STMicroelectronics-STQ2LN60K3-AP
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STQ2LN60K3-AP
N-
channel 600 V, 4 Ω typ., 0.6 A MDmesh™ K3
Power MOSFET in a TO-92 package
Datasheet – production data
Features
R
DS(on)
max
P
TOT
Order code
V
DS
I
D
2.5 W
STQ2LN60K3-AP
600 V
4.5 Ω
0.6 A
3
100% avalanche tested
Extremely high dv/dt capability
Very low intrinsic capacitance
Improved diode reverse recovery
characteristics
2
1
TO-92 ammopack
Zener-protected
Figure 1: Internal schematic diagram
Applications
D(2)
Switching applications
Description
This MDmesh™ K3 Power MOSFET is the result
of improvements applied to STMicroelectronics’
MDmesh™ technology, combined with a new
optimized vertical structure. This device boasts
an extremely low on-resistance, superior dynamic
performance and high avalanche capability,
rendering it suitable for the most demanding
applications.
G(1)
S(3)
AM15572v1_no_tab
Table 1: Device summary
Order code
Marking
Package
Packaging
STQ2LN60K3-AP
2LN60K3
TO-92
Ammopack
February 2017
DocID023499 Rev 3
1/13
This is information on a product in full production.
Contents
STQ2LN60K3-AP
Contents
2/13
DocID023499 Rev 3
STQ2LN60K3-AP
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
V
DS
V
GS
I
D
Parameter
Value
600
±30
0.6
Unit
V
Drain-source voltage
Gate-source voltage
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
A
I
D
0.38
2.4
A
I
DM
A
P
TOT
T
stg
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
Storage temperature range
2.5
W
V/ns
12
-55 to 150
°C
T
j
Operating junction temperature range
Notes:
(1)
Pulse width limited by safe operating area.
(2)
I
≤ 2 A, di/dt ≤ 400 A/µs, V
DS(peak)
< V
(BR)DSS
SD
Table 3: Thermal data
Parameter
Symbol
R
thj-case
R
thj-amb
Value
50
Unit
°C/W
°C/W
Thermal resistance junction-case
Thermal resistance junction-ambient
120
Table 4: Avalanche characteristics
Parameter
Single pulse avalanche current
(pulse width limited by T
jmax
Symbol
Value
Unit
I
AS
2
A
)
Single pulse avalanche energy
E
AS
80
mJ
(starting T
J
=25 °C, I
D
=I
AR
, V
DD
=50 V)
DocID023499 Rev 3
3/13
Electrical characteristics
STQ2LN60K3-AP
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 5: On/off states
Symbol
Parameter
Drain-source
Test conditions
I
D
= 1 mA, V
GS
= 0 V
V
GS
= 0 V, V
DS
= 600 V
Min. Typ. Max. Unit
V
(BR)DSS
600
V
breakdown voltage
1
Zero gate voltage drain
current
I
DSS
µA
V
GS
= 0 V, V
DS
= 600 V,
50
I
GSS
Gate-body leakage current
Gate threshold voltage
V
DS
= 0 V, V
GS
= ±20 V
V
DS
= V
GS
, I
D
= 50 µA
±10
4.5
µA
V
V
GS(th)
3
3.75
4
Static drain-source on-
resistance
R
DS(on)
V
GS
= 10 V, I
D
= 1 A
4.5
Ω
Notes:
(1)
Defined by design, not subject to production test.
Table 6: Dynamic
Test conditions
Symbol
C
iss
Parameter
Input capacitance
Output capacitance
Min. Typ. Max. Unit
–
–
235
22
–
–
pF
pF
V
DS
= 50 V, f = 1 MHz,
V
GS
= 0 V
C
oss
Reverse transfer
capacitance
C
rss
–
–
–
3.5
14
10
–
–
pF
pF
pF
Eq. capacitance time
related
V
GS
= 0 V, V
DS
= 0 to 480 V
V
DD
= 480 V, I
D
= 1 A,
Eq. capacitance energy
related
Q
g
Total gate charge
–
–
12
–
–
nC
nC
V
GS
= 0 to 10 V
Q
gs
Gate-source charge
1.8
Q
gd
R
G
Gate-drain charge
–
–
7.7
7
–
–
nC
Gate input resistance
f=1 MHz, I
D
=0 A
Ω
Notes:
(1)
C
oss eq.
time related is defined as a constant equivalent capacitance giving the same charging time as C
oss
when
V
DS
increases from 0 to 80% V
DSS
(2)
C
oss eq.
energy related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
DS
increases from 0 to 80% V
DSS
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STQ2LN60K3-AP
Electrical characteristics
Min. Typ. Max. Unit
Table 7: Switching times
Test conditions
Symbol
t
d(on)
t
r
Parameter
Turn-on delay time
Rise time
V
DD
= 300 V, I
D
= 1 A,
–
–
–
10
8.5
–
–
–
ns
ns
ns
R
G
= 4.7 Ω, V
GS
= 10 V
t
d(off)
Turn-off delay time
23.5
t
f
Fall time
–
21
–
ns
Table 8: Source-drain diode
Test conditions
Symbol
Parameter
Min. Typ. Max. Unit
Source-drain current
–
–
0.6
2.4
1.5
A
Source-drain current
(pulsed)
A
Forward on voltage
I
SD
= 2 A, V
GS
= 0 V
–
–
–
V
t
rr
Reverse recovery time
Reverse recovery charge
I
SD
= 2 A, di/dt = 100 A/µs
200
800
ns
V
DD
= 60 V
Q
rr
nC
I
RRM
Reverse recovery current
–
8
A
t
rr
Reverse recovery time
I
SD
= 2 A, di/dt = 100 A/µs
–
–
230
950
ns
V
DD
= 60 V, T
j
= 150 °C
Q
rr
Reverse recovery charge
nC
I
RRM
Reverse recovery current
–
8.5
A
Notes:
(1)
Pulse width limited by safe operating area.
