STMicroelectronics-STP80NF10

Part #STMicroelectronics-STP80NF10
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STMicroelectronics-STP80NF10
STB80NF10  
STP80NF10  
N-channel 100
V
,
0
.012
Ω
, 80 A, TO-220, D

2

P
A
K  
low gate charge S
T
r
ipFET™ II Power MOSFET  
Features  
R

DS(on)  

max  
Type  
V

DSS  

I

D  

STP80NF10  
STB80NF10  
100 V  
100 V  
< 0.015
Ω
 
< 0.015
Ω  
80 A  
80 A  
3
3
■
Exceptional dv/dt capability  
■
100% Avalanche tested  
2
1
1
TO-220  
D²
P
A
K  
■
Application oriented characterization  
Applications  
■
Switching applications  
Description  
Figure 1.  
Internal schematic diagram  
This Power MOSFET series realized with  
STMicroelectronics unique S
T
r
ipFET process has  
specifically been designed to minimize input  
capacitance and gate charge. It is therefore  
suitable as primary switch in advanced high-  
efficiency isolated DC-DC converters for telecom  
and computer application. It is also intended for  
any application with low gate charge drive  
requirements.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
TO-220  
D²
P
A
K  
Packaging  
STP80NF10  
P80NF10@  
B80NF10@  
T
u
be  
STB80NF10T4  
T
a
pe and reel  
April 2009  
Doc ID 6958 Rev 18  
1/14  
14  

STB80NF10, STP80NF10  
Electrical ratings  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
Unit  
V

DS  

V

GS  

Drain-source voltage (V

GS

= 0)  
Gate- source voltage  
100  
20  
V
V
(1)  
I

D  

Drain current (continuous) at T

C

= 25 °C  
Drain current (continuous) at T

C

= 100 °C  
Drain current (pulsed)  
80  
A
(1)  
I

D  

80  
A
(2)  
I

DM  

320  
300  
2
A
P

TOT  

T
o
tal dissipation at T

C

= 25 °C  
Derating factor  
W
W/°C  
V/ns  
mJ  
dv/dt

(3)  

Peak diode recovery voltage slope  
Single pulse avalanche energy  
7
(4)  
E

AS  

350  
T

stg  

T
j  
Storage temperature  
-55 to 175  
°C  
Operating junction temperature  
1. Limited
 
by package  
2. Pulse
 
width limited by safe operating area  
3. I

SD

< 80 A, di/dt < 300 A/µs, V

DD

= 80% V

(BR)DSS  

4. Starting
 
Tj = 25 °C, I

D

= 40 A, V

DD

= 50 V  
Table 3.  
Symbol  
Thermal resistance  
Parameter  
Value  
Unit  
Rthj-case Thermal
 
resistance junction-case max  
Rthj-amb Thermal
 
resistance junction-ambient max  
0.5  
62.5  
300  
°C/W  
°C/W  
°C  
T

l  

Maximum lead temperature for soldering purpose  
Doc ID 6958 Rev 18  
3/14  

Electrical characteristics  
STB80NF10, STP80NF10  
2
Electrical characteristics  
(T  
=25 °C unless otherwise specified)  
CASE  
Table 4.  
Symbol  
On/off states  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
Drain-source  
V

(BR)DSS  

I

D

= 250 µA, V

GS

= 0  
100  
V
breakdown voltage  
Zero gate voltage  
V

DS

= Max rating  
500  
10  
nA  
µA  
I

DSS  

drain current (V

GS

= 0)  
V

DS

= Max rating @125°C  
Gate-body leakage  
current (V

DS

= 0)  
I

GSS  

V

GS

= 20
 
V  
100  
4
nA  
V
V

GS(th)

Gate threshold voltage  
V

DS

= V

GS

, I

D

= 250 µA  
V

GS

= 10
V
,
I

D

= 40 A  
2
3
Static drain-source on  
resistance  
R

DS(on)  

0.012  
0.015  
Ω
Table 5.  
Symbol  
Dynamic  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
(1)  
g

fs  

Forward transconductance
 
V

DS

= 25 V

,

I

D

=40 A  
Input capacitance  
–
50  
S
C

iss  

C

oss  

C

rss  

5500  
700  
pF  
pF  
pF  
V

DS

= 25
V
, f = 1
M
Hz,  
V

GS

= 0  
Output capacitance  
–
–
Reverse transfer  
capacitance  
175  
Q

g  

Q

gs  

Q

gd  

T
o
tal gate charge  
Gate-source charge  
Gate-drain charge  
135  
23  
182  
nC  
nC  
nC  
V

DD

= 50
V
,
I

D

= 80 A,  
V

GS

= 10 V  
51.3  
1. Pulsed:
 
pulse duration = 300 µs, duty cycle 1.5%  
Table 6.  
Symbol  
Switching times  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
t

d(on)  

t

r  

t

d(off)  

t

f  

T
u
rn-on delay time  
Rise time  
26  
80  
ns  
V

DD

= 50
V
,
I

D

= 40 A,  
R

G

= 4.7
Ω
,
V

GS

=10 V  
ns  
–
–
T
u
rn-off-delay time  
Fall time  
116  
60  
ns  
ns  
4/14  
Doc ID 6958 Rev 18  
 

