STMicroelectronics-STS1NK60Z
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STS1NK60Z
N-CHANNEL 600V – 13
Ω
– 0.25A – SO-8
Zener-Protected SuperMESH™ Power MOSFET
TYPE
V
DSS
R
I
D
Pw
DS(on)
STS1NK60Z
600 V
< 15
Ω
0.25 A
2 W
TYPICAL R
(on) = 13
Ω
DS
EXTREMELY HIGH dv/dt CAPABILITY
ESD IMPROVED CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
SO-8
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFE
T
s
i
n-
cluding revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
AC ADAPTORS AND BATTERY CHARGERS
SWITH MODE POWER SUPPLIES (SMPS)
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
SO-8
P
A
CKAGING
STS1NK60Z
S1NK60Z
T
A
PE & REEL
June 2003
1/8
STS1NK60Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
600
600
± 30
0.25
0.16
1
Unit
V
V
DS
Drain-source Voltage (V
= 0)
GS
V
Drain-gate Voltage (R
= 20 k
Ω
)
V
DGR
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuous) at T
= 25°C
A
D
C
I
Drain Current (continuous) at T
= 100°C
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T
= 25°C
2
W
C
Derating Factor
0.016
800
4.5
W/°C
V
V
Gate source ESD(HBM-C=100p
F
,
R
=1.5K
Ω)
Peak Diode Recovery voltage slope
ESD(G-S)
dv/dt (1)
V/ns
T
T
stg
-55 to 150
-55 to 150
Operating Junction
T
e
mperature
Storage
T
e
mperature
°C
°C
j
( )
Pulse width limited by safe operating area
(1) I
≤
0.3A, di/dt
≤
200A/µs, V
≤
V
, T
≤
T
j JMAX.
SD
DD
(BR)DSS
THERMAL DATA
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
GATE-SOURCE ZENER DIODE
Symbol
BV
Parameter
Test Conditions
Min.
T
y
p.
Max.
Unit
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
30
V
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/8
STS1NK60Z
ELECTRICAL CHARACTERISTICS
(T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
T
y
p.
Max.
Unit
V
I
= 1 mA, V
= 0
600
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
= Max Rating
= Max Rating, T
= 125 °C
1
50
µA
µA
DSS
DS
DS
Drain Current (V
= 0)
GS
C
I
Gate-body Leakage
V
= ± 20V
±10
µA
GSS
GS
Current (V
= 0)
DS
V
V
V
= V
, I
= 50 µA
Gate Threshold Voltage
3
3.75
13
4.5
15
V
GS(th)
DS
GS
GS
D
R
Static Drain-source On
Resistance
= 10
V
, I
=
0
.4 A
Ω
DS(on)
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
T
y
p.
Max.
Unit
g
(1)
Forward Transconductance
V
V
= V
I =
0.4 A
0.5
S
fs
DS
, D
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, V
= 0
94
17.6
2.8
pF
pF
pF
iss
DS
GS
oss
rss
C
(3) Equivalent
Output
Capacitance
= 0V, V
= 0V to 480V
11
pF
oss eq.
GS
DS
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
T
y
p.
Max.
Unit
t
Turn-on Delay Time
Rise Time
V
R
= 300
V
, I
= 0.4 A
= 4.7
Ω
V =
10 V
GS
5.5
5
ns
ns
d(on)
DD
D
t
r
G
(Resistive Load see, Figure 3)
Q
V
V
= 480
V
, I
= 0.8 A,
= 10V
6.9
nC
nC
nC
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
4.9
1
2.7
g
DD
GS
D
Q
gs
gd
Q
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
T
y
p.
Max.
Unit
t
Turn-off Delay Time
Fall Time
V
= 300
V
, I
=
0
.4A
13
28
ns
ns
d(off)
DD
D
t
f
R =
4.7
Ω
V =
10 V
G GS
(Resistive Load see, Figure 3)
t
V
R
=480V, I
= 0.8A,
ns
ns
ns
Off-voltage Rise Time
Fall Time
Cross-over Time
28
12.5
48
r(Voff)
DD
D
t
f
= 4.7
Ω,
V =
10V
G
GS
t
c
(Inductive Load see, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
T
y
p.
Max.
Unit
I
0.25
1
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 0.25A, V
= 0
Forward On Voltage
1.6
V
SD
SD
SD
GS
t
= 0.8 A, di/dt = 100A/µs
= 20
V
, T
=
1
50°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
140
224
3.2
ns
nC
A
rr
Q
V
DD
rr
RRM
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed:
Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse
width limited by safe operating area.
3. C
V
is defined as a constant equivalent capacitance giving the same charging time as C
when V
increases from 0 to 80%
oss DS
oss eq.
.
DSS
3/8
STS1NK60Z
Safe Operating Area
Thermal Impedance
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/8
STS1NK60Z
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
5/8
STS1NK60Z
Fig. 1:
Unclamped Inductive Load Test Circuit
Fig. 2:
Unclamped Inductive Waveform
Fig. 3:
Switching Times Test Circuit For
Fig. 4:
Gate Charge test Circuit
Resistive Load
Fig. 5:
Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STS1NK60Z
SO-8 MECHANICAL
DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
0016023
7/8
STS1NK60Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
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