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
30
V
(BR)GSO
Gate-source breakdown voltage
I
GS
= ±1 mA, I
D
= 0 A
–
–
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection,thus eliminating the need for additional external componentry.
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Electrical characteristics
STQ2LN60K3-AP
2.1
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
AM13054v1
AM13055v1
I
D
I
D
(A)
(A)
V
GS
=10V
V
DS
=15V
2.5
2.0
2.0
1.5
1.0
6V
1.5
1.0
0.5
0
0.5
0
5V
2
8
V
GS
(V)
8
V
DS
(V)
0
4
6
0
2
4
6
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
AM13057v1
AM13056v1
V
GS
(V)
R
DS(on)
V
DS
(V)
(
W
)
V
DD
=480V
I
D
=2A
V
GS
=10V
12
10
8
4.2
500
400
300
200
100
V
DS
4.0
3.8
3.6
3.4
6
4
2
0
3.2
3.0
0
1.0 1.2
0.4 0.6
0.8
0.2
I
D
(A)
10
0
Q
g
(nC)
0
5
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STQ2LN60K3-AP
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Source-drain diode forward characteristics
AM13058v1
AM13063v1
C
(pF)
V
SD
(V)
T
J
=-50°C
0.9
T
J
=25°C
0.8
Ciss
0.7
100
T
J
=150°C
0.6
0.5
0.4
0.3
0.2
10
Coss
Crss
0.1
0
1
0.1
100
0
1
10
V
DS
(V)
1
2
3
4
5
I
SD
(A)
Figure 10: Normalized gate threshold voltage vs
temperature
Figure 11: Normalized on-resistance vs temperature
AM13060v1
AM13061v1
V
GS(th)
(norm)
R
DS(on)
(norm)
I
D
=1A
I
D
=50µA
V
GS
=10V
2.5
1.10
1.00
0.90
2.0
1.5
1.0
0.80
0.70
0.5
0
-75
-75
-25
25
75
T
J
(°C)
-25
25
75
T
J
(°C)
125
125
Figure 12: Normalized V
(BR)DSS
vs temperature
Figure 13: Output capacitance stored energy
AM13059v1
AM13062v1
E
oss
(µJ)
V
(BR)DSS
(norm)
I
D
=1mA
1.10
1.05
1.5
1
1.00
0.5
0
0.95
0.90
200
400 500
600 V
DS
(V)
0
100
300
-75
-25
25
75
T
J
(°C)
125
DocID023499 Rev 3
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Electrical characteristics
STQ2LN60K3-AP
Figure 14: Maximum avalanche energy vs temperature
AM13064v1
E
AS
(mJ)
90
I
D
=2 A
V
DD
=50 V
80
70
60
50
40
30
20
10
0
0
20
40
60 80
100
120
140
T
J
(°C)
8/13
DocID023499 Rev 3
STQ2LN60K3-AP
Test circuits
3
Test circuits
Figure 15: Test circuit for resistive load
switching times
Figure 16: Test circuit for gate charge
behavior
Figure 17: Test circuit for inductive load
switching and diode recovery times
Figure 18: Unclamped inductive load test
circuit
Figure 19: Unclamped inductive waveform
Figure 20: Switching time waveform
DocID023499 Rev 3
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Package information
STQ2LN60K3-AP
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
4.1
TO-92 ammopack package information
Figure 21: TO-92 ammopack package outline
T
A1
T2
T1
H1
delta H
W2
H
H3
H0
d
L
l1
W
W0
W1
F1 F2
F3
D0
t
P2
P0
0050910_Rev_22
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DocID023499 Rev 3
STQ2LN60K3-AP
Package information
Table 10: TO-92 ammopak mechanical data
mm
Dim.
Min.
Typ.
Max.
4.80
3.80
1.60
2.30
0.48
12.90
7.05
2.94
5.48
2.00
19.00
6.50
9.25
0.50
21.00
18.20
27.00
2.00
4.20
0.90
11.00
A1
T
T1
T2
d
0.45
12.50
5.65
2.40
4.98
-2.00
17.50
5.50
8.50
0.47
12.70
6.35
2.50
5.08
P0
P2
F1, F2
F3
delta H
W
18.00
6.00
9.00
W0
W1
W2
H
18.50
16.00
25.00
1.00
H0
H1
H3
D0
t
15.50
0.50
3.80
4.00
L
I1
3.00
delta P
-1.00
1.00
DocID023499 Rev 3
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Revision history
STQ2LN60K3-AP
5
Revision history
Table 11: Document revision history
Changes
Date
Revision
19-Jul-2012
1
First release.
Modified title, features and description on cover page
Modified
Table 2: “Absolute maximum ratings”, Table 5: “On/off states”
and
Table 9: “Gate-source Zener diode”
24-Jan-2017
01-Feb-2017
2
3
Modified:
Figure 11: “Normalized on-resistance vs temperature”
Updated
Section 4.1: “TO-92 ammopack package information”
Minor text changes
Minor text changes.
12/13
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STQ2LN60K3-AP
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–
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–
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DocID023499 Rev 3
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