STB80NF10, STP80NF10  
Electrical characteristics  
Min. Typ. Max Unit  
Table 7.  
Symbol  
Source drain diode  
Parameter  
Test conditions  
I

SD  

Source-drain current  
–
–
–
80  
320  
1.3  
A
A
V
(1)  
I

SDM  

V

SD  

t

rr  

Source-drain current (pulsed)  
Forward on voltage  
(2)  
I

SD

= 80 A, V

GS

= 0  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
I

SD

=80 A, V

DD

= 50 V  
di/dt = 100 A/µs,  
T

j

=150 °C  
106  
450  
8.5  
ns  
nC  
A
Q

rr  

–
I

RRM  

1. Pulse
 
width limited by safe operating area  
2. Pulse
 
duration=300µs, duty cycle 1.5%  
Doc ID 6958 Rev 18  
5/14  

Electrical characteristics  
STB80NF10, STP80NF10  
2.1  
Electrical characteristics (curves)  
Figure 2.
 
Safe operating area  
Figure 3.
 
Thermal impedance  
Figure 4.
 
Output characteristics  
Figure 5.
 
Transfer characteristics  
Figure 6.
 
Transconductance  
Figure 7.
 
Static drain-source on resistance  
6/14  
Doc ID 6958 Rev 18  

STB80NF10, STP80NF10  
Electrical characteristics  
Figure 8.
 
Gate charge vs. gate-source voltage
 
Figure 9.
 
Capacitance variations  
Figure 10.
 
Normalized gate threshold voltage
 
Figure 11.
 
Normalized on resistance vs.  
vs. temperature  
temperature  
Figure 12.
 
Source-drain diode forward  
characteristics  
Doc ID 6958 Rev 18  
7/14  

Test circuits  
STB80NF10, STP80NF10  
3
Test circuits  
Figure 13.
 
Switching times test circuit for  
resistive load  
Figure 14.
 
Gate charge test circuit  
V
DD  
12V  
47k
Ω
 
100nF  
1k
Ω  
2200  
3
.
3  
µ
F  
R
L  
µ
F  
I
G
=CON
S
T  
V

DD  

100
Ω  
V

i

=20V=V
GMAX  
D.U.
T
.  
V
D  
R
G  
V
G
S
 
2200  
µ
F  
D.U.
T
.  
V

G  

2.7k
Ω  
47k
Ω  
P
W  
1k
Ω  
P
W  
AM0146
8
v1  
AM01469v1  
Figure 15.
 
Test circuit for inductive load  
switching and diode recovery times  
Figure 16.
 
Unclamped inductive load test  
circuit  
L
A
A
A
B
D
FA
S
T  
DIODE  
L=100
µ
H  
V
D  
G
2200  
µ
F  
D.U.
T
.  
B
3
.
3  
µ
F  
V
DD  
S
3
.
3  
µ
F  
1000  
µ
F  
B
V

DD  

25  
Ω
I
D  
D
G
R

G  

S
V
i  
D.U.
T
.  
P
w  
AM01470v1  
AM01471v1  
Figure 17.
 
Unclamped inductive waveform  
Figure 18.
 
Switching time waveform  
t
on  
td
on  
t
off  
td
off  
V
(BR)D
SS  
t
r  
t
f  
V
D  
90
%  
10
%  
90
%  
I
DM  
10
%  
V
D
S  
I
D  
0
0
V
DD  
V
DD  
90
%  
V

G
S  

10
%  
AM01472v1  
AM0147
3
v1  
8/14  
Doc ID 6958 Rev 18  

STB80NF10, STP80NF10  
Package mechanical data  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in different grades of  
®
®
ECO
P
A
CK packages,
 
depending on their level of environmental compliance. ECO
P
A
CK  
is an ST trademark.  
Doc ID 6958 Rev 18  
9/14  

Package mechanical data  
STB80NF10, STP80NF10  
TO-220 mechanical data  
mm  
inch  
Dim  
Min  
Typ  
Max  
Min  
Typ  
Max  
A
b
4.40  
0.61  
1.14  
0.4
8
 
15.25  
4.60  
0.
88  
1.70  
0.70  
15.75  
0.17
3  
0.024  
0.044  
0.01
9  
0.6  
0.1
8
1  
0.0
3
4  
0.066  
0.027  
0.62  
b
1  
c
D
D1  
E
1.27  
0.050  
10  
10.40  
2.70  
5.15  
1.
3
2  
6.60  
2.72  
14  
0.
393  
0.0
9
4  
0.1
9
4  
0.04
8  
0.244  
0.0
9
4  
0.511  
0.1
3
7  
0.40
9  
0.106  
0.202  
0.051  
0.256  
0.107  
0.551  
0.154  
e
2.40  
4.
9
5  
1.2
3  
6.20  
2.40  
1
3  
e1  
F
H1  
J1  
L
L1  
L20  
L
3
0  
∅
P  
Q
3
.50  
3
.
93  
16.40  
0.645  
2
8
.
9
0  
1.1
3
7  
3
.75  
3
.
8
5  
2.
9
5  
0.147  
0.104  
0.151  
0.116  
2.65  
10/14  
Doc ID 6958 Rev 18  

