STMicroelectronics-STS5N15F4
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STS5N15F4
N-channel 150
V
,
0
.057
Ω
, 5 A, SO-8
S
T
r
ipFET™ DeepG
A
T
E™ Power MOSFET
Features
R
DS(on)
max
Type
V
DSS
I
D
STS5N15F4
150 V
< 0.063
Ω
5 A
■
N-channel enhancement mode
■
100% avalanched rated
■
Low gate charge
SO-8
■
Very low on-resistance
Application
Figure 1.
Internal schematic diagram
■
Switching applications
Description
This S
T
r
ipFET™ DeepG
A
T
E™ Power MOSFET
technology is among the latest improvements,
which have been especially tailored to minimize
on-state resistance, with a new gate structure,
providing superior switching performances.
Table 1.
Order code
STS5N15F4
Device summary
Marking
Package
SO-8
Packaging
5U15-
T
a
pe and reel
August 2009
Doc ID 16083 Rev 2
1/11
11
Electrical ratings
STS5N15F4
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
DS
V
GS
I
D
Drain-source voltage (V
GS
= 0)
Gate-source voltage
150
20
5
V
V
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
=100 °C
Drain current (pulsed)
A
I
D
3
A
(1)
I
DM
20
2.5
A
P
TOT
T
stg
T
j
T
o
tal dissipation at T
C
= 25 °C
Storage temperature
W
-55 to 150
°C
Operating junction temperature
1. Pulse
width limited by safe operating area
Table 3.
Symbol
Thermal data
Parameter
Thermal resistance junction-pcb max
Value
Unit
(1)
R
thj-pcb
50
°C/W
1. When
mounted on FR-4 board of 1 inch², 2 oz Cu, t < 10 sec
Table 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
I
AS
5
A
Single pulse avalanche energy
E
AS
125
mJ
(starting T
j
= 25 °C, I
D
= I
AS
, V
DD
= 140 V)
2/11
Doc ID 16083 Rev 2
STS5N15F4
Electrical characteristics
2
Electrical characteristics
(T =
25 °C unless otherwise specified)
J
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source breakdown
voltage
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0
150
V
V
DS
= 150
V
,
1
µA
µA
Zero gate voltage drain
current (V
GS
= 0)
I
DSS
V
DS
= 150
V
,
@
125 °C
10
Gate body leakage current
(V
DS
= 0)
I
GSS
V
GS
= 20
V
100
4
nA
V
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
2
Static drain-source on
resistance
R
DS(on)
V
GS
= 10
V
,
I
D
= 2.5 A
0.057 0.063
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Input capacitance
C
iss
C
oss
C
rss
2710
180
pF
pF
pF
Output capacitance
V
DS
=25
V
, f = 1
M
Hz,
V
GS
= 0
–
–
Reverse transfer
capacitance
69.5
Q
g
Q
gs
Q
gd
T
o
tal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 75
V
,
I
D
= 5 A
V
GS
=10 V
48
nC
nC
nC
–
–
10.8
13.7
–
–
f=1 MHz Gate DC Bias=0
T
e
st signal level=20 mV
open drain
R
g
Gate input resistance
1.9
Ω
Doc ID 16083 Rev 2
3/11
Electrical characteristics
STS5N15F4
Table 7.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ. Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on delay time
Rise time
13.5
5.1
ns
ns
ns
ns
V
DD
= 75
V
,
I
D
= 3 A,
R
G
=4.7
Ω
,
V
GS
=10 V
–
–
T
u
rn-off delay time
Fall time
39.7
11.4
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max Unit
I
SD
Source-drain current
–
–
–
5
A
A
V
(1)
I
SDM
Source-drain current (pulsed)
Forward on voltage
20
1.3
(2)
V
SD
I
SD
= 6 A, V
GS
= 0
I
SD
= 6 A,
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
85.2
277.6
8.2
ns
nC
A
di/dt = 100 A/µs,
V
R
= 120
V
,
T
J
= 150 °C
Q
rr
–
I
RRM
1. Pulse
width limited by safe operating area
2. Pulsed:
pulse duration=300µs, duty cycle 1.5%
4/11
Doc ID 16083 Rev 2
STS5N15F4
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM04995v1
I
D
(A)
Tj=150°C
Tc=25°C
100
S
inlge
p
u
l
s
e
10
1
10m
s
100m
s
0.1
1
s
0.01
10
V
D
S
(V)
0.1
1
100
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
AM049
8
6v1
AM049
8
7v1
I
D
(A)
I
D
(A)
V
G
S
=10V
70
60
50
40
3
0
20
70
V
D
S
=10V
60
6V
50
40
3
0
5V
20
10
10
0
4V
D
S
(V)
0
0
5
V
8
10
V
G
S
(V)
0
10
15
4
6
2
Figure 6.
