-delay time
Fall time
70
25
R
G
= 4.7
Ω
,
V
GS
= 10V
t
d(off)
Off-voltage Rise Time
Fall Time
85
75
ns
ns
ns
Vclamp =44
V
,
I
D
=80A
R
G
= 4.7
Ω
,
V
GS
= 10V
t
f
t
c
Cross-over Time
110
4/14
STP80NF06 – STB80NF06 – STW80NF06
Electrical characteristics
Min. Typ. Max Unit
Table 6.
Symbol
Source drain diode
Parameter
Test conditions
I
SD
Source-drain current
80
320
1.5
A
A
V
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
(2)
V
SD
I
SD
= 80A, V
GS
= 0
I
SD
= 80A, V
DD
= 50V
di/dt = 100A/µs,
T
j
= 150°C
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
80
250
6.4
ns
nC
A
Q
rr
I
RRM
1. Pulse
width limited by safe operating area.
2. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5%
5/14
Electrical characteristics
STP80NF06 – STB80NF06 – STW80NF06
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/14
STP80NF06 – STB80NF06 – STW80NF06
Electrical characteristics
Figure 7.
Gate charge vs. gate-source voltage
Figure 8.
Capacitance variations
Figure 9.
Normalized gate threshold voltage
Figure 10.
Normalized on resistance vs.
vs. temperature
temperature
Figure 11.
Source-drain diode forward
characteristics
Figure 12.
Normalized breakdown voltage vs.
tj
7/14
Test circuit
STP80NF06 – STB80NF06 – STW80NF06
3
Test circuit
Figure 13.
Switching times test circuit for
resistive load
Figure 14.
Gate charge test circuit
Figure 15.
Test circuit for inductive load
switching and diode recovery times
Figure 16.
Unclamped Inductive load test
circuit
Figure 17.
Unclamped inductive waveform
Figure 18.
Switching time waveform
8/14
STP80NF06 – STB80NF06 – STW80NF06
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
9/14
Package mechanical data
STP80NF06 – STB80NF06 – STW80NF06
TO-220 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
10/14
STP80NF06 – STB80NF06 – STW80NF06
Package mechanical data
D
2
PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
TYP.
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
4.4
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
1
11/14
Package mechanical data
STP80NF06 – STB80NF06 – STW80NF06
TO-247 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.85
2.20
1.0
MAX.
5.15
MIN.
0.19
MAX.
0.20
A
A1
b
2.60
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.102
0.055
0.094
0.134
0.03
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
0.793
0.620
E
e
5.45
18.50
5.50
0.214
0.728
0.216
L
14.20
3.70
14.80
4.30
0.560
0.14
0.582
0.17
L1
L2
øP
øR
S
3.55
4.50
3.65
5.50
0.140
0.177
0.143
0.216
12/14
STP80NF06 – STB80NF06 – STW80NF06
Revision history
5
Revision history
Table 7.
Date
Revision history
Revision
Changes
09-Sep-2004
21-Jun-2005
1
2
Complete version
The word “S
T
r
ipFET” in the description title on the web was been
corrected
17-Aug-2006
31-Jan-2007
03-May-2007
3
4
5
The document has been reformatted
R
DS(on)
Max value has been changed
13/14
STP80NF06 – STB80NF06 – STW80NF06
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14/14
