STMicroelectronics-STP9NK60ZFP
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STB9NK60Z, STP9NK60Z, STP9NK60ZFP
N-channel 600
V
,
0
.85
Ω
typ., 7 A Zener-protected SuperMESH™
Power MOSFET in D²
P
A
K, TO-220 and TO-220FP packages
Datasheet
−
production data
Features
TAB
TAB
Order codes
V
DS
R
DS(on) max
I
D
P
TOT
3
STB9NK60ZT4
STP9NK60Z
3
1
2
125 W
30 W
600
0.95
Ω
V
1
7 A
D
2
P
A
K
TO-220
STP9NK60ZFP
■
Extremely high dv/dt capability
■
Improved ESD capability
■
100% avalanche tested
3
2
1
■
Gate charge minimized
TO-220FP
■
Very low intrinsic capacitances
Applications
Figure 1.
Internal schematic diagram
, TAB
■
Switching applications
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics’ SuperMESH™ technolog
y
,
achieved through optimization of ST’s well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
S
C15010
Table 1.
Device summary
Order codes
Marking
Package
Packaging
D
2
P
A
K
TO-220
STB9NK60ZT4
STP9NK60Z
B9NK60Z
P9NK60Z
T
u
be
STP9NK60ZFP
P9NK60ZFP
TO-220FP
January 2013
Doc ID 8799 Rev 3
1/19
This is information on a product in full production.
19
Contents
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
Doc ID 8799 Rev 3
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
Electrical ratings
1
Electrical ratings
T
a
ble 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
D²
P
A
K, TO-220
TO-220FP
V
DS
V
GS
I
D
Drain-source voltage
600
V
V
Gate-source voltage
30
7
(1)
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
=100°C
7
A
A
4.4
(1)
I
D
4.4
(2)
28
(1)
30
I
DM
Drain current (pulsed)
T
o
tal dissipation at T
C
= 25°C
Derating Factor
28
125
1
A
W
P
TOT
0.24
W/°C
Gate-source human body model (R=1,5 k
Ω
,
C=100 pF)
ESD
4
kV
dv/dt
(3)
Peak diode recovery voltage slope
4.5
V/ns
Insulation withstand voltage (RMS) from all
three leads to external heat sink (t = 1 s,T
C
=
25 °C)
V
ISO
—
2500
V
T
J
Operating junction temperature
Storage temperature
-55 to 150
°C
T
stg
1. Limited
by maximum junction temperature
2. Pulse
width limited by safe operating area
3.
I
≤
7A, di/dt
≤
200A/µs,V
≤
V
, T
≤
T
SD
DD
(BR)DSS j
JMAX
T
a
ble 3.
Symbol
Thermal data
Value
Parameter
Unit
D²
P
A
K TO-220
TO-220FP
4.2
R
thj-case
R
thj-amb
R
thj-pcb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
(1)
1
°C/W
°C/W
°C/W
62.5
30
1. When
mounted on minimum footprint
Doc ID 8799 Rev 3
3/19
Electrical ratings
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
T
a
ble 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
I
AR
Avalanche current, repetitive or not-repetitive
(1)
Single pulse avalanche energy
(2)
7
A
E
AS
235
mJ
1. Pulse
width limited by T
j Max
2. Starting
T =25 °C, I
=I ,
V =50
V
j
D
AR
DD
4/19
Doc ID 8799 Rev 3
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
Electrical characteristics
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
I
D
= 1 mA
DS
= 600
V
,
Min.
Typ. Max. Unit
Drain-source breakdown
voltage V
GS
= 0
V
(BR)DSS
600
V
V
1
µA
µA
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
V
DS
= 600
V
,
T
C
= 125 °C
50
Gate body leakage current
(V
DS
= 0)
I
GSS
V
GS
= 20
V
10
µA
V
GS(th)
R
DS(on)
V
DS
= V
GS
, I
D
= 100 µA
V
GS
= 10
V
,
I
D
= 3.5 A
Gate threshold voltage
3
3.75
0.85
4.5
V
Static drain-source on-
resistance
0.95
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
V
DS
=15
V
,
I
D
= 3.5 A
Forward transconductance
–
5.3
S
g
fs
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
1110
135
30
pF
pF
pF
V
DS
=25
V
,
f
=1 MHz, V
GS
=0
V
GS
=0, V
DS
=0 V to 480 V
–
Reverse transfer
capacitance
(2)
Equivalent output
capacitance
C
oss eq
–
–
72
pF
Q
g
Q
gs
Q
gd
V
DD
=480
V
,
I
D
= 7 A
T
o
tal gate charge
Gate-source charge
Gate-drain charge
38
7
53
nC
nC
nC
V
GS
=10 V
21
1. Pulsed:
pulse duration=300µs, duty cycle 1.5%
2. is
defined as a constant equivalent capacitance giving the same charging time as C
C
when V
DS
oss eq.
oss
increases from 0 to 80% V
DSS
Doc ID 8799 Rev 3
5/19
Electrical characteristics
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
Table 7.
