STMicroelectronics-STP8NK80ZFP
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STP8NK80Z – STP8NK80ZFP
STW8NK80Z
N-channel 800V – 1.3
Ω
– 6.2A – TO-220 /TO-220FP/TO-247
Zener-protected SuperMESH™ Power MOSFET
Features
Type
V
DSS
R
DS(on)
I
D
STP8NK80Z
STP8NK80ZFP
STW8NK80Z
800 V
800 V
800 V
< 1.5
Ω
< 1.5
Ω
< 1.5
Ω
6.2 A
6.2 A
6.2 A
3
2
1
TO-220
TO-220FP
■
Extremely high dv/dt capability
■
100% avalanche tested
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Very good manufacturing repeatability
TO-247
Description
Figure 1.
Internal schematic diagram
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Application
■
Switching applications
Table 1.
Device summary
Order codes
Marking
Package
TO-220
Packaging
STP8NK80Z
STP8NK80ZFP
STW8NK80Z
P8NK80Z
P8NK80ZFP
W8NK80Z
T
u
be
T
u
be
T
u
be
TO-220FP
TO-247
July 2007
Rev 5
1/15
15
Contents
STP8NK80Z – STP8NK80ZFP – STW8NK80Z
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
STP8NK80Z – STP8NK80ZFP – STW8NK80Z
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
TO-220 – TO-247
Parameter
Unit
TO-220FP
V
DS
V
GS
I
D
Drain-source voltage (V
GS
= 0)
Gate- source voltage
800
30
V
V
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
6.2
3.9
6.2
(1)
3.9
(1)
24.8
(1)
30
A
A
I
D
(2)
I
DM
24.8
140
1.12
A
P
TOT
T
o
tal dissipation at T
C
= 25°C
Derating factor
W
0.24
W/°C
V
V
ESD(G-S)
Gate source ESD(HBM-C=100p
F
,
R
=1.5K
Ω
)
dv/dt
(3)
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
4000
4.5
V/ns
three leads to external heat sink
V
ISO
–
2500
V
(t=1s; Tc= 25°C)
T
j
Max operating Junction temperature
Storage temperature
-55 to 150
°C
T
stg
1. Limited
only by maximum temperature allowed
2. Pulse
width limited by safe operating area
3. I
SD
≤
6.2 A, di/dt
≤
200A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
TO-220 TO-220FP
TO-247
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-ambient max
0.89
4.2
0.89
50
°C/W
°C/W
62.5
Maximum lead temperature for soldering
purpose
T
l
300
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj Max)
I
AR
6.2
A
Single pulse avalanche energy
E
AS
300
mJ
(starting Tj=25°C, Id=Iar, Vdd=50V)
3/15
Electrical characteristics
STP8NK80Z – STP8NK80ZFP – STW8NK80Z
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
I
D
=1mA, V
GS
= 0
Min. Typ. Max. Unit
Drain-source
V
(BR)DSS
800
V
Breakdown voltage
V
DS
= Max rating
Zero gate voltage
1
µA
µA
I
DSS
Drain current (V
GS
= 0)
V
DS
= Max rating, @125°C
50
Gate-body leakage
Current (V
DS
= 0)
I
GSS
V
GS
V
DS
= V
GS
, I
D
= 100 µA
GS
= 10
V
,
I
D
= 3.1 A
=
20 V
10
µA
V
GS(th)
R
DS(on)
Gate threshold voltage
3
3.75
1.3
4.5
1.5
V
Static drain-source on
resistance
V
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
V
DS
= 15v, I
D
= 3.1 A
Forward transconductance
5.2
S
g
fs
C
iss
C
oss
C
rss
Input capacitance
1320
143
27
pF
pF
pF
V
DS
= 25
V
, f = 1
M
Hz,
V
GS
= 0
Output capacitance
Reverse transfer capacitance
(2)
Equivalent output
capacitance
C
oss eq.
V
DS
=0
V
,
V
DS
= 0V to 640V
58
pF
t
d(on)
t
r
t
r(off)
t
r
T
u
rn-on delay time
Rise time
17
30
48
28
ns
ns
ns
ns
V
DD
= 400
V
,
I
D
= 3.1 A,
R
G
= 4.7
Ω
,
V
GS
= 10 V
T
u
rn-off delay time
Fall time
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
46
8.5
25
nC
nC
nC
V
DD
= 640
V
,
I
D
= 6.2 A,
V
GS
= 10 V
t
r(Voff)
V
DD
= 640
V
,
I
D
= 6.2 A,
R
G
= 4.7
Ω
,
V
GS
= 10 V
Off-voltage rise time
Fall time
9
9
ns
ns
ns
t
r
Cross-over time
18
t
c
1. Pulsed:
pulse duration=300µs, duty cycle 1.5%
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
4/15
STP8NK80Z – STP8NK80ZFP – STW8NK80Z
Electrical characteristics
Min. Typ. Max.