STB80NF10, STP80NF10  
Package mechanical data  
D²
P
A
K (TO-26
3
) mechanical data  
mm  
inch  
Dim  
Min  
Typ  
Max  
Min  
Typ  
Max  
A
A1  
b
4.40  
0.0
3  
0.70  
1.14  
0.45  
1.2
3  
8
.
9
5  
7.50  
10  
4.60  
0.2
3  
0.
93  
1.70  
0.60  
1.
3
6  
9
.
3
5  
0.17
3  
0.001  
0.027  
0.045  
0.017  
0.04
8  
0.
3
52  
0.2
9
5  
0.
39
4  
0.
33
4  
0.1
8
1  
0.00
9  
0.0
3
7  
0.067  
0.024  
0.05
3  
0.
3
6
8  
b
2  
c
c2  
D
D1  
E
10.40  
0.40
9  
E1  
e
8
.50  
2.54  
0.1  
e1  
H
4.
88  
15  
5.2
8  
15.
8
5  
2.6
9  
2.7
9  
1.40  
1.75  
0.1
9
2  
0.5
9
0  
0.0
99  
0.0
9
0  
0.05  
0.20
8  
0.624  
0.106  
0.110  
0.055  
0.06
9  
J1  
L
2.4
9  
2.2
9  
1.27  
1.
3
0  
L1  
L2  
R
0.051  
0.4  
0.016  
V2  
0°  
8
°  
0°  
8
°  
0079457_M  
Doc ID 6958 Rev 18  
11/14  

Packaging mechanical data  
STB80NF10, STP80NF10  
5
Packaging mechanical data  
2
D PAK FOOTPRINT  
TAPE AND REEL SHIPMENT  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8  
20.2  
24.4  
100  
0.059  
13.2 0.504
 
0.520  
0795  
26.4 0.960
 
1.039  
3.937  
30.4  
1.197  
BASE QTY  
BULK QTY  
1000  
TAPE MECHANICAL DATA  
1000  
mm  
inch  
DIM.  
MIN. MAX. MIN. MAX.  
10.5 10.7
 
0.413 0.421  
15.7 15.9
 
0.618 0.626  
A0  
B0  
D
1.5  
1.6 0.059
 
0.063  
D1  
E
1.59 1.61
 
0.062 0.063  
1.65 1.85
 
0.065 0.073  
F
11.4  
4.8  
3.9  
11.9  
1.9  
50  
11.6 0.449
 
0.456  
5.0 0.189
 
0.197  
4.1 0.153
 
0.161  
12.1 0.468
 
0.476  
2.1 0.075
 
0.082  
1.574  
K0  
P0  
P1  
P2  
R
T
0.25 0.35
 
0.0098 0.0137  
23.7 24.3
 
0.933 0.956  
W
* on sales type  
12/14  
Doc ID 6958 Rev 18  

STB80NF10, STP80NF10  
Revision history  
6
Revision history  
Table 8.  
Date  
Document revision history  
Revision  
Changes  
04-Nov-2003  
13-Dec-2004  
16-Dec-2004  
27-Jan-2005  
22-Feb-2005  
28-Feb-2005  
01-Mar-2005  
06-Apr-2006  
25-Jan-2007  
17-Nov-2008  
15-Apr-2009  
8
New datasheet according to PCN DSG-TRA/03/382  
D²
P
A
K inserted  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
@ inserted in table 2 for TO-220 marking  
New value in table 3  
Id value changed  
New value in table 3  
Vgs value changed  
The document has been reformatted  
T
y
po mistake on page 1 (order codes)  
E

AS

value has been updated  
I

DSS

value changed in

Doc ID 6958 Rev 18  
13/14  

STB80NF10, STP80NF10  
Please Read Carefully:  
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the  
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any  
time, without notice.  
All ST products are sold pursuant to ST’s terms and conditions of sale.  
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no  
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this  
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products  
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such  
third party products or services or any intellectual property contained therein.  
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED  
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED  
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS  
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.  
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT  
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING  
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,  
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS “AUTOMOTIVE  
GRADE” MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.  
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void  
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any  
liability of ST.  
ST and the ST logo are trademarks or registered trademarks of ST in various countries.  
Information in this document supersedes and replaces all information previously supplied.  
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.  
© 2009 STMicroelectronics – All rights reserved  
STMicroelectronics group of companies  
Australia – Belgium – Brazil – Canada – China – Czech Republic – Finland – France – Germany – Hong Kong – India – Israel – Italy – Japan –  
Malaysia – Malta – Morocco – Philippines – Singapore – Spain – Sweden – Switzerland – United Kingdom – United States of America  
14/14  
Doc ID 6958 Rev 18