Symbol
Switching times
Parameter
Test conditions
Min. Typ. Max.
Unit
V
DD
=300
V
,
I
D
=3.5 A,
t
d(on)
t
r
T
u
rn-on delay time
Rise time
19
17
ns
ns
R
G
=4.7
Ω
,
V
GS
=10 V
–
–
–
–
V
DD
=300
V
,
I
D
=3.5 A,
t
d(off)
t
f
T
u
rn-off delay time
Fall time
43
15
ns
ns
R
G
=4.7
Ω
,
V
GS
=10 V
Table 8.
Symbol
Gate-source zener diode
Parameter
Test conditions
Min. Typ. Max.
Unit
30
V
(BR)GSO
I
GS
= 1
mA, I
D
=0
Gate-source breakdown voltage
–
–
V
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrit
y
.
The integrated Zener diodes thus eliminate the need for external components.
T
a
ble 9.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I
SD
Source-drain current
–
–
–
7
A
A
V
(1)
Source-drain current (pulsed)
Forward on voltage
28
1.6
I
SDM
(2)
I
SD
=7 A, V
GS
=0
V
SD
t
rr
I
SD
=7 A,
Reverse recovery time
Reverse recovery charge
Reverse recovery current
480
3.5
ns
µC
A
Q
rr
di/dt = 100 A/µs,
–
V
DD
=30
V
,
T
j=150 °C
14.5
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration=300 µs, duty cycle 1.5%
6/19
Doc ID 8799 Rev 3
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for D²
P
A
K and
Figure 3.
Thermal impedance for D²PAK and
TO-220
TO-220
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Output characterisics
Figure 7.
Transfer characteristics
Doc ID 8799 Rev 3
7/19
Electrical characteristics
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
Figure 9.
Static drain-source on-resistance
Figure 8.
Transconductance
Figure 10.
Gate charge vs gate-source voltage
Figure 11.
Capacitance variations
Figure 12.
Normalized gate threshold voltage
Figure 13.
Normalized on-resistance vs
vs temperature
temperature
8/19
Doc ID 8799 Rev 3
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
Electrical characteristics
Figure 14.
Source-drain diode forward
characteristics
Figure 15.
Normalized B
VDSS
vs temperature
Figure 16.
Maximum avalanche energy vs
temperature
Doc ID 8799 Rev 3
9/19
Test circuits
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
Figure 18.
Gate charge test circuit
3
Test circuits
Figure 17.
Switching times test circuit for
resistive load
Figure 19.
Test circuit for inductive load
switching and diode recovery times
Figure 20.
Unclamped Inductive load test
circuit
Figure 21.
Unclamped inductive waveform
Figure 22.
Switching time waveform
10/19
Doc ID 8799 Rev 3
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
ECO
P
A
CK
®
is an ST trademark.
Doc ID 8799 Rev 3
11/19
Package mechanical data
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
Table 10.
D²
P
A
K (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
12/19
Doc ID 8799 Rev 3
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
Figure 23.
D²
P
A
K (TO-263) drawing
Package mechanical data
0079457_T
Figure 24.
D²
P
A
K footprint
(a)
16.90
12.20
5.0
8
1.60
3
.50
9.75
Footprint
a. All
dimension are in millimeters
Doc ID 8799 Rev 3
13/19
Package mechanical data
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
T
a
ble 11.
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅
P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
14/19
Doc ID 8799 Rev 3
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
Figure 25.
TO-220 type A drawing
Package mechanical data
00159
88
_typeA_Rev_
S
Doc ID 8799 Rev 3
15/19
Package mechanical data
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
mm
T
a
ble 12.
TO-220FP mechanical data
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
16/19
Doc ID 8799 Rev 3
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
Figure 26.
TO-220FP drawing
Package mechanical data
7012510_Rev_K_B
Doc ID 8799 Rev 3
17/19
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
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Doc ID 8799 Rev 3
19/19
