STMicroelectronics-STR2N2VH5
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STR2N2VH5
N-channel 20
V
,
0
.025
Ω
typ., 2.3 A STripFET™ H5
Power MOSFET in a SOT-23 package
Datasheet — production data
Features
Order code
V
DS
R
DS(on)
max
I
D
P
TOT
STR2N2VH5 20
V 0.03
Ω
(V
GS
=4.5 V) 2.3 A 0.35 W
3
•
Low on-resistance R
DS(on)
•
High avalanche ruggedness
•
Low gate drive power loss
2
1
SOT-23
Applications
•
Switching applications
Description
Figure 1.
Internal schematic diagram
This device is an N-channel Power MOSFET
developed using STMicroelectronics’ STripFET™
H5 technology. The device has been optimized to
achieve very low on-state resistance, contributing
to a FoM that is among the best in its class.
Table 1. Device summary
Order code
Marking
STD1
Packages
Packaging
STR2N2VH5
SOT-23
T
a
pe and reel
July 2014
DocID023799 Rev 4
1/13
This is information on a product in full production.
Contents
STR2N2VH5
Contents
Electrical ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
DocID023799 Rev 4
STR2N2VH5
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
DS
V
GS
Drain-source voltage
Gate-source voltage
20
± 8
2.3
1.4
9.2
0.35
V
V
(1)
I
D
Drain current (continuous) at T
pcb
= 25 °C
Drain current (continuous) at T
pcb
= 100 °C
Drain current (pulsed)
A
(1)
I
D
A
(1)(2)
I
DM
A
(1)
P
TOT
T
o
tal dissipation at T
pcb
= 25 °C
Storage temperature
W
°C
°C
T
stg
T
j
– 55 to 150
Max. operating junction temperature
1. This
value is rated according to R
thj-pcb
2. Pulse
width is limited by safe operating area
Table 3. Thermal data
Symbol
Parameter
Value
Unit
(1)
R
thj-pcb
Thermal resistance junction-pcb max
357
°C/W
1. When
mounted on 1 inch² FR-4, 2 Oz Cu, t< 10 sec.
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13
Electrical characteristics
STR2N2VH5
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4. On /off states
Test conditions
Symbol
Parameter
Drain-source
Min.
Typ.
Max. Unit
V
(BR)DSS
V
GS
= 0, I
D
= 1 mA
20
V
breakdown voltage
V
GS
= 0, V
DS
= 20 V
GS
= 0, V
DS
= 20 V,
1
µA
µA
Zero gate voltage
drain current
I
DSS
V
10
T
C
=125 °C
Gate-body leakage
current
I
GSS
V
DS
= 0, V
GS
= ± 8 V
± 100
nA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
0.7
V
GS
= 4.5
V
, I
D
= 2 A
0.025
0.031
0.03
0.04
Ω
Ω
Static drain-source
on-resistance
R
DS(on)
V
GS
= 2.5
V
, I
D
= 2 A
Table 5. Dynamic
Test conditions
Symbol
Parameter
Min.
Typ.
Max. Unit
C
iss
Input capacitance
Output capacitance
–
–
367
92
–
–
pF
pF
C
oss
V
GS
= 0, V
DS
= 16
V
, f = 1 MHz
Reverse transfer
capacitance
C
rss
–
16
–
pF
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
–
–
–
4.6
0.9
1
–
–
–
nC
nC
nC
V
DD
= 16 V, I
D
= 2 A,
GS
= 4.5 V
V
Table 6. Switching times
Test conditions
Symbol
Parameter
Min.
Typ.
Max. Unit
t
d(on)
t
r (V)
t
d (off)
t
f
Voltage delay time
Voltage rise time
Current fall time
Crossing time
–
–
–
–
4.8
14.4
17
–
–
–
–
ns
ns
ns
ns
V
DD
= 16
V
,
I
D
= 2 A,
R
G
= 4.7
Ω
,
V
GS
= 4.5 V
4
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STR2N2VH5
Electrical characteristics
Min. Typ. Max.
Unit
Table 7. Source drain diode
Test conditions
Symbol
Parameter
I
SD
Source-drain current
–
–
–
–
–
–
2.3
9.2
1.1
A
A
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
(2)
V
SD
V
GS
= 0, I
SD
= 2 A
SD
= 2 A, di/dt = 100 A/µs
V
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
10
24
ns
nC
A
I
Q
rr
V
DD
= 16
V
, T
j
= 150 °C
I
RRM
4.8
1. Pulse
width limited by safe operating area.
2. Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
DocID023799 Rev 4
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13
Electrical characteristics
STR2N2VH5
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM18127v1
AM18126v1
I
D
(A)
K
δ
=0.5
0.2
0.1
10
-1
10
100µs
1ms
0.05
0.02
pcb
0.01
10
-2
10ms
1
Single pulse
Tj=150°C
Tpcb=25°C
Single pulse
0.1
0.1
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
p
(s)
V
DS
(V)
1
10
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM18128v1
AM18129v1
I
D
(A)
I
D
(A)
20
16
V
DS
=4V
V
GS
=2.5, 3.5, 4.5, 5.5, 6.5 V
20
1.5V
16
12
12
8
4
0
8
4
0
0.5V
0.2
2
3
V
DS
(V)
0.8
1
V
GS
(V)
0
1
4
0
0.4 0.6
1.2
Figure 6. Gate charge vs gate-source voltage
Figure 7. Static drain-source on-resistance
AM18130v1
AM18132v1
V
GS
(V)
R
DS(on)
(m
Ω
)
V
DD
=10V
I
D
=2A
V
GS
=4.5V
26
6
25.6
25.2
24.8
4
2
0
24.4
24
2
2.5
3
3.5
1.5
Q
g
(nC)
I
D
(A)
0
2
4
1
6
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STR2N2VH5
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs
temperature
AM18133v1
AM18134v1
V
GS(th)
C
(pF)
(norm)
I
D
=250µA
1.2
Ciss
1
0.8
0.6
100
10
Coss
0.4
0.2
0
Crss
0
12
16
-55
-30 -5
20 45
70
4
8
V
DS
(V)
T
J
(°C)
95
120
Figure 10. Normalized on-resistance vs
temperature
Figure 11. Normalized V
(BR)DSS
vs temperature
AM18135v1
AM18136v1
V
(BR)DSS
R
DS(on)
(norm)
(norm)
I
V
D
=2A
I
D
=1mA
GS
=10V
1.6
1.4
1.2
1
1.1
1.05
0.8
0.6
0.4
1
0.95
0.9
0.2
0
-55
-55
-30 -5
20 45
70
-30
-5
20 45
70
120
T
J
(°C)
T
J
(°C)
95
120
95
Figure 12. Source-drain diode forward
characteristics
AM18137v1
SD
(V)
0.9
V
T
J
=-55°C
T
J
=25°C
0.8
0.7
0.6
0.5
T
J
=150°C
2.1
0.5
0.9
1.3
1.7
I
SD
(A)
DocID023799 Rev 4
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13
Test circuits
STR2N2VH5
3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
μ
F
3.3
μ
F
R
L
I
G
=CONST
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.T.
V
D
R
G
V
GS
2200
μ
F
D.U.T.
V
G
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
L
A
A
A
B
D
S
FAST
DIODE
L=100
μ
H
V
D
G
2200
μ
F
D.U.T.
B
3.3
μ
F
V
DD
3.3
μ
F
1000
μ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.T.
P
w
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
t
on
t
off
td
off
V
(BR)DSS
t
r
t
f
td
on
V
D
90%
10%
90%
I
DM
10%
V
GS
V
DS
I
D
0
0
V
DD
V
DD
90%
10%
AM01472v1
AM01473v1
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STR2N2VH5
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
ECOPACK
®
is an ST trademark.
DocID023799 Rev 4
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13
Package mechanical data
STR2N2VH5
Figure 19. SOT-23 mechanical drawing
0053390_I
Table 8. SOT-23 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
B
0.89
0
1.40
0.10
0.51
0.18
3.04
1.05
2.10
1.75
3.00
0.30
0.085
2.75
0.85
1.70
1.20
2.10
C
D
e
e1
E
H
L
0.60
S
0.35
0.25
0°
0.65
0.55
8°
L1
a
10/13
DocID023799 Rev 4
STR2N2VH5
Package mechanical data
Figure 20. SOT-23 recommended footprint
(a)
0.48
0.95
0.99
2.89
0.97
SOT-23 footp_I
a. Dimensions
are in mm.
DocID023799 Rev 4
11/13
13
Revision history
STR2N2VH5
5
Revision history
Table 9. Document revision history
Changes
Date
Revision
19-Oct-2012
14-Jan-2013
1
2
First release.
Modified: R
DS(on)
values
– The part number STT5N2VH5 has been moved to a separate
datasheet
– Minor text changes
19-Mar-2014
25-Jul-2014
3
4
– Modified: title, description and features
– Minor text changes
12/13
DocID023799 Rev 4
STR2N2VH5
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.
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