STMicroelectronics-STP80NF55-06
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STB80NF55-06 – STB80NF55-06-1
STP80NF55-06 – STP80NF55-06FP
N-channel 55V – 0.005
Ω
– 80A – TO-220 /FP – I
2
P
A
K – D
2
P
A
K
S
T
r
ipFET™ II Power MOSFET
General features
Type
V
DSS
R
DS(on)
I
D
STB80NF55-06
STB80NF55-06-1
STP80NF55-06
55V
55V
55V
55V
<0.0065
Ω
80A
(1)
<0.0065
Ω
80A
(1)
<0.0065
Ω
80A
(1)
<0.0065
Ω
60A
(1)
3
3
2
2
1
1
TO-220
TO-220FP
STP80NF55-06FP
1. Limited
by package
■
Exceptional dv/dt capability
■
100% avalanche tested
3
1
3
2
1
D²
P
A
K
I²
P
A
K
■
Application oriented characterization
Description
Internal schematic diagram
This Power MOSFET is the latest development of
STMicroelectronis unique “Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibilit
y
.
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STB80NF55-06T4
STB80NF55-06-1
STP80NF55-06
B80NF55-06
B80NF55-06-1
P80NF55-06
D²
P
A
K
I²
P
A
K
T
a
pe & reel
T
u
be
TO-220
TO-220FP
T
u
be
STP80NF55-06FP
P80NF55-06FP
T
u
be
October 2006
Rev 8
1/17
17
Contents
STB80NF55-06 – STB80NF55-06-1 – STP80NF55-06 – STP80NF55-06FP
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
STB80NF55-06 – STB80NF55-06-1 – STP80NF55-06 – STP80NF55-06FP
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
TO-220 / D²/ I²
P
A
K
TO-220FP
V
DS
V
GS
Drain-source voltage (V
GS
= 0)
Gate-source voltage
55
20
V
V
A
(1)
60
(2)
42
(2)
I
D
Drain current (continuous) at T
C
= 25°C
80
80
(1)
I
D
Drain current (continuous) at T
C
=100°C
Drain current (pulsed)
A
(3)
240
(2)
45
I
DM
320
300
2
A
W
P
TOT
T
o
tal dissipation at T
C
= 25°C
Derating factor
0.30
W/°C
V/ns
J
dv/dt
(4)
Peak diode recovery voltage slope
7
(5)
E
AS
Single pulse avalanche energy
Insulation withstand voltage (DC)
1.3
V
ISO
—
2500
V
T
J
Operating junction temperature
Storage temperature
-55 to 175
°C
T
stg
1. Limited
by Package
2. Limited
only by maximum temperature allowed
3. Pulse
width limited by safe operating area
4. )
I
SD
≤
80A, di/dt
≤
400A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
5. Starting
T
J
= 25
o
C, I
D
= 40A, V
DD
= 45V
Table 2.
Symbol
Thermal data
Value
Parameter
Unit
TO-220 / D²/ I²
P
A
K
TO-220FP
0.5 3.33
R
thJC
R
thJA
Thermal resistance junction-case max
Thermal resistance junction-ambient max
°C/W
°C/W
62.5
300
Maximum lead temperature for soldering
purpose
T
l
°C
3/17
Electrical characteristics
STB80NF55-06 – STB80NF55-06-1 – STP80NF55-06 – STP80NF55-06FP
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Symbol
On/off states
Parameter
Test conditions
Min. Typ.
Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
I
D
= 250
µ
A, V
GS
= 0
55
V
V
DS
= Max rating,
1
µA
µA
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
V
DS
= Max rating @125°C
10
Gate body leakage current
(V
DS
= 0)
I
GSS
V
GS
= 20V
100
4
nA
V
GS(th)
R
DS(on)
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10
V
,
I
D
= 40A
Gate threshold voltage
2
3
V
Static drain-source on
resistance
0.005 0.0065
Ω
Table 4.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ.
Max. Unit
(1)
V
DS
=15
V
,
I
D
= 40A
Forward transconductance
150
S
g
fs
C
iss
C
oss
C
rss
Input capacitance
4400
1020
350
pF
pF
pF
Output capacitance
V
DS
=25
V
,
f
=1 MHz, V
GS
=0
Reverse transfer
capacitance
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
nC
nC
nC
142
29
60.5
189
V
DD
= 44
V
,
I
D
= 80A
V
GS
=10V
1. Pulsed:
pulse duration=300µs, duty cycle 1.5%
Table 5.
Symbol
Switching times
Parameter
Test conditions
Min. Typ.