Unit
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
I
SD
Source-drain current
6.2
A
A
(1)
Source-drain current (pulsed)
24.8
I
SDM
(2)
I
SD
= 6.2 A, V
GS
= 0
Forward on voltage
1.6
V
V
SD
t
rr
I
SD
= 6.2 A, di/dt = 100 A/µs
V
DD
= 50
V
,
T
j = 150°C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
460
2990
13
ns
Q
rr
nC
A
I
RRM
1. Pulsed:
pulse duration=300µs, duty cycle 1.5%
2. Pulse
width limited by safe operating area
Table 8.
Symbol
Gate-source zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
BV
GSO
Gate-source breakdown voltage
Igs= 1mA
(Open Drain)
30
V
1. The
built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
5/15
Electrical characteristics
STP8NK80Z – STP8NK80ZFP – STW8NK80Z
Figure 3.
Thermal impedance for TO-220
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
6/15
STP8NK80Z – STP8NK80ZFP – STW8NK80Z
Figure 8.
Output characteristics
Electrical characteristics
Figure 9.
Transfer characteristics
Figure 10.
Transconductance
Figure 11.
Static drain-source on resistance
Figure 12.
Gate charge vs gate-source voltage
Figure 13.
Capacitance variations
7/15
Electrical characteristics
STP8NK80Z – STP8NK80ZFP – STW8NK80Z
Figure 14.
Normalized gate threshold voltage
Figure 15.
Normalized on resistance vs
vs temperature
temperature
Figure 16.
Source-drain diode forward
characteristic
Figure 17.
Normalized B
vs temperature
VDSS
Figure 18.
Maximum avalanche energy vs
temperature
8/15
STP8NK80Z – STP8NK80ZFP – STW8NK80Z
Test circuit
3
Test circuit
Figure 19.
Unclamped inductive load test
circuit
Figure 20.
Unclamped inductive waveform
Figure 21.
Switching times test circuit for
resistive load
Figure 22.
Gate charge test circuit
Figure 23.
Test circuit for inductive load
switching and diode recovery times
9/15
Package mechanical data
STP8NK80Z – STP8NK80ZFP – STW8NK80Z
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
10/15
STP8NK80Z – STP8NK80ZFP – STW8NK80Z
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.4
9
15.25
4.60
0.
88
1.70
0.70
15.75
0.17
3
0.024
0.044
0.01
9
0.6
0.1
8
1
0.0
3
4
0.066
0.027
0.62
b
1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.
3
2
6.60
2.72
14
0.
393
0.0
9
4
0.1
9
4
0.04
8
0.244
0.0
9
4
0.511
0.1
3
7
0.40
9
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.
9
5
1.2
3
6.20
2.40
1
3
e1
F
H1
J1
L
L1
L20
L
3
0
∅
P
Q
3
.50
3
.
93
16.40
0.645
2
8
.
9
0
1.1
3
7
3
.75
3
.
8
5
2.
9
5
0.147
0.104
0.151
0.116
2.65
11/15
Package mechanical data
STP8NK80Z – STP8NK80ZFP – STW8NK80Z
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1
2 3
L5
L2
L4
12/15
STP8NK80Z – STP8NK80ZFP – STW8NK80Z
Package mechanical data
TO-247 MECHANICAL DATA
mm.
TYP
inch
DIM.
MIN.
4.85
2.20
1.0
MAX.
5.15
MIN.
0.19
TYP.
MAX.
0.20
A
A1
b
2.60
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.102
0.055
0.094
0.134
0.03
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
0.793
0.620
E
e
5.45
18.50
5.50
0.214
0.728
0.216
L
14.20
3.70
14.80
4.30
0.560
0.14
0.582
0.17
L1
L2
øP
øR
S
3.55
4.50
3.65
5.50
0.140
0.177
0.143
0.216
13/15
STP8NK80Z – STP8NK80ZFP – STW8NK80Z
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15/15