Normalized B
vs temperature
Figure 7.
Static drain-source on resistance
VDSS
AM049
8
9v1
AM049
88
v1
R
D
S
(on)
(
Ω
)
BV
D
SS
(norm)
140
1.10
120
100
8
0
V
G
S
=10V
I
D
= 1 mA
1.05
1.00
60
40
0.95
0.90
20
0
0
2
3
4
1
5
-50
-25
0
25 50 75
T
125 150
J
(°C)
I
D
(A)
100
Doc ID 16083 Rev 2
5/11
Electrical characteristics
STS5N15F4
Figure 8.
Gate charge vs gate-source voltage
Figure 9.
Capacitance variations
AM04990v1
AM04991v1
(pF)
C
V
G
S
(V)
T =25°C
J
V
DD
=75V
=5A
2500
2000
2000
1500
12
f=1MHz
I
D
Ci
ss
10
8
6
1000
500
0
4
2
0
Cr
ss
Co
ss
100 120 140
V
D
S
(V)
20
40
0
60
50
Q
g
(nC)
8
0
0
10
3
0
20 40
Figure 10.
Normalized gate threshold voltage
Figure 11.
Normalized on resistance vs
vs temperature
temperature
AM04992v1
AM0499
3
v1
V
G
S
(th)
R
D
S
(on)
(norm)
(norm)
1.10
2.5
I
D
= 250
µ
A
V
G
S
= 10 V
I
D
= 2.5 A
1.00
0.90
0.
8
0
0.70
2.0
1.5
1.0
0.5
0
0.60
0.50
-50
-50
-25
-25
0
25 50 75
150 T
J
(°C)
0
25 50 75
T
J
(°C)
125 150
100
125
100
Figure 12.
Source-drain diode forward
characteristics
AM04994v1
V
S
D
(V)
T
J
=-55°C
0.9
0.
8
0.7
0.6
T
J
=25°C
T
J
=175°C
0.5
0.4
0
10
20
3
0
40
50 I
S
D
(A)
6/11
Doc ID 16083 Rev 2
STS5N15F4
Test circuits
3
Test circuits
Figure 13.
Switching times test circuit for
resistive load
Figure 14.
Gate charge test circuit
V
DD
12V
47k
Ω
1k
Ω
100nF
2200
3
.
3
µ
F
R
L
µ
F
I
G
=CON
S
T
V
DD
100
Ω
V
i
=20V=V
GMAX
D.U.
T
.
V
G
V
D
R
G
V
G
S
2200
µ
F
D.U.
T
.
2.7k
Ω
47k
Ω
P
W
1k
Ω
P
W
AM0146
8
v1
AM01469v1
Figure 15.
Test circuit for inductive load
switching and diode recovery times
Figure 16.
Unclamped inductive load test
circuit
L
A
A
A
B
D
FA
S
T
DIODE
L=100
µ
H
V
D
G
2200
µ
F
D.U.
T
.
B
3
.
3
µ
F
V
DD
S
3
.
3
µ
F
1000
µ
F
B
V
DD
25
Ω
I
D
D
G
R
G
S
V
i
D.U.
T
.
P
w
AM01470v1
AM01471v1
Figure 17.
Unclamped inductive waveform
Figure 18.
Switching time waveform
t
on
t
off
td
off
V
(BR)D
SS
t
r
t
f
td
on
V
D
90
%
10
%
90
%
I
DM
10
%
V
D
S
I
D
0
0
V
DD
V
DD
90
%
V
G
S
10
%
AM01472v1
AM0147
3
v1
Doc ID 16083 Rev 2
7/11
Package mechanical data
STS5N15F4
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
is an ST trademark.
8/11
Doc ID 16083 Rev 2
STS5N15F4
Package mechanical data
SO-8 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
TYP.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
1.27
3.81
e
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
Doc ID 16083 Rev 2
9/11
STS5N15F4
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Doc ID 16083 Rev 2
11/11