Max. Unit
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
27
155
125
65
ns
ns
ns
ns
V
DD
= 50
V
,
I
D
= 40A,
R
G
=4.7
Ω
,
V
GS
=10V
T
u
rn-off delay time
Fall time
4/17
STB80NF55-06 – STB80NF55-06-1 – STP80NF55-06 – STP80NF55-06FP
Electrical characteristics
Min Typ. Max Unit
Table 6.
Symbol
Source drain diode
Parameter
Test conditions
I
SD
Source-drain current
80
320
1.5
A
A
V
(1)
Source-drain current (pulsed)
Forward on voltage
I
SDM
(2)
I
SD
=80A, V
GS
=0
V
SD
t
rr
I
SD
=80A,
Reverse recovery time
Reverse recovery charge
Reverse recovery current
100
0.32
6.5
ns
µC
A
Q
rr
di/dt = 100A/µs,
V
DD
=35
V
,
T
J
= 150°C
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration=300µs, duty cycle 1.5%
5/17
Electrical characteristics
STB80NF55-06 – STB80NF55-06-1 – STP80NF55-06 – STP80NF55-06FP
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area for TO-220/
D²
P
A
K/ I²
P
A
K
Figure 2.
Thermal impedance for TO-220/
D²
P
A
K/ I²
P
A
K
Figure 3.
Safe operating area for TO-220FP
Figure 4.
Thermal impedance for TO-220FP
Figure 5.
Output characterisics
Figure 6.
Transfer characteristics
6/17
STB80NF55-06 – STB80NF55-06-1 – STP80NF55-06 – STP80NF55-06FP
Electrical characteristics
Figure 7.
Transconductance
Figure 8.
Static drain-source on resistance
Figure 9.
Gate charge vs gate-source voltage
Figure 10.
Capacitance variations
Figure 11.
Normalized gate threshold voltage
Figure 12.
Normalized on resistance vs
vs temperature
temperature
7/17
Electrical characteristics
STB80NF55-06 – STB80NF55-06-1 – STP80NF55-06 – STP80NF55-06FP
Figure 13.
Source-drain diode forward
characteristics
Figure 14.
Normalized B
vs temperature
VDSS
8/17
STB80NF55-06 – STB80NF55-06-1 – STP80NF55-06 – STP80NF55-06FP
Test circuit
3
Test circuit
Figure 15.
Switching times test circuit for
resistive load
Figure 16.
Gate charge test circuit
Figure 17.
Test circuit for inductive load
switching and diode recovery times
Figure 18.
Unclamped Inductive load test
circuit
Figure 19.
Unclamped inductive waveform
9/17
Package mechanical data
STB80NF55-06 – STB80NF55-06-1 – STP80NF55-06 – STP80NF55-06FP
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
10/17
STB80NF55-06 – STB80NF55-06-1 – STP80NF55-06 – STP80NF55-06FP
Package mechanical data
TO-220 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
11/17
Package mechanical data
STB80NF55-06 – STB80NF55-06-1 – STP80NF55-06 – STP80NF55-06FP
D
2
PAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
1
12/17
STB80NF55-06 – STB80NF55-06-1 – STP80NF55-06 – STP80NF55-06FP
Package mechanical data
TO-262 (I
2
PAK) MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
MAX.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
MIN.
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
MAX.
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
A
A1
b
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
13/17
Package mechanical data
STB80NF55-06 – STB80NF55-06-1 – STP80NF55-06 – STP80NF55-06FP
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1
2 3
L5
L2
L4
14/17
STB80NF55-06 – STB80NF55-06-1 – STP80NF55-06 – STP80NF55-06FP Packaging mechanical data
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504
0.520
0795
26.4 0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7
0.413 0.421
15.7 15.9
0.618 0.626
A0
B0
D
1.5
1.6 0.059
0.063
D1
E
1.59 1.61
0.062 0.063
1.65 1.85
0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449
0.456
5.0 0.189
0.197
4.1 0.153
0.161
12.1 0.468
0.476
2.1 0.075
0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35
0.0098 0.0137
23.7 24.3
0.933 0.956
W
* on sales type
15/17
Revision history
STB80NF55-06 – STB80NF55-06-1 – STP80NF55-06 – STP80NF55-06FP
6
Revision history
Table 7.
Date
Revision history
Revision
Changes
21-Jun-2004
13-Mar-2005
20-Jul-2006
24-Oct-2006
5
6
7
8
Complete version
Package inserted: I
2
P
A
K
New template, no content change
16/17
STB80NF55-06 – STB80NF55-06-1 – STP80NF55-06 – STP80NF55-06FP
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17